Method for increasing work functions of thin transparent conductive oxide films

An oxide film, transparent conductive technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve problems such as work function decline, film surface etching, insufficient stability, etc., to achieve simple process, improved The effect of work function

Inactive Publication Date: 2019-02-22
WUYI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The interface modification of the TCO film by acid treatment has a limited increase in the value of the work function of the film, and the most fatal problem is that the surface of the film will be etched after pickling; the work function of the TCO film is improved by plasma treatment, although on the surface The work function of the film is improved in a short period of time after treatment, but with the increase of the exposure time in the atmosphere, the work function drops sharply, and other improved properties also have certain aging effects
Therefore, the current methods for improving the work function of thin films have certain limitations and are not stable enough.

Method used

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  • Method for increasing work functions of thin transparent conductive oxide films
  • Method for increasing work functions of thin transparent conductive oxide films
  • Method for increasing work functions of thin transparent conductive oxide films

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] In this example, ITO (In 0.9 sn 0.1 O) thin film, concrete process comprises the following steps:

[0034] (1) Use acetone, ethanol, and deionized water to perform ultrasonic cleaning on the silicon wafer substrate for 20 minutes each;

[0035] (2) Control the temperature of the oven at 70°C, and dry the substrate for 1 hour;

[0036] (3) Put the dried substrate into the magnetron sputtering chamber, and vacuum the chamber to 6×10 -4 Pa, the distance between the target and the substrate is set to the maximum value that the equipment can achieve, which is 12cm;

[0037] (4) Feed 30 sccm argon gas, control the bias power supply to 850V, wait for 15 minutes, and carry out the pre-cleaning process of the substrate;

[0038] (5) Turn off the bias power supply, set the argon gas flow rate to 0 sccm, set the substrate temperature to 300°C, set the heating rate to 55.2°C / min, and wait for 5 to 10 minutes to stabilize the temperature;

[0039] (6) The argon flow rate is set...

Embodiment 2

[0046] In this example, the magnetron sputtering method is used to prepare SnO on the n-type silicon substrate. 2 film, the specific process includes the following steps:

[0047] (1) Use acetone, ethanol, and deionized water to perform ultrasonic cleaning on the silicon wafer substrate for 20 minutes each;

[0048] (2) Control the temperature of the oven at 70°C, and dry the substrate for 1 hour;

[0049] (3) Put the dried substrate into the magnetron sputtering chamber, and vacuum the chamber to 6×10 -4 Pa, the distance between the target and the substrate is set to the maximum value that the equipment can achieve, which is 12cm;

[0050] (4) Feed 30 sccm argon gas, control the bias power supply to 850V, wait for 15 minutes, and carry out the pre-cleaning process of the substrate;

[0051] (5) Turn off the bias power supply, set the argon gas flow rate to 0 sccm, set the substrate temperature to 200°C, set the heating rate to 55.2°C / min, and wait for 5 to 10 minutes to st...

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Abstract

The invention relates to a method for increasing work functions of thin transparent conductive oxide films. According to the method, the thin transparent conductive oxide films are prepared with a physical vapor deposition method, during preparation of the thin films, substrates are heated, and heating temperatures are secondary crystallization temperatures of the thin transparent conductive oxidefilms. According to the method, the technology is simple, all that is required is to heat the substrates in situ in the deposition processes of the thin films, other surface treatments are not required to be performed on the thin films or the substrates, the modulation amplitude of the work functions of the thin films is large, and the method is not only applicable to one kind of thin transparentconductive oxide films.

Description

technical field [0001] The invention relates to the technical field of conductive thin films, in particular to a method for improving the work function of transparent conductive oxide thin films. Background technique [0002] Transparent conductive oxide (TCO) thin films have excellent photoelectric properties, and almost all research and preparation of optoelectronic devices involve the selection and preparation of transparent conductive oxide thin films, especially with the development of industries such as flat panel displays, solar cells, and smart windows. With the rise and development of the industry, the demand for transparent conductive oxide films is also increasing day by day. [0003] Since the work function of the transparent conductive oxide film has a direct impact on the interfacial barrier height of the heterojunction in optoelectronic devices, the selection of a transparent conductive oxide film with a high work function can effectively reduce the interface ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/54C23C14/35C23C14/08C23C14/02
CPCC23C14/021C23C14/08C23C14/086C23C14/35C23C14/541
Inventor 唐秀凤马定邦李彬锋黄俏颖杨嘉碧罗坚义
Owner WUYI UNIV
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