34 results about "Erbium ions" patented technology

The invention discloses a high-power intermediate infrared fiber laser. The fiber laser is composed of a first pumping source, a second pumping source, a pumping beam combiner, a high-reflectivity fiber grating, a low erbium-doped fluoride fiber, a low-reflectivity fiber grating, a cladding light filter, a fiber end cap, a collimating lens and a dichroscope. The mode of combining erbium ion ground state transition achieved through fiber core pumping and erbium ion excited state transition achieved through cladding pumping is adopted, mid-infrared laser upper energy level particle number accumulation is obtained, and meanwhile laser lower energy level particles are effectively consumed through the cladding pumping transition process. And the population inversion state of the laser system is kept, and the particle circulation rate and the quantum efficiency from the pump light to the intermediate infrared laser are improved, so that the generation of high-power and high-efficiency intermediate infrared fiber laser is realized.

The invention discloses a high-efficiency erbium-ytterbium co-doped fiber laser for long-wavelength peak shifting pumping. The laser is characterized in that pump light enters an active fiber through a pump coupling device; the active optical fiber is doped with erbium ions and ytterbium ions, part of the pump light entering the active optical fiber is absorbed by the ytterbium ions, and part of the pump light entering the active optical fiber is absorbed by the erbium ions; ytterbium ions are transited from a ground state 2F7 / 2 to an excited state 2F5 / 2 energy level, cross relaxation occurs between the ytterbium ions and ground state erbium ions nearby the ytterbium ions, energy is transferred to the erbium ions, and the erbium ions are relaxed to a 4I13 / 2 energy level after transition from 4I15 / 2 to 4I11 / 2 is completed; erbium ions absorb pump light, transition from a ground state 4I15 / 2 to a 4I11 / 2 energy level and then relaxation to a 4I13 / 2 energy level are carried out, the erbium ions of the 4I13 / 2 energy level generate laser gain of 1.5 microns, and when the gain exceeds loss of a laser resonant cavity formed by the first resonant cavity feedback device and the second resonant cavity feedback device, 1.5 microns-band laser oscillation is formed and is output through the second resonant cavity feedback device. The influence of amplified spontaneous emission of ytterbium ions and excited state absorption of erbium ions on the efficiency of the laser is weakened, and the efficiency of the laser is improved.

A first pumping source and a second pumping source are combined through a pumping beam combiner and are coupled into an erbium-doped fluoride fiber and a high-reflectivity fiber bragg grating, and the erbium-doped fluoride fiber and a low-reflectivity fiber bragg grating form a laser resonant cavity. The intermediate infrared laser is output through the low-reflectivity fiber bragg grating, the cladding light filter and the optical fiber end cap; the high-reflectivity fiber bragg grating and the low-reflectivity fiber bragg grating have the same grating period, the fourth-order harmonic reflection wavelength of the grating is located in the emission spectrum range of transition of erbium ions from the 4F9 / 2 energy level to the 4I9 / 2 energy level, and the fifth-order harmonic reflection wavelength of the grating is located in the emission spectrum range of transition of erbium ions from the 4I11 / 2 energy level to the 4I13 / 2 energy level; by adjusting the power of the first pumping source and the second pumping source, the net gain of laser transitions from the 4F9 / 2 energy level to the 4I9 / 2 energy level and transitions from the 4I11 / 2 energy level to the 4I13 / 2 energy level is regulated and controlled, and switching of laser working wavelengths is achieved.

The invention relates to a high-power light source in the technical field of laser, in particular to a high-power light source for assisting an EYDFA to output a 1.5-micron wave band based on 1-micron wave band signal light, which absorbs untransferred pump light by introducing the signal light in the 1-micron wave band, further inhibits spontaneous radiation amplification of 1-micron wave band ytterbium ions, and improves the output efficiency of the 1-micron wave band ytterbium ions. The wavelength of the selected 1-micron-band signal light is located at the reabsorption wavelength of the EYDFA at the same time, the 1-micron-band signal light absorbing redundant pump light is reabsorbed by the EYDFA, energy is further transferred to erbium ions, and the conversion efficiency and output power of 1.5-micron-band laser are improved.

