40 results about "Trimethylaluminium" patented technology

The invention discloses an atomic layer deposition method and structure for an aluminum fluoride enhanced aluminum oxide passivation layer of a TOPCon solar cell. The method comprises the steps that after a boron-doped layer is formed on the front face of a crystal silicon wafer, a passivation layer is formed on the boron-doped layer through an atomic layer deposition technology, specifically, Al2O3 deposition circulation is conducted with trimethyl aluminum as an aluminum source and H2O as an oxygen source, AlF3 deposition circulation with aluminum chloride as the aluminum source and HF or NH4F as a fluorine source is periodically inserted, the proportion of the number of deposition circulation times of AlF3 to the number of deposition circulation times of Al2O3 is 1: (1-10), and the passivation layer is formed on the boron-doped layer through the atomic layer deposition technology. And an alternating layer structure with the total thickness of 5-10 nm is formed. According to the invention, an AlF3 layer is periodically inserted in an Al2O3 deposition cycle, so that an Al2O3 / AlF3 superlattice structure is formed. According to the structure, the interface passivation effect is remarkably improved, hydrogen atom overflow is reduced, and the ultraviolet aging resistance is enhanced. The method is compatible with an existing ALD production line, is suitable for high-efficiency TOPCon battery manufacturing, and has a good industrial application prospect.

The invention discloses a polyimide-aluminum oxide composite film material and a preparation method thereof, the composite film material is composed of a polyimide layer and an aluminum oxide layer deposited and combined on the upper surface of the polyimide layer, and the thickness of the polyimide layer and the thickness of the aluminum oxide layer are both nanoscale; the composite film material is prepared by using atomic layer deposition equipment, and the preparation method comprises the following steps: firstly, depositing a nanoscale polyimide layer on a monocrystalline silicon piece carrier according to a set program by taking pyromellitic dianhydride and hexamethylenediamine as precursor raw materials; and depositing and combining a nanoscale aluminum oxide layer on the upper surface of the polyimide layer according to a set program by taking trimethylaluminum and distilled water as precursor raw materials. The prepared composite film material is different from a current composite film material prepared by blending polyimide and aluminum oxide and then carrying out film casting, the composite film material has a nano-scale polyimide layer with uniform thickness and a nano-scale aluminum oxide layer deposited and combined on the upper surface of the polyimide layer, and the composite film material has a good radiation refrigeration effect.

The invention discloses a silicon carbide epitaxial wafer for inhibiting irradiation induced defects, a preparation method and application, and belongs to the technical field of semiconductor materials, the silicon carbide epitaxial wafer comprises an n-type or p-type silicon carbide wafer as a substrate, and an epitaxial layer doped with group IV atoms is epitaxially grown on the substrate. The preparation method comprises the following steps: cleaning an n-type or p-type silicon carbide wafer; placing the cleaned silicon carbide wafer in epitaxial growth equipment and keeping a vacuum environment; raising the temperature of the vacuum environment, and introducing monosilane, propane, nitrogen / hydrogen carrying trimethyl aluminum and gas containing at least one atom of germanium, tin and lead after the temperature is stable; and growing an epitaxial layer on the silicon carbide wafer. The silicon carbide epitaxial wafer is used for producing an anti-radiation silicon carbide power device. According to the invention, generation of carbon vacancies in a silicon carbide device in an irradiation process and minority carrier lifetime degradation caused by the generation of the carbon vacancies can be effectively inhibited, so that the reliability of the silicon carbide epitaxial wafer and a power device thereof under particle irradiation application is improved.

The application belongs to the field of coating technology, and relates to a laser protective lens high-damage threshold coating method based on a semiconductor wafer process, comprising the following steps: sequentially performing ultrasonic cleaning and plasma activation on an optical lens substrate to obtain a pretreated lens; alternately depositing hafnium dioxide film layers and silicon dioxide film layers on the surface of the pretreated lens by using a double-target co-sputtering process to obtain a coated lens; using trimethylaluminum and ozone as precursors, growing an aluminum oxide packaging layer on the surface of the coated lens by using an atomic layer deposition process, and then performing gradient annealing treatment to obtain a laser protective lens. The whole process is systematically optimized from interface bonding, film layer structure to surface packaging. Through the synergistic effect of optimizing each link of the coating process, the intrinsic quality of the film layer is improved while the environmental adaptability is enhanced, so that the lens can withstand long-term irradiation of high-power laser, and the damage resistance and long-term stability of the laser protective lens are significantly improved.

