43results about How to "Improve lattice distortion" patented technology

The invention discloses high-entropy alloy powder for laser cladding and a preparation method of a cladding layer. The high-entropy alloy powder comprises Ti, Zr, V, Nb, Ta and Mo. In addition, high-entropy alloy powder which comprises Ti, Zr, V, Nb, Ta, Mo and W, high-entropy alloy powder which comprises Ti, Zr, V, Nb, Ta, Mo, W and Cr and the preparation method of the cladding layer of the high-entropy alloy powder for laser cladding are provided. The high-entropy alloy powder mainly comprises two characteristics, namely, the high-entropy effect and the cocktail effect, each kind of powder exerts respective advantages, and therefore the cladding layer with high hardness, high corrosion resistance, excellent tempering softening resisting performance and excellent structure performance is obtained. Metallurgical bonding is formed by an alloy layer and a matrix through laser cladding; the bonding strength of the cladding layer and the matrix is greatly improved, and the heating speed is high; metal of the cladding layer is not prone to being diluted by the matrix; little heat deformation is generated; and therefore the part rejection rate is low.

The invention discloses high-entropy ceramic powder used for a thermal barrier coating. The ceramic powder is characterized by having a pyrochlore structure and a chemical formula of RE2Zr2O7, wherein RE is any 3-7 different metal elements selected from rare earth elements including Y, La, Pr, Nd, Sm, Eu and Gd, and the percentage of one mole number of each RE element to the total mole number of all RE elements is 5%-35%. The preparation method comprises the following steps: mixing RE2O3 powder and ZrO2 powder, and heating the mixed powder under the heating condition of 1000-1700 DEG C for 1-10 h in an air atmosphere to obtain the high-entropy ceramic powder. According to the method provided by the invention, the high-entropy ceramic powder prepared by the method enriches a system of a thermal barrier coating material, has the advantages of low costs, simple and easy operation, a wide application range and the like, and is expected to be used in the field of thermal barrier coatings.

The invention provides a shift register which can operate normally while suppressing a delay of signal and a rounding of waveform. The shift register of the invention includes a plurality of stages of flip-flop circuits each of which includes a clocked inverter. The clocked inverter includes a first transistor and a second transistor which are connected in series, a first compensation circuit including a third transistor and a fourth transistor which are connected in series, and a second compensation circuit including a fifth transistor and a transmission gate. According to the first compensation circuit, a timing at which a signal outputted from the flip-flop circuit rises or falls can be controlled in synchronization with an output of two stages before. The second compensation circuit can control a clock signal input can be controlled.

The invention provides a semiconductor display device with less generation of a pseudo contour while the drive frequency of a driver circuit is suppressed. Furthermore, the invention provides a semiconductor display device with less generation of a pseudo contour while the decrease in image quality is suppressed. A semiconductor display device comprises a table storing data for determining a relationship between the gray scale level of a video signal and a subframe period for light emission in the plurality of subframe periods, a controller for changing a video signal in accordance with the data and outputting, and a panel whose pixel gray scale level is controlled in accordance with the outputted video signal. The number and the length of the plural subframe periods for each gray scale level of 2 or more are determined in accordance with a subframe ratio R_SF which is calculated in accordance with a sharing ratio R_sh determined by the frame frequency.

The invention provides a reverse osmosis compound scale inhibitor and belongs to the field of reverse osmosis water treatment. The scale inhibitor comprises the following components in percentage by weight: 10 to 20 percent of 1-hydroxyethylidene-1,1-diphosphonic acid, 30 to 40 percent of hydrolytic polymaleic anhydride, 30 to 40 percent of polyacrylic acid and 10 to 20 percent of sulfonated styrene-maleic anhydride copolymer, and the scale inhibitor comprises also comprises a bactericide. The reverse osmosis compound scale inhibitor fully utilizes the synergistic effect among organic phosphorous scale inhibitors, polycarboxylic acid scale inhibitors and sulfonic acid scale inhibitors, has good scale inhibition and dispersion performance; and when used in a reverse osmosis water inflow system, the scale inhibitor can effectively lighten pollution of calcium carbonate, calcium sulfate and silicate to reverse osmosis membranes and prolongs the cleaning period and service life of the reverse osmosis system.

The invention discloses a pretreatment method of refractory gold ore, which is characterized by comprising the following steps of: adopting a dry-wet two-level ball grinder activating and impregnation process; carrying out first-level dry grinding by adopting a vibratory ball grinder and efficiently improving the mineral activity on the basis of energy conservation through adjusting the content of quartz in a ball grinding sample; carrying out second-level wet grinding by adopting a stirred ball grinder, simultaneously carrying out the mineral grain size reduction and the acid addition and preimpregnation, further damaging a mineral structure, realizing the complete oxidation and decomposition of sulfide ore at a lower temperature and a pressure through controlling the content of sulfuricacid, the solid-to-liquid ratio and the oxygen partial pressure in a reaction vessel and restraining the generation of elemental sulfur. The pretreatment method has the advantages of low extraction temperature, short time and low energy consumption.

