23 results about "Plasma Gases" patented technology

The present application relates to the technical field of high-temperature oxidation-resistant coating, and particularly relates to a modified NiCoCrAlYTa bonding layer and a preparation method thereof.The present application adopts low-pressure plasma gas spraying to prepare a NiCoCrAlYTa bonding layer on the surface of a high-temperature alloy substrate, then performs shot peening treatment to reduce the surface roughness of the coating, then performs Al-Cr co-diffusion, and forms a co-diffusion bonding layer with an outer Al-rich layer, an intermediate Cr-rich layer and an inner NiCoCrAlYTa layer, finally performs vacuum pre-oxidation to form a TGO layer on the surface of the co-diffusion bonding layer, thereby obtaining the modified NiCoCrAlYTa bonding layer.The modified NiCoCrAlYTa bonding layer prepared by the present application has excellent high-temperature oxidation resistance and corrosion resistance, and can realize long-time service.

The utility model relates to a lens plasma cleaning tray, include: tray, be equipped with a plurality of with array form distribution's convex on the upper surface of tray, the area of the region of distribution convex on tray is bigger than the area of single lens, and the gap between two adjacent convexes has and the size of center spacing is smaller than the size of single lens. Advantageous effect is: the tray can place a plurality of lenses in the region of distribution convex, and can guarantee that the lens is not inclined after placing, since the lens is supported by a plurality of convexes, compared with sticking to the tray, the other surfaces (five surfaces) of the lens and the downward surface can contact the plasma gas during plasma cleaning, and the corresponding bonding standard can be cleaned, so that the situation of confusing A and B surfaces will not occur, and the tray can use an automatic suction nozzle to suck the lens, which greatly improves the efficiency compared with manual use of tweezers.

This invention relates to a method for preparing electronic-grade hydrofluoric acid. The invention utilizes a microchannel reactor for the fluorine oxidation reaction, significantly reducing fluorine consumption and safety hazards during production. Furthermore, the microchannel reactor enhances the gas-liquid two-phase mass transfer during the oxidation reaction, further improving impurity removal and product quality. The addition of multi-effect distillation to the distillation process not only enables secondary heat utilization but also saves on the use of high-temperature heating media at the bottom of the column, effectively reducing energy consumption. In the modified liquid, DMF serves as the solvent, cobalt nitrate provides cobalt ions, and vinylguanidine provides guanidine functional groups and amino groups. Ammonia and propanethiol are used as plasma gases to introduce amino and thiol groups onto the membrane surface. These groups help improve membrane selectivity, effectively separating metal and non-metal ions, as well as acidic impurities in the raw materials.

This invention relates to a method and system for peeling off silicon carbide ingots, belonging to the field of crystal processing technology. The method includes the following steps: S1, using an ultrashort pulse laser to form a slightly split modified layer inside the silicon carbide ingot, creating modified layer channels within the ingot and forming slightly split regions between adjacent paths; S2, placing the silicon carbide ingot upright on a base with suction function, and using a focused nozzle to spray plasma gas from the modified layer channels at the edge of the ingot; S3, after the side of the silicon carbide ingot moves relative to the focused nozzle for several revolutions, a substrate and the target ingot with low surface damage are obtained. This invention forms a slightly split modified layer inside the silicon carbide ingot using an ultrashort pulse laser, and uses a focused nozzle to spray plasma gas under pressure to etch and separate the target ingot from the substrate, achieving low-damage ingot peeling. This method is characterized by low damage, simple process, and low cost.

This utility model discloses an ion generating device for a non-vacuum coating gun, including an ion generating gun. The ion generating gun comprises an ion gun head assembly, an ion gun body assembly, an ignition assembly, and an air inlet connector. The ignition assembly is connected to an external ignition power supply and is inserted into the ion gun body assembly, with a ventilation gap between them. The ignition assembly cooperates with the ion gun head assembly to generate ignition ionization. The air inlet connector is connected to the ion gun body assembly and is provided with an air inlet channel. The incoming air passes through the air inlet channel and the ventilation gap and is ionized into plasma gas at the ion gun head assembly. The ion generating device of this utility model has a reasonable structural design and compact size, making it easy to install and use. It has a better ionization effect, improves the contact reaction between the ionized plasma gas and the chemical solution, and further enhances the coating effect.