The invention relates to modified aluminoxane and a preparation method and application thereof.The preparation method of the modified aluminoxane comprises the following steps that S1, an oxygen-containing compound containing carbonyl and trimethyl aluminum are dispersed in an organic solvent and heated, a transparent solution without gel is formed, and an MAO solution is obtained; and S2, dropwise adding the MAO solution obtained in the step S1 into a trifluoroaryl boron compound solution, mixing, heating for reaction, and washing and drying an obtained precipitated solid to obtain the modified aluminoxane. Compared with the prior art, the method has the advantages that silicon dioxide and the like are not used as carriers, the alkylaluminoxane solution is prepared only through the non-hydrolysis reaction, and near-particulate solid alkylaluminoxane with the median diameter of 1-80 microns is separated out from the alkylaluminoxane solution, so that when the alkylaluminoxane is applied to a polyolefin catalytic system, the high activity of a catalyst can be maintained; the content of inorganic components in polyolefin is reduced, and the processability of a polymer is improved.

The invention discloses a preparation method of an alkylaluminoxane solution, and belongs to the field of alkylaluminoxane preparation. The method comprises the following steps: firstly, performing vacuum drying on an aluminum hydroxide solid at high temperature to remove moisture adsorbed by the aluminum hydroxide solid; then dispersing aluminum hydroxide in an anhydrous hydrocarbon solvent under anhydrous and anaerobic conditions, adding a hydrocarbon solution of trimethylaluminum, and preparing alkylaluminoxo alkyl substrate through double decomposition reaction of the aluminum hydroxide and the trimethylaluminum; and respectively adding aluminum alkyl and inorganic salt hydrate into the alkyl aluminoxane base, reacting at a set temperature, and filtering to remove inorganic salt by-products after the reaction is completed, thereby obtaining the alkyl aluminoxane solution. The method disclosed by the invention is mild in reaction, high in yield and few in byproducts.

Metallocene solutions containing trimethylaluminum, a C4-C8 alkane solvent, and a metallocene compound in an amount from 0.2 to 8 mg per mL of the metallocene solution are described. Catalyst compositions incorporating these metallocene solutions plus an activator-support and an organoaluminum compound can be utilized in polymerization processes to produce polyethylene products.

The invention discloses a preparation method of a flexible distributed Bragg reflector, relates to the technical field of thin film preparation, and aims to solve the problem of poor reflectivity performance of a distributed Bragg reflector in the prior art. The method comprises the following steps: placing a substrate in a reaction cavity, wherein the substrate is polyethylene glycol terephthalate; forming an aluminum oxide film layer on the substrate by adopting an atomic layer deposition method and taking trimethyl aluminum and water as precursors; forming a hafnium oxide thin film layer on the aluminum oxide thin film layer by adopting an atomic layer deposition method and taking hafnium tetra-dimethylamino and water as precursors; based on the aluminum oxide thin film layer and the hafnium oxide thin film layer, N thin film pairs are obtained through deposition; n is a positive integer greater than or equal to 1; one aluminum oxide film layer and one hafnium oxide film layer form a film pair; and determining the N thin film pairs as flexible distributed Bragg reflectors. According to the preparation method, the reflectivity performance and the application performance of the distributed Bragg reflector are improved.

A raw material composition for forming an aluminum oxide film is disclosed, comprising trimethylaluminum and dimethylaluminum hydride. The content of dimethylaluminum hydride in the raw material composition for forming an aluminum oxide film is greater than 0 ppm by mass and less than or equal to 1000 ppm by mass.

This invention belongs to the field of solar cells, specifically relating to a method for improving the uniformity of alumina thin film deposition in the atomic layer of back-contact solar cells. The method involves double-sided alkaline polishing of silicon wafers using a cleaning machine to create a mirror-like structure. Then, using automated equipment, the double-sided polished silicon wafers are fed into the ALD (Alternating Layer Deposition) system cavity via alternating insertion of trimethylaluminum and water vapor, depositing a thin alumina film on both the front and back sides of the silicon wafer. This invention requires no equipment modification; by adjusting the process and increasing the gap between the upper and lower aluminum boats, it improves the uniformity of alumina thickness, enhances cell passivation stability, reduces the defect rate, thereby increasing cell efficiency and reducing the risk of UV degradation.

