Method for growing GaN-based luminous crystal film by metal organic chemical vapor deposition

A metal organic chemistry, vapor deposition technology, applied in chemical instruments and methods, from chemical reactive gases, single crystal growth and other directions, can solve the problems of reducing the luminescence performance of GaN crystal films, large lattice distortion, etc., to improve luminescence performance. , Improve the effect of lattice distortion

Inactive Publication Date: 2012-02-29
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, from the perspective of ionic radius matching, the doping of rare earth ions will cause large lattice distortion. Undoubtedly, the generation of such lattice distortion will introduce more point defects in the crystal film, thereby reducing the Luminescent Properties of GaN Crystal Films

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] In this example, x=0.1%, y=0.01%, Re is the rare earth element erbium Er, and A is the element boron (B). The above-mentioned weighed raw materials are respectively loaded in the bubbler (hereinafter all referred to as Bubbler) in the MOCVD device, and the H 2 As carrier gas, NH 3 As the nitrogen source, the substrate is sapphire with a GaN film, the substrate temperature is 1020°C, and the growth rate is controlled at 3 μm / h. After the crystal film with a thickness of 5 μm is finally obtained, the substrate is cooled to room temperature, and the rare earth ions and B 3+ Co-doped GaN crystal film. B 3+ Doped with the same concentration of Er 3+ GaN crystal film, the fluorescence intensity is enhanced by 5%-20%.

Embodiment 2

[0018] In this example, x=10%, y=1%, Re is the rare earth element erbium Er, and A is the element boron (B). The above-mentioned weighed raw materials were respectively loaded in the Bubbler in the MOCVD device, and the 2 As carrier gas, NH 3 As a nitrogen source, the substrate is selected to grow silicon with a GaN film. The substrate temperature is 1040°C, and the growth rate is controlled at 2 μm / h. After finally obtaining a crystal film with a thickness of 5 μm, cool the substrate to room temperature, and the rare earth ions and B 3+ Co-doped GaN crystal film. B 3+ Doped with the same concentration of Er 3+ GaN crystal film, the fluorescence intensity is enhanced by 5%-20%.

Embodiment 3

[0020] In this example, x=5%, y=0.5%, Re is the rare earth element erbium Er, and A is the element boron (B). The above-mentioned weighed raw materials were respectively loaded in the Bubbler in the MOCVD device, and the 2 As carrier gas, NH 3 As a nitrogen source, the substrate is sapphire with a GaN film grown on it. The substrate temperature is 1060°C, and the growth rate is controlled at 1 μm / h. After finally obtaining a crystal film with a thickness of 5 μm, cool the substrate to room temperature, and the rare earth ions and B 3+ Co-doped GaN crystal film. B 3+ Doped with the same concentration of Er 3+ GaN crystal film, the fluorescence intensity is enhanced by 5%-20%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for growing a GaN-based luminous crystal film by metal organic chemical vapor deposition. The method is characterized in that: trimethylborine or trimethylaluminium are doped in a raw material formula of the GaN crystal film in proportion, and boron or aluminum enter a GaN crystal lattice in a mode of trivalent ion in a growing process to regulate the ionic radiusdifference between rare-earth ions and Ga3+; the molar ratio of the raw material formula is that: Ga (CH3)3 to rare-earth organic complex to A(CH3)3 is (1-x-y):x:y, wherein the rare-earth organic complex is Re(TMHD)3 or Re (i-PrCp)3 taking rare-earth element Re as a core; A represents III group element boron or aluminum; x is more than or equal to 0.1 percent and less than or equal to 10.0 percent; and y is more than or equal to 0.1 time of the x and less than or equal to x. Because the organic complex of the III group element boron or aluminum and the rare-earth organic complex are co-doped in a certain proportion, the method can improve lattice distortion of the GaN crystal film caused by larger radius mismatch between Re3+ and Ga3+ to a large extent so as to improve the luminous performance of the GaN crystal film.

Description

technical field [0001] The invention relates to a method for growing a GaN film material, in particular to a method for growing a GaN crystal film doped with rare earth ions by MOCVD. Background technique [0002] The third-generation semiconductor material GaN and its related devices have broad application prospects in optical display, optical storage, laser printing, optical lighting, medical and military fields, so the third-generation semiconductor material represented by GaN is known as IT A new engine for the industry. [0003] GaN is a wide band gap semiconductor with a band gap up to 3.4eV, so various rare earth ions can be doped into GaN without luminescence quenching. The luminescence band of rare earth ions can cover the region from ultraviolet to infrared, and the luminescence transition of rare earth ions mainly occurs between the partially filled 4f energy levels, which is less affected by the crystal field environment, the luminescence peak is sharp, and its ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/20C30B29/38
Inventor 曾雄辉徐科王建峰任国强包峰黄凯张锦平
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap