Substrate processing apparatus that mechanically controls plasma density

Abstract

The present invention relates to a substrate processing apparatus that mechanically controls plasma density; the substrate processing apparatus comprises: a chamber in which a substrate is processed with plasma; an antenna coil that radiates high-frequency waves to the engineering gas supplied into the chamber to generate plasma; an interlocking part which is connected to the antenna coil and moves together with the antenna coil; a horizontal driving part that provides driving force to enable the interlocking part to move in the horizontal direction; and a drive control unit for controlling the drive of the horizontal driving part. The drive control unit adjusts the drive amount of the horizontal driving part so as to correspond to a movement direction and a movement distance from the current position of the antenna coil to the position to which the antenna coil should move, thereby controlling a formation position of plasma passing through the antenna coil.

Description

technical field [0001] The invention relates to a substrate processing device for controlling plasma density mechanically, in particular to a substrate processing device for controlling plasma density by adjusting the position of an antenna coil. Background technique [0002] The substrate processing apparatus is an apparatus for performing semiconductor processes, specifically, an apparatus for processing the substrate 10 with plasma P. [0003] At this time, the substrate 10 may be a wafer or a tray on which the wafer is mounted. [0004] In addition, the substrate processing apparatus may be an apparatus that uses plasma P to perform one or more of etching, vapor deposition, and ashing. [0005] In the substrate processing apparatus, the antenna coil radiates a high-frequency wave (High-frequency wave) to the process gas supplied into the chamber 100 to generate plasma P. [0006] At this time, the density of the generated plasma P affects the processing speed of the su...

AI Technical Summary

Problems solved by technology

[0011] However, there is a problem that the high-frequency waves are affected by many environmental factors during the supply from the high-frequency power supply unit 20 to the antenna coil 200. Therefore, the high-frequency waves radiated from the antenna coil 200 cannot be effectively controlled as expected, and as a result, the plasma cannot be effectively controlled. P density

[0012] In addition, there is a problem that, in order to control high-frequency power, a plurality of electrical / electronic components are added, which increases management items, thereby making the replacement cycle faster

[0018] There is the same problem as the antenna coil 200 problem described above: the high-frequency waves radiated from the inner antenna coil 210 and the outer antenna coil 220 cannot be effectively controlled as expected, and as a result, the plasma density cannot be effectively controlled.

[0019] In addition, there is a problem that in order to separately control the high-frequency power supplied to the inner antenna coil 210 and the outer antenna coil 220, a plurality of electric / electronic configurations including the first high-frequency power supply unit 21 and the second high-frequency power supply unit 22 are added, Allows for a further increase in managed items, resulting in faster replacement cycles

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