Chromium and praseodymium sensitized ions co-doped gadolinium gallium garnet novel laser crystal activated by erbium ions

A technology of gadolinium gallium garnet and laser crystal, applied in the field of laser crystal materials, can solve the problems of less research on laser crystal, no research report, low conversion efficiency, etc.

Inactive Publication Date: 2010-01-06
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

Because Er 3+ of 4 I 13/2 → 4 I 15/2 Transition produces 1.54um laser, with 4 I 11/2 → 4 I 13/2 The 2.6-3.0 μm laser generated by the transition forms a strong competition, which makes the laser threshold in the 2.6-3.0 μm band very high and the conversion efficiency is very low. 3 Ga 5 o 12 Middle Er 3+ laser upper level 4 I 11/2 lifetime and lower energy level 4 I 13/2 The lifetime is similar to that of YSGG, but Gd 3 Ga 5 o 12 Middle Er 3+ laser upper level 4 I 11/2 The lifetime (0.96ms) is longer than that of Er in YAG 3+ laser upper level 4 I 11/2 The lifetime (0.12ms) is much longer, and the low

Method used

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  • Chromium and praseodymium sensitized ions co-doped gadolinium gallium garnet novel laser crystal activated by erbium ions
  • Chromium and praseodymium sensitized ions co-doped gadolinium gallium garnet novel laser crystal activated by erbium ions

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Embodiment 1

[0015] Example 1: Cr:Er:Pr:Gd 3 Ga 5 O 12 Crystal growth preparation

[0016] The instrument used for crystal pulling method growth is an intermediate frequency pulling furnace of DJL-400, and the intermediate frequency power supply model is KGPF25-0.3-2.5. The temperature is controlled by Pt / Pt-Rh thermocouple and Eurometer model 815EPC. The crucible used is Φ55mm×30mm iridium crucible, and the raw material used is 4N grade Gd 2 O 3 , Ga 2 O 3 , Er 2 O 3 , Cr 2 O 3 , Pr 2 O 3 . The raw materials are prepared according to the following chemical reaction formula:

[0017] 3Gd 2 O 3 +5Ga 2 O 3 +xEr 2 O 3 +yPr 2 O 3 →2Gd 3 Er x Pr y Ga 5 O 12 ↑x=30at%~50at%; y=0.5at%~5at%; Cr 2 O 3 The weight is 0.5wt% to 3wt% of the total weight of the raw materials. Mix the raw materials uniformly, press them into flakes, place them in a platinum crucible, slowly raise the temperature to the predetermined sintering temperature at 150°C / h, and repeat this process until the result of X-ray powder di...

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Abstract

The invention relates to a chromium and praseodymium sensitized ions co-doped gadolinium gallium garnet novel laser crystal activated by erbium ions. The crystal material has a chemical formula of Cr:Er:Pr:Gd3Ga5O12. Gd2O3, Ga2O3, Er2O3, Cr2O3 and Pr2O3 of 4N are used as raw materials which are subjected to high-temperature solid-phase reaction to obtain Cr:Er:Pr:Gd3Ga5O12 raw material and used to grow the crystal by a crystal pulling method under the condition of nitrogen atmosphere. The material is used for achieving tunable laser output of 2,600 to 3,000nm waveband.

Description

Technical field [0001] The invention relates to the field of laser crystal materials. Background technique [0002] Lasers in the 2.6~3.0μm band have broad application prospects in the fields of atmospheric remote sensing, infrared lidar, laser medical treatment and national defense security. Especially the mid-infrared lasers in the 3.0um~5.0μm band are the most lacking and most urgently needed light source bands. One, it has a wide range of applications in both national defense and civil use. In terms of national defense security and environmental protection, because this band or the transmission window in the atmosphere is a source of interference that must be relied on and applied in optoelectronic countermeasures and antimissile; Because of being in the "molecular fingerprint" area, it can also be used to detect chemical substances at a long distance, playing a key role in anti-chemical warfare and environmental protection. [0003] Er 3+ Ion-activated laser crystals can prod...

Claims

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Application Information

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IPC IPC(8): C30B29/28C30B15/00C30B27/02
Inventor 涂朝阳王燕游振宇李坚富朱昭捷
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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