262results about How to "Precise control of concentration" patented technology

The invention relates to a noble metal doped particles and metallic oxide film integrated gas sensor and a preparation method thereof. The integrated gas sensor comprises a substrate, a heating electrode, a heat-conductive insulating layer, a detecting electrode and a metallic oxide film, wherein the heating electrode is prepared on the substrate, the heat-conductive insulating layer is arranged between the heating electrode and the detecting electrode, and the metallic oxide film is covered on the detecting electrode; the integrated gas sensor is characterized in that noble metal particles are deposited on the metallic oxide film, and the noble metal particles are monatomically covered on the metallic oxide film, the coverage degree of the noble metal particles is 0.05-10% of the surface area of the metallic oxide film and the particle size is 0.2-0.4nm. The integrated gas sensor can effectively improve the gas sensitivity and the gas stability of the metallic oxide film; the metallic oxide film doped with noble metal particles can achieve the sensitivity improved to 9.46 of the noble metal and metallic oxide film from 1.51 of the pure metallic oxide film when used for testing 200ppm ethyl alcohol gas; furthermorethe gas sensitivity reaction temperature of the metallic oxide film is only 150 DEG C.

Devices, systems, and methods employed in wet cleaning semiconductor devices are provided. In particular, systems that can deliver deionized water with the desired concentration of CO2 and methods of generating deionized water with a desired concentration of CO2 for use in wet cleaning of semiconductor devices are provided.

The invention provides an optical fiber perform doper and a doping method. The optical fiber perform doper comprises a heating system, a transmission system and an improved chemical vapor deposition system. The heating system comprises heating evaporators and air-intake ducts and air-outlet ducts which communicate with the heating evaporators. The transmission system comprises a heating and heat preservation transmission pipe and a heating and heat preservation plate. An oxygen pipe used for inletting high-purity oxygen and the air-outlet ducts are respectively accessed into the heating and heat preservation transmission pipe provided with corresponding interfaces. An output end of the heating and heat preservation transmission pipe communicates with a rotating part of the improved chemical vapor deposition system. Different organic metal chelates are placed in each heating evaporator, wherein an organic metal chelate in at least one of the heating evaporators is used as a doping agent. With the application of the doper provided by the invention, all gas-phase doping can be realized, and heat preservation during the whole course makes gases not to be easily coagulated. By the adoption of the doping method, doping uniformity and consistency of the product are both raised, and performance of the product is also guaranteed appropriately.

The invention provides a growth method of type-n monocrytalline silicon. The method comprises the steps that P is selected as a main doping element of the type-n monocrystalline silicon and added in the monocrystalline silicon growth process, Ga with the opposite effect is added as an auxiliary doping element of a semiconductor monocrystalline silicon to counteract the concentration increment of P in the monocrystalline silicon, and resistance fluctuations in the monocrystalline silicon growth process are controlled. Meanwhile, when the weight of the monocrystalline silicon meets the specific requirement, the auxiliary doping element Ga is added one or more times, the comprehensive concentration of the co-doping element in the monocrystalline silicon can be further precisely controlled, fluctuations of the electrical resistivity are reduced, the influence caused by volatility of the auxiliary doping element on the concentration of the doping element in melt can also be avoided, and the monocrystalline silicon growth yield can be improved.

The invention relates to a method for preparing an er-doped silicon carbide optical waveguide through ion implantation. The method sequentially comprises the steps of crystal polishing and cleaning, oxygen ion implantation, annealing, erbium ion implantation and annealing and finally an er-doped silicon carbide waveguide is obtained. The SOI semiconductor technology is adopted in the process that a silicon dioxide lower coating layer of the er-doped silicon carbide optical waveguide is prepared, so that a silicon dioxide buried layer with the stoichiometric ratio is generated, and the refractivity difference value between the silicon dioxide buried layer and an er-doped silicon carbide waveguide core layer is large. In the er-doped silicon carbide waveguide core layer, the concentration of erbium ions accords with Gaussian distribution, the concentration of the erbium ions in the middle of the er-doped silicon carbide waveguide core layer is the highest, the fluorescence radiation efficiency of the erbium irons is effectively improved, and light gain is improved. The depth and the concentration of the implanted erbium ions can be accurately controlled through adjustment of implantation energy and implantation doses and the phenomena that waveguide gain is low due to the ultra-low concentration of the implanted erbium ions and the concentration quenching effect occurs due to the ultra-high concentration of the implanted erbium ions can be avoided.

