247 results about "Plasma Gases" patented technology

The invention belongs to the technical field of flow field optical measurement, and particularly relates to a high-enthalpy plasma gas temperature measurement method, system and device based on an absorption spectrum. Generating a composite modulation signal through a high-frequency sine wave and a low-frequency sawtooth wave, and enabling incident light to pass through a flow field measurement area in parallel through laser modulation and beam shaping; the detector receives the transmission light and converts the transmission light into an electric signal containing harmonic information, the signal acquisition device is used for performing signal acquisition, the phase-locked demodulation algorithm is used for extracting second harmonic, and the temperature is inversely deduced by combining the double-spectral-line temperature measurement method and the Fourier coefficient amplitude ratio of the second harmonic with the HITRAN database. The system comprises a signal driving module, a laser emission module, a detection acquisition module and a temperature measurement module. The device is composed of a signal generator, an in-phase adder and the like, and a laser is matched with a driving power supply to guarantee stable work. According to the scheme, aiming at the problems of weak signal absorption and insufficient signal-to-noise ratio under complex working conditions, the measurement accuracy and reliability are improved by composite modulation, harmonic extraction and a bispectral line algorithm, and an effective means is provided for research on thermal characteristics of the high-enthalpy plasma.

The invention provides a method for improving the interface bonding performance of a carbon fiber reinforced epoxy resin-based composite material, and belongs to the technical field of carbon fiber surface modification. The preparation method of the modified carbon fiber comprises the following steps: carrying out plasma treatment on carbon fiber by using air as a plasma gas medium to obtain plasma surface modified carbon fiber; the plasma surface modified carbon fiber is soaked in a polyamide-amine dendrimer (PAMAM) solution for a reaction, and the modified carbon fiber is obtained. The modified carbon fiber is prepared through a method of combining plasma treatment and surface grafting treatment, so that the interface bonding strength of the carbon fiber reinforced epoxy resin-based composite material is improved, and meanwhile, the original tensile property of the carbon fiber can be kept stable.

The utility model discloses a wide-width atmosphere gun plasma device, which belongs to the technical field of plasma, and comprises a protective shell, a plasma gas outlet, a gas inlet, a gas outlet, a gas inlet, a gas outlet, a gas outlet, a gas outlet, a gas inlet and a gas outlet, and is characterized in that the protective shell is provided with an accommodating cavity extending along the length direction and a plasma gas outlet communicated with the accommodating cavity; the ceramic insulation tube is arranged in the containing cavity, an airflow channel is formed between the ceramic insulation tube and the containing cavity, the ceramic insulation tube is provided with a containing cavity, and the two ends of the containing cavity are communicated with the airflow channel; the electrode is arranged in the accommodating cavity and is used for generating plasma gas; the gas inlet connecting block is connected with the protective shell and comprises a first gas inlet and a first gas outlet which are communicated with each other, the first gas inlet is used for feeding process gas, and the first gas outlet is communicated with the gas flow channel. Compared with the prior art, the wide atmosphere gun plasma equipment is high in stability, and can cool the equipment and plasma gas.

The utility model provides a plasma cleaning device, and belongs to the technical field of semiconductor production equipment, the plasma cleaning device comprises a cavity, and a chamber is arranged in the cavity; the cover plate covers the upper end of the cavity; the remote plasma source is connected to the central position of the protruding part; the gas blocking part is arranged in the conical cavity; the first gas homogenizing plate is arranged below the gas blocking part; the second gas uniformizing plate is arranged below the first gas uniformizing plate; and a substrate table. The cover plate and the gas blocking part can uniformly disperse plasma gas fed by a remote plasma source into the cavity, then the plasma gas is further homogenized through the first gas homogenizing plate to ensure the gas uniformity of a substrate area, and meanwhile, the vacuum mechanism is generally connected to the bottom of the cavity, so that the gas is downwards pumped through the second gas homogenizing plate during gas pumping, and the gas uniformity of the substrate area is ensured. The gas uniformity in the chamber can be effectively ensured, so that the etching uniformity and the etching rate are improved.

The purpose of the present invention is to provide: an etching method exhibiting an excellent etching rate with respect to silicon; a method for manufacturing a semiconductor device; an etching apparatus; and an etching gas composition. The present invention pertains to an etching method for etching silicon by using a plasma gas obtained by converting an etching gas composition containing fluorine gas into plasma.

