16 results about "Gadolinium gallium garnet" patented technology

The invention relates to an intermediate infrared holmium-praseodymium-calcium-magnesium-zirconium co-doped gadolinium-gallium garnet laser crystal as well as a preparation method and application thereof, and belongs to the technical field of single crystals or uniform polycrystalline materials with certain structures. The mid-infrared holmium-praseodymium-calcium-magnesium-zirconium co-doped gadolinium-gallium garnet laser crystal comprises a host crystal, active ions, de-active ions and auxiliary ions, the host crystal is a gadolinium gallium garnet crystal, the activating ion is Ho < 3 + >, the deactivating ion is Pr < 3 + >, and the auxiliary ions at least comprise Ca < 2 + >, Mg < 2 + > and Zr < 4 + >; the doping concentration of Pr < 3 + > is greater than or equal to 0.05 at%. The mid-infrared holmium-praseodymium-calcium-magnesium-zirconium co-doped gadolinium-gallium garnet laser crystal has the advantages of low laser threshold and high laser output power and efficiency.

The invention relates to the technical field of processing methods of optoelectronic materials, and mainly relates to a grinding and polishing process of a magnetic thin film epitaxial substrate material-calcium magnesium zirconium doped gadolinium gallium garnet (Ca, Mg, Zr: GGG, hereinafter abbreviated as SGGG) single crystal substrate. Comprising the key steps of disc loading, thinning and leveling, mechanical grinding and polishing, chemical mechanical polishing (CMP) and the like, as shown in figure 1. The invention also relates to a special binder, a grinding liquid and a polishing liquid in the SGGG substrate processing process, and the ultra-smooth (the roughness is less than or equal to 0.5 nm) and ultra-flat (the flatness is less than or equal to 5 [mu] m) SGGG single crystal substrate can be obtained through the technological process, the corresponding grinding liquid and the corresponding chemical polishing liquid, so that the epitaxial growth requirement of a YIG or RIG magnetic film is met.

The invention provides a high-performance quantum memory device structure, and belongs to the field of novel magnetic random access memories. According to the invention, a spin heterojunction is constructed and an abnormal Hall effect (AHE) is utilized to change a Hall voltage so as to realize storage of data '0' and '1'. The spin heterojunction is composed of three layers of materials which are respectively a single crystal substrate gadolinium gallium garnet (Gd3Ga5O12, GGG), a Bi-doped rare earth iron garnet film Bi: HoIG and a heavy metal layer Au-doped PtBi alloy Au: PtBi from bottom to top, and the heavy metal layer is of a cross structure. The memory device structure is small in critical flip current, low in power consumption, high in storage speed, simple to prepare, low in manufacturing cost and short in manufacturing period. And the memory device structure has the advantages of non-volatility, good film material quality and excellent performance.

A gadolinium gallium garnet single crystal and method of forming said crystal is disclosed. The single gadolinium gallium garnet crystal can have a diameter of greater than 102mm and a density of dislocations of less than 1 cm-2 in a central 80% of the crystal.

The invention discloses a thulium iron garnet film with adjustable magnetic anisotropy and surface roughness and a preparation method thereof, the preparation method comprising the following steps: placing a gadolinium gallium garnet substrate and a thulium iron garnet target in a cavity of a pulsed laser deposition device; after the cavity is evacuated, oxygen is introduced, and the oxygen pressure is adjusted to 10-30Pa; after heating, the laser is turned on and the laser energy is adjusted, and then the thulium iron garnet target is pre-bombarded by laser; after the pre-bombardment is completed, the thulium iron garnet target is bombarded again to grow a film on the gadolinium gallium garnet substrate; after the bombardment is completed, in-situ annealing is performed, and the thulium iron garnet film with adjustable magnetic anisotropy and surface roughness is obtained after the growth oxygen pressure is kept cooled to room temperature. The magnetic anisotropy and surface roughness of the thulium iron garnet film obtained by the present invention are adjustable, which provides the possibility for the further application of the thulium iron garnet film in spin electronics.

A magnetic cooling device includes a magnetocaloric element, the magnetocaloric element being a paramagnetic garnet ceramic. The density of the paramagnetic garnet ceramic is preferably greater than or equal to 90%. The garnet ceramic is preferably a gadolinium gallium garnet ceramic or an ytterbium gallium garnet ceramic.

