Orientational alignment carbon nano-tube and carbon coating cobalt nano-particle complex and preparation thereof
A carbon-coated cobalt nanometer and particle composite technology, applied in nanostructure manufacturing, nanotechnology, nanotechnology and other directions, can solve the problems of long reaction time, complex method, difficult application, etc., and achieves high work efficiency, simple operation, The effect of easy availability of raw materials
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Embodiment 1
[0029] Example 1: The steps of the preparation method of this embodiment are:
[0030] (1) Using the RF magnetron sputtering method, using Co as the target source and Ar as the discharge gas, the Co film is deposited on the Si substrate. The deposition system is a DPS-III target magnet produced by the Shenyang Scientific Instrument Development Center of the Chinese Academy of Sciences. Controlled sputtering equipment, DC sputtering current is 0.1A, DC sputtering voltage is 280V, Ar gas flow is 60.2sccm, working pressure is 0.5Pa, and deposition time is 60s.
[0031] (2) Put the Co thin film obtained in step (1) into a plasma enhanced chemical vapor deposition equipment. The deposition system is a JGP300A high-vacuum single-target high-temperature coating equipment produced by the Shenyang Scientific Instrument Development Center of the Chinese Academy of Sciences, and it is evacuated to 5Pa. Access O 2 The flow rate is 2sccm, the working pressure is 20Pa, and the temperature is in...
Embodiment 2
[0034] Example 2: The preparation method steps of this embodiment are:
[0035] (1) Using the radio frequency magnetron sputtering method, using Co as the target source and Ar as the discharge gas, the Co film is deposited on the Si substrate. The deposition system is a DPS-III target magnet produced by the Shenyang Scientific Instrument Development Center of the Chinese Academy of Sciences. Controlled sputtering equipment, DC sputtering current is 0.1A, DC sputtering voltage is 280V, Ar gas flow is 60.2sccm, working pressure is 0.5Pa, and deposition time is 60s.
[0036] (2) Put the Co thin film obtained in step (1) into a plasma enhanced chemical vapor deposition equipment. The deposition system is a JGP300A high-vacuum single-target high-temperature coating equipment produced by the Shenyang Scientific Instrument Development Center of the Chinese Academy of Sciences, and the vacuum is evacuated to 5Pa. Access O 2 The flow rate is 2sccm, the working pressure is 20Pa, and the tempe...
Embodiment 3
[0039] Example 3: The preparation method steps of this embodiment are:
[0040] (1) Using the radio frequency magnetron sputtering method, using Co as the target source and Ar as the discharge gas, the Co film is deposited on the Si substrate. The deposition system is a DPS-III target magnet produced by the Shenyang Scientific Instrument Development Center of the Chinese Academy of Sciences. Controlled sputtering equipment, DC sputtering current is 0.1A, DC sputtering voltage is 280V, Ar gas flow is 60.2sccm, working pressure is 0.5Pa, and deposition time is 60s.
[0041] (2) Put the Co thin film obtained in step (1) into a plasma enhanced chemical vapor deposition equipment. The deposition system is a JGP300A high-vacuum single-target high-temperature coating equipment produced by the Shenyang Scientific Instrument Development Center of the Chinese Academy of Sciences, and the vacuum is evacuated to 5Pa. Access O 2 The flow rate is 2sccm, the working pressure is 20Pa, and the tem...
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