17 results about "Erbium ions" patented technology

This invention discloses a 2.3 μm fiber laser based on 980 nm laser pumping, relating to the field of mid-infrared fiber laser technology. This fiber laser utilizes fluorotellurate glass fiber co-doped with thulium and erbium ions as the gain medium. It absorbs the 980 nm pump light energy by introducing erbium ion doping, and then achieves Tm through the energy transfer process between erbium and thulium ions. 3+ of 3 H4- 3 The population inversion of the H5 energy level ultimately yields laser output in the 2.3 μm band. This invention utilizes a high-power 980 nm laser as the pump source and a thulium-erbium co-doped fluorotellurate glass fiber prepared by the rod-tube method as the gain medium. By writing fiber gratings with appropriate reflectivity at both ends of the fiber, a resonant cavity with a reflection wavelength of 2.3 μm is constructed, enabling the development of a high-power 2.3 μm laser that can operate stably for a long time.

The invention discloses an erbium-doped zinc selenide composite material as well as a preparation method and application thereof. The preparation method comprises the following steps: dissolving zinc nitrate hexahydrate and erbium nitrate hexahydrate in deionized water, wherein the molar ratio of erbium ions in the zinc nitrate hexahydrate is 0.02-0.08; adding sodium selenite and sodium hydroxide; adding a reducing agent hydrazine hydrate; after hydrothermal reaction for h, washing and drying to obtain the erbium-doped zinc selenide composite material. The material is of a cubic phase ZnSe structure, erbium is uniformly doped in crystal lattices, and the material is in a nearly spherical particle shape. Rich 4f electronic defect states are introduced into a ZnSe band gap through erbium doping, charge transfer (chemical enhancement) is remarkably promoted, the free carrier concentration is improved to excite localized surface plasma resonance (electromagnetic enhancement), and the synergistic effect of two enhancement mechanisms is achieved. The detection limit of the SERS substrate to methylene blue is as low as 3.24 * 10 <-8 > mol / L, the enhancement factor is as high as 1.73 * 10 < 4 >, and a new way is provided for environmental pollutant monitoring.

The invention discloses a preparation method of stable pink erbium ion-doped zirconia ceramic with photochromic luminescence and a product thereof, 2-6 mol% yttria-stabilized zirconia (2-6YSZ) is used as a raw material, an Er (NO3) 3 solution is used as a coloring ion solution, Er < 3 + > ions are doped, and the stable pink erbium ion-doped zirconia ceramic with photochromic luminescence is obtained. The erbium ion doped zirconia ceramic which has a stable single-phase structure, is pink and has photochromic luminescence is successfully prepared through a high-temperature sintering process. The zirconia ceramic not only can generate a relatively fast photoluminescence phenomenon and has obvious color conversion, but also has relatively strong polychromatic photoluminescence performance. The product obtained by the invention has wide application prospects, and can be applied to intelligent terminal equipment, such as polychromatic photochromic luminescent ceramic backboards, information storage, encryption, ultraviolet detection, temperature monitoring and the like.

The application provides an erbium ion doped tellurium germanate glass ceramic and a preparation method and application thereof. The erbium ion doped tellurium germanate glass ceramic can emit predetermined color light through first laser and second laser excitation, the first laser wavelength is 850nm or 808nm, and the second laser wavelength is 1550nm. The erbium ion doped tellurium germanate glass ceramic not only can convert and emit light under laser excitation, but also needs to emit predetermined color light under the common irradiation of the first laser and the second laser, that is, the tellurium germanate glass ceramic has good double-frequency conversion light emitting characteristics, double-frequency excitation addressable use in the tellurium germanate glass ceramic body is realized, and thus three-dimensional display is realized. Specifically, the light path design is combined with various high-speed dynamic three-dimensional image functions of computer processing to realize dynamic three-dimensional display through addressing in the glass ceramic of the application.