The invention discloses a laser amplifier based on light emitting diode pumping, which comprises a pumping source, a resonant cavity and a gain medium, the pumping source is a light emitting diode, and the light emitting range of the pumping source is matched with the absorption interval of the gain medium; the light-emitting material in the light-emitting diode comprises any two or more of gallium (Ga), arsenic (As), phosphorus (P), nitrogen (N), aluminum (Al) and indium (In); the gain medium comprises one or more of yttrium aluminum garnet, gadolinium gallium garnet, glass, vanadate, tungstate or ceramic, the gain medium body is doped with active ions, and the active ions are one or more of Yb < 3 + >, Nd < 3 + >, Tm < 3 + > or Ho < 3 + >. The method has remarkable technical advantages in the aspects of improving efficiency, reducing cost, increasing applicability, optimizing heat dissipation, improving performance and environmental friendliness and the like.

The invention discloses a growth method of calcium-magnesium-zirconium doped gadolinium-gallium garnet, and relates to the field of crystal material preparation, and the method comprises the following steps: (1) raw material preparation and pretreatment: selecting Gd2O3, Ga2O3, CaCO3, MgO and ZrO2 powder with the purity greater than or equal to 99.99%, dividing the powder into a core layer, a transition layer and a surface layer according to a stoichiometric ratio to prepare a gradient doped precast block, and roasting the gradient doped precast block at 800 DEG C for 4 hours for later use; (2) equipment transformation and debugging: transforming the Czochralski growth furnace into an upper and lower independent double-temperature-zone structure, equipping a PID intelligent temperature control system, and debugging to form a stable temperature field with an axial temperature difference of less than 5 DEG C / cm and a radial temperature difference of 2 DEG C; through a gradient synergistic doping technology, crystal lattices of the inch SGGG crystal are effectively improved, the mismatching rate of the inch SGGG crystal and a high-bismuth iron garnet epitaxial layer is reduced, the problem of interface defects caused by lattice mismatching of a traditional GGG crystal is solved, the quality of the epitaxial layer is remarkably improved, and growth and preparation of the large-size, low-defect and high-uniformity SGGG crystal are achieved.

A gadolinium gallium garnet single crystal and method of forming said crystal is disclosed. The single gadolinium gallium garnet crystal can have a diameter of greater than 102 mm and a density of dislocations of less than 1 cm−2 in a central 80% of the crystal.

The chemical formula of the rare earth gadolinium-based borate monocrystal is K3Gd3 (BO3) 4, the rare earth gadolinium-based borate monocrystal belongs to a monoclinic system, the space group of the rare earth gadolinium-based borate monocrystal is P21 / c, and the cell parameters of the rare earth gadolinium-based borate monocrystal are alpha = 90 degrees, beta = 110.4705 (34), gamma = 90 degrees and Z = 16. The rare earth gadolinium-based borate single crystal shows excellent magnetic refrigeration performance in a low-temperature area, and compared with an existing commercial material gadolinium gallium garnet (GGG) crystal, the rare earth gadolinium-based borate single crystal has more excellent magnetic entropy change value and refrigeration efficiency and is a magnetic refrigeration material with excellent performance.

The present invention relates to the technical field of crystal synthesis, and discloses a method for synthesizing gadolinium gallium garnet single crystal, which comprises the following steps: S1. After uniformly mixing the raw materials, load them into a mold, and use a briquetting machine to initially briquette the raw material powder into a block and then demold; S2. Put the briquetted raw material block into a muffle furnace for pre-sintering and cool it with the furnace; S3. Crush the cooled polycrystalline raw material, use die pressing to form it again, put it into the muffle furnace for sintering, repeat 1 to 3 times, cool it and then load it into a crucible, and vibrate the crucible to make the polycrystalline raw material uniformly filled; S4. Put the crucible containing the polycrystalline raw material into the guide rail of a horizontal crystal growth furnace, evacuate and then fill it with an inert gas, and control the crucible to sequentially pass through the melting zone, crystal growth zone and cooling zone of the furnace tube of the horizontal crystal growth furnace to complete crystal growth. The present invention uses the horizontal method to grow gadolinium gallium garnet single crystal, which can achieve continuous growth, and the obtained crystal has a high utilization rate and uniform stress.

The invention discloses a stripline resonator structure and a magnetic tuning trap composed of the resonator structure, belonging to the technical field of electronic components; the stripline resonator structure consists of a stripline central conductor, a stripline outer conductor, a gadolinium gallium garnet crystal and a YIG single crystal film, wherein the stripline central conductor, the YIG single crystal film and the gadolinium gallium garnet crystal are arranged in sequence in the stripline outer conductor; the invention realizes the planarization of the resonator of the magnetic tuning trap, simplifies the design of the stripline resonant circuit structure; adopts the stripline transmission mode, expands the passband operating frequency of the magnetic tuning trap; multiple stripline resonant circuits can be arranged on the same plane, which is easy to integrate multi-channel traps; the resonant circuit adopts multiple single crystal film blocks to form a resonator cascade, effectively suppresses multiple excitation modes of the single crystal film, increases the stopband depth of the trap, and improves the performance of the trap.