Apparatus and process for the continuous production of carbon black or carbon containing compounds. The process is performed by converting a carbon containing feedstock, including generating a plasma gas with electrical energy, accelerating the plasma gas through a nozzle, whose diameter is narrowing in the direction of the plasma gas, guiding the plasma gas into a reaction area where feedstock is injected under conditions generated by aerodynamic and electromagnetic forces, including intense rapid mixing between the plasma gas and feedstock occurs. There is no significant recirculation of feedstock into the plasma chamber, and the reaction zone does not immediately come into contact with any contact surfaces. The products of reaction are cooled, and the carbon black or carbon containing compounds are separated from the other reaction products.

A semiconductor wafer processing apparatus is provided. The apparatus includes: a processing chamber having an internal space formed therein; a lower electrode configured to support a semiconductor wafer within the processing chamber; and an upper electrode facing the lower electrode. The upper electrode includes a shower head configured to supply plasma gas. A lower surface of the shower head has circular symmetry and: extends horizontally from a diametric center portion of the semiconductor wafer to a first point P1 in a radially outward direction, extends obliquely from the first point P1 to a second point P2 away from the semiconductor wafer in the radially outward direction, and extends horizontally from the second point P2 to a third point P3 in the radially outward direction.

The invention relates to the technical field of cables, and provides a high-strength corrosion-resistant flexible cable which sequentially comprises a sheath layer, an insulating layer and a conductor from outside to inside, the sheath layer comprises the following components in parts by weight: 90 parts of composite polyvinyl chloride, 10-15 parts of high-density polyethylene, 6-12 parts of ethylene propylene diene monomer, 3-6 parts of ethylene-methyl methacrylate copolymer, 10-20 parts of filler, 1-2 parts of antioxidant, 2-4 parts of plasticizer, 15-18 parts of flame retardant and 0.5-0.7 part of vulcanizing agent; the preparation method of the composite polyvinyl chloride comprises the following steps: putting polyvinyl chloride into a plasma treatment device, vacuumizing, introducing a plasma gas source, and carrying out etching treatment to obtain the composite polyvinyl chloride, the plasma gas source comprises hexafluoroacetone and methylsilane in a volume ratio of (3-9): 1. According to the technical scheme, the problem of poor corrosion resistance of the cable sheath layer in the prior art is solved.

A plasma torch system includes a regulator configured to direct a first portion of the gas flow from a gas source toward a consumable of a plasma torch, the regulator being configured to regulate a pressure of the first portion of the gas flow directed toward the consumable based on a pressure in a pilot chamber. The plasma torch system also includes a valve fluidly coupled to the pilot chamber and configured to direct a second portion of the gas flow from the gas source toward the pilot chamber. The valve, in the first position, is configured to increase the pressure in the pilot chamber at a first ramp rate, and the valve, in the second position, is configured to decrease the pressure in the pilot chamber at a second ramp rate.

The invention relates to the field of activated carbon modification, in particular to high-hydrophobicity activated carbon and a preparation method thereof. According to the technical scheme, the method comprises the following steps: grinding a biomass material, adding a solution containing aluminum salt and / or magnesium salt, carrying out hydrothermal reaction to obtain a hydrothermal precursor, drying, carbonizing under the protection of inert gas to obtain a carbonized precursor, activating to obtain an activated precursor, and finally cleaning and drying to obtain the high-hydrophobicity activated carbon. Wherein in the activation step, water vapor is firstly introduced to carry out an activation reaction on the carbonized precursor, then plasma gas is circularly introduced to further react to obtain an activated precursor, and the plasma gas is acetylene and fluorinated benzene mixed plasma gas. The process is simple, complex equipment is not needed, the whole preparation process is short in period, low in cost and easy to industrialize, and the prepared activated carbon is high in hydrophobicity, good in oil absorbency and large in specific surface area.

The invention relates to the technical field of plasma, in particular to a plasma cleaning device capable of being spliced. The plasma generator comprises a main cavity, side plates, an electrode assembly and a high-voltage electric connector, the side plates are connected to the two sides of the main cavity in a sealed mode, the main cavity is formed by splicing a plurality of cavity modules, each cavity module is provided with a discharge area, an exhaust area, a plasma air outlet, an exhaust inlet and a splicing installation position, the discharge areas of the multiple cavity modules are communicated, and the exhaust areas of the multiple cavity modules are communicated with the splicing installation position. The exhaust areas of the plurality of cavity modules are communicated, the discharge areas are isolated from the exhaust areas, the plasma gas outlets are communicated with the discharge areas, the exhaust inlets are communicated with the exhaust areas, an electrode assembly is installed in the discharge area of each cavity module, and the high-voltage electric connectors are connected with the electrode assemblies. And the side plates and the cavity modules are positioned, butted and fixed through the splicing mounting positions. The cleaning heads with different lengths are composed of a modular product and can be spliced and customized according to customer requirements, and the overall transformation cost and the manufacturing cost can be reduced.