This invention belongs to the field of crystal growth technology and discloses an erbium-doped bismuth silicate laser crystal and its preparation method. The features are: (1) The bismuth silicate laser crystal is a laser material, with erbium ions incorporated in the form of Er₂O₃, enabling the crystal to achieve a laser output of 1.54µm. The doping amount is 0.5~2 at.%, and the molecular formula of the bismuth silicate crystal is Bi₄Si₃O₃. 12 (2) Select high-purity SiO2 and Bi2O3 raw materials, mix them according to the stoichiometric ratio, and prepare Bi4Si3O by solid-state sintering. 12 Polycrystalline material, then doped with Bi4Si3O according to the stated doping amount. 12 Er₂O₃ is added to polycrystalline material, mixed evenly, and sintered to obtain erbium-doped Bi₄Si₃O₃. 12 (3) Select bismuth silicate seed crystal, fix the seed crystal at the seed well part at the bottom of the crucible, load the doped polycrystalline material into the crucible and seal it, move it into the ceramic tube, place it in the zone furnace, heat up, keep warm, and after seeding, grow at a certain rate to obtain erbium-doped high-output bismuth silicate laser crystal material.

A single-mode excitation color-changing luminescent upconversion material, and its preparation method are provided. The molecular formula of the single-mode excitation color-changing luminescent upconversion material is AxMOCly-1:Yb / Ln, where A is at least one of Lithium(I) ion (Li+), Sodium(I) ion (Na+), Sodium(I) ion (K+), or Cesium(I) ion (Cs+); M is at least one of Lanthanum(III) ion (La3+), Yttrium(III) ion (Y3+), Gadolinium(III) ion (Gd3+), or Lutetium(III) ion (Lu3+); Ln is at least one of Erbium(III) ion (Er3+), Holmium(III) ion (Ho3+), or Holmium(III) ion (Tm3+), with 1≤x≤4 and 4≤y≤7. The excitation wavelength range of the material is 950 nanometers (nm)-1100 nm, and the emission wavelength range is 400 nm-800 nm. Under single-mode near-infrared excitation, the material exhibits color-changing upconversion luminescence.

The invention relates to the technical field of integrated optoelectronic chips, and discloses a setting method for on-chip laser generation of a micron-thickness lithium niobate film, and the method comprises the steps: preparing a micron-thickness erbium-doped lithium niobate film waveguide on an erbium-doped lithium niobate film substrate as a gain medium, so as to enlarge the mode field area and gain volume, and improve the laser output power; sagnac annular reflectors are integrated at the two ends of the erbium-doped lithium niobate film waveguide respectively to form a Fabry-Perot resonant cavity, and the optical feedback efficiency of the resonant cavity is optimized; a pump light source is efficiently coupled to a waveguide input end through a conical lens optical fiber, erbium ions are excited to realize population inversion, and stimulated radiation light is generated; stimulated radiation light is subjected to multiple reflection resonance enhancement in the Fabry-Perot resonant cavity to form laser oscillation, laser generated by the laser oscillation is transmitted through the erbium-doped lithium niobate film waveguide and is coupled and output through the output end, and on-chip laser output of 0.36 mW or above and chip external coupling power of 114 mu W or above are achieved.

The invention relates to an erbium and sodium ion co-doped calcium fluoride material and a preparation method and application thereof.The preparation method comprises the following steps that a calcium source, an erbium source and a sodium source are dissolved in deionized water, and a solution A is obtained; dissolving a fluorine source in deionized water to obtain a solution B; dropwise adding the solution B into the solution A, and carrying out coprecipitation reaction to obtain white turbid liquid; and the white turbid liquid is subjected to standing, impurity removal and drying, and the erbium and sodium ion co-doped calcium fluoride material is obtained. The monovalent sodium ions and erbium ions are co-doped into the calcium fluoride material in a co-precipitation reaction manner, so that the sodium ions can be uniformly doped into the calcium fluoride according to the designed concentration to form erbium-sodium ion pairs, and the erbium-sodium ion pairs can maintain charge balance of the whole lattice system; the doping content of erbium ions and sodium ions doped in calcium fluoride crystal lattices can be effectively improved; meanwhile, erbium sodium ion pairs formed in calcium fluoride crystal lattices can effectively break aggregation of erbium ions, so that the intermediate infrared fluorescence intensity is improved.