This invention discloses a 2.3 μm fiber laser based on 980 nm laser pumping, relating to the field of mid-infrared fiber laser technology. This fiber laser utilizes fluorotellurate glass fiber co-doped with thulium and erbium ions as the gain medium. It absorbs the 980 nm pump light energy by introducing erbium ion doping, and then achieves Tm through the energy transfer process between erbium and thulium ions. 3+ of 3 H4- 3 The population inversion of the H5 energy level ultimately yields laser output in the 2.3 μm band. This invention utilizes a high-power 980 nm laser as the pump source and a thulium-erbium co-doped fluorotellurate glass fiber prepared by the rod-tube method as the gain medium. By writing fiber gratings with appropriate reflectivity at both ends of the fiber, a resonant cavity with a reflection wavelength of 2.3 μm is constructed, enabling the development of a high-power 2.3 μm laser that can operate stably for a long time.

The present invention belongs to the field of optical communications technology, specifically a high-brightness, communication-band silicon-based luminescent film doped with a high concentration of erbium and a method for preparing the same. The present invention uses HSQ as a solvent and erbium nitrate pentahydrate as a source of erbium. Ytterbium ions and independent silicon quantum dots are co-doped, stirred, spin-coated, and subjected to high-temperature annealing to obtain a high-brightness erbium-doped silicon-based luminescent film. HSQ photoresist is used as a precursor material for the preparation of silicon nanocrystal films. After being doped with erbium and subjected to high-temperature annealing, the resulting film contains a large amount of silicon nanocrystals. The silicon nanocrystals act as sensitizers in the energy transfer process, absorbing incident photon energy and then transferring and activating erbium ions to achieve photoluminescence with a central emission wavelength of 1.54 μm. The present invention avoids the numerous defects associated with ion implantation and eliminates the need for maintaining a high vacuum. The resulting erbium-doped film has a high concentration of silicon nanocrystals, which act as erbium luminescence sensitizers, and is simple to prepare and safe to operate.

The invention discloses an erbium-doped zinc selenide composite material as well as a preparation method and application thereof. The preparation method comprises the following steps: dissolving zinc nitrate hexahydrate and erbium nitrate hexahydrate in deionized water, wherein the molar ratio of erbium ions in the zinc nitrate hexahydrate is 0.02-0.08; adding sodium selenite and sodium hydroxide; adding a reducing agent hydrazine hydrate; after hydrothermal reaction for h, washing and drying to obtain the erbium-doped zinc selenide composite material. The material is of a cubic phase ZnSe structure, erbium is uniformly doped in crystal lattices, and the material is in a nearly spherical particle shape. Rich 4f electronic defect states are introduced into a ZnSe band gap through erbium doping, charge transfer (chemical enhancement) is remarkably promoted, the free carrier concentration is improved to excite localized surface plasma resonance (electromagnetic enhancement), and the synergistic effect of two enhancement mechanisms is achieved. The detection limit of the SERS substrate to methylene blue is as low as 3.24 * 10 <-8 > mol / L, the enhancement factor is as high as 1.73 * 10 < 4 >, and a new way is provided for environmental pollutant monitoring.

The invention discloses a preparation method of stable pink erbium ion-doped zirconia ceramic with photochromic luminescence and a product thereof, 2-6 mol% yttria-stabilized zirconia (2-6YSZ) is used as a raw material, an Er (NO3) 3 solution is used as a coloring ion solution, Er < 3 + > ions are doped, and the stable pink erbium ion-doped zirconia ceramic with photochromic luminescence is obtained. The erbium ion doped zirconia ceramic which has a stable single-phase structure, is pink and has photochromic luminescence is successfully prepared through a high-temperature sintering process. The zirconia ceramic not only can generate a relatively fast photoluminescence phenomenon and has obvious color conversion, but also has relatively strong polychromatic photoluminescence performance. The product obtained by the invention has wide application prospects, and can be applied to intelligent terminal equipment, such as polychromatic photochromic luminescent ceramic backboards, information storage, encryption, ultraviolet detection, temperature monitoring and the like.