This invention provides a raw material composition for forming an aluminum oxide film, a method for forming an aluminum oxide film, an aluminum oxide film, and an apparatus for manufacturing an aluminum oxide film, which improves the step coverage of the aluminum oxide film even when forming an aluminum oxide film on the surface of a three-dimensional substrate. [Solution] A raw material composition for forming an aluminum oxide film, comprising trimethylaluminum and dimethylaluminum hydride, wherein the content of dimethylaluminum hydride in the composition is greater than 0 ppm by mass and less than or equal to 1000 ppm by mass. An aluminum oxide film manufacturing apparatus 100 for forming an aluminum oxide film on the surface of a three-dimensional substrate 31 comprises a raw material supply unit 10 for supplying the raw material composition, a reaction gas supply unit 20 for supplying a reaction gas containing oxygen atoms, and a reaction chamber 30 for reacting the aluminum oxide film forming raw material composition supplied from the raw material supply unit with the reaction gas supplied from the reaction gas supply unit.

The embodiment of the present disclosure relates to the field of photovoltaics, and provides a photovoltaic cell and a preparation method thereof, and a photovoltaic module. The preparation method comprises: providing a substrate comprising a first surface and a second surface; forming a hydrophobic layer covering the second surface; forming an aluminum oxide stack on the first surface by using at least two atomic layer deposition process steps; the step of forming the aluminum oxide stack comprises: placing the substrate covered with the hydrophobic layer in a reaction chamber, any one of the cyclic deposition steps comprises: introducing water vapor and trimethylaluminum into the reaction chamber, and controlling preset process parameters of any one of the cyclic deposition steps in the (N+1)th atomic layer deposition process to be lower than preset process parameters of any one of the cyclic deposition steps in the Nth atomic layer deposition process, the preset process parameters comprising at least one of a water vapor flow rate, a trimethylaluminum flow rate, a water vapor introduction duration and a trimethylaluminum introduction duration. The embodiment of the present disclosure is at least beneficial to avoid backside wrap plating and improve the film layer quality of the aluminum oxide stack.

The application discloses a battery chip back electrode passivation method and relates to the technical field of battery chips, which comprises the following steps: placing a battery chip in a reaction cavity, controlling the temperature and back pressure of the reaction cavity, pulse-injecting a steric slow-release precursor solution prepared by the coordination reaction of trimethylaluminum and tert-butylamine, performing chemical adsorption, introducing double-frequency resonance cascade working gas after purging, starting a high-frequency radio frequency power supply to perform processing, forming an initial-state sub-monolayer, keeping the high-frequency radio frequency power supply on, superimposing a low-frequency radio frequency power supply, controlling the low-frequency power by linear ramping, converting the initial-state sub-monolayer into a dense barrier layer by physical bombardment, shutting down the low-frequency radio frequency power supply, reducing the high-frequency radio frequency power supply to a low-power state, keeping the double-frequency resonance cascade working gas purging, and performing by-product desorption overflow processing. The application takes into account low-damage protection of a sensitive interface and high density of a film layer in a single vacuum process, effectively removes film layer impurities, and improves the corrosion resistance and long-term reliability of the battery chip.

This application provides a method for improving the uniformity of alumina passivation films, relating to the field of photovoltaic cell technology. The method includes: placing a substrate in a reaction chamber; heating the reaction chamber and introducing a first reaction source and an inert gas for deposition; subjecting the reaction chamber to a first vacuum, followed by a first purging with the inert gas, and then subjecting the reaction chamber to a second vacuum; introducing a second reaction source and the inert gas for atomic layer deposition; subjecting the reaction chamber to a third vacuum, followed by a second purging with the inert gas, and then subjecting the reaction chamber to a fourth vacuum; wherein the first reaction source comprises trimethylaluminum, the second reaction source comprises water vapor, and the inert gas comprises nitrogen. The method of this application can effectively make the passivation film growth more uniform, thereby improving the density and uniformity of the passivation film, and thus meeting the requirements of the photovoltaic cell field for alumina passivation films.