The invention discloses an erbium-stabilized zirconium oxide toughened aluminum oxide composite material and a preparation method thereof, and relates to the technical field of high-performance structural ceramics, the erbium-stabilized zirconium oxide toughened aluminum oxide composite material comprises an aluminum oxide matrix and a zirconium oxide toughening phase, the volume fraction of the zirconium oxide toughening phase is 10-30 vol%, the zirconium oxide toughening phase is an erbium-stabilized tetragonal phase, and the volume fraction of the erbium-stabilized tetragonal phase is 10-30 vol%. Wherein the molar percentage of erbium oxide is 1-5 mol%; according to the composite material, erbium ions are introduced to serve as a stabilizer of zirconium oxide, effective stability of tetragonal phase zirconium oxide is achieved, meanwhile, the material is endowed with excellent fluorescence performance and can be used for stress distribution in-situ monitoring, uniform doping of erbium elements is ensured by adopting a coprecipitation method in the preparation process, and high-energy ball milling and high-temperature sintering processes are combined, so that the composite material is prepared. The density and the grain boundary bonding strength are remarkably improved, so that the material has high strength, high fracture toughness and good optical response characteristics, and is suitable for performance tracking and failure analysis of precision ceramic parts in a complex service environment.

The application discloses a rare earth doped double-color fluorescent material, a preparation method and application thereof, and has a chemical general formula of K3RESi6O 15 :xM, wherein 0.002<=x<=0.05; the RE is any one of praseodymium ions Pr 3+ , cerium ions Ce 3+ , terbium ions Tb 3+ ; the M is any one of samarium ions Sm 3+ , europium ions Eu 3+ , gadolinium ions Gd 3+ , terbium ions Tb 3+ , erbium ions Er 3+ , and the RE and the M are different rare earth ions. The rare earth element doped silicate inorganic fluorescent material has the ability of emitting light in multiple fluorescent light color domains (such as a red light region and a yellow-green light region) under different ultraviolet light excitation, and the fluorescent light emitting properties can be adjusted by changing the doped types and proportions of the rare earth elements to meet actual demands.

The invention discloses a high-purity green luminescent and high-optical temperature measurement sensitivity material and a preparation method thereof, and belongs to the technical field of optical luminescent materials. The chemical general formula of the high-purity green luminescence and high-optical temperature measurement sensitivity material is NaBi < 0.89-x > Yb < 0.1 > Er < 0.01 > Ca < x > (MoO4) 2, x is equal to 0.01-0.10, the material is a tetragonal system, the space group is I41 / a, rare earth erbium ions (Er < 3 + >) are used as active ions, rare earth ytterbium ions (Yb < 3 + >) are used as sensitizing ions, and green up-conversion emission near 530 nm and 550 nm can be generated under near-infrared excitation; the Er < 3 + > upconversion green emission ratio and the green light purity are improved by introducing non-equivalent ions Ca < 2 + > to regulate and control a matrix lattice environment and a charge compensation state, and meanwhile, the optical temperature measurement sensitivity based on the thermal coupling energy level is remarkably enhanced, so that the Er < 3 + > upconversion green emission compound has potential and wide application value in the fields of high-purity green light emission and optical temperature measurement.

The invention relates to the field of fluorescent materials in biomedicine and the like, and particularly discloses a rare earth doped strontium lutetium antimonate up-conversion luminescent material and a preparation method thereof, the material is Sr2Lu1-x-ySbO6: xEr < 3 + > and yYb < 3 + >, x is greater than or equal to 0.01 and less than or equal to 0.04, and y is greater than or equal to 0.05 and less than or equal to 0.35; the preparation method comprises the following steps: weighing strontium carbonate, lutetium oxide, erbium oxide, ytterbium oxide and antimony pentoxide according to a certain ratio as raw materials, adding a proper amount of absolute ethyl alcohol, fully stirring, drying, pressing into sheets, and sintering in a muffle furnace at 1350 DEG C for a period of time. The rare earth doped lutetium strontium antimonate up-conversion luminescent material has the beneficial effects that stronger green light is emitted, when erbium ions and ytterbium ions are at the optimal concentration, the novel luminescent material Sr2Lu0. 73SbO6: 0.02 Er < 3 + > and 0.25 Yb < 3 + > excites stronger green light at 526 nm, has a key effect in optical temperature sensing, and has a huge development prospect as a rare earth doped lutetium strontium antimonate up-conversion luminescent material.

