74 results about "Trimethylaluminium" patented technology

The invention discloses a method for preparing methylaluminoxane by directly hydrolyzing trimethyl aluminum and a reaction device, and belongs to the technical field of chemical products. Comprising the following steps: introducing low-temperature methane gas containing gas-phase water into a trimethylaluminum organic solution, carrying out hydrolysis reaction under the dual effects of ultrasonic vibration and mechanical stirring and mixing, and filtering to remove solid substances after the reaction is completed, so as to obtain a methylaluminoxane solution. According to the method for preparing methylaluminoxane through direct hydrolysis of trimethyl aluminum, the hydrolysis quality of methylaluminoxane can be guaranteed, generation of gels such as aluminum hydroxide is effectively controlled, and the product yield is greatly increased; and the byproduct methane is high in purity, can be recycled and is free of environmental pollution and energy waste, so that the production cost is remarkably reduced.

The invention discloses an atomic layer deposition method and structure for an aluminum fluoride enhanced aluminum oxide passivation layer of a TOPCon solar cell. The method comprises the steps that after a boron-doped layer is formed on the front face of a crystal silicon wafer, a passivation layer is formed on the boron-doped layer through an atomic layer deposition technology, specifically, Al2O3 deposition circulation is conducted with trimethyl aluminum as an aluminum source and H2O as an oxygen source, AlF3 deposition circulation with aluminum chloride as the aluminum source and HF or NH4F as a fluorine source is periodically inserted, the proportion of the number of deposition circulation times of AlF3 to the number of deposition circulation times of Al2O3 is 1: (1-10), and the passivation layer is formed on the boron-doped layer through the atomic layer deposition technology. And an alternating layer structure with the total thickness of 5-10 nm is formed. According to the invention, an AlF3 layer is periodically inserted in an Al2O3 deposition cycle, so that an Al2O3 / AlF3 superlattice structure is formed. According to the structure, the interface passivation effect is remarkably improved, hydrogen atom overflow is reduced, and the ultraviolet aging resistance is enhanced. The method is compatible with an existing ALD production line, is suitable for high-efficiency TOPCon battery manufacturing, and has a good industrial application prospect.

The invention discloses a preparation method of a lithium aluminum titanium phosphate solid electrolyte nano powder material, which comprises the following steps: S1, weighing a lithium source, an aluminum source, a titanium source and a phosphorus source, and preparing a sol precursor; s2, performing microwave treatment to obtain a gelatinous intermediate; s3, carrying out annealing treatment after grinding to obtain nano titanium aluminum lithium phosphate powder; s4, placing the substrate in a plasma enhanced atomic layer deposition reaction cavity, vacuumizing, and introducing plasma activation gas; alternately pulse trimethylaluminum and titanium tetrachloride precursors, and depositing to obtain a gradient oxide intermediate layer; s5, introducing oxygen plasma to oxidize the residual precursor to form a gradient oxide coating layer; and S6, carrying out annealing treatment to obtain the lithium titanium aluminum phosphate solid electrolyte nano-powder material. According to the preparation method disclosed by the invention, the side reaction of the LATP powder and lithium metal is effectively inhibited, the interface stability and the ionic conductivity are improved, and the high-performance requirement of an all-solid-state lithium ion battery on a solid electrolyte material can be met.

The invention discloses a polyimide-aluminum oxide composite film material and a preparation method thereof, the composite film material is composed of a polyimide layer and an aluminum oxide layer deposited and combined on the upper surface of the polyimide layer, and the thickness of the polyimide layer and the thickness of the aluminum oxide layer are both nanoscale; the composite film material is prepared by using atomic layer deposition equipment, and the preparation method comprises the following steps: firstly, depositing a nanoscale polyimide layer on a monocrystalline silicon piece carrier according to a set program by taking pyromellitic dianhydride and hexamethylenediamine as precursor raw materials; and depositing and combining a nanoscale aluminum oxide layer on the upper surface of the polyimide layer according to a set program by taking trimethylaluminum and distilled water as precursor raw materials. The prepared composite film material is different from a current composite film material prepared by blending polyimide and aluminum oxide and then carrying out film casting, the composite film material has a nano-scale polyimide layer with uniform thickness and a nano-scale aluminum oxide layer deposited and combined on the upper surface of the polyimide layer, and the composite film material has a good radiation refrigeration effect.