To provide a gas conversion device using plasma that exhibits excellent gas conversion efficiency. [Solution] The plasma gas conversion apparatus 1 according to the present invention comprises a reaction tube 7 that generates plasma inside, a gas supply tube 9 connected to the reaction tube 7 to supply reaction gas, a high conversion gas recovery tube 11 located downstream of the plasma generation region 16 in the reaction tube 7 to recover high conversion gas with a relatively high conversion rate other than the gas near the inner wall of the reaction tube 7, and a low conversion gas recovery tube 13 located downstream of the high conversion gas recovery tube 11 to recover low conversion gas with a relatively low conversion rate that was not recovered by the high conversion gas recovery tube 11, wherein the recovery port 11a of the high conversion gas recovery tube 11 is located between it and the inner wall of the reaction tube 7 with a gap extending around its entire circumference.

A method for removing carbon contamination from a silicon carbide chip includes: providing a substrate having opposing first and second surfaces; forming a device layer on the first surface of the substrate, the device layer having a source doped region; forming an interlayer dielectric layer on the source doped region; etching the interlayer dielectric layer to expose the surface of the source doped region, forming a contact hole; forming a first metal layer at the bottom of the contact hole; heat-treating the first metal layer and the source doped region to form a first ohmic contact layer and a first carbon contamination layer on the surface of the first ohmic contact layer; and performing a plasma gas cleaning operation to remove the first carbon contamination layer. Since the plasma gas cleaning operation is a dry removal method, specifically involving low-energy ion bombardment to remove the first carbon contamination layer, it can remove the first carbon contamination layer while avoiding damage to the first ohmic contact layer at the bottom of the first carbon contamination layer and the surface of the source doped region, thereby improving the electrical performance and reliability of the silicon carbide chip.

A plasma head is provided with a main body, which is tubular and supplied with a process gas at one end, an electrode which is contained in the main body, is energized and thereby discharged at least a portion of the process gas to generate a plasma gas, and a nozzle which has an inlet connected to the other end of the main body and into which the process gas or plasma gas flows, a tapered section whose inner diameter gradually decreases axially from the inlet, and an outlet positioned at the smaller diameter end of the tapered section which expels the plasma gas, wherein the orifice diameter of the outlet and the cone angle of the tapered section are fixed such that the plasma gas reaching a point a certain distance from the outlet has a predetermined temperature or higher.

The present invention relates to a method for providing a coating to the inner surface of a barrel of a small- or medium-caliber firearm, wherein the inner surface defines the internal volume, and the method provides a firearm including the barrel to be processed in a reaction chamber, and provides a cylindrical electrode having an outer surface and including a target material substantially coaxially within the barrel, closes the reaction chamber, reduces the pressure to a predetermined pressure value, supplies gas to the reaction chamber, thereby supplying gas into the internal volume, and raises the pressure within the reaction chamber to an operating pressure, using the electrode as a target cathode and the barrel as an anode. The process includes the steps of: applying a first electric field to the electrode to activate the gas into a plasma gas; using the plasma gas to remove the target material and deposit it on the inner surface; turning off the first electric field; stopping the gas supply; returning the reaction chamber to atmospheric pressure; and removing the firearm, including the processed barrel, from the reaction chamber, wherein the distance between the outer surface of the electrode and the inner surface of the barrel is at least 0.5 mm, the electric field is applied for a time long enough to form a layer of the target material on the inner surface of the barrel, and the product of the operating pressure and the distance between the electrode and the inner surface is 10 -5 This concerns the method of Torr.cm ~ 45 Torr.cm.