The application discloses an erbium-doped zinc selenide composite material and a preparation method and application thereof. The preparation method comprises the following steps: dissolving zinc nitrate hexahydrate and erbium nitrate hexahydrate with a molar ratio of 0.02-0.08 in deionized water; adding sodium selenite and sodium hydroxide; then adding a reducing agent, hydrazine hydrate; after hydrothermal reaction for h, washing and drying to obtain the erbium-doped zinc selenide composite material. The material is a cubic phase ZnSe structure, and the erbium is uniformly doped in the crystal lattice in a near-spherical particle shape. The application introduces rich 4f electron defect states in the ZnSe band gap by erbium doping, significantly promotes charge transfer (chemical enhancement), and improves the free carrier concentration to excite the localized surface plasmon resonance (electromagnetic enhancement), so that the synergistic effect of the two enhancement mechanisms is realized. The detection limit of the SERS substrate for methylene blue is as low as 3.24*10 ‑8 mol / L, and the enhancement factor is as high as 1.73*10 4 , which provides a new way for environmental pollutant monitoring.

An erbium-doped optical fiber comprises an erbium-doped core radially surrounded by a glass cladding, where the erbium-doped core comprises (a) a glassy matrix comprising silica and (b) nanoscale regions dispersed within the glassy matrix. The nanoscale regions comprise erbium ions and alkaline earth ions, and the erbiumdoped optical fiber exhibits a quantum efficiency (QE) above 50%.

The invention discloses a preparation method and application of an active and passive integrated thin-film lithium niobate / lithium tantalate photonic device, and belongs to the technical field of integrated optics. The preparation method comprises the following steps: providing a lithium niobate / lithium tantalate substrate, and carrying out patterned injection of erbium ions on the surface layer of one side of the substrate to form an erbium-doped region; carrying out high-temperature annealing treatment on the substrate; and carrying out structure processing on the substrate subjected to high-temperature annealing treatment to form a waveguide structure on one side where the erbium-doped region is located, bonding the waveguide structure on the carrier substrate, and forming a lithium niobate / lithium tantalate film on the body substrate to obtain the active and passive integrated film lithium niobate / lithium tantalate photonic device. According to the invention, the scheme of first doping and then thinning is adopted, the subsequent high-temperature process is prevented from influencing the quality of a bonding interface and a thin film, the photonic integrated device with high erbium-doped quality and high luminous efficiency is realized, meanwhile, the process compatibility is realized, the yield and reliability are improved, and the production cost is reduced. And a technical route is provided for realizing a large-scale and multifunctional lithium niobate / lithium tantalate photon integrated chip.

The application discloses a kind of based on single-double mode optical fiber laser's ultra-short pulse generation method and device, method includes: pump light enters erbium-doped optical fiber by double-mode wavelength division multiplexer, excitation erbium ion to upper level and form particle number inversion, produce stimulated emission, amplify laser signal;Pass through double-mode optical fiber coupler, a small amount of laser output to outside cavity and measure, remaining laser continues to oscillate in cavity;Remaining laser passes through polarization controller and adjusts the polarization state in resonant cavity, to ensure that laser is stably transmitted in cavity, utilize carbon nanotube saturable absorber to realize the mode locking of laser, ensure that stable ultra-short pulse is generated;Laser passes through double-mode isolator and ensures that optical pulse is unidirectional operation in resonant cavity, re-enters double-mode wavelength division multiplexer and forms circulation;After periodic mode coupling, finally form stable mode-locked pulse.The application is suitable for few-mode fiber mode-locked laser, with simple structure, easy to construct and maintain, with very high stability and reliability.

The application discloses an erbium-doped optical fiber. The erbium-doped optical fiber can be applied to the fields of amplifiers, optical communication and rare earth-doped optical fiber preparation. The core of the erbium-doped optical fiber comprises a first layer and a second layer from inside to outside. The first layer comprises the center of the core. The second layer is annular, and the outer ring of the annular ring is the outer ring of the core. The average erbium ion doping concentration of the first layer is higher than that of the second layer. In the application, by reducing the erbium ion doping concentration of the second layer, the ASE can be reduced, the noise figure of the erbium-doped optical fiber is reduced, and the communication quality is improved.