Maskless method for preparing black silicon by deep reactive ion etching

Abstract

The invention discloses a maskless method for preparing black silicon by deep reactive ion etching, which comprises the following steps: performing initialization and plasma stability on equipment adopted by the method for preparing the black silicon so as to make plasma perform glow discharge; and controlling technological parameters for preparing the black silicon by deep reactive ion etching, and adopting etching and passivating modes to alternately process a silicon chip, wherein the parameters comprise plasma gas flow, panel etching power, panel passivating power, coil power, and etching and passivating cycle and temperature. The maskless method directly performs plasma processing on the surface of the silicon chip, and can generate large-range high-intensity nanostructures on the surface of the silicon chip in case of no nano mask by adjusting and selecting proper etching technological parameters. Meanwhile, the method for preparing the black silicon has high efficiency and low cost, and can be integrated with other micro-fabrication technology.

Description

technical field [0001] The invention relates to a method for preparing a wafer-level black silicon surface in the field of micro-nano processing, in particular to a method for preparing black silicon based on maskless deep reactive ion etching. Background technique [0002] At present, nanostructure processing has been widely used in microfluidics, bioengineering, optical sensor devices and other fields. [0003] In micro-nanostructure processing, usually for different purposes, large-scale high-density uniform nanostructures (nanotips and nanoporous) are formed in substrates such as silicon wafers to increase the surface area to volume ratio. Nanostructures are formed by etching or deposition growth and a combination of various processes. For example, nano-lithography technology is used to define a nano-mask on a silicon wafer substrate, and then a dry etching technology is used to form a nano-pillar (nanopillar). Typically, forming nanostructures by etching requires firs...

AI Technical Summary

Problems solved by technology

However, the method based on chemical synthesis of Nil still has problems such as low processing efficiency, difficult control of processing quality (i.e. shape control and uniformity), and small processing area (millimeter level).

In addition, most of the above nanofabrication methods are only applicable to flat silicon wafer surfaces and not to non-planar microstructured surfaces, which limits their integration with other microfabrication processes.

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