Growth method of neodymium-doped gadolinium gallium garnet laser crystal
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
- Publication Date
- 2005-06-01
- Estimated Expiration
- Not applicable · inactive patent
Abstract
Description
technical field
[0001] The present invention relates to doped neodymium gadolinium gallium garnet (Nd 3+ :Gd 3 Ga 5 o 12 Laser crystal, hereinafter referred to as: Nd:GGG, especially a growth method of neodymium-doped gadolinium-gallium garnet laser crystal. Background technique
[0002] High-power solid-state lasers have a series of strict requirements for laser crystals: large absorption and emission cross-sections, small Stokes shift, long fluorescence lifetime, high thermodynamic properties, and the ability to grow into large-sized crystals with high optical quality. The main problem faced by high-power solid-state lasers is thermal damage during the pumping process. Even with diode pumping, a significant portion of the heat is absorbed by the laser medium, causing thermal lensing, mechanical stress, and other effects.
[0003] Nd:GGG is easy to grow under a flat solid-liquid interface, there are no other impurities and stress centers, the entire cross-section can b...