The invention discloses a silicon carbide epitaxial wafer for inhibiting irradiation induced defects, a preparation method and application, and belongs to the technical field of semiconductor materials, the silicon carbide epitaxial wafer comprises an n-type or p-type silicon carbide wafer as a substrate, and an epitaxial layer doped with group IV atoms is epitaxially grown on the substrate. The preparation method comprises the following steps: cleaning an n-type or p-type silicon carbide wafer; placing the cleaned silicon carbide wafer in epitaxial growth equipment and keeping a vacuum environment; raising the temperature of the vacuum environment, and introducing monosilane, propane, nitrogen / hydrogen carrying trimethyl aluminum and gas containing at least one atom of germanium, tin and lead after the temperature is stable; and growing an epitaxial layer on the silicon carbide wafer. The silicon carbide epitaxial wafer is used for producing an anti-radiation silicon carbide power device. According to the invention, generation of carbon vacancies in a silicon carbide device in an irradiation process and minority carrier lifetime degradation caused by the generation of the carbon vacancies can be effectively inhibited, so that the reliability of the silicon carbide epitaxial wafer and a power device thereof under particle irradiation application is improved.

This application discloses a method for preparing a trimethylaluminum-doped lead selenide colloidal quantum dot film. The method comprises: obtaining a fifth mixed solution; spin-coating the fifth mixed solution onto a target sample and annealing the solution for a preset annealing time to obtain an initial lead selenide colloidal quantum dot film; placing the initial lead selenide colloidal quantum dot film in a chamber, evacuating the chamber until the pressure reaches a preset pressure, heating the initial lead selenide colloidal quantum dot film to a preset temperature; and introducing trimethylaluminum gas into the chamber to obtain the trimethylaluminum-doped lead selenide colloidal quantum dot film. This application can improve the mobility of colloidal quantum dot detectors.

The invention discloses a high-efficiency polycarboxylic acid polyether macromonomer preparation method, and belongs to the field of polycarboxylic acid polyether macromonomers, in the reaction, enol is added, nitrogen is used for replacement, then trimethylaluminum and anhydrous zinc chloride are added, stirring is carried out for dissolution, metallic sodium is added as a catalyst to obtain an initiator, the reaction time is 200-360 min, the addition amount of trimethylaluminum is 0.002-0.003%, the reaction time is 1-2 min, and the reaction time is 1-2 min. The addition amount of anhydrous zinc chloride is 0.005-0.006%, and the principle is that trimethylaluminum and anhydrous zinc chloride belong to Lewi acids, have a vacancy capable of accepting electron pairs to form coordinate bonds, react with Lewi alkali, and can be combined with alcohol to generate Lewi acid characteristics to react with metal sodium. In the prior art, a larger reactor is configured to increase the single-batch yield of an initiator, the input amount of single-batch alkali metal (such as metal sodium and sodium hydride) is increased sharply, and the production risk is greatly improved; and meanwhile, the prolonging of the storage time of the initiator can cause the increase of chromaticity and directly influence the stability of product indexes, and the method is mainly applied to the synthesis of polycarboxylic acid polyether macromonomers.

The application belongs to the field of coating technology, and relates to a laser protective lens high-damage threshold coating method based on a semiconductor wafer process, comprising the following steps: sequentially performing ultrasonic cleaning and plasma activation on an optical lens substrate to obtain a pretreated lens; alternately depositing hafnium dioxide film layers and silicon dioxide film layers on the surface of the pretreated lens by using a double-target co-sputtering process to obtain a coated lens; using trimethylaluminum and ozone as precursors, growing an aluminum oxide packaging layer on the surface of the coated lens by using an atomic layer deposition process, and then performing gradient annealing treatment to obtain a laser protective lens. The whole process is systematically optimized from interface bonding, film layer structure to surface packaging. Through the synergistic effect of optimizing each link of the coating process, the intrinsic quality of the film layer is improved while the environmental adaptability is enhanced, so that the lens can withstand long-term irradiation of high-power laser, and the damage resistance and long-term stability of the laser protective lens are significantly improved.