The application discloses a kind of plasma smoke generating device and method, generating device includes: plasma generating module, for generating plasma gas;Smoke generating module, for heating smoke generating agent to generate smoke;Water mist supply module, for the micron-sized mist drop formed after water ultrasonic atomization respectively sent to smoke generating module and plasma generating module;High-voltage energizing module, for making the micron-sized mist drop in smoke generating module and the micron-sized mist drop in plasma generating module charge opposite electric nature, and then make the electric nature of smoke and plasma gas opposite;Emission module, for the smoke and plasma gas of proportion after mixing are ejected plasma smoke.The application makes that plasma can be closely combined with smoke, weaken plasma component decomposition speed;While being able to control the final jet distance, shielding intensity and coverage area of plasma smoke, shorten smoke arrangement time, improve signal weakening efficiency.

The present invention provides a thin film deposition apparatus comprising: a processing cavity for depositing thin films; a gas supply assembly provided on the top wall of the processing cavity for supplying process gas into the processing cavity; a heating tray provided below the gas supply assembly for supporting and heating the substrate; an upper electrode and a lower electrode for forming a uniform electric field within the processing cavity; and a radio frequency source connected to the upper electrode and the lower electrode for supplying radio frequency power, exciting the process gas inside the processing cavity to dissociate it into plasma gas, and allowing the plasma gas to deposit a thin film on the substrate. The upper electrode and the lower electrode are the same size or have a difference of ±10 mm, and the diameter of the lower electrode is smaller than that of the substrate, so that a uniform electric field is generated between the upper electrode and the lower electrode. The present invention can guarantee a uniform distribution of the electric field within the process cavity, resulting in good uniformity of the deposited thin film, and can particularly guarantee uniformity of the thin film even in continuous stacking of 300 layers or more to 1000 layers or more.

The invention relates to a method for applying a watchmaking oleophobic and hydrophobic non-halogenated epilame coating that is resistant to timepiece cleaning, to at least part of a surface of a substrate, using atmospheric-pressure cold-plasma coating, the method comprising: activating a first carrier gas using a first electrical discharge, thus creating a first plasma gas jet having an overall temperature equal to or lower than 200°C; introducing an anchoring compound into said first plasma gas jet, thereby activating the anchoring compound; bringing said surface into contact with said first plasma gas jet comprising said activated anchoring compound, thereby causing the anchoring compound to adhere to said surface; activating a second carrier gas using a second electrical discharge, thereby creating a second plasma gas jet having an overall temperature equal to or lower than 200°C; introducing an epilame-coating compound into said second plasma gas jet, thereby activating the epilame-coating compound; and bringing said surface to which the anchoring compound is adhered into contact with said second plasma gas jet comprising said activated epilame-coating compound, thereby causing the epilame-coating compound to adhere to said anchoring compound and thereby forming on said surface a non-halogenated oleophobic and hydrophobic epilame coating resistant to timepiece cleaning; wherein the anchoring compound is in the form Si(OR)xR''y(R'NH2)4-x-y, where R and R'', which may be identical or different, are H, a C1-C10 alkyl group, or a C2-C10 alkenyl group, R', which may be identical or different, is H, a C1-C10 alkyl group optionally comprising an amine group, or a C2-C10 alkenyl group optionally comprising an amine group, x is 1, 2 or 3, y is 0 or 1 where x+y is 0, 1, 2 or 3; and the epilame-coating compound is according to formula (II) or according to formula (III): (II), where R1, R2, R3, R4, R5, R6, R7 and R8, which may be identical or different, are H, a C1-C10 alkyl group or a C2-C10 alkenyl group, and n is comprised between 0 and 10, in which at least one of R1, R2 or R3 is a C1-C10 alkyl group, or a C2-C10 alkenyl group, preferably methyl or ethyl, and at least one of R4, R5 or R6 is a C1-C10 alkyl group, or a C2-C10 alkenyl group, preferably methyl or ethyl; or (III), where R9, R10, R11, R12, R13 and R14, which may be identical or different, are H, a C1- C10 alkyl group, or a C2-C10 alkenyl group, m is comprised between 1 and 10, in which at least one of R9, R10, R11, R12, R13 and R14 is a C1-C10 alkyl group or a C2-C10 alkenyl group.