The invention provides an ion implantation doped HfO2 based preparation process of an HfO2 MIFS ferroelectric gate. The preparation process comprises the steps of firstly, cleaning a P-Si or n-Si substrate by a standard cleaning process to remove particles and other pollutants on a Si surface, afterwards depositing an appropriate thickness of HfO2 on a silicon wafer, and performing annealing; secondly, doping HfO2 by an ion implanter, and annealing the doped HfO2; thirdly, depositing a top electrode on the doped HfO2, namely halfnium oxide ferroelectric thin film, and performing rapid thermal treatment on the electrode; and finally, etching an MFIS multi-layer thin film structure to form an MFIS array unit which is matched with the sizes of a source, a drain and a channel by a reactive ion etching method. By the preparation process, the doping concentration of the HfO2 ferroelectric gate thin film can be accurately controlled, and the preparation process is a mature operation process for preparing the thin film relatively simple to prepare and with lower preparation temperature.

The invention discloses a control system of a fully-automatic cleaning machine. The system comprises a controller with an input end and an output end, the input end of the controller is electrically connected with a liquid level detector and a temperature and pressure detector, and the output end of the controller is electrically connected with a water heating system, a spraying system, a drying and cooling system and a printing system. The control system further comprises a man-machine interface and a liquid feeding calibration system, and each of the man-machine interface and the liquid feeding calibration system is electrically connected with the input end and the output end of the controller. The control system can freely adjust the cleaning and disinfection steps according to practical requirements, and can calibrate liquid feeding.

The invention discloses an electrolysis device based on an electrowetting-on-dielectric layer principle, and a manufacturing method thereof. The electrolysis device includes: a lower electrode plate formed by sequentially arranging a first substrate, an electrode layer, a dielectric layer and a first hydrophobic layer from bottom to top; and an upper electrode plate formed by sequentially arranging a second substrate, a grounding electrode and a second hydrophobic layer from top to bottom; liquid drops D to be electrolyzed are placed between the first hydrophobic layer and the second hydrophobic layer; the electrode layer includes a plurality of electrolysis electrodes and a plurality of driving electrodes, and adjacent electrodes are electrically isolated; and the electrolysis electrodes are embedded into the driving electrodes. Liquid drops containing a specific concentration of electrolysis products with different polarities can be obtained by controlling the electrolysis process and the liquid drop splitting process. The electrolysis device has the characteristics of novel design, simple control, high automation degree and high output precision, and greatly widens the application range of digital micro-fluidics, onsite rapid detection and other technologies.

The invention provides a method and a device for medium-consistency refining and pumping. The method comprises the following steps of: after low-consistency slurry is concentrated by concentration equipment, feeding the slurry into a medium-consistency vertical pipe to regulate the consistency; and after the consistency reaches a set value, pumping the slurry into a subsequent medium-consistency disk mill. The device comprises the concentration equipment, the medium-consistency vertical pipe, a medium-consistency pump, a slurry pipe and the medium-consistency disk mill which are connected in turn, wherein two white water pipelines on the medium-consistency vertical pipe are provided with a white water coarse adjustment valve and a white water fine adjustment valve respectively; a concentration meter connected with the white water fine adjustment valve is arranged on the slurry pipe; the concentration meter controls the opening of the white water fine adjustment valve in a PID adjustment mode; and a buffer segment is formed on the slurry pipe, wherein the pipeline length of the buffer segment is at least 2 meters; and the pipe diameter of the buffer segment is 2 to 3 times larger than that of the pipeline of a non-buffer segment. Compared with the conventional method for controlling and adjusting the pump output of the medium-consistency pump by using a liquid level, the device can stabilize the pump output flow better; simultaneously, the pumping potential of the medium-consistency pump is developed better, and the pumping consistency can be improved by 2 to 4 percent.

The invention relates to the field of disease and pest control, and provides a green and safe disease and pest control method. Staging control is carried out according to different growth periods of plants. The specific control sequences and steps are as follows: (1), disease and pest control in the early stage comprises: control on damping-off, sheath blight and stubby root nematode before soil is not cultivated, and control on pests having relatively high mobility or needing adults to lay eggs and hatch, such as locusts, armyworms and moths, before plants are planted; (2), disease and pest control in seedling raising and seedling stages comprises: selection and use of disease-resistant varieties and health seedlings, disinfection of seeds and substrates, and control on whiteflies, flea beetles and cutworms in the seedling stage; and (3), disease and pest control in field planting and after field planting comprises: environmental management, water and fertilizer management, and adoption of different botanical fungicides and methods for different diseases and pests. Besides, the invention specifically discloses specific disease and pest control methods of Chinese cabbages, tomatoes, strawberries and hami melons. The green and safe disease and pest control method in the invention has the benefits that: a disease and pest control system is formed; and the method is wide in application range, good in effect and free from pesticide residue.