The invention relates to modified aluminoxane and a preparation method and application thereof.The preparation method of the modified aluminoxane comprises the following steps that S1, an oxygen-containing compound containing carbonyl and trimethyl aluminum are dispersed in an organic solvent and heated, a transparent solution without gel is formed, and an MAO solution is obtained; and S2, dropwise adding the MAO solution obtained in the step S1 into a trifluoroaryl boron compound solution, mixing, heating for reaction, and washing and drying an obtained precipitated solid to obtain the modified aluminoxane. Compared with the prior art, the method has the advantages that silicon dioxide and the like are not used as carriers, the alkylaluminoxane solution is prepared only through the non-hydrolysis reaction, and near-particulate solid alkylaluminoxane with the median diameter of 1-80 microns is separated out from the alkylaluminoxane solution, so that when the alkylaluminoxane is applied to a polyolefin catalytic system, the high activity of a catalyst can be maintained; the content of inorganic components in polyolefin is reduced, and the processability of a polymer is improved.

The invention discloses a preparation method of an alkylaluminoxane solution, and belongs to the field of alkylaluminoxane preparation. The method comprises the following steps: firstly, performing vacuum drying on an aluminum hydroxide solid at high temperature to remove moisture adsorbed by the aluminum hydroxide solid; then dispersing aluminum hydroxide in an anhydrous hydrocarbon solvent under anhydrous and anaerobic conditions, adding a hydrocarbon solution of trimethylaluminum, and preparing alkylaluminoxo alkyl substrate through double decomposition reaction of the aluminum hydroxide and the trimethylaluminum; and respectively adding aluminum alkyl and inorganic salt hydrate into the alkyl aluminoxane base, reacting at a set temperature, and filtering to remove inorganic salt by-products after the reaction is completed, thereby obtaining the alkyl aluminoxane solution. The method disclosed by the invention is mild in reaction, high in yield and few in byproducts.

The invention discloses a synthesis method of a bithiophene polymer containing a methylthio group and application of the bithiophene polymer containing the methylthio group in a photoelectric device, and the synthesis method comprises the following steps: S1, mixing a monomer A (x mmol) containing thiophene, a monomer B (y mmol) containing the methylthio group and thiophene and a ligand in a nitrogen atmosphere, and then adding iron triacetylacetonate (0.067 M) dissolved in THF to obtain a solution; s2, slowly dropwise adding a toluene solution (1.6 M) of trimethylaluminum into the solution, and finally adding an oxidizing agent diethyl oxalate to obtain a mixed solution; s3, heating and stirring the mixed solution at 70 DEG C, dropwise adding methanol into the reaction solution after 22 hours to stop the reaction, and finally, repeatedly cleaning the reaction solution with various solvents to obtain a solid, namely the polytriarylamine bithiophene polymer containing the methylthio group, the invention relates to the technical field of bithiophene polymer synthesis, and due to the strong combination effect of the methylthio group and a metal interface, the polytriarylamine bithiophene polymer containing the methylthio group can be used for preparing the polytriarylamine bithiophene polymer containing the methylthio group. The polymer introduced with the methylthio substituent shows an excellent passivation effect, so that the energy conversion efficiency and the device stability are greatly improved.

Metallocene solutions containing trimethylaluminum, a C4-C8 alkane solvent, and a metallocene compound in an amount from 0.2 to 8 mg per mL of the metallocene solution are described. Catalyst compositions incorporating these metallocene solutions plus an activator-support and an organoaluminum compound can be utilized in polymerization processes to produce polyethylene products.

The invention belongs to the technical field of silicon carbide epitaxial growth, and discloses a method for improving doping concentration uniformity of a P-type silicon carbide epitaxial wafer, which comprises the following steps of: introducing hydrogen with a preset flow into a reaction chamber, placing a silicon carbide substrate in the reaction chamber, keeping the input flow of the hydrogen unchanged, respectively adjusting the temperature and the pressure of the reaction chamber to a preset etching temperature and a preset etching pressure so as to etch the surface of the silicon carbide substrate to obtain the surface-etched silicon carbide substrate, and inputting ethylene gas and trichlorosilane gas into the reaction chamber through a lower channel of the layered gas homogenizing box so as to obtain the surface-etched silicon carbide substrate. Trimethylaluminum gas is input into the reaction chamber through an upper channel of the layered gas uniformizing box so as to promote the surface-etched silicon carbide substrate to grow an epitaxial layer, and a P-type silicon carbide epitaxial wafer with uniform doping concentration is prepared; reaction gas is separately input through the layered gas uniformizing box, the P-type silicon carbide epitaxial wafer with the uniform doping concentration is prepared, and the doping concentration uniformity of the P-type silicon carbide epitaxial wafer is improved.