A method for recovering gallium and gadolinium from a gadolinium gallium garnet waste material comprises the following steps: crushing and screening the gadolinium gallium garnet waste material to obtain gadolinium gallium garnet waste material particles; uniformly mixing the gadolinium gallium garnet waste particles with alkali and an oxidizing agent, putting the mixture into a crucible, and calcining to form alkali-fused slag; cooling the slag to room temperature, soaking the slag together with the crucible in a container filled with water, completely stripping the slag on the crucible into the water for water soaking, moving away the crucible, and heating and stirring; leaching the slag subjected to alkali fusion with water, and washing with filtered water to obtain water leaching slag and water leaching liquid; putting the water leaching residues into a container, adding water and acid, heating and stirring; after pickling the water leaching residues, filtering and washing to obtain pickling residues and a pickling solution; pouring the pickling solution into a container, adding an alkaline solution to adjust the pH value, and filtering to obtain gallium deposition slag and a gallium deposition post-solution; placing the gallium deposition slag in a container, adding alkali and water, heating and stirring; after alkaline leaching of the gallium precipitation slag, washing with filtered water to obtain alkaline leaching slag and alkaline leaching liquid; electrolyzing the water leaching solution and the alkaline leaching solution; placing the gallium-deposited solution in a container, adding an alkali solution to adjust the pH value, and stirring to react; and filtering to obtain liquid after gadolinium precipitation and gadolinium hydroxide.

The invention discloses lutetium-gadolinium-gallium garnet-based broadband near-infrared fluorescent powder with ultrahigh luminescence thermal stability, which is Cr < 3 + > doped Lu2GdGa5O12 near-infrared fluorescent powder, the chemical composition of the fluorescent powder is Lu2GdGa5O12: xCr < 3 + >, x is the concentration of doped Cr < 3 + >, x is more than 0 and less than or equal to 1, the fluorescent powder can be excited by 250-320 nm ultraviolet light, 360-530 nm blue-green light and 550-700 nm red light, the emission peak covers 600-850 nm, and the emission peak is more than 0 and less than or equal to 1. According to the present invention, the blue-light-emitting near-infrared light conversion material has characteristics of high light emitting intensity, excellent light emitting thermal stability, simple synthesis and the like, can be used in the fields of high-power near-infrared LED devices, plant illumination and the like, and can be used as the near-infrared light conversion material excited by the blue-light LED chip, and the blue-light-emitting near-infrared light conversion material has characteristics of high light emitting intensity, excellent light emitting thermal stability and the like.

The application relates to a heterojunction showing abnormal Hall effect at low temperature and a preparation method thereof, in particular to the following steps: taking a gadolinium gallium garnet substrate as a base, after the substrate is treated through cleaning and the like, the substrate is placed in a vacuum system, and through steps of heating annealing and degassing, a Tm3Fe5O 12 thin film is grown on the substrate by using pulse laser deposition; and the grown thin film is taken as a base and is placed into a molecular beam epitaxy device, and a SnTe thin film with a certain thickness is grown on the base by using a molecular beam epitaxy technology. By using the method, a high-quality thin film material with abnormal Hall effect under specific temperature conditions can be obtained, the thin film material can show abnormal Hall effect at a temperature below 20K, and the temperature has a regulating effect on the signal size of the abnormal Hall effect.

The invention relates to the field of thin film materials and discloses a method for preparing a rare earth doped yttrium iron garnet thin film by using liquid phase epitaxy. The method comprises the following steps: weighing Gd2O3, Ga2O3, Fe2O3, Bi2O3 and a flux, putting them into a platinum crucible to melt and obtain a melt; cleaning a substrate; placing the cleaned substrate into a melt which has been cooled and is in a supersaturated metastable state, and growing a thin film by using a liquid phase epitaxy method, wherein the growth temperature is 700-900 DEG C, the substrate rotation speed is 30-80 rpm, the growth time is 5-10 hours, and after the growth is completed, cleaning and removing the residue. The invention adopts a lead-free liquid phase epitaxy process, uses calcium magnesium zirconium doped gadolinium gallium garnet as a substrate, uses B2O3, Bi2O3 and V2O5 as fluxes, adopts a suitable oxide ratio, and controls the growth temperature, substrate rotation speed and growth time to prepare the thin film.