The invention discloses a method for preparing a longitudinal high-pressure deep-slot transistor. P-type semiconductor regions and N-type semiconductor regions are alternatively arrayed in a drift region of a device. The P-type semiconductors in the drift region are prepared by the steps of: firstly, forming deep slots by using a deep-slot etching process; secondly, filling boron-phosphorosilicate glass into the deep slots; thirdly, removing the boron-phosphorosilicate glass from the surface by etching; and finally, diffusing boron impurities and phosphorus impurities in the boron-phosphorosilicate glass into silicon on the side walls and at the bottoms of the deep slots by using an annealing process, wherein the boron impurity content of the boron-phosphorosilicate glass is far more than the phosphorus impurity content, so that the semiconductor regions on the side walls and at the bottoms of the deep slots are changed into the P-type doped semiconductor regions. The method has high process controllability and low process cost, and the manufactured device has high performance.

The invention relates to an automatic hydroponic cultivation system and method. The system comprises a PLC control system, and a nutrient solution circulation system, an illuminating system, a temperature and humidity adjusting system and an air circulation system which are connected with the PLC control system, and the nutrient solution circulation system is connected with multiple hydroponic frames. According to the system, according to the set temperature, humidity, air circulation time, nutrient solution EC value, PH value and the like, a nutrient solution reaching the set standards can beautomatically added, the nutrient solution flowing down from the hydroponic frames is recycled for secondary adjusting, the nutrient solution reaching the set EC value and PH value is output from a liquid storage barrel continuously, then the volume of addition and concentration of the nutrient solution are accurately controlled, and the growing environment of hydroponic plants is guaranteed.

The invention relates to a production method of wet phosphoric acid byproducts comprising highly pure and highly white alpha-semi-hydrated gypsum and an inorganic-organic compound fertilizer. The method comprises the following steps: carrying out an acidolysis reaction on phosphoric acid and phosphate rock powder, adding a filter aid to a mixed slurry obtained after the reaction, carrying out solid-liquid separation, washing the obtained solid phase to obtain washing water and a solid, crushing the solid, sending the crushed solid into a granulator, reacting the crushed solid with gasified ammonia in the granulator, adding fertilizers with different formulas, granulating, drying the granulated material, screening, cooling, and packaging to obtain the inorganic-organic compound fertilizer; and introducing a clear liquid obtained after the acidolysis and solid-liquid separation into a decalcification and crystal transformation tank, adding a sulfuric acid solution and a crystal transformation agent, carrying out decalcification and crystal transformation reactions, carrying out solid-liquid separation to obtain a solid and a clear liquid, adding the solid into hot water, washing, and drying to obtain the highly pure and highly white alpha-semi-hydrated gypsum. The highly pure and highly white alpha-semi-hydrated gypsum with the advantages of excellent performances, white appearance and wide uses can be produced, and the inorganic-organic compound fertilizer can be produced by using organic matters, phosphorus and resources residual in acid insoluble substances.

This invention relates to a method for preparing ZnO base dilution magnetic semiconductors with Sol-Gel method by applying Sol-Gel method combined with doped ferromagnetic ions as Fe. Co or Mn. Ni etc. to prepare ZnO base dilution magnetic semiconductor films. It is first to prepare ZnO Gel solution by dissolving a proportion of analytically pure zinc acetate and metal salt (the atomic concentration ratio of Fe and Zinc is 1-1.5%) in asolute alcohol, mixed evenly to get ZnO colloidal solution finally which is informly coated on the rotating Si chips. The film is kept for a period of time under room temperature-100 deg.C after a few minutes of heat treatment, then to go through heat treatment for 0.5-1.5 hours under nitrogen atmosphere at 500-900 deg.C.

