Production method of pattern underlay for epitaxial growth of high-crystal quality nitride

A technology of epitaxial growth and crystal quality, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., which can solve the problems of complex process, high cost, and pattern limitation.

Inactive Publication Date: 2008-10-29
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the complexity and high cost of the process, and the graphics are limited by the lithography layout, it is more and more important to develop low-cost, easy-to-implement patterned substrate technology.

Method used

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  • Production method of pattern underlay for epitaxial growth of high-crystal quality nitride
  • Production method of pattern underlay for epitaxial growth of high-crystal quality nitride
  • Production method of pattern underlay for epitaxial growth of high-crystal quality nitride

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preparation example Construction

[0021] see Figure 1 to Figure 4 , the present invention is a kind of preparation method of pattern substrate used for epitaxial growth of high crystal quality nitride, comprising the following steps:

[0022] Step 1: Deposit a thin layer of metal 2 on the substrate 1 (such as figure 1 ); the substrate 1 is a patterned substrate for nitride epitaxial growth; the patterned substrate for nitride epitaxial growth is sapphire, silicon, silicon carbide, gallium arsenide, zinc oxide, self-supporting Any one of gallium nitride; the patterned substrate for nitride epitaxial growth is any one of c-plane (0001), m-plane (1010), r-plane (1102) or a-plane (1120) The effect of the substrate 1 is to etch out the pattern and grow high-quality nitride thereon; the thin metal layer 2 is any one of Ni, Ti, Au or Al; the The thickness of the thin metal layer 2 is 5nm to 30nm; the function of the thin metal layer 2 is to make a mask layer after annealing.

[0023] Step 2: Carry out annealing t...

Embodiment

[0028] This embodiment is a method for fabricating a patterned c-plane or (0001) sapphire substrate for nitride epitaxial growth. The c-plane sapphire substrate is one of the most commonly used substrate materials for epitaxial nitride growth.

[0029] First deposit 15nm metallic nickel (Ni) on a 2-inch c-plane sapphire substrate. figure 1 shown, then at N 2 Under air flow, annealing was carried out at 800°C for 5 minutes. The schematic diagram of the structure section is shown in figure 2 shown;

[0030] Then use Ni as a pattern mask, use ICP equipment to dry etch the substrate for 60 seconds, and transfer the mask pattern to the sapphire substrate. The structure profile is as follows image 3 shown;

[0031] Then use hot HNO3 to corrode the substrate for 10 minutes, remove Ni on the sapphire substrate, and clean the sapphire substrate to make a patterned sapphire substrate, the structure profile is as follows Figure 4 shown;

[0032] Figure 5 It is the surface topo...

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Abstract

The invention relates to a preparation method for a graph underlay used for the epitaxial growth of a nitride with high crystal quality, which is characterized by including the steps of: step 1: depositing a layer of thin metal layer on the underlay; step 2: carrying out annealing treatment to lead the thin metal layer to form the amorphous graph of a metal mask with a micron dimension by self organizing; step 3: carrying out dry etching to transfer the graph of the metal mask to the underlay; step 4: removing the residual metal mask by adopting a method for wet corrosion and washing the underlay to prepare and finish the graph underlay.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for preparing a pattern substrate used for epitaxial growth of high crystal quality nitride. The pattern substrate can be used for epitaxial growth of nitride with low dislocation density and high crystal quality. Background technique [0002] Wide bandgap nitride compound semiconductors represented by III-V gallium nitride (GaN) (such as GaN, InN, AlN, AlGaN, InGaN, AlInN or AlInGaN, etc.) are used in ultraviolet / blue / green light-emitting diodes, lasers, Sunlight-blind ultraviolet photodetectors and high-frequency, high-temperature, high-power electronic devices have important and extensive applications. Nitride is mainly heteroepitaxially grown on sapphire, silicon, silicon carbide, zinc oxide, gallium arsenide substrates or homoepitaxially grown on free-standing gallium nitride substrates. There is a large lattice constant mismatch and thermal expansion coeff...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
Inventor 张扬闫发旺高海永曾一平王国宏张会肖李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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