This invention belongs to the field of petrochemical catalysis technology and relates to a controlled hydrolysis method for trimethylaluminum and its application. The technical features of this invention are as follows: First, hydrated aluminum sulfate is recrystallized in an aqueous solution containing the antisolvent ethanol to prepare small-crystal, plate-like recrystallized hydrated aluminum sulfate. Second, the recrystallized hydrated aluminum sulfate is subjected to low-temperature drying to adjust its water of crystallization content, obtaining a small-crystal, plate-like aluminum sulfate hydrolysant with a specific water of crystallization content. Third, trimethylaluminum is hydrolyzed using the aluminum sulfate hydrolysant with a specific water of crystallization content, controlling the rate and extent of hydrolysis to obtain a methylaluminoxane co-catalyst solution containing aluminum sulfate. The methylaluminoxane co-catalyst solution containing aluminum sulfate prepared by the method of this invention does not require desalting treatment and can be directly used to construct a PNP-Cr ethylene selective tetramerization catalytic system, providing an option for reducing the manufacturing cost of methylaluminoxane and enabling on-site production and use of methylaluminoxane.

The invention discloses a battery chip back electrode passivation method, which relates to the technical field of battery chips, and comprises the following steps: placing a battery chip in a reaction chamber, controlling the temperature and back pressure of the reaction chamber, performing pulse injection of a steric hindrance type slow-release precursor solution prepared by coordination reaction of trimethyl aluminum and tert-butylamine, performing chemical adsorption, and performing drying to obtain the back electrode of the battery chip. After purging, double-frequency resonance cascade working gas is introduced, a high-frequency radio-frequency power supply is started for processing, and an initial-state sub-single layer is formed; keeping a high-frequency radio-frequency power supply on, superposing a low-frequency radio-frequency power supply, controlling low-frequency power by utilizing linear climbing, and converting an initial-state sub-monolayer into a compact barrier layer through physical bombardment; and turning off the low-frequency radio-frequency power supply, reducing the high-frequency radio-frequency power supply to a low-power state, keeping dual-frequency resonance cascade working gas purging, and carrying out desorption overflow treatment on byproducts. According to the method, low-damage protection of a sensitive interface and high compactness of a film layer are considered in a single vacuum process, impurities of the film layer are effectively removed, and the corrosion resistance and long-term reliability of a battery chip are improved.

The application belongs to the field of organic synthesis and particularly relates to a kind of synthesis potassium ion competitive blocker intermediates and its preparation method, including the following steps: R is C1~C6 alkyl;Including the following steps: (1) in solvent, compound of formula III is reacted with methylamine under the action of trimethylaluminum to obtain compound of formula IV by amine ester exchange reaction;(2) in non-aqueous solvent, compound of formula IV is reacted with reducing agent to obtain compound 1.The application takes 5-(2,4-difluorophenyl)-4-methoxy-1H-pyrrole-3-carboxylic acid methyl ester as raw material, and sequentially passes through sulfurylation, amine ester exchange, reduction reaction three steps to synthesize potassium ion competitive blocker compound 1;The route is simple, reaction condition is mild, three wastes are less, cost is low, purification is simple, and product purity is as high as 99.88%, total yield is as high as 85.5%, and industrialized mass production is easy to realize.

A plasma processing device comprises: a plasma processing chamber; an electrostatic chuck disposed in the plasma processing chamber and containing alumina; a gas supply unit; a plasma generation unit; and a control unit. The control unit is configured to execute control including: (a) control of bringing, in the plasma processing chamber, a trimethylaluminum-containing gas supplied by using the gas supply unit into contact with the electrostatic chuck to deposit a trimethylaluminum-containing film on the electrostatic chuck; and (b), after the (a), control of bringing, in the plasma processing chamber, an O2 plasma generated by using the gas supply unit and the plasma generation unit into contact with the trimethylaluminum-containing film to form an alumina-containing film on the electrostatic chuck.

The application provides a preparation method of a semiconductor structure, comprising the following steps: providing a substrate, forming a germanium-silicon layer on the substrate, performing at least one passivation process on the germanium-silicon layer by using a trimethylaluminum solution, and performing an annealing process on the germanium-silicon layer. The germanium-silicon layer is subjected to trimethylaluminum passivation treatment by using the trimethylaluminum solution, so that a passivation layer containing a large number of Al-O bonds is formed on the surface of the germanium-silicon layer, germanium condensation is formed at the junction of the passivation layer and the germanium-silicon layer, the condensed germanium ions are uniformly diffused into the germanium-silicon layer through the annealing process, the germanium ion concentration in the germanium-silicon layer is improved, a well-shaped germanium-silicon crystal structure is formed by means of the energy provided in the annealing process, and the germanium-silicon layer with low interface trap density and large carrier mobility is provided, so that the performance of the semiconductor device is improved.