The present invention relates to the technical field of plasma spraying, and specifically relates to a plasma spraying device with an anti-blocking structure, which includes a spraying device main body and a spraying nozzle. The spraying nozzle includes a nozzle main body, a cathode electrode, a primary feeding seat, a rotating feeding seat, a feeding nozzle, and an anode electrode. An installation cavity and an air supply cavity are provided on the nozzle main body. An air intake channel is provided at the edge of the installation cavity, and the air intake channel is connected to a plasma gas supply device through an air supply pipeline. The cathode electrode is installed in the installation cavity and is connected to the negative pole of the power supply. The primary feeding seat is arranged in a ring shape; by setting the spraying nozzle on the plasma spraying device to be composed of a nozzle main body, a cathode electrode, a primary feeding seat, a rotating feeding seat, a feeding nozzle, and an anode electrode, and rotatably installing the rotating feeding seat on the nozzle main body, the feeding nozzle can perform rotating feeding, so that the nozzle main body can spray more evenly.

The purpose of the present invention is to provide: an etching method with which anisotropic etching of silicon is possible even if a gas having a low GWP is used; a method for manufacturing a semiconductor device; and an etching apparatus. The present invention relates to an etching method for etching silicon at 40°C or lower with use of a plasma gas that is obtained by converting, into plasma, an etching gas composition that contains at least one gas selected from the group consisting of fluorine-containing interhalogens, F2, Cl2, Br2, and I2.　

The invention provides an array substrate, a preparation method thereof and a display device, belongs to the technical field of display, and can solve the problem that fan-out wiring of the array substrate is prone to poor corrosion and poor scratch. The preparation method of the array substrate comprises the following steps: exposing a part, corresponding to a display area and a part, corresponding to a fan-out area, of an organic film layer by using a mask plate to respectively form a first opening and a first groove; the transmittance of the mask plate corresponding to the first opening part is different from the transmittance of the mask plate corresponding to the first groove part; performing ashing treatment on the part, corresponding to the first opening, of the first passivation layer and the part, corresponding to the first groove, of the organic film layer by using first plasma gas so as to remove the first passivation layer and reduce the thickness of the organic film layer; performing ashing treatment on the part, corresponding to the first groove, of the organic film layer by using second plasma gas so as to remove the organic film layer and form a second opening; and forming a second passivation layer on one side, deviating from the substrate, of the organic film layer.

The present application relates to a diamond substrate, a diamond load and a preparation method thereof. The preparation method of the diamond substrate comprises: providing a diamond sheet having a first surface and a second surface opposite to each other; using a laser cutting method to open a through groove on the diamond sheet to obtain a grooved substrate, wherein a first at least partial area of ​​the surface of the grooved substrate is covered with carbon attachments; placing the grooved substrate in a hydrogen plasma device to expose a second at least partial area of ​​the grooved substrate to hydrogen plasma gas, wherein the second at least partial area completely overlaps or partially overlaps with the first at least partial area; providing hydrogen plasma gas to the grooved substrate to cause the hydrogen plasma gas to etch the second at least partial area to remove the carbon attachments in the second at least partial area to obtain a diamond substrate; the present application has a simple process, is efficient and quick, and can effectively improve the adhesion of the film layer on the side of the diamond through groove and improve the stability of the back-end product.

The present application relates to the technical field of high-temperature oxidation-resistant coating, and particularly relates to a modified NiCoCrAlYTa bonding layer and a preparation method thereof.The present application adopts low-pressure plasma gas spraying to prepare a NiCoCrAlYTa bonding layer on the surface of a high-temperature alloy substrate, then performs shot peening treatment to reduce the surface roughness of the coating, then performs Al-Cr co-diffusion, and forms a co-diffusion bonding layer with an outer Al-rich layer, an intermediate Cr-rich layer and an inner NiCoCrAlYTa layer, finally performs vacuum pre-oxidation to form a TGO layer on the surface of the co-diffusion bonding layer, thereby obtaining the modified NiCoCrAlYTa bonding layer.The modified NiCoCrAlYTa bonding layer prepared by the present application has excellent high-temperature oxidation resistance and corrosion resistance, and can realize long-time service.

