36 results about "Lattice deformation" patented technology

A system and method for computer-aided engineering analysis using direct mesh manipulation of a mesh model is provided. The system includes a computer system having a memory, a processor, a user input device and a display device. The method includes the steps of selecting a geometric model in a computer-aided design (CAD) format, converting the CAD model into a mesh model and evaluating the mesh model using a computer-aided engineering (CAE) analysis. The method also includes the steps of modifying a surface of the mesh model by varying a predetermined parameter using direct surface manipulation (DSM), updating the mesh model and using the updated mesh model in further CAE analysis. Three techniques are provided for modifying a surface feature, including using a Dirichlet parameter distribution to determine the displacement of the surface feature; modeling the surface feature as an elastic sheet to determine deformation; and enclosing the feature within a lattice structure and using lattice deformation to determine surface deformation.

A system and method for computer-aided engineering analysis using direct mesh manipulation of a mesh model is provided. The system includes a computer system having a memory, a processor, a user input device and a display device. The method includes the steps of selecting a geometric model in a computer-aided design (CAD) format, converting the CAD model into a mesh model and evaluating the mesh model using a computer-aided engineering (CAE) analysis. The method also includes the steps of modifying a surface of the mesh model by varying a predetermined parameter using direct surface manipulation (DSM), updating the mesh model and using the updated mesh model in further CAE analysis. Three techniques are provided for modifying a surface feature, including using a Dirichlet parameter distribution to determine the displacement of the surface feature; modeling the surface feature as an elastic sheet to determine deformation; and enclosing the feature within a lattice structure and using lattice deformation to determine surface deformation.

A semiconductor device includes a semiconductor substrate having a first conductivity type, a plurality of pillars extending to a direction perpendicular to a surface of the semiconductor substrate, a stress providing layer formed in the semiconductor substrate between pillars and forming a junction with the semiconductor substrate below each pillar to cause lattice deformation in the pillar, a source region having a second conductivity type opposite to the first conductivity type formed in the semiconductor substrate below the pillar, a drain region having the second conductivity type formed in an upper portion of the pillar, a gate insulating layer formed on a lateral surface of the pillar and a surface of the stress providing layer, and a gate electrode formed to surround the lateral surface of the pillar.

The invention discloses a water chilling ingot furnace and an ingot casting process thereof. A water cooling disc (13) is arranged at the lower end of a heat exchange table (11), located at the lower end of a bottom heater (7), internally provided with a flow cavity and provided with a water inlet (9) and a water outlet (10), wherein the water inlet (9) and the water outlet (10) are communicated through the flow cavity, and are respectively communicated with the outer end of a furnace body (1). The water chilling ingot furnace disclosed by the invention has the beneficial effects that the problem of influence on formation of columnar crystals due to transfer of heat of a crucible in a radial direction caused by lifting an insulating cage to dissipate heat from a side is solved by way of replacing the original mode of lifting the insulating cage to dissipate heat by water cooling; an insulating cage body in a lifting process is prevented from rubbing with the top of the insulating cage to generate carbon dust which is easy to enter the crucible to increase carbon impurity content of a silicon ingot so as to cause lattice deformation.

The invention discloses quenching oil for a gear shift connection rod. The quenching oil is prepared from the following raw materials in parts by weight: 65-75 parts of 150N Group II base oil, 2-5 parts of high molecular weight succinimide, 10-15 parts of palm wax, 35-40 parts of refined paraffin base mineral oil, 2-3 parts of sulfide base phenol, 2-3 parts of dimethylmethane petroleum asphalt resin, 4-5 parts of epoxidation castor oil, 1-2 parts of alkylene polyether and 3-8 parts of modified antioxygen. By adopting the quenching oil, the internal crystalline phase density of metal can be reinforced, and lattice deformation torsion resistance is improved, so that metal strength is obviously improved; the tensile property and tangential stress resistance of the manufactured gear shift connection rod are greatly improved; and the service life of the connection rod is greatly prolonged.

The invention discloses an oxide-based high-entropy alloy ceramic binding agent special for PCBN. The binding agent is composed of, by mass, 30-65% of high-entropy alloy and 35-70% of oxide ceramic. The high-entropy alloy in the binding agent can form a high-mixing-entropy stable solid solution, multiple types of special effects are generated, such as a high-entropy effect on thermodynamics, a lattice deformation effect in structure, a synergistic effect among multiple components and a 'cocktail' effect in performance. Therefore, compared with traditional alloy, the high-entropy alloy can achieve homogenization and alloying more easily, the alloy melting point is lower, and excellent performance, such as high strength, high hardness, high abrasion resistance, high electric resistance, high thermal resistance and corrosion resistance, to which the traditional alloy is inferior is achieved.