A method for preparing high-purity nano-tin oxide powder using radio frequency inductively coupled plasma (RFIC) involves placing tin powder with a purity of at least 99.99% and a particle size of 35-40 µm into an intermittent feeder. Plasma gas is introduced into the furnace chamber, and the RF power supply is turned on. Energy is coupled through an RF induction coil to generate an RFIC plasma arc. The tin powder is then transported to the high-temperature zone at the center of the RFIC plasma arc via a carrier gas, allowing it to completely vaporize without solid electrode contact, generating tin vapor. Oxygen is then introduced into the tin vapor zone, causing an oxidation reaction that produces tin oxide vapor. The resulting tin oxide vapor is rapidly cooled, condensing into nano-sized tin oxide particles with a purity of 99.99%. The resulting nano-tin oxide powder exhibits high purity, uniform particle size, and good dispersibility.

A system (300) for plasma enhanced chemical vapor deposition, PECVD, comprising a plasma source (100, 200). The plasma source comprises at least a first hollow electrode (110a, 110b, 110c), the first hollow electrode (110a, 110b, 110c) being arranged to generate a hollow electrode plasma (111). The plasma source also 5 comprises a first supply means (112a, 112b, 112c) arranged to supply a plasma gas to the first hollow electrode (110a, 110b, 110c), a second supply means (141a, 141b) arranged to supply a precursor gas, a source biasing means (150) connected to the first hollow electrode (110a, 110b, 110c), and a target biasing means (130) arranged to be connectable to a conductive platform (120).

The utility model discloses a kind of test fixture plasma dust removal mechanism, including base, the top of the base is provided with clamp, the inner side of the base top close to clamp is provided with carrier plate, the both sides of the clamp are equipped with rotary plate, two groups The rotary plate side close to each other is commonly provided with rotating handle, the both sides of the clamp inner side are provided with telescopic link, one end of the clamp inner side is provided with plasma generator, the side of the plasma generator is provided with plasma wind stick;The utility model passes through the intercoordination between plasma generator, plasma wind stick, air outlet, collection box, spring buckle and through-hole, so that when testing PCB board, plasma gas can be blown to PCB board, electrostatic dust removal is carried out to PCB board, not only product quality and safety can be improved, but also work environment can be optimized, damage to precision instruments and equipment can be reduced, and enterprise operating cost is reduced.

The application discloses a two-dimensional Ga2S3 material and a preparation method and application thereof, and the preparation method comprises the following steps: performing sulfurization treatment on two-dimensional Ga2O3 in a plasma gas flow atmosphere to obtain the two-dimensional Ga2S3 material. The application provides a method for preparing two-dimensional Ga2S3, and wafer-level super-large-size two-dimensional Ga2S3 can be prepared by taking two-dimensional Ga2O3 prepared by magnetron sputtering as a template. Furthermore, the thickness of the two-dimensional Ga2S3 can be controlled by controlling the sputtering time, and the purity of the two-dimensional Ga2S3 can be improved by the plasma-enhanced sulfurization method, so that the controllable preparation of the two-dimensional Ga2S3 is finally realized.

The application discloses a control method of casting cleaning intelligent equipment based on a robot, which comprises the following steps: automatically loading and clamping a casting, self-inspecting and starting a program, visually recognizing and planning a path, performing a plasma gas planing cutting process, performing a visual recognition verification process, performing a round corner cleaning process and performing a polishing process. A 3D visual camera, a plasma gas planer, a telescopic file and a strong grinder are respectively grabbed by a quick-change disc to realize visual measurement, gas planing cutting, round corner cleaning and polishing processes, so that the integrated degree is high, the robot is used to replace manual work to clean and polish the casting, the harm to the body of a worker in the cleaning process is reduced, and the requirements of intelligence, safety and reliability of the casting cleaning are met.

The application provides application of plasma-activated water in resistant bacteria and resistant genes, a working gas is introduced into a plasma jet device to react to obtain a plasma gas, the plasma gas is introduced into a water body to activate to obtain the plasma-activated water. The plasma-activated water can effectively remove the resistant bacteria, can effectively degrade the resistant genes in the resistant bacteria, and can effectively reduce the transformation of the resistant genes on plasmids; the degradation of the plasma-activated water to the resistant genes is non-specific.

