This invention belongs to the field of
crystal growth technology and discloses an
erbium-doped
bismuth silicate laser crystal and its preparation method. The features are: (1) The
bismuth silicate laser crystal is a
laser material, with
erbium ions incorporated in the form of Er₂O₃, enabling the crystal to achieve a laser output of 1.54µm. The
doping amount is 0.5~2 at.%, and the molecular formula of the
bismuth silicate crystal is Bi₄Si₃O₃. 12 (2) Select high-purity SiO2 and Bi2O3 raw materials, mix them according to the stoichiometric ratio, and prepare Bi4Si3O by
solid-state
sintering. 12
Polycrystalline material, then doped with Bi4Si3O according to the stated
doping amount. 12 Er₂O₃ is added to
polycrystalline material, mixed evenly, and sintered to obtain
erbium-doped Bi₄Si₃O₃. 12 (3) Select bismuth silicate
seed crystal, fix the
seed crystal at the seed well part at the bottom of the
crucible, load the doped
polycrystalline material into the
crucible and seal it, move it into the
ceramic tube, place it in the zone furnace, heat up, keep warm, and after seeding, grow at a certain rate to obtain erbium-doped high-output bismuth silicate laser crystal material.