The invention relates to a low-temperature low-loss silicon-based organic light-emitting diode vacuum magnetron sputtering device and method, and belongs to the technical field of vacuum coating equipment. The vacuum magnetron sputtering device comprises three cathodes which are sequentially connected, a low-damage sputtering cavity is formed among the three cathodes, and each cathode comprises a cathode baffle, a target material and a magnetic pole; the vacuum magnetron sputtering device further comprises a mask plate and a wafer clamp. Wherein the mask plates are arranged at the front end of the wafer, the shape and size of the mask plates are matched with those of the electronic elements, and the number of the mask plates is in one-to-one correspondence with those of the electronic elements. The three-face targeting technology is adopted, the sputtering deposition rate is controlled by adjusting the cathode target material power and the plasma gas flux, the targeting distance is adjusted and controlled, direct bombardment on the electronic element is avoided, and therefore surface damage of the electronic element is reduced to the maximum extent; meanwhile, a cooling system behind the wafer can reduce the temperature of the wafer in the sputtering process; therefore, the low-temperature low-loss vacuum sputtering deposition process of the silicon-based organic light-emitting diode wafer is realized.

The invention relates to a method of directly bonding (200) a first microelectronic device (100) on a second microelectronic device, comprising: providing a first device having a first flat surface (110) and a second device having a second flat surface (210), at least the first and second surfaces are treated with a plasma gas comprising at least a first fluorine-containing gas (having an atomic percentage F of fluorine), the first and second devices are transferred to a bonding apparatus, the first and second surfaces are immersed in a bonding atmosphere (1), and the first and second surfaces are bonded under the bonding atmosphere. By cooperatively controlling the atomic percentage F of fluorine and the relative humidity RH, the bonding speed Vc is less than or equal to 15 mm / s, more particularly less than 10 mm / s. The reduced bonding speed significantly reduces the deformation in the bonding process, and can obtain sufficiently high bonding energy, thereby ensuring good bonding between the two surfaces.

The present invention belongs to the technical field of atomic layer deposition, and relates to a plasma atomic layer deposition device, comprising: a reaction gas input component for inputting reaction gas; a reaction reagent input component for inputting reaction reagent; a plasma gas generating component for generating plasma gas using the reaction gas; the plasma gas generating component is connected to the reaction gas input component; a reaction component for providing a reaction space; the reaction component is respectively connected to the reaction reagent input component and the plasma gas generating component; an extraction component for extracting impurities in the reaction component; the extraction component is connected to the reaction component. The present application can perform thin film deposition at a lower temperature, can avoid the influence of high temperature on substrate performance, can prevent substrate deformation or performance degradation, the generated thin film has better uniformity, density and lower impurity content, reduces defects in the thin film, and thus improves the quality and performance of the thin film.

The application discloses a plasma gas heating furnace, and relates to the technical field of heating furnaces.The heating furnace is of an inner-outer sleeve structure, and comprises a furnace body inner sleeve, which is a plasma gas passage and is provided with a gas outlet; a furnace body outer sleeve, which is a working gas passage and is sleeved on the outer side of the furnace body inner sleeve and is in communication with the furnace body inner sleeve; and an arc plasma torch, which is arranged at the end of the furnace body inner sleeve far from the gas outlet; and an air inlet assembly, which is arranged in communication with the furnace body outer sleeve and is used for feeding working gas into the furnace body outer sleeve. The arc plasma torch is used for spraying high-temperature plasma jet into the furnace body, and the working gas fed from the air inlet assembly is mixed with the high-temperature plasma jet to form target gas, so that high-temperature inert gas heated by electric energy is used to replace high-temperature flue gas generated by combustion of fossil fuel, a heat source is provided for an industrial furnace, and nearly zero carbon dioxide emission is realized in the whole heating process.