The application provides an erbium ion doped tellurium germanate glass ceramic and a preparation method and application thereof. The erbium ion doped tellurium germanate glass ceramic can emit predetermined color light through first laser and second laser excitation, the first laser wavelength is 850nm or 808nm, and the second laser wavelength is 1550nm. The erbium ion doped tellurium germanate glass ceramic not only can convert and emit light under laser excitation, but also needs to emit predetermined color light under the common irradiation of the first laser and the second laser, that is, the tellurium germanate glass ceramic has good double-frequency conversion light emitting characteristics, double-frequency excitation addressable use in the tellurium germanate glass ceramic body is realized, and thus three-dimensional display is realized. Specifically, the light path design is combined with various high-speed dynamic three-dimensional image functions of computer processing to realize dynamic three-dimensional display through addressing in the glass ceramic of the application.

The invention discloses a tunable mid-infrared fiber laser with high power flatness. A pumping source enters an erbium-doped fiber through a pumping / signal coupler, and a low-reflectivity cavity mirror, the erbium-doped fiber, a laser collimator and a tuned filter form a laser resonant cavity; the low-reflectivity cavity mirror and the pumping / signal coupler are coupled to output intermediate infrared laser, the tuning filter device is used for realizing a wavelength tuning function, and the insertion loss difference value of the device under different working wavelengths is less than 0.5 dB; the wavelength of the pumping source is in a 1.6-1.7 micron wave band, erbium ions are pumped from a ground state energy level to a laser upper energy level, and laser lower energy level particles are consumed; the stable insertion loss in the process of adjusting the working wavelength by using a tuning filter device is combined with the characteristics that the emission cross section and the absorption cross section of erbium ions are gradually reduced along with the increase of the wavelength and the reduction rate of the absorption cross section is greater than that of the emission cross section, so that the gain difference caused by the emission cross section difference under different laser wavelengths of the fiber laser is reduced; and the power flatness of the fiber laser under different tuning wavelengths is improved.

The preparation method comprises the following steps that S1, a calcium source and an erbium source are dissolved in deionized water, and a solution A containing the calcium ions and the erbium ions is obtained; dissolving a fluorine source in deionized water to obtain a solution B containing fluorine ions; and S2, under the heating condition of 50-85 DEG C, dropwise adding the solution B into the solution A, and carrying out stirring reaction, static aging, washing and drying to obtain the erbium-doped calcium fluoride. According to the method, reaction is carried out in an aqueous solution with the temperature higher than the room temperature, the collision probability of calcium ions, erbium ions and fluorine ions is effectively increased, the doping concentration of the erbium ions in calcium fluoride crystal lattices can be increased to the maximum degree in the process that calcium and fluorine ions are combined and react to generate calcium fluoride, and pure-phase calcium fluoride is generated. And the high-concentration erbium-ion-doped erbium-doped calcium fluoride synthesized by the method is simple in process, short in preparation period and beneficial to industrial mass production.

This invention belongs to the field of crystal growth technology and discloses an erbium-doped bismuth silicate laser crystal and its preparation method. The features are: (1) The bismuth silicate laser crystal is a laser material, with erbium ions incorporated in the form of Er₂O₃, enabling the crystal to achieve a laser output of 1.54µm. The doping amount is 0.5~2 at.%, and the molecular formula of the bismuth silicate crystal is Bi₄Si₃O₃. 12 (2) Select high-purity SiO2 and Bi2O3 raw materials, mix them according to the stoichiometric ratio, and prepare Bi4Si3O by solid-state sintering. 12 Polycrystalline material, then doped with Bi4Si3O according to the stated doping amount. 12 Er₂O₃ is added to polycrystalline material, mixed evenly, and sintered to obtain erbium-doped Bi₄Si₃O₃. 12 (3) Select bismuth silicate seed crystal, fix the seed crystal at the seed well part at the bottom of the crucible, load the doped polycrystalline material into the crucible and seal it, move it into the ceramic tube, place it in the zone furnace, heat up, keep warm, and after seeding, grow at a certain rate to obtain erbium-doped high-output bismuth silicate laser crystal material.

The utility model provides an in-band pumping optical fiber amplifier. The optical fiber amplifier comprises a first isolator, a first gain optical fiber and a second isolator which are sequentially arranged along the direction of an optical path, at least one first beam combiner is arranged between the first isolator and the second isolator and is connected with at least one pumping device in a beam combining mode, and the pumping device is an amplifier structure pumping device or an oscillator structure pumping device. According to the utility model, the design is reasonable, the 1535nm pumping wavelength selected by the optical fiber amplifier and the target L-band laser wavelength (1565nm-1625nm) are in the same energy band of erbium ions, the quantum loss between the 1535nm pumping wavelength and the target L-band laser wavelength is small, the pumping efficiency of the laser can be effectively improved, and the thermal load of the laser can be reduced, so that the light output power and efficiency of the laser are improved, and the noise characteristic of the laser is improved.