This invention relates to the deposition of an alumina etch stop layer. It is characterized by a dielectric constant (k) less than about 7 (e.g., between about 4 and 6) and a density of at least about 2.5 g / cm³. 3 (For example, between approximately 3.0 and 3.2 g / cm³) 3 An alumina film (between metal and dielectric layers) is deposited on partially fabricated semiconductor devices as an etch stop layer. A deposition method that does not cause oxidative damage to the metal is used to deposit the film. Deposition involves reacting an aluminum-containing precursor (e.g., trialkylaluminum) with an alcohol and / or alkoxyaluminum. In one implementation, the method involves flowing trimethylaluminum into a processing chamber housing a substrate with exposed metal and dielectric layers; cleaning and / or evacuating the processing chamber; flowing tert-butanol into the processing chamber and reacting it with trimethylaluminum to form an alumina film; and repeating these process steps until a film of the desired thickness is formed.

The application belongs to the technical field of secondary battery materials, and more particularly relates to a lithium iron phosphate positive electrode material and a preparation method thereof. The specific preparation steps of the application comprise the following steps: 20-30 parts of lithium iron phosphate powder, 200-220 parts of a carbon source mixed solution and 8-10 parts of a dopamine solution are taken according to weight fractions, the mixture is adjusted to weak alkalinity after mixing, and then water is removed by evaporation to obtain a mixed precursor; in the carbon source mixed solution, the following raw materials are included according to weight fractions: 3-5 parts of glucose, 0.2-0.4 parts of water-soluble starch and 180-200 parts of water; the mixed precursor is pre-fired in an inert atmosphere at a temperature of 360-380 DEG C, and then sintered at a temperature of 650-660 DEG C to obtain a sintered material; the water content of the sintered material is adjusted to 6-8% to obtain sintered material wet material; the sintered material wet material is transferred into a container, and trimethylaluminum vapor is introduced into the container, and then the container is subjected to a constant-temperature and constant-pressure reaction at a temperature of 140-150 DEG C and a pressure of 0.18-0.22 MPa, and then the material is discharged and calcined to obtain the lithium iron phosphate positive electrode material.

The invention relates to the technical field of solar cell manufacturing, and discloses a method for double-sided deposition of an aluminum oxide film based on plate-type ALD and application. According to the method for depositing the aluminum oxide film on the two sides based on the plate-type ALD, a specially-made hollowed-out carrier plate structure (the gap width of a hollowed-out carrier plate is controlled to be 1-3 cm) is used in a matched mode, and the deposition process (including optimization of the flow of trimethyl aluminum, the flow of water vapor, the number of swing times and the like) of the double-side aluminum oxide film of the plate-type ALD is optimized; a special double-sided aluminum oxide film structure in which the front aluminum oxide film on the photovoltaic cell is thicker and the back aluminum oxide film on the photovoltaic cell is thinner is realized, so that the front aluminum oxide film and the back aluminum oxide film have ideal thicknesses. Therefore, the aluminum oxide film with the thicker front surface can realize a better passivation effect and lower UV attenuation; and the back aluminum oxide film is kept in a thinner state, so that the passivation effect and the contact performance can be considered, and the photovoltaic cell can obtain higher photoelectric conversion efficiency and lower UV attenuation at the same time.

This invention discloses an alumina / zinc oxide co-doped polythiophene derivative conductive film, its preparation method, and its applications. The preparation method includes the following steps: reacting diethylzinc vapor and water vapor with an initial polythiophene derivative film, repeating this process several times to obtain a zinc oxide-doped polythiophene derivative film; then reacting trimethylaluminum vapor and water vapor with the zinc oxide-doped polythiophene derivative film, repeating the above steps to obtain an alumina / zinc oxide co-doped polythiophene derivative film. This process eliminates the influence of the liquid phase environment on the morphology and structure of the polymer film, and also allows for precise control of the doping amount of various precursor molecules within the polymer matrix. The preparation method disclosed in this invention has the advantages of simple operation, controllable doping process, and stable structure and properties of the modified polymer film, significantly improving the electrical conductivity of the material after modification.