The invention discloses a preparation method of a flexible distributed Bragg reflector, relates to the technical field of thin film preparation, and aims to solve the problem of poor reflectivity performance of a distributed Bragg reflector in the prior art. The method comprises the following steps: placing a substrate in a reaction cavity, wherein the substrate is polyethylene glycol terephthalate; forming an aluminum oxide film layer on the substrate by adopting an atomic layer deposition method and taking trimethyl aluminum and water as precursors; forming a hafnium oxide thin film layer on the aluminum oxide thin film layer by adopting an atomic layer deposition method and taking hafnium tetra-dimethylamino and water as precursors; based on the aluminum oxide thin film layer and the hafnium oxide thin film layer, N thin film pairs are obtained through deposition; n is a positive integer greater than or equal to 1; one aluminum oxide film layer and one hafnium oxide film layer form a film pair; and determining the N thin film pairs as flexible distributed Bragg reflectors. According to the preparation method, the reflectivity performance and the application performance of the distributed Bragg reflector are improved.

This invention discloses a light-emitting diode (LED) epitaxial wafer and its fabrication method, relating to the field of semiconductor process technology. The LED epitaxial wafer includes an electron blocking layer. The fabrication method includes: sequentially growing n AlGaN layers using ammonia, trimethylaluminum, and trimethylgallium as raw materials, and hydrogen and nitrogen as carrier gases, to prepare the electron blocking layer of the LED epitaxial wafer. The flow rates of the trimethylaluminum and ammonia gradually change with the increase of the number of AlGaN layers, and the flow rate of the trimethylaluminum changes in the opposite direction to that of the ammonia. This invention solves the technical problem in the prior art where the electron blocking layer introduces a large amount of impurities such as C and O, affecting the crystal quality of the electron blocking layer.

The invention belongs to the technical field of semiconductors, and relates to a method for improving stability of an IGO / IGZO thin film transistor through passivation, which comprises the following steps of: (1) providing an IGO / IGZO thin film, and feeding the IGO / IGZO thin film into a reaction chamber; (2) introducing trimethylaluminum into the reaction chamber, and introducing nitrogen at variable pressure; (3) introducing nitrogen into the reaction chamber, and purging the reaction chamber; (4) introducing water vapor into the reaction chamber, and introducing nitrogen at variable pressure; (5) introducing nitrogen into the reaction chamber, and purging the reaction chamber; and circulating the step (2) to the step (5) to obtain the IGO / IGZO thin film after passivation of the aluminum oxide thin film. The passivation technology is introduced, the problems of device performance reduction and instability caused by water and oxygen in air when a device is used are solved, and the mobility and stability of the IGO thin film transistor are improved.

A raw material composition for forming an aluminum oxide film is disclosed, comprising trimethylaluminum and dimethylaluminum hydride. The content of dimethylaluminum hydride in the raw material composition for forming an aluminum oxide film is greater than 0 ppm by mass and less than or equal to 1000 ppm by mass.

This invention belongs to the field of solar cells, specifically relating to a method for improving the uniformity of alumina thin film deposition in the atomic layer of back-contact solar cells. The method involves double-sided alkaline polishing of silicon wafers using a cleaning machine to create a mirror-like structure. Then, using automated equipment, the double-sided polished silicon wafers are fed into the ALD (Alternating Layer Deposition) system cavity via alternating insertion of trimethylaluminum and water vapor, depositing a thin alumina film on both the front and back sides of the silicon wafer. This invention requires no equipment modification; by adjusting the process and increasing the gap between the upper and lower aluminum boats, it improves the uniformity of alumina thickness, enhances cell passivation stability, reduces the defect rate, thereby increasing cell efficiency and reducing the risk of UV degradation.