The invention discloses a compound semiconductor material doped with rare-earth elements, which is a crystal material being composed of III group elements and V group elements and doped with the rare-earth elements. The crystal material further comprises displacement adulterant which is an III group element or the combination of a plurality of III group elements, the atomic numbers of the III group elements contained in the displacement adulterant are smaller than those of the III group elements forming the crystal material, and the displacement adulterant substitutes original III group elements in crystal to form a displacement defect. The invention also provides a preparation method of the material. The invention has the advantages that the displacement defect is formed by doping elements with smaller atomic numbers in the material so as to improve the lattice deformation of the semiconductor material caused by doping the rare-earth element, thus improving the luminous efficiency of the material.

The Nd doped gadolinium gallium garnet laser (Nd:GGG) crystal has the material including gadolinium oxide, gallium oxide, neodymium oxide and cerium oxide in certain proportion prepared in two-step composing process. The Nd doped gadolinium gallium garnet laser crystal is grown in a Czochrolski process under the 98 % N2+2% O2 condition. The present invention solves the problem of doping Nd2O3 to cause lattice deformation, and the Nd:GGG crystal has raised radiation resistance and improved spectral and laser performance.

A lattice distortion may be achieved by incorporating a hydrogen species into a semiconductor material, such as silicon, without destroying the lattice structure. For example, by incorporating the hydrogen species on the basis of an electron shower, a tensile strain component may be obtained in the channel of N-channel transistors.

A semiconductor device includes a semiconductor substrate having a first conductivity type, a plurality of pillars extending to a direction perpendicular to a surface of the semiconductor substrate, a stress providing layer formed in the semiconductor substrate between pillars and forming a junction with the semiconductor substrate below each pillar to cause lattice deformation in the pillar, a source region having a second conductivity type opposite to the first conductivity type formed in the semiconductor substrate below the pillar, a drain region having the second conductivity type formed in an upper portion of the pillar, a gate insulating layer formed on a lateral surface of the pillar and a surface of the stress providing layer, and a gate electrode formed to surround the lateral surface of the pillar.

The invention discloses a device and method for testing performance degradation caused by transistor lattice deformation. The device for testing the performance degradation caused by the transistor lattice deformation comprises a base, a precise displacement platform, a cushion block, a carrier and a pressing block. The method for testing the performance degradation caused by the transistor lattice deformation comprises the following steps of (1) thinning a chip; (2) cutting the chip; (3) sticking the chip; (4) leading an electrode out of a transistor; (5) fixing the carrier; (6) testing the transistor before applying the stress; (7) applying the mechanical stress onto the chip; (8) testing the transistor under the stress; (9) judging whether the performance of the transistor degrades; and (10) obtaining the lattice deformation value when the performance of the transistor degrades. The device and method for testing the performance degradation caused by the transistor lattice deformation has the advantages of easily applying compression stress onto the chip, and being large in range of the applicable mechanical stress, good in chip bend uniform, simple and accurate in lattice tension amount calculation, and is suitable for analyzing the influence of the transistor lattice deformation on the performance of the transistor.

The invention discloses a flash memory manufacturing method, which comprises the steps of providing a front-end structure, wherein the front-end structure is provided with an active region and an isolation structure; and performing annealing on the front-end structure, wherein the annealing temperature is 1050-1200 DEG C, and the annealing time is 10-50 minutes. According to the invention, annealing processing is performed on the front-end structure which is provided with the active region and the isolation structure, and the stress generated by crystal lattice deformation of the active regioncaused by groove etching or filling in the process of forming the isolation structure is released. Meanwhile, the split level of crystal lattices is reduced, crystal lattice defects of the active region are repaired, leakage current caused by the crystal lattice defects of the active region is reduced, and the electrical performance and the product yield of a flash memory are improved.

The invention discloses a multi-principal element alloy containing trace B and a method for surface treatment of a titanium alloy. The multi-principal element alloy comprises, by mole, 23-30 parts of Al, 23-30 parts of Si, 23-30 parts of Cu, 1-5 parts of Ti, 21-30 parts of Zr and 1-4 parts of B. According to the method, a titanium alloy base material is cleaned and subjected to sand blasting roughening treatment, then plasma spraying equipment is used for spraying multi-principal element alloy powder on the surface of the titanium alloy base material, finally the plasma-sprayed surface is subjected to remelting treatment through a CO2 laser device, and a coating is obtained. The prepared multi-principal element alloy coating adopts characteristics of high-entropy effect, slow diffusion effect, nanophase reinforcement, super-high lattice deformation, cocktail effect and the like of the multi-principal element alloy, abrasion resistance and high temperature oxidation resistance of the titanium alloy are remarkably improved, and titanium fire can be prevented.

A control method for core lattice deformation in the honeycomb core bending process comprises the steps that bending tests are conducted on honeycomb cores with different thicknesses under different bending radiuses, the inner surfaces of the honeycomb cores are deformed and collapsed in the bending state, and the number of the deformed and collapsed core lattices on the inner surfaces of the honeycomb cores is counted; measuring and counting the collapse quantity and deformation quantity of the honeycomb cores with different thicknesses under different bending radiuses, and determining the slotting spacing of the honeycomb cores with different thicknesses under different bending radiuses according to the deformation requirement of the honeycomb core bending process on the premise of ensuring that the core grids do not collapse in the honeycomb core bending process; the collapsing quantity and the deformation quantity of the core grids are compensated through the slotting spacing; on the premise of determining the grooving distances of the honeycombs with different thicknesses under different bending radiuses, the grooving angle is further determined.