An erbium-doped optical fiber comprises an erbium-doped core radially surrounded by a glass cladding, where the erbium-doped core comprises (a) a glassy matrix comprising silica and (b) nanoscale regions dispersed within the glassy matrix. The nanoscale regions comprise erbium ions and alkaline earth ions, and the erbiumdoped optical fiber exhibits a quantum efficiency (QE) above 50%.

A single-mode excitation color-changing luminescent upconversion material, and its preparation method are provided. The molecular formula of the single-mode excitation color-changing luminescent upconversion material is AxMOCly-1:Yb / Ln, where A is at least one of Lithium(I) ion (Li+), Sodium(I) ion (Na+), Sodium(I) ion (K+), or Cesium(I) ion (Cs+); M is at least one of Lanthanum(III) ion (La3+), Yttrium(III) ion (Y3+), Gadolinium(III) ion (Gd3+), or Lutetium(III) ion (Lu3+); Ln is at least one of Erbium(III) ion (Er3+), Holmium(III) ion (Ho3+), or Holmium(III) ion (Tm3+), with 1≤x≤4 and 4≤y≤7. The excitation wavelength range of the material is 950 nanometers (nm)-1100 nm, and the emission wavelength range is 400 nm-800 nm. Under single-mode near-infrared excitation, the material exhibits color-changing upconversion luminescence.

This application relates to an optical time-domain reflectometer, a signal generation method, apparatus, device, and medium, comprising a laser, a first optical switch, an EDFA amplifier, and a second optical switch connected in sequence. A timing control unit controls the first and second optical switches to periodically open and close to form periodic optical pulse signals. Within one cycle, the second optical switch opens and closes with a delay relative to the first optical switch, and this delayed opening and closing control generates the required pulse width. When the optical signal is normally output in the current cycle, erbium ions excited by the pump light of the EDFA amplifier amplify the signal light. If the input light is cut off, the metastable erbium ions continue to accumulate to a saturation state. When the signal light input is restored in the next cycle, an energy jump occurs, causing an optical surge. The output optical power increases instantaneously, increasing the pulse peak value, thereby improving the dynamic range of the optical time-domain reflectometer and enabling the detection of hollow-core optical fibers.

The invention discloses a high-gain on-silicon nitride chip optical amplifier and a preparation method thereof. The amplifier comprises a silicon substrate, a silicon dioxide lower cladding, an erbium-ytterbium co-doped silicon nitride waveguide core layer and a silicon dioxide upper cladding from bottom to top, wherein silicon dioxide side claddings are arranged on the two sides of the core layer. The preparation method is characterized in that an ion implantation technology with energy of 400-500 keV is adopted, erbium ions with implantation dose of 1.0 * 10 < 15 >-5.0 * 10 < 15 > ions / cm < 2 > and ytterbium ions with implantation dose of 5 * 10 < 14 >-5 * 10 < 15 > ions / cm < 2 > are co-doped into the silicon nitride waveguide core layer, and a specific high-temperature annealing process is combined. By optimizing the waveguide structure, compatibility of low-energy ion implantation and high-light-field overlapping factors is achieved, the problem of quenching of high-concentration erbium ions is effectively solved, finally, the amplifier obtains net gain exceeding 30 dB in the 1550 nm wave band, and the amplifier has the advantages of being high in gain, compatible with the CMOS technology, capable of achieving large-scale on-chip integration and the like.