This invention provides a raw material composition for forming an aluminum oxide film, a method for forming an aluminum oxide film, an aluminum oxide film, and an apparatus for manufacturing an aluminum oxide film, which improves the step coverage of the aluminum oxide film even when forming an aluminum oxide film on the surface of a three-dimensional substrate. [Solution] A raw material composition for forming an aluminum oxide film, comprising trimethylaluminum and dimethylaluminum hydride, wherein the content of dimethylaluminum hydride in the composition is greater than 0 ppm by mass and less than or equal to 1000 ppm by mass. An aluminum oxide film manufacturing apparatus 100 for forming an aluminum oxide film on the surface of a three-dimensional substrate 31 comprises a raw material supply unit 10 for supplying the raw material composition, a reaction gas supply unit 20 for supplying a reaction gas containing oxygen atoms, and a reaction chamber 30 for reacting the aluminum oxide film forming raw material composition supplied from the raw material supply unit with the reaction gas supplied from the reaction gas supply unit.

The invention relates to the technical field of metal organic source purification, and particularly discloses an efficient purification process for trimethyl aluminum. The efficient purification process for trimethyl aluminum provided by the invention comprises the following steps: S1, carrying out infrasonic wave pretreatment on a trimethyl aluminum crude product and synchronously carrying out low-temperature cooling; s2, reduced pressure distillation: continuously extracting low-boiling-point impurities under a dynamic vacuum condition, and collecting fractions by adopting a cryogenic receiving tank; and S3, carrying out gradient condensation and vacuumizing on the residual mother liquor to obtain the ultra-pure trimethyl aluminum. According to the efficient purification process for trimethyl aluminum, the chemical adsorption state of trace impurities (such as dimethyl aluminum chloride, organic silicon and the like) is accurately destroyed through the infrasonic wave-low temperature coupling effect, and the removal efficiency of ppm-level impurities is remarkably improved in combination with vacuum gradient separation. The method has the advantages that aluminum oxide particle pollution caused by high temperature is avoided, meanwhile, energy consumption is greatly reduced, and the method is particularly suitable for large-scale continuous production of semiconductor-grade purity trimethyl aluminum.

The embodiment of the present disclosure relates to the field of photovoltaics, and provides a photovoltaic cell and a preparation method thereof, and a photovoltaic module. The preparation method comprises: providing a substrate comprising a first surface and a second surface; forming a hydrophobic layer covering the second surface; forming an aluminum oxide stack on the first surface by using at least two atomic layer deposition process steps; the step of forming the aluminum oxide stack comprises: placing the substrate covered with the hydrophobic layer in a reaction chamber, any one of the cyclic deposition steps comprises: introducing water vapor and trimethylaluminum into the reaction chamber, and controlling preset process parameters of any one of the cyclic deposition steps in the (N+1)th atomic layer deposition process to be lower than preset process parameters of any one of the cyclic deposition steps in the Nth atomic layer deposition process, the preset process parameters comprising at least one of a water vapor flow rate, a trimethylaluminum flow rate, a water vapor introduction duration and a trimethylaluminum introduction duration. The embodiment of the present disclosure is at least beneficial to avoid backside wrap plating and improve the film layer quality of the aluminum oxide stack.

The application discloses a sample solution preparation method for trace impurity analysis of high-purity trimethylaluminum, and belongs to the technical field of trace impurity analysis, and the preparation steps are as follows: a magnetic stirring rotor is placed in a flue gas absorption bottle, nitric acid solution is added, and a magnetic stirring heater is started; high-purity trimethylaluminum is added into an oxidation decomposition bottle, a gas cylinder pressure reducing valve and an air inlet valve are opened, oxygen-nitrogen mixed gas in a gas cylinder is transported into the oxidation decomposition bottle, then an air outlet valve and an automatic one-way valve are opened, when there is no high-purity trimethylaluminum in the oxidation decomposition bottle, all the valves are closed, and a sample solution for trace impurity analysis of high-purity trimethylaluminum is obtained. The application adopts the method of oxidizing and decomposing trimethylaluminum by using high-purity oxygen-nitrogen mixed gas, and then nitric acid solution is used to dissolve aluminum oxide powder to prepare an aluminum ion nitric acid solution. The application has the advantages of single chemical variety, low concentration, no need for additional treatment of tail gas, simpler device structure, easy operation, low investment cost, safety, economy, and environmental protection.