The invention discloses a multi-principal element alloy and a method for surface treatment of a titanium alloy. The multi-principal element alloy comprises, by mole, 18-30 parts of Zr, 18-30 parts of Ni, 18-30 parts of Si, 18-30 parts of Ta, 1-10 parts of Ti and 2-5 parts of CeO2. According to the method, a titanium alloy base material is cleaned and subjected to sand blasting roughening treatment, then plasma spraying equipment is used for spraying multi-principal element alloy powder on the surface of the titanium alloy base material, finally the plasma-sprayed surface is subjected to remelting treatment through a CO2 laser device, and a coating is obtained. The prepared multi-principal element alloy coating adopts characteristics of high-entropy effect, slow diffusion effect, nanophase reinforcement, super-high lattice deformation, cocktail effect and the like of the multi-principal element alloy, abrasion resistance and high temperature oxidation resistance of the titanium alloy can be remarkably improved, and titanium fire can be prevented.

The invention discloses a method of growing GaN-based luminescent crystalline membrane for molecular beam epitaxy, which dopes rare earth ions in the growth process to replace part of lattice site of Ga3+ and is characterized by comprising the following steps: doping III group element boron or aluminum in the raw material formula of the GaN crystalline membrane according to a certain ratio, wherein the III group element boron or aluminum enters into GaN lattice site via a mode of trivalent ion in the growth process; preparing ion radius difference between the rare earth ion and the Ga3+, wherein the molar ratio of the raw material formula is as follows: Ga:Re:A=(1-x-y):x:y, x represents rare earth metal, A represents III group element boron or aluminum, x is more than or equal to 0.1% andless than or equal to 10.0%, and y is more than or equal to 0.1x and less than or equal to x. In the invention, III group element boron or aluminum is doped with rare earth metal together according to a certain ratio so as to greatly improve lattice deformation of the GaN crystalline membrane caused by larger radius mismatch of Re3+ and Ga3+, and increase luminescent performance of the GaN crystalline membrane.

The Nd doped gadolinium gallium garnet laser (Nd:GGG) crystal has the material including gadolinium oxide, gallium oxide, neodymium oxide and cerium oxide in certain proportion prepared in two-step composing process. The Nd doped gadolinium gallium garnet laser crystal is grown in a Czochrolski process under the 98 % N2+2% O2 condition. The present invention solves the problem of doping Nd2O3 to cause lattice deformation, and the Nd:GGG crystal has raised radiation resistance and improved spectral and laser performance.

The invention discloses a lanthanide metal catalyst. The lanthanide metal catalyst comprises, by weight, 3-20 parts of La, 4-8 parts of Ce, 1-6 parts of Yb, 0-5 parts of Gd, 0-3 parts of Lu, 0-3 parts of Lu, and 0-3 parts of Tb, and all of the components are integrally melted in vacuum to form the lanthanide metal catalyst. The lanthanide metal catalyst acts on a target material, and is fused with a matrix of the target material, atoms of the lanthanide metal in the catalyst enter into crystal lattices of matrix of the target material, so that larger crystal lattice deformation is caused, distortion energy is generated, and system energy is increased; the rare earth atoms can only be enriched at high-energy crystal boundaries so that at the lowest free energy of the system is kept, thus, the conductivity of the target material is increased, the resistance value of the target material is reduced, the adhesion of the target material is enhanced; and more than 0.1WT% of the lanthanide metal catalyst is added to an ITO target material and a copper silver alloy target material, and the conductivity of the target material can be increased by 10-15%.

The invention provides a flowing atmosphere hot / cold impact sintering resistance furnace which is designed for inherent defects of an existing resistance sintering furnace and the requirement for a special sintering technology of research and development of new inorganic materials. The flowing atmosphere hot / cold impact sintering resistance furnace comprises a furnace shell and hearth, a heating body, a ventilation crucible, a ventilation objective table, a hollow ventilation supporting rod, a hollow exhaust rod, a sample supporting frame, a microcomputer time switch and an electrically-controlled ventilation switch. The microcomputer time switch controls the electrically-controlled ventilation switch to be switched on so that air can flow into a sample to be sintered on the sample supporting frame of the ventilation objective table in the ventilation crucible, the sintering temperature of the sample to be sintered is lowered, the sintering temperature of the sample to be sintered is made to fluctuate from 5 DEG C to 100 DEG C periodically, and the periodical cold / hot impact function is generated for the sample to be sintered. The flowing atmosphere hot / cold impact sintering resistance furnace has the advantages that crystalline grains of the sintered sample can be made to grow coordinately in the sintering process, the crystalline grains are even in size, the phase is stably and evenly distributed, the density is high, the porosity is low, lattice deformation is lowered, and performance is better.