The invention discloses a method for preparing a gradient thermal barrier coating and the method is used for preparing the gradient thermal barrier coating on the surface of a metal. 40-80mu m ceramic particles are bound on the surface of a metal substrate by virtue of a thermal spraying or laser cladding method to prepare the nano-ceramic particle-reinforced thermal barrier coating, wherein the nano-ceramic particles are uniformly dispersed and have a particle size of 100-500nm, the 40-80mu m ceramic particles are obtained by agglomerating initial nanoparticles and comprise Al2O3 particles, ZrO2 particles and rare earth zirconate particles and the component of the rare earth zirconate particles is A2Zr2O7, wherein A is one or more of Ln, La, Gd and Nd. The gradient thermal barrier coating prepared by the method is good in thermal-insulation effect and is firmly bound with the metal substrate and the problems that the existing gradient thermal barrier coating is difficult to be successfully applied and is easy to fall off to cause failure under thermal cycling conditions are solved.

The present invention provides a thin film transistor that can be manufactured at lower cost and at higher yield by simplifying a manufacturing process, a manufacturing method thereof, and a manufacturing method of a display device using the thin film transistor. According to this invention, a pattern used in a pattering process is formed by using a droplet discharging method. The pattern is formed by selectively discharging a composition comprising an organic resin. By using the pattern, an electrically conductive material, an insulator or semiconductor constituting a semiconductor element, are patterned into a desired shape by a simple process.

The invention relates to a non-phosphorus corrosion and scale inhibitor suitable for medium-and-low-hardness and strong-corrosion water and application of the non-phosphorus corrosion and scale inhibitor. The non-phosphorus corrosion and scale inhibitor is prepared from the following ingredients by weight percent: 15-30% of an AMPS-containing terpolymer, 12-20% of hydrolyzed polymaleic acid, 0.1-10% of sodium gluconate, 15-40% of a fatty alcohol polyoxyalkylene alkyl ether-carboxyl-sulfopropionate copolymer, 0.1-3% of a pH regulator, 0.1-12% of zinc salt, 0.1-5.0% of benzotriazole, 0.5-5.0% of a water-soluble inert fluorescent tracer and 15-40% of deionized water. Compared with the prior art, the non-phosphorus corrosion and scale inhibitor provided by the invention solves the problem that a common non-phosphorus corrosion and scale inhibitor cannot draw the corrosion and scale inhibition function into consideration during concentration of a circulating water system. The non-phosphorus corrosion and scale inhibitor is favorable in performance and good in stability, has general applicability to medium-and-low-hardness and strong-corrosion water, and has the characteristics of no phosphorus, environmental friendliness and high efficiency.

The invention discloses a method of growing GaN-based luminescent crystalline membrane for molecular beam epitaxy, which dopes rare earth ions in the growth process to replace part of lattice site of Ga3+ and is characterized by comprising the following steps: doping III group element boron or aluminum in the raw material formula of the GaN crystalline membrane according to a certain ratio, wherein the III group element boron or aluminum enters into GaN lattice site via a mode of trivalent ion in the growth process; preparing ion radius difference between the rare earth ion and the Ga3+, wherein the molar ratio of the raw material formula is as follows: Ga:Re:A=(1-x-y):x:y, x represents rare earth metal, A represents III group element boron or aluminum, x is more than or equal to 0.1% and less than or equal to 10.0%, and y is more than or equal to 0.1x and less than or equal to x. In the invention, III group element boron or aluminum is doped with rare earth metal together according to a certain ratio so as to greatly improve lattice deformation of the GaN crystalline membrane caused by larger radius mismatch of Re3+ and Ga3+, and increase luminescent performance of the GaN crystalline membrane.

The invention discloses a preparation method for high-performance modified fluorgypsum. The preparation method comprises the following steps of: carrying out thermal treatment after grinding, smashing and screening fluorgypsum waste residue; then, adding calcium hydroxide, portland cement, carbide slag, oxalic acid, sodium gluconate, bone glue, phosphogypsum, semi-hydrated gypsum, bauxite, modified rice straw fiber, coal ash, redispersible latex powder, corn straw fiber, wheat straw fiber, polyvinyl alcohol and rosin milk, drying and smashing, wherein the modified rice straw fiber is modified by virtue of hydrogen peroxide and sodium hydroxide; the redispersible latex powder is formed as follows: adding methyl methacrylate and butyl acrylate into ammonium chloride, sodium persulfate and lauryl sodium sulfate to react to obtain initial emulsion; and adding sodium hydroxide into the initial emulsion for alkalization, then, adding polyvinyl alcohol, and spraying and drying to obtain the redispersible latex powder. The modified fluorgypsum obtained by the method is short in setting time, high in tensile strength and breaking strength after being hydrated, and capable of changing fluorgypsum into things of value.

