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Rare-earth doped GaN luminescent powder and preparation method thereof

A technology of luminescent powder and rare earth doping, applied in luminescent materials, chemical instruments and methods, etc., can solve the problems of reducing the luminescence performance of GaN powder, large lattice distortion, etc. Effect

Inactive Publication Date: 2013-07-31
SUZHOU UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, from the perspective of ionic radius matching, the doping of rare earth ions will cause large lattice distortion. Undoubtedly, the generation of this lattice distortion will introduce more point defects into the powder, thereby reducing the Luminescent properties of GaN powder

Method used

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  • Rare-earth doped GaN luminescent powder and preparation method thereof

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Embodiment 1

[0017] In terms of molar ratio, the raw material formula of this embodiment is Ga: Re: A=(1-x-y): x: y, wherein, x=0.1%, y=0.01%, Re is the rare earth metal Er, and A is metal B. The above-mentioned weighed raw materials were vacuum-packed in a quartz tube, and the quartz tube was kept at 500° C. for 8 hours, and then cooled to room temperature. Take out the solid solution in the quartz tube, grind it into a powder, put it into a corundum boat in an ammonia atmosphere, control the temperature at 1000°C, keep it warm for 10h, and then cool it to room temperature to take out the rare earth Er 3+ and B 3+ Co-doped GaN powder material. with no co-doped B 3+ Doped with the same concentration of Er 3+ Compared with GaN powder materials, the fluorescence intensity is enhanced by 5% to 20%. The powder material can be applied to the field of flat panel display.

[0018] See attached figure 1 , which is the XRD pattern of the rare-earth-doped GaN luminescent powder provided in thi...

Embodiment 2

[0020] According to the molar ratio of Ga: Re: A=(1-x-y): x: y, in the present embodiment, x=10%, y=1%, Re is the rare earth metal Ce, and A is the metal B. The measured raw materials are vacuum-packed in a quartz tube, and the quartz tube is kept at 1000 ° C for 16 hours, and then cooled to room temperature. Take out the solid solution in the quartz tube, grind it into a powder, put it into a corundum boat in an ammonia atmosphere, control the temperature at 1150°C, keep it warm for 20h, and then cool it to room temperature, then the rare earth Ce can be taken out. 3+ and B 3+ Co-doped GaN powder material. B 3+ Doped with the same concentration of Ce 3+ GaN powder material, the fluorescence intensity is enhanced by 5% to 20%.

Embodiment 3

[0022] According to the molar ratio of Ga:Re:A=(1-x-y):x:y, in this embodiment, x=5%, y=0.5%, Re is the rare earth metal Pr, and A is metal B. The above-mentioned weighed raw materials were vacuum-packed in a quartz tube, and the quartz tube was kept at 800 ° C for 12 hours, and then cooled to room temperature. Take out the solid solution in the quartz tube, grind it into a powder, put it into a corundum boat in an ammonia atmosphere, control the temperature at 1050°C, keep it warm for 15 hours, and then cool it to room temperature to take out the rare earth Pr 3+ and B 3+ Co-doped GaN powder material. B 3+ The same concentration of doped Pr 3+ GaN powder material, the fluorescence intensity is enhanced by 5% to 20%.

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Abstract

The invention relates to a rare-earth doped GaN luminescent powder and preparation method thereof. The chemical formula of the luminescent powder is Ga(1-x-y)RexAyn, wherein Re refers to one of Ce<3+>, Pr<3+>, Nd<3+>, Pm<3+>, Sm<3+>, Eu<3+>, Gd<3+>, Tb<3+>, Dy<3+>, Ho<3+>, Er<3+>, Tm<3+> and Yb<3+>, and A refers to B<3+> or Al<3+>, x refers to the content of Re, y refers to the content of B<3+> or Al<3+>, x is greater than or equal to 0.1% and less than or equal to 10.0%, and y is greater than or equal to 0.1x and less than or equal to x. After raw materials are mixed, the obtained mixture is subjected to thermal insulation in a vacuum quartz tube at a temperature of 500-1000 DEG C for 8-16h; and after the obtained mixture is ground, the ground mixture is subjected to thermal insulation in an ammonia gas atmosphere in a temperature of environment of 1000-1150 DEG C 10-20h, thereby obtaining the luminescent powder material. According to the invention, lattice distortion caused by the radius mismatching between Re<3+> and Ga<3+> is improved, and the luminescent property of GaN powder material is effectively increased.

Description

technical field [0001] The invention relates to a GaN semiconductor material, in particular to a GaN luminescent powder material doped with rare earth ions prepared by a metal ammoniation method and a preparation method thereof. Background technique [0002] The third-generation semiconductor material GaN and its related devices have broad application prospects in optical display, optical storage, laser printing, optical lighting, medical and military fields, so the third-generation semiconductor material represented by GaN is known as IT A new engine for the industry. [0003] GaN is a wide band gap semiconductor with a band gap up to 3.4 eV. Therefore, GaN can be doped with various rare earth ions without luminescence quenching. The luminescence band of rare earth ions can cover the region from ultraviolet to infrared, and the luminescence transition of rare earth ions mainly occurs between the partially filled 4f energy levels, which is less affected by the crystal f...

Claims

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Application Information

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IPC IPC(8): C09K11/80
Inventor 王晓丹毛红敏马春兰
Owner SUZHOU UNIV OF SCI & TECH
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