The invention discloses a polymer waveguide amplifier capable of realizing L-band light amplification and improving C-band light amplification gain and a preparation method thereof, and belongs to the technical field of erbium-doped polymer optical waveguide amplifiers. Erbium is taken as one of matrixes, and meanwhile, the erbium and other elements are taken as matrixes together to prepare an alloy compound; the erbium element serving as the matrix is equivalent to increase the concentration of erbium in the compound, and the erbium element and other elements jointly serve as the matrix to form the alloy, so that the concentration quenching effect of erbium can be reduced; alloy compound particles are compounded in a polymer to prepare a gain medium of the polymer waveguide amplifier; preparing a polymer-based optical waveguide amplifier by taking the gain medium of the composite alloy compound particles as a core layer; according to the optical waveguide amplifier prepared through the method, the erbium ion concentration in the gain medium can be larger than or equal to 1018 cm <-3 >, high gain can be obtained in the L wave band and reaches 12 dB, light amplification of the polymer optical waveguide amplifier in the L wave band is achieved, and meanwhile the relative gain of the polymer optical waveguide amplifier in the C wave band can be improved.

The invention relates to the technical field of integrated optoelectronic chips, and discloses a setting method for on-chip laser generation of a micron-thickness lithium niobate film, and the method comprises the steps: preparing a micron-thickness erbium-doped lithium niobate film waveguide on an erbium-doped lithium niobate film substrate as a gain medium, so as to enlarge the mode field area and gain volume, and improve the laser output power; sagnac annular reflectors are integrated at the two ends of the erbium-doped lithium niobate film waveguide respectively to form a Fabry-Perot resonant cavity, and the optical feedback efficiency of the resonant cavity is optimized; a pump light source is efficiently coupled to a waveguide input end through a conical lens optical fiber, erbium ions are excited to realize population inversion, and stimulated radiation light is generated; stimulated radiation light is subjected to multiple reflection resonance enhancement in the Fabry-Perot resonant cavity to form laser oscillation, laser generated by the laser oscillation is transmitted through the erbium-doped lithium niobate film waveguide and is coupled and output through the output end, and on-chip laser output of 0.36 mW or above and chip external coupling power of 114 mu W or above are achieved.

The invention relates to an erbium and sodium ion co-doped calcium fluoride material and a preparation method and application thereof.The preparation method comprises the following steps that a calcium source, an erbium source and a sodium source are dissolved in deionized water, and a solution A is obtained; dissolving a fluorine source in deionized water to obtain a solution B; dropwise adding the solution B into the solution A, and carrying out coprecipitation reaction to obtain white turbid liquid; and the white turbid liquid is subjected to standing, impurity removal and drying, and the erbium and sodium ion co-doped calcium fluoride material is obtained. The monovalent sodium ions and erbium ions are co-doped into the calcium fluoride material in a co-precipitation reaction manner, so that the sodium ions can be uniformly doped into the calcium fluoride according to the designed concentration to form erbium-sodium ion pairs, and the erbium-sodium ion pairs can maintain charge balance of the whole lattice system; the doping content of erbium ions and sodium ions doped in calcium fluoride crystal lattices can be effectively improved; meanwhile, erbium sodium ion pairs formed in calcium fluoride crystal lattices can effectively break aggregation of erbium ions, so that the intermediate infrared fluorescence intensity is improved.

The invention discloses an erbium-stabilized zirconium oxide toughened aluminum oxide composite material and a preparation method thereof, and relates to the technical field of high-performance structural ceramics, the erbium-stabilized zirconium oxide toughened aluminum oxide composite material comprises an aluminum oxide matrix and a zirconium oxide toughening phase, the volume fraction of the zirconium oxide toughening phase is 10-30 vol%, the zirconium oxide toughening phase is an erbium-stabilized tetragonal phase, and the volume fraction of the erbium-stabilized tetragonal phase is 10-30 vol%. Wherein the molar percentage of erbium oxide is 1-5 mol%; according to the composite material, erbium ions are introduced to serve as a stabilizer of zirconium oxide, effective stability of tetragonal phase zirconium oxide is achieved, meanwhile, the material is endowed with excellent fluorescence performance and can be used for stress distribution in-situ monitoring, uniform doping of erbium elements is ensured by adopting a coprecipitation method in the preparation process, and high-energy ball milling and high-temperature sintering processes are combined, so that the composite material is prepared. The density and the grain boundary bonding strength are remarkably improved, so that the material has high strength, high fracture toughness and good optical response characteristics, and is suitable for performance tracking and failure analysis of precision ceramic parts in a complex service environment.

The application discloses a rare earth doped double-color fluorescent material, a preparation method and application thereof, and has a chemical general formula of K3RESi6O 15 :xM, wherein 0.002<=x<=0.05; the RE is any one of praseodymium ions Pr 3+ , cerium ions Ce 3+ , terbium ions Tb 3+ ; the M is any one of samarium ions Sm 3+ , europium ions Eu 3+ , gadolinium ions Gd 3+ , terbium ions Tb 3+ , erbium ions Er 3+ , and the RE and the M are different rare earth ions. The rare earth element doped silicate inorganic fluorescent material has the ability of emitting light in multiple fluorescent light color domains (such as a red light region and a yellow-green light region) under different ultraviolet light excitation, and the fluorescent light emitting properties can be adjusted by changing the doped types and proportions of the rare earth elements to meet actual demands.

The invention discloses a method for tuning the wavelength of a mid-infrared fiber laser, which comprises the following steps of: emitting 4F9 / 2 to 4I9 / 2 transition corresponding to erbium ions by 3.5 mu m waveband laser in an erbium-doped mid-infrared fiber laser, and simultaneously pumping by adopting double wavelengths of 0.98 mu m and 2 mu m; pumping erbium ions in a ground state 4I15 / 2 to a virtual ground state 4I11 / 2 by the pump light in the 0.98 [mu] m wave band, absorbing the pump light in the 2 [mu] m wave band by the erbium ions in the virtual ground state 4I11 / 2, and exciting to a laser upper energy level 4F9 / 2; when the number of erbium ions on the laser upper energy level 4F9 / 2 is larger than that of erbium ions on the laser lower energy level 4I9 / 2, laser gain is formed; the laser gain rises along with erbium ion accumulation on 4F9 / 2, and laser oscillation output is formed when the laser gain exceeds loss.

The invention discloses a high-purity green luminescent and high-optical temperature measurement sensitivity material and a preparation method thereof, and belongs to the technical field of optical luminescent materials. The chemical general formula of the high-purity green luminescence and high-optical temperature measurement sensitivity material is NaBi < 0.89-x > Yb < 0.1 > Er < 0.01 > Ca < x > (MoO4) 2, x is equal to 0.01-0.10, the material is a tetragonal system, the space group is I41 / a, rare earth erbium ions (Er < 3 + >) are used as active ions, rare earth ytterbium ions (Yb < 3 + >) are used as sensitizing ions, and green up-conversion emission near 530 nm and 550 nm can be generated under near-infrared excitation; the Er < 3 + > upconversion green emission ratio and the green light purity are improved by introducing non-equivalent ions Ca < 2 + > to regulate and control a matrix lattice environment and a charge compensation state, and meanwhile, the optical temperature measurement sensitivity based on the thermal coupling energy level is remarkably enhanced, so that the Er < 3 + > upconversion green emission compound has potential and wide application value in the fields of high-purity green light emission and optical temperature measurement.

The present invention discloses a method for preparing erbium-ytterbium-doped LaTa7O by a molten salt method. 19 Methods and applications of upconversion phosphors. One method is to prepare Er-Yb doped LaTa7O by molten salt method. 19 The method of up-conversion phosphor is based on the chemical composition La a Er b Yb c Ta7O 19 The stoichiometric ratio of each element in the mixture is 1, where a+b+c=1. Weigh the lanthanum ion La 3+ Compounds containing erbium ions Er 3+ Compounds containing ytterbium ions Yb 3+ Compounds and compounds containing tantalum ions Ta 5+ The compounds are mixed and ground, and then an excess of potassium chloride (KCl) is added to mix evenly. The material is sintered at 770°C or above for 2-168 hours. After sintering, the powder is cooled to room temperature and filtered with deionized water to obtain an upconversion luminescent material. LaTa7O prepared by the present invention 19 :Er 3+ / Yb 3+ Upconversion phosphor material, under 980nm excitation, the green light integral area reaches β-NaYF4:Er 3+ / Yb 3+ It can replace β-NaYF4:Er in the fields of fluorescence display, high corrosion environment with pH=0 or pH>12, high temperature environment above 450℃ and temperature sensing. 3+ / Yb 3+ Phosphor.