The invention relates to a thermal processing method for rare earth nickel base AB5 type hydrogen storage alloy for the negative electrode of a nickel hydrogen cell. A staged thermal processing method using low-temperature treatment before high-temperature treatment is adopted for the rare earth nickel base AB5 type hydrogen storage alloy in the inert or reducing atmosphere after smelting and casing the rare earth nickel base AB5 type hydrogen storage alloy into ingots. The staged thermal processing method comprises the following steps: firstly keeping the rare earth nickel base AB5 type hydrogen storage alloy within the temperature range of 400 to 800 DEG C for 2 to 5 hours; and then increasing the temperature to 950 to 1100 DEG C and keeping the rare earth nickel base AB5 type hydrogen storage alloy for 0.3 to 5 hours. The staged thermal processing of the rare earth nickel base AB5 type hydrogen storage alloy can remove and improve the component segregation, the lattice stress and the lattice distortion of the hydrogen storage alloy without the merging and growing of the crystal grains of the alloy, thereby improving the anti-atomization capability of the alloy, improving the gradient of the P-C-T curve of the hydrogen storage alloy, reducing the platform pressure, improving the hydrogen absorption and desorption amount, the electrochemical content and the cycle life of the alloy, and consequently truly improving the electrochemical performance and the cycle life of the cell.

The invention provides a preparation method for a rare earth element dopped gallium nitride powder material, including the following steps: filling a gallium-containing raw material at bottom of an apparatus to cover magnetons at bottom of the apparatus; letting in nitrogen or inert gas from an airflow inlet to purge a reaction chamber and keeping airflow; rising a temperature in the reaction chamber to a first temperature by utilizing a furnace body and starting a magnetic stirring apparatus; rising the temperature continually in the reaction chamber to a second temperature by utilizing the furnace body and switching the gas in the airflow inlet to ammonia gas; rising the temperature continually in the reaction chamber to a third temperature by utilizing the furnace body and keeping the third temperature; closing the magnetic stirring apparatus and cooling the reaction chamber rapidly by utilizing the furnace body. The invention also provides an apparatus, comprising a reaction chamber, which includes magnetons at bottom of the apparatus and a magnetic stirring apparatus at external bottom of the apparatus. The magnetic stirring apparatus is opposite to the magnetons at position and used for cooperating with the magnetons in stirring material in the reaction chamber.

A doped Ce yttrium aluminic acid crystal growing method characterizes in doping CeO2 and Lu2O3 in the raw material formula at the same time and is determined by the following formula: Al2O3+(1-X-Y) Y2O3+2XCeO2+YLu2O3=2Y1-x-y Cex Luy AlO3 + x/2O2, in which X is greater or equal to 0.1% but less than or equal to 2.0%, y is greater than or equal to x but less than or equal to 3x. The crystal is grown in an IF inducing furnace with a pulling method. The dislocation density is reduced to 100-10000/sq.cm, its scintillation output performance increases 5%-10%.

The invention relates to a method for increasing work functions of thin transparent conductive oxide films. According to the method, the thin transparent conductive oxide films are prepared with a physical vapor deposition method, during preparation of the thin films, substrates are heated, and heating temperatures are secondary crystallization temperatures of the thin transparent conductive oxidefilms. According to the method, the technology is simple, all that is required is to heat the substrates in situ in the deposition processes of the thin films, other surface treatments are not required to be performed on the thin films or the substrates, the modulation amplitude of the work functions of the thin films is large, and the method is not only applicable to one kind of thin transparentconductive oxide films.

The invention relates to a rare-earth doped GaN luminescent powder and preparation method thereof. The chemical formula of the luminescent powder is Ga(1-x-y)RexAyn, wherein Re refers to one of Ce<3+>, Pr<3+>, Nd<3+>, Pm<3+>, Sm<3+>, Eu<3+>, Gd<3+>, Tb<3+>, Dy<3+>, Ho<3+>, Er<3+>, Tm<3+> and Yb<3+>, and A refers to B<3+> or Al<3+>, x refers to the content of Re, y refers to the content of B<3+> or Al<3+>, x is greater than or equal to 0.1% and less than or equal to 10.0%, and y is greater than or equal to 0.1x and less than or equal to x. After raw materials are mixed, the obtained mixture is subjected to thermal insulation in a vacuum quartz tube at a temperature of 500-1000 DEG C for 8-16h; and after the obtained mixture is ground, the ground mixture is subjected to thermal insulation in an ammonia gas atmosphere in a temperature of environment of 1000-1150 DEG C 10-20h, thereby obtaining the luminescent powder material. According to the invention, lattice distortion caused by the radius mismatching between Re<3+> and Ga<3+> is improved, and the luminescent property of GaN powder material is effectively increased.

The invention discloses rare earth element doped fluorescent powder and a preparation method thereof. The rare earth element doped fluorescent powder comprises polycrystal powder formed by rare earth element doped III group nitride, wherein the III group nitride consists of nitrogen atoms and an III group element; the polycrystal powder further comprises a substitutional dopant which is one III group element or the combination of a plurality of III group elements; the atomic number of a substitutional element is less than that of the III group element forming the polycrystal powder; and the substitutional dopant replaces the traditional III group element in the polycrystal powder to form the substitutional defect. The invention further provides a preparation method of the fluorescent powder. The invention has the advantages that: the lattice distorsion of the polycrystal powder, caused by the mismatching of the larger atom radius, between the III group element and rare earth element is improved by introducing the substitutional dopant to replace the traditional III group element in the polycrystal powder to form the substitutional defect, thereby improving the luminous performance of the powder.