44results about How to "Improve lattice distortion" patented technology

The invention provides a semiconductor display device with less generation of a pseudo contour while the drive frequency of a driver circuit is suppressed. Furthermore, the invention provides a semiconductor display device with less generation of a pseudo contour while the decrease in image quality is suppressed. A semiconductor display device comprises a table storing data for determining a relationship between the gray scale level of a video signal and a subframe period for light emission in the plurality of subframe periods, a controller for changing a video signal in accordance with the data and outputting, and a panel whose pixel gray scale level is controlled in accordance with the outputted video signal. The number and the length of the plural subframe periods for each gray scale level of 2 or more are determined in accordance with a subframe ratio RSF which is calculated in accordance with a sharing ratio Rsh determined by the frame frequency.

The invention discloses a method for growing a GaN-based luminous crystal film by metal organic chemical vapor deposition. The method is characterized in that: trimethylborine or trimethylaluminium are doped in a raw material formula of the GaN crystal film in proportion, and boron or aluminum enter a GaN crystal lattice in a mode of trivalent ion in a growing process to regulate the ionic radiusdifference between rare-earth ions and Ga3+; the molar ratio of the raw material formula is that: Ga (CH3)3 to rare-earth organic complex to A(CH3)3 is (1-x-y):x:y, wherein the rare-earth organic complex is Re(TMHD)3 or Re (i-PrCp)3 taking rare-earth element Re as a core; A represents III group element boron or aluminum; x is more than or equal to 0.1 percent and less than or equal to 10.0 percent; and y is more than or equal to 0.1 time of the x and less than or equal to x. Because the organic complex of the III group element boron or aluminum and the rare-earth organic complex are co-doped in a certain proportion, the method can improve lattice distortion of the GaN crystal film caused by larger radius mismatch between Re3+ and Ga3+ to a large extent so as to improve the luminous performance of the GaN crystal film.

The invention relates to a thermal barrier material for aerospace with low thermal conductivity and high fracture toughness. The composition of the material in terms of atomic ratio is (ZrO 2 )a(CeO 2 )b(HfO 2 )c(Y 2 o 3 )d(A 2 o 3 )e, corresponding to (Zr a Ce b f c Y 2d A 2e )O f , where A is Sm or Nd, a=0.75~1.25, b=0.75~1.25, c=0.75~1.25, d+e=0.75~1.25, d and e are near equiatomic ratios, f=2(a+b +c)+3(d+e). The invention also discloses a preparation method of the thermal barrier material. While ensuring high lattice distortion solid solution, the invention reduces grain size and promotes the formation of nano-precipitated phase, so as to realize the improvement of fracture toughness and the reduction of thermal conductivity.