A method for piercing and cutting a workpiece that includes the use of a plasma torch having an electrode and a nozzle spaced from and surrounding a distal end portion of the electrode to form a process gas flow channel. A method includes delivering a plasma gas at a first pressure through the process gas flow channel of the torch while ionizing the plasma gas to produce a plasma arc. While the plasma gas is delivered at the first pressure, performing a piercing operation by producing a pierce hole in the workpiece using the plasma arc. Subsequent to the piercing operation, performing a cutting operation by delivering through the process gas flow channel the plasma gas at a second pressure lower than the first pressure, forming a cut in the workpiece that originates at and extends away from a boundary of the pierce hole.

The application discloses a metal purification device and a method and application thereof, and the method comprises the following steps: S1. performing a chemical vapor deposition reaction on a crude metal and a halogen gas to generate a metal halide; S2. decomposing the metal halide in a deposition chamber or depositing the metal by using a hydrogen reduction method; S3. high-temperature smelting the deposited metal under a plasma gas condition; and S4. discharging by using high-temperature low-pressure heat treatment to obtain a purified metal. The method combines a chemical vapor deposition method and a plasma smelting technology, is simple, does not need multiple purifications, and remarkably improves the defects of great difficulty in metal purification and complex process, and promotes the industrial progress of metal purification.

This invention discloses an electrostatic elimination process for high-vacuum equipment, relating to the semiconductor manufacturing field. Step 1 involves adsorption of a semiconductor substrate. Step 2 involves flexible substrate holding. During negative pressure suction, the negative pressure pulls the three tarpaulins of the pressing assembly downwards, causing flexible deformation. This causes the movable plates on both sides to move downwards and compress the springs. The sealing folding plate adapts to deformation to maintain the chamber seal. The movable plates move the L-shaped pressure plate towards the upper surface of the placement platform, achieving flexible holding of the substrate through anti-static insulating pads. Step 3 involves electrostatic elimination of the substrate. An external ion source is activated, and the plasma gas generated by the ion source is delivered to the blowing pipe through a hose and blown onto the substrate surface through a nozzle. This invention enables the negative pressure generated during adsorption to automatically pull the tarpaulins downwards, causing the anti-static insulating pads to flexibly hold the substrate edges, evenly dispersing the holding force and avoiding physical damage to the substrate caused by localized stress concentration.

The application discloses a kind of green recovery and regeneration method of waste battery electrode material, belong to waste battery processing technical field, it includes the micro area ultrasonic scanning data of obtaining waste electrode sheet, laser-induced breakdown spectroscopy data and electrochemical impedance spectroscopy data and carries out feature fusion, generates dynamic activation indicator mapping and generates multi-field coupling driving sequence, act on waste electrode sheet under preset condition carries out multi-field coupling stripping, with ionic liquid is mixed and is handled and is applied pulsating flow field and is strengthened and is separated, output pure active material cluster is placed in plasma gas and carries out in situ crystallization repair, generates regenerated electrode material and carries out bonding and aqueous conductive agent compounding, form re-electrode polarization layer body, and carry out cycle and rate response test, obtain reutilization performance evaluation atlas. Through multi-dimensional perception guided multi-field coupling intelligent stripping and plasma in situ repair, waste electrode active material can be realized to lossless efficient recovery and high-performance regeneration.

This invention provides a system and method for testing the electrothermal conversion efficiency of a star-shaped three-phase AC arc heater. A power output measurement unit measures the voltage and current at the output terminals of the three-phase AC power supply and calculates the power output power P1. A heater power measurement unit measures the voltage and current of each phase of the arc in the three-phase AC arc heater and calculates the heater power P2. A gas medium measurement unit and a heater body testing unit measure the energy P3 output by the working plasma gas in the heater. The thermal efficiency η1 and the electrothermal conversion system efficiency η2 of the star-shaped three-phase AC arc heater can be calculated. This invention enables online real-time monitoring of the entire system's electrical energy conversion efficiency and the heater's thermal efficiency during operation. It also allows analysis of energy losses in various parts of the arc heater and reactive power losses in the entire electrothermal system, providing guidance for heater operation optimization and performance improvement.