The invention discloses a consumable electrode plasma multifunctional welding gun, a welding system and a welding method, and belongs to the technical field of advanced welding and additive manufacturing. The welding gun is of a coaxial multi-layer integrated structure and is sequentially provided with a welding wire channel, a shielding gas channel, a water-cooling inner plasma contact tube, a hollow tungsten electrode, a plasma gas channel, a water-cooling outer plasma contact tube of an integrated powder feeding channel and an outer shielding gas channel from inside to outside. Coaxial conveying of shielding gas, plasma gas, metal wires and metal powder is achieved, and highly-compressed composite electric arcs can be generated. By adjusting the polarity of the power source, the material conveying mode and the technological parameters, the multiple functions of large-fusion-depth welding, efficient cladding, wire or wire powder collaborative additive manufacturing and high-precision repairing can be achieved through one gun, the problems that in the prior art, the function is single, efficiency is insufficient or cost is high are solved, and the advantages of being high in integration degree, powerful in function and flexible in application are achieved.

A method (300) for initiating a plasma arc in a plasma cutting system, the method comprising: the provision (302) of a plasma gas supply guide line extending between a power supply and a plasma arc cutting torch, wherein the guide line comprises a first section proximal to the power supply and a second section proximal to the torch and an in-line valve within the guide line between the first section and the second section; the selective closing of the in-line valve by a controller to trap a static volume of gas in the first section (304); the production (306) of a wasteable volume of gas in the second section, and the initiation (308) of the plasma arc when a pressure of the dropable volume reaches a pressure value within a specified range.

The utility model discloses a cooling structure on non - vacuum coating gun traditional chinese medicine liquid reaction device, including liquid medicine reaction spraying device, and liquid medicine reaction spraying device includes spray gun main part, shunt core subassembly, spray gun head subassembly, rear positioning subassembly, and each subassembly is installed in spray gun main part and forms the mixed channel for the plasma gas to pass, and the shunt core subassembly includes the shunt main core, the shunt tail core, a plurality of shunt auxiliary core, and the rear cooling cavity is formed between a plurality of shunt auxiliary core and spray gun main part, and the front cooling cavity is formed between the shunt main core and spray gun main part, is provided with cooling inlet connection mouth, cooling outlet connection mouth respectively on spray gun main part. The utility model can carry out the circulating heat dissipation to the high temperature plasma gas of mixed channel in whole device, and after cooling, plasma gas and liquid medicine fully atomized reaction are carried out, avoid the influence of high temperature reaction to the coating quality, improve the service life of device.

The present invention belongs to the field of semiconductors, and in particular to a hafnium oxide film and its preparation method and application. The preparation method of the hafnium oxide film comprises the following steps: hafnium tetrachloride and cyclopentadiene are subjected to coordination reaction under the conditions of an organic solvent and an auxiliary agent, and then cyclopentadiene hafnium trichloride is obtained by seed induced crystallization method; dimethylamine is added for substitution reaction, and then cyclopentadiene tris (dimethylamino) hafnium is obtained by vacuum distillation crystallization; cyclopentadiene tris (dimethylamino) hafnium is introduced into the reaction chamber of PE-MOCVD equipment, and metal organic chemical vapor deposition is carried out with plasma gas at a deposition temperature, so that cyclopentadiene tris (dimethylamino) hafnium precursor generates hafnium oxide film on the substrate surface; the auxiliary agent is a strong base weak acid salt. The preparation method provided by the present invention can obtain a hafnium oxide film with high purity, high yield and high dielectric constant.

The application provides a double sandwich cup type dielectric barrier discharge fuel plasma gasification research device, three quartz cups with different sizes are nested and combined, a double layer cavity is formed at the bottom of the quartz cup, air in the upper layer cavity is extracted to form a vacuum layer, heat transfer in the heating area to the dielectric layer and the sealing area of the upper quartz cup is blocked, the quartz dielectric is prevented from being broken down under high temperature conditions, and air leakage caused by melting of the sealing structure under high temperature conditions is avoided. The lower layer cavity is used for placing a solid sample to carry out high temperature plasma reaction, reaction kinetics is obtained by detecting tail gas of the reaction, the thickness of the reaction cavity is controlled through the sealing pad, and the dead volume of the reaction is reduced. The circular protrusion in the grounding heating block binds the electric arc generated by the discharge electrode, and the discharge phenomenon at the edge of the discharge electrode is avoided. The integrated design reduces the complexity of installation of the experimental instrument, is easy to operate, and realizes the research on the plasma gas-solid reaction mechanism under the dielectric barrier discharge under high temperature conditions.