The invention discloses a perovskite structure film with the giant magneto-impedance effect and a preparation method thereof, which belongs to the technical field of magnetic material preparation. A manganese oxide of a LaMnOx perovskite structure is used as the film, wherein x is equal to or more than 3, and is equal to or less than 4; and the thickness of the film is 10-400nm. The preparation method for the film comprises the steps as follows: an organic alkoxide compound comprising all metal ions is used as a precursor; the precursor is dissolved into ultrapure water to be stirred and dissolved to obtain precursor solution; the precursor solution is gradually added into methanol dropwise until transparent sol solution is formed; the prepared transparent sol solution is coated on an underlay or coated on the underlay through a pulling method, and is pyrolyzed and sintered in a tubular constant-temperature furnace to prepare a required perovskite structure film. The preparation method is simple and is convenient to operate, requires simpler equipment, has low cost, can prepare films of larger areas, and can precisely control the concentration of the metal ions relative to other preparation methods.

The invention relates to a method of employing ion implantation to prepare an ultra low surface doping concentration low sheet resistance silicon solar cell, so cleaning velvet can be carried out on a surface of a P type monocrystalline wafer; the method comprises the steps of: employing the ion implantation method to inject phosphor element on one surface of the velvet monocrystalline wafer so as to form a PN junction; carrying out high temperature annealing and growing oxide layer on the monocrystalline wafer; continuously depositing a passivation/anti-reflection film on a N type surface; screen printing and drying a positive electrode and a back side electrode; carrying out sintering processing preparation so as to obtain the ultra low surface doping concentration low sheet resistance silicon solar cell. Compared with the prior art, the method is good in controllability, simple in process, flat in a junction surface, flexible in technology, and good in uniformity and repeatability.

The invention relates to a papermaking method and especially relates to a method for producing paper for daily use from bagasse as a main raw material. The method comprises is characterized in that high-ratio sugarcane pulp and a small amount of wood pulp are used as main raw materials, a superhigh-concentration pulp refining technology is adopted, after pulp washing, the paper pulp is processed to form pulp having water content of 40-60wt% and then the pulp is grinded by a superhigh-concentration grinding machine, simultaneously, the automatic control system of a full-automatic beating and blending pulping technology is adopted, appropriate accessory materials are used, the concentration of paper pulp before and after each equipment treatment is adjusted, and a technology of high-speed hot air penetrating through paper pages is adopted. The method solves the problems of too high bagasse pulp paper tightness, insufficient bulkiness and a slow absorption speed.

The invention discloses an integral trickle irrigation system, which is provided with an environment detection system and an irrigation pipe network system, wherein the irrigation pipe network systemis provided with a water supply main pipe; the water supply main pipe is communicated with a fertilizer applicator; the main water pipe of the fertilizer applicator is communicated with a plurality ofwater and fertilizer configuration tanks through a fertilizer injection pipe; each water and fertilizer configuration tank is provided with a material storage tank, a processing tank and a mixing tank, wherein a smasher and a dryer are arranged in the processing tank; fertilizer is processed by the smasher and the dryer in sequence to be injected into the mixing tank along the discharge hole of the processing tank to be mixed with water, and is injected into the water supply main pipe through the main water pipe; fertilizer solutions of various concentrations can be prepared, in addition, fertilizer supply and water supply switching can be carried out, and different requirements of crops are met; and in addition, hardened solid fertilizer is smashed so as to bring convenience for solvingfertilizer, the fertilizer can be dried, the use amounts of the fertilizer and water are accurately metered, fertilizer concentration is more accurate in control, required fertilizer categories are selected for preparation according to the nutrient requirement of crops, and crop nutrient accuracy is higher in control.

The invention provides a dehydrated tailing precise blending and forced homogenizing preparation structural flow filling technology and filling system. The filling system is composed of a feeding andmetering subsystem, a stirring and preparing subsystem, a slurry conveying and filling subsystem and an automatic control system. The feeding and metering subsystem comprises a dehydrated tailing feeding and metering system, a concentrated water feeding and metering system and a cementing agent feeding and metering system. The filling technology realizes advanced material preparation, precise metering and forced activation cycle preparation and storing offset adjustment two-section stirring. The filling material ratio and filling slurry mass concentration can be accurately controlled, high-concentration homogeneous steady-state structural flow filling slurry is prepared, and the filling slurry preparation quality and filling cost are controlled. The technology and the system have strong adaptability to mining of unbalanced mines and can be used for mines with mechanically dehydrated tailing, tailing pond sand and the like as aggregates, the construction investment is saved, the periodis short, and the technology and the system are applicable to filling and station establishment of mines in various scales.