Rare earth element doped fluorescent powder and preparation method thereof

A technology of rare earth elements and phosphors, applied in chemical instruments and methods, luminescent materials, etc., can solve the problems of reducing the luminescence performance of polycrystalline powder materials, large lattice distortion, etc., and achieve the effect of improving luminescence performance and improving lattice distortion

Active Publication Date: 2013-03-13
SUZHOU NANOWIN SCI & TECH
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

Therefore, from the perspective of ionic radius matching, the doping of rare earth ions will cause large lattice distortion. Undoubtedly, the generation of

Method used

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  • Rare earth element doped fluorescent powder and preparation method thereof

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Effect test

Embodiment 1

[0038] In this example, x=0.1%, y=0.01%, Re is Er 3+ , A is boron element B. So put Ga 2 o 3 , Er 2 o 3 , B 2 o 3 The high-purity raw materials are weighed according to the molar ratio of 0.9989:0.001:0.0001, and the above raw materials are dissolved in concentrated nitric acid to make a solution; the above solution is evaporated at a temperature of 80°C to obtain a dry block, and then ground to obtain a powder body. Under the protection of nitrogen, treat at 500°C for 4h to decompose nitrate to obtain Er-doped 3+ and B 3+ Ga 2 o 3 , and further grind the powder. The resulting doped Ga 2 o 3 Powder in NH 3 Under the protection of the atmosphere, the Er-doped 3+ and B 3+ GaN phosphors. B 2 o 3 Doped with the same concentration of Er 3+ GaN phosphor powder, the fluorescence intensity is enhanced by 5%-20%.

Embodiment 2

[0040] In this example, x=10%, y=1%, Re is Er 3+ , A is boron element B. So put Ga 2 o 3 , Er 2 o 3 , B 2 o 3 The high-purity raw materials are weighed according to the molar ratio of 0.89:0.1:0.01, and the above raw materials are dissolved in concentrated nitric acid to make a solution; the above solution is evaporated at a temperature of 100°C to obtain a dry block, and then ground to obtain a powder body. Under the protection of nitrogen, treat at 700°C for 8h to decompose nitrate to obtain Er-doped 3+ and B 3+ Ga 2 o 3 , and further grind the powder. The resulting doped Ga 2 o 3 Powder in NH 3 Under the protection of the atmosphere, the Er-doped 3+ and B 3+ GaN phosphors. B 2 o 3 Doped with the same concentration of Er 3+ GaN phosphor powder, the fluorescence intensity is enhanced by 5%-20%.

Embodiment 3

[0042] In this example, x=5%, y=0.5%, Re is Er 3+ , A is boron element B. So put Ga 2 o 3 , Er 2 o 3 , B 2 o 3 The high-purity raw materials are weighed according to the molar ratio of 0.945:0.05:0.005, and the above raw materials are dissolved in concentrated nitric acid to make a solution; the above solution is evaporated at a temperature of 95°C to obtain a dry block, and then ground to obtain a powder body. Under the protection of nitrogen, treat at 600°C for 6h to decompose nitrate to obtain Er-doped 3+ and B 3+ Ga 2 o 3 , and further grind the powder. The resulting doped Ga 2 o 3 Powder in NH 3 Under the protection of the atmosphere, the Er-doped 3+ and B 3+ GaN phosphors. B 2 o 3 Doped with the same concentration of Er 3+ GaN phosphor powder, the fluorescence intensity is enhanced by 5%-20%.

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Abstract

The invention discloses rare earth element doped fluorescent powder and a preparation method thereof. The rare earth element doped fluorescent powder comprises polycrystal powder formed by rare earth element doped III group nitride, wherein the III group nitride consists of nitrogen atoms and an III group element; the polycrystal powder further comprises a substitutional dopant which is one III group element or the combination of a plurality of III group elements; the atomic number of a substitutional element is less than that of the III group element forming the polycrystal powder; and the substitutional dopant replaces the traditional III group element in the polycrystal powder to form the substitutional defect. The invention further provides a preparation method of the fluorescent powder. The invention has the advantages that: the lattice distorsion of the polycrystal powder, caused by the mismatching of the larger atom radius, between the III group element and rare earth element is improved by introducing the substitutional dopant to replace the traditional III group element in the polycrystal powder to form the substitutional defect, thereby improving the luminous performance of the powder.

Description

【Technical field】 [0001] The invention relates to the field of semiconductor materials, in particular to a phosphor doped with rare earth elements and a preparation method thereof. 【Background technique】 [0002] The third-generation semiconductor material GaN and its related devices have broad application prospects in optical display, optical storage, laser printing, optical lighting, medical and military fields, so the third-generation semiconductor material represented by GaN is known as IT A new engine for the industry. [0003] GaN is a wide band gap semiconductor with a band gap up to 3.4eV, so various rare earth ions can be doped into GaN without luminescence quenching. Other similar III-nitrides also have the same properties. The luminescence band of rare earth ions can cover the region from ultraviolet to infrared, and the luminescence transition of rare earth ions mainly occurs between the partially filled 4f energy levels, which is less affected by the crystal f...

Claims

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Application Information

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IPC IPC(8): C09K11/80
Inventor 曾雄辉徐科王建峰任国强
Owner SUZHOU NANOWIN SCI & TECH
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