The invention relates to a preparation and improvement method and application of a lanthanide ion doped perovskite luminescent material. The lanthanide ion doped perovskite luminescent material has a general formula shown as a formula I: Cs2 (Na / Ag) InCl6: Mo4 < + > / R < 3 + >, r < 3 + > is selected from holmium ions, erbium ions, thulium ions or ytterbium ions. The absorption efficiency of the lanthanide ion doped perovskite luminescent material is effectively improved through a double-sensitization improvement strategy, and the synthesized luminescent material with the general formula I can realize ultra-wide absorption and efficient near-infrared emission. Experimental results show that the quantum efficiency of the prepared lanthanide ion doped perovskite luminescent material can reach 100% at most, the excitation wavelength range is 250-850nm, and the emission spectrum has the advantages of wide band, high efficiency and the like. The strategy for improving the absorption efficiency of the lanthanide ions, provided by the invention, is suitable for various lanthanide ions, and has a good popularization value in near-infrared imaging and night vision application.

The invention relates to the field of fluorescent materials in biomedicine and the like, and particularly discloses a rare earth doped strontium lutetium antimonate up-conversion luminescent material and a preparation method thereof, the material is Sr2Lu1-x-ySbO6: xEr < 3 + > and yYb < 3 + >, x is greater than or equal to 0.01 and less than or equal to 0.04, and y is greater than or equal to 0.05 and less than or equal to 0.35; the preparation method comprises the following steps: weighing strontium carbonate, lutetium oxide, erbium oxide, ytterbium oxide and antimony pentoxide according to a certain ratio as raw materials, adding a proper amount of absolute ethyl alcohol, fully stirring, drying, pressing into sheets, and sintering in a muffle furnace at 1350 DEG C for a period of time. The rare earth doped lutetium strontium antimonate up-conversion luminescent material has the beneficial effects that stronger green light is emitted, when erbium ions and ytterbium ions are at the optimal concentration, the novel luminescent material Sr2Lu0. 73SbO6: 0.02 Er < 3 + > and 0.25 Yb < 3 + > excites stronger green light at 526 nm, has a key effect in optical temperature sensing, and has a huge development prospect as a rare earth doped lutetium strontium antimonate up-conversion luminescent material.

The application discloses an erbium-doped zinc selenide composite material and a preparation method and application thereof. The preparation method comprises the following steps: dissolving zinc nitrate hexahydrate and erbium nitrate hexahydrate with a molar ratio of 0.02-0.08 in deionized water; adding sodium selenite and sodium hydroxide; then adding a reducing agent, hydrazine hydrate; after hydrothermal reaction for h, washing and drying to obtain the erbium-doped zinc selenide composite material. The material is a cubic phase ZnSe structure, and the erbium is uniformly doped in the crystal lattice in a near-spherical particle shape. The application introduces rich 4f electron defect states in the ZnSe band gap by erbium doping, significantly promotes charge transfer (chemical enhancement), and improves the free carrier concentration to excite the localized surface plasmon resonance (electromagnetic enhancement), so that the synergistic effect of the two enhancement mechanisms is realized. The detection limit of the SERS substrate for methylene blue is as low as 3.24*10 ‑8 mol / L, and the enhancement factor is as high as 1.73*10 4 , which provides a new way for environmental pollutant monitoring.

The invention relates to the technical field of lithium niobate film materials, in particular to a preparation method of an erbium-doped lithium niobate film based on a proper-temperature ion exchange principle, which comprises the following steps: mixing erbium nitrate and potassium nitrate to prepare a molten doping reagent; putting a lithium niobate film subjected to surface treatment, and carrying out thermal diffusion doping reaction; and cooling, taking out the doped lithium niobate film, washing, drying and annealing to obtain the erbium-doped lithium niobate film. On the basis of a proper temperature ion exchange principle, effective diffusion of erbium ions in a lithium niobate matrix can be realized under a relatively low temperature condition, so that the optical performance of the film is optimized while the structural integrity of the film is maintained; and crystallization distortion and internal stress accumulation caused by high-temperature treatment are avoided.

An erbium-doped optical fiber comprises an erbium-doped core radially surrounded by a glass cladding, where the erbium-doped core comprises (a) a glassy matrix comprising silica and (b) nanoscale regions dispersed within the glassy matrix. The nanoscale regions comprise erbium ions and alkaline earth ions, and the erbiumdoped optical fiber exhibits a quantum efficiency (QE) above 50%.