The application provides a method for synthesizing methylaluminoxane by hydrolysis of trimethylaluminum. A solid material is used to disperse trimethylaluminum, and a slurry is formed by stirring in an organic solvent. The slurry is reacted with injected water or ice at a controlled temperature to synthesize methylaluminoxane (MAO). The solid material is a methyl-containing alumina which is insoluble in the organic solvent and can efficiently adsorb and disperse trimethylaluminum. Using the solid material, methylaluminoxane can be produced at a high yield, and the reaction is stable and controllable.

This invention provides a passivation process for the isolation region of a crystalline silicon solar cell based on atomic layer deposition (ALD), comprising the following steps: S1, pre-activating the silicon wafer surface with water in an ALD chamber; S2, depositing a first alumina layer with a thickness of d1 nm (3≤d1≤5) using a cycle where the water exposure time is longer than the trimethylaluminum exposure time; S3, depositing a second alumina layer with a thickness of d2 nm (4≤d2≤7) on the surface of the first alumina layer using a cycle where the trimethylaluminum exposure time is longer than the water exposure time; S4, performing hydroxylation modification on the surface of the second alumina layer to form a hydroxyl termination layer; S5, depositing a silicon nitride layer, a silicon oxynitride layer, or a silicon nitride and silicon oxynitride stack using PECVD. This invention achieves high-stability passivation of the isolation region of a crystalline silicon solar cell through pre-activation of the silicon wafer surface, combined with ALD layered alumina deposition, and further PECVD generation of a cover film, demonstrating synergistic layering functions from the interface to the film layer.

Disclosed is a raw material composition for forming an aluminum oxide film, the raw material composition containing trimethylaluminum and dimethylaluminum hydride. The dimethylaluminum hydride content of the raw material composition for forming an aluminum oxide film is greater than 0 mass ppm and no greater than 1000 mass ppm.

A method including: contacting a support material including absorbed water with trimethylaluminum (TMA) in an aliphatic hydrocarbon; removing the aliphatic hydrocarbon by distillation at a pressure greater than or equal to 0.5 atm; heating, at a temperature ranging from about 25° C. to about 200° C., a reaction product of the support material and the TMA in a presence of TMA, wherein the TMA includes TMA in an amount of about 2-10 mmol TMA per gram of the support material in excess of an amount that reacts with the support material absorbed with water; and removing excess TMA.

The application discloses a method for preparing a solar cell, the solar cell and application thereof, and the method comprises the following steps: (1) performing ALD deposition of an aluminum oxide layer on the surface of a silicon wafer, the ALD deposition of the aluminum oxide layer comprises a plurality of reaction cycles, each reaction cycle comprises sequentially performing a trimethylaluminum vapor pulse, a first nitrogen blowing, a water vapor pulse and a second nitrogen blowing; the ratio of the trimethylaluminum vapor pulse time to the water vapor pulse time is 1:(0.5-1.15); (2) performing annealing treatment on the silicon wafer in an oxidizing atmosphere; and (3) forming a silicon nitride layer on the surface of the aluminum oxide layer away from the silicon wafer. By optimizing the process conditions of the ALD deposition of the aluminum oxide layer, the content of hydrogen atoms in the aluminum oxide layer is reduced, so that the risk of film explosion of the aluminum oxide layer is reduced. Meanwhile, the oxidizing gas is introduced in the annealing process, so that a dense silicon oxide layer is formed between the silicon wafer and the aluminum oxide, and excellent chemical passivation effect is ensured.

The application discloses a La-Al composite oxide etching-resistant coating and a preparation method and application thereof, and the etching-resistant coating comprises a lanthanum oxide layer and an aluminum oxide layer formed by ALD, and the atomic fraction of La is 9-64%. The lanthanum oxide layer is deposited by taking tri(dimethylamino) lanthanum and ozone as precursors, and the aluminum oxide layer is deposited by taking trimethylaluminum and water as precursors; the lanthanum oxide layer and the aluminum oxide layer are alternately deposited on the surface of a substrate by ALD, the circulation ratio is 1:5-5:1, and the process is continued until the target thickness is reached. By optimizing the atomic ratio of La and Al in the coating and the interlayer composite structure, the problem that lanthanum oxide is easily reacted with water and CO2 in the air to generate hydroxylation and carbonation, thereby resulting in insufficient environmental stability, is solved, the obtained coating has excellent etching-resistant performance to fluorine-containing plasma and environmental stability, and the etching-resistant performance of the coating can be maintained well after exposure to water and CO2 environment.