Preparation method and apparatus for rare earth element dopped gallium nitride powder material

Abstract

The invention provides a preparation method for a rare earth element dopped gallium nitride powder material, including the following steps: filling a gallium-containing raw material at bottom of an apparatus to cover magnetons at bottom of the apparatus; letting in nitrogen or inert gas from an airflow inlet to purge a reaction chamber and keeping airflow; rising a temperature in the reaction chamber to a first temperature by utilizing a furnace body and starting a magnetic stirring apparatus; rising the temperature continually in the reaction chamber to a second temperature by utilizing the furnace body and switching the gas in the airflow inlet to ammonia gas; rising the temperature continually in the reaction chamber to a third temperature by utilizing the furnace body and keeping the third temperature; closing the magnetic stirring apparatus and cooling the reaction chamber rapidly by utilizing the furnace body. The invention also provides an apparatus, comprising a reaction chamber, which includes magnetons at bottom of the apparatus and a magnetic stirring apparatus at external bottom of the apparatus. The magnetic stirring apparatus is opposite to the magnetons at position and used for cooperating with the magnetons in stirring material in the reaction chamber.

Description

technical field [0001] The invention relates to the field of semiconductor materials, in particular to a preparation method and device of gallium nitride powder material doped with rare earth elements. Background technique [0002] The third-generation semiconductor material GaN (Gallium Nitride, Gallium Nitride) and its related devices have broad application prospects in the fields of optical display, optical storage, laser printing, optical lighting, military and medical treatment, so GaN as the representative The third generation of semiconductor materials is known as the new engine of the IT industry. [0003] GaN is a wide band gap semiconductor with a band gap up to 3.4eV, so various rare earth ions can be doped into GaN without luminescence quenching. The luminescence band of rare earth ions can cover the region from ultraviolet to infrared, and the luminescence transition of rare earth ions mainly occurs between the partially filled 4f energy levels, which is less a...

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Problems solved by technology

[0005] Secondly, when rare earth ions are doped into GaN, they generally replace Ga 3+ lattice sites, while the radius of rare earth ions is generally larger than that of Ga 3+ The radius is larger, Ga 3+ The radius of the rare earth ion is 62 pm, while the radius of the rare earth ion is at 84.8 pm (Lu 3+ ) and 103.4 pm (Ce 3+ ), from the perspective of ionic radius matching, the doping of rare earth ions will cause large lattice distortion, and the generation of this lattice distortion will introduce more point defects, thereby reducing the GaN powder luminous performance

Furthermore, the size of the synthesized rare earth-doped GaN powder is different, and the uniformity of light emission is very poor, which affects the practicability of the GaN powder material.

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