The present invention provides a plasma device and a method for installing a power cable that can more firmly fix a cable to a plasma head. The plasma device comprises: a plasma head that supplies power to an electrode to generate plasma gas; a head moving device that moves the plasma head; a power cable, the front end of which is connected to the electrode and the base end of which is connected to a power supply unit, and the power cable supplies power to the electrode from the power supply unit; a first limiting component installed on the plasma head to limit the relative movement of the power cable and the like relative to the plasma head; and a second limiting component that is arranged at the front end side of the power cable compared to the position of the first limiting component, installed on the plasma head to limit the relative movement of the power cable relative to the plasma head.

The application provides a micro-channel gas-liquid two-phase discharge nitrogen fixation device, which comprises a gas supply system and a liquid supply system, further comprises a micro-fluid chip and a dielectric barrier discharge system, the micro-fluid chip comprises a planar substrate and a transverse channel and a longitudinal channel which are arranged in communication along the planar substrate and are connected with the gas supply system and the liquid supply system respectively, wherein the gas-liquid two-phase forms a two-phase region in the longitudinal channel, and the dielectric barrier discharge system comprises a positive electrode and a negative electrode which are superimposed on the micro-fluid chip along the two-phase region to form an electric field. The micro-channel discharge of the application greatly improves the DBD discharge energy density and promotes the nitrogen dissociation; the micro-channel generates a stable gas-liquid two-phase flow pattern, strengthens the interface reaction and mass transfer between the plasma gas bubble group and the liquid phase, promotes the reaction equilibrium to move to the nitrogen fixation direction, so as to realize the improvement of the plasma nitrogen fixation energy efficiency.

The invention discloses a plasma hot blast stove consolidation reduction material system using CO as a medium. The plasma hot blast stove consolidation reduction material system comprises a plasma heating device, a consolidation reduction material device, a preheating air supply device and a cooling device. The material consolidation and reduction device comprises a preheating section, a consolidation and reduction section and a cooling section and is used for sequentially preheating, consolidating and reducing and cooling the materials, so that the materials in the form of powder pellets form target materials; the preheating gas supply device is used for conveying preheating gas generated by flue gas waste heat and material sensible heat in the consolidation reduction section according to a preset first temperature range into the preheating section and preheating the materials; the plasma heating device adopts CO as a medium to generate high-temperature CO plasma gas, and the materials in the consolidation reduction section are consolidated and reduced through the high-temperature CO plasma gas according to a preset second temperature range; and the cooling device adopts CO as a medium to generate low-temperature gas in a preset third temperature range, and conveys the low-temperature gas to the cooling section, so that a target material can be formed when the material is cooled to be less than or equal to 100 DEG C.

The plasma equipment electrode bar structure comprises a columnar main body made of conductive metal, the main body is provided with a cooling water channel, the cooling water channel comprises a water inlet channel and a water drainage channel, the water inlet channel extends into the inner end of the main body from a water inlet at the tail end of the outer end of the main body, and the water drainage channel extends into the inner end of the main body from a water outlet at the tail end of the outer end of the main body. The drainage channel is communicated with the water inlet channel at the tail end of the inner end part of the main body, is arranged in parallel with the water inlet channel and extends to a drainage port at the outer end part of the main body, and the water inlet and the drainage port are respectively connected with a water delivery port and a water pumping port of a cooling-water machine through hose bundles; an electrode connecting part and a mounting part are arranged at the tail end of the outer end part of the main body, and an insulating sealing structure is arranged outside the mounting part and is used for being inserted into a box mounting hole of equipment to form a sealing and insulating connecting structure; and the electrode connecting part is provided with a metal connecting point which is electrically connected with one electrode of an external plasma radio frequency power supply. The plasma cleaning device is simple in structure, the space in the plasma cleaning box body is larger, and plasma gas excitation is more stable and efficient.

Embodiments of the present disclosure generally relate to an injector assembly for use in a processing chamber, and related components and methods. In one or more embodiments, a method of substrate processing includes performing an ignition process including flowing a plasma gas into a plasma volume and igniting the plasma gas into a plasma. The method further includes performing a deposition process including flowing a processing gas into an internal volume of a process chamber and across a substrate in the internal volume and depositing a deposition structure over the substrate. The method further includes performing an insertion process including flowing an insertion gas for a time of less than 5 seconds into the plasma within the plasma volume to form effluents from the insertion gas, flowing the effluents into the internal volume and across the substrate in the internal volume, and inserting the effluents into the deposition structure.