The application discloses a battery chip back electrode passivation method and relates to the technical field of battery chips, which comprises the following steps: placing a battery chip in a reaction cavity, controlling the temperature and back pressure of the reaction cavity, pulse-injecting a steric slow-release precursor solution prepared by the coordination reaction of trimethylaluminum and tert-butylamine, performing chemical adsorption, introducing double-frequency resonance cascade working gas after purging, starting a high-frequency radio frequency power supply to perform processing, forming an initial-state sub-monolayer, keeping the high-frequency radio frequency power supply on, superimposing a low-frequency radio frequency power supply, controlling the low-frequency power by linear ramping, converting the initial-state sub-monolayer into a dense barrier layer by physical bombardment, shutting down the low-frequency radio frequency power supply, reducing the high-frequency radio frequency power supply to a low-power state, keeping the double-frequency resonance cascade working gas purging, and performing by-product desorption overflow processing. The application takes into account low-damage protection of a sensitive interface and high density of a film layer in a single vacuum process, effectively removes film layer impurities, and improves the corrosion resistance and long-term reliability of the battery chip.

This application provides a method for improving the uniformity of alumina passivation films, relating to the field of photovoltaic cell technology. The method includes: placing a substrate in a reaction chamber; heating the reaction chamber and introducing a first reaction source and an inert gas for deposition; subjecting the reaction chamber to a first vacuum, followed by a first purging with the inert gas, and then subjecting the reaction chamber to a second vacuum; introducing a second reaction source and the inert gas for atomic layer deposition; subjecting the reaction chamber to a third vacuum, followed by a second purging with the inert gas, and then subjecting the reaction chamber to a fourth vacuum; wherein the first reaction source comprises trimethylaluminum, the second reaction source comprises water vapor, and the inert gas comprises nitrogen. The method of this application can effectively make the passivation film growth more uniform, thereby improving the density and uniformity of the passivation film, and thus meeting the requirements of the photovoltaic cell field for alumina passivation films.

This invention belongs to the field of petrochemical catalysis technology and relates to a controlled hydrolysis method for trimethylaluminum and its application. The technical features of this invention are as follows: First, hydrated aluminum sulfate is recrystallized in an aqueous solution containing the antisolvent ethanol to prepare small-crystal, plate-like recrystallized hydrated aluminum sulfate. Second, the recrystallized hydrated aluminum sulfate is subjected to low-temperature drying to adjust its water of crystallization content, obtaining a small-crystal, plate-like aluminum sulfate hydrolysant with a specific water of crystallization content. Third, trimethylaluminum is hydrolyzed using the aluminum sulfate hydrolysant with a specific water of crystallization content, controlling the rate and extent of hydrolysis to obtain a methylaluminoxane co-catalyst solution containing aluminum sulfate. The methylaluminoxane co-catalyst solution containing aluminum sulfate prepared by the method of this invention does not require desalting treatment and can be directly used to construct a PNP-Cr ethylene selective tetramerization catalytic system, providing an option for reducing the manufacturing cost of methylaluminoxane and enabling on-site production and use of methylaluminoxane.

The invention discloses a battery chip back electrode passivation method, which relates to the technical field of battery chips, and comprises the following steps: placing a battery chip in a reaction chamber, controlling the temperature and back pressure of the reaction chamber, performing pulse injection of a steric hindrance type slow-release precursor solution prepared by coordination reaction of trimethyl aluminum and tert-butylamine, performing chemical adsorption, and performing drying to obtain the back electrode of the battery chip. After purging, double-frequency resonance cascade working gas is introduced, a high-frequency radio-frequency power supply is started for processing, and an initial-state sub-single layer is formed; keeping a high-frequency radio-frequency power supply on, superposing a low-frequency radio-frequency power supply, controlling low-frequency power by utilizing linear climbing, and converting an initial-state sub-monolayer into a compact barrier layer through physical bombardment; and turning off the low-frequency radio-frequency power supply, reducing the high-frequency radio-frequency power supply to a low-power state, keeping dual-frequency resonance cascade working gas purging, and carrying out desorption overflow treatment on byproducts. According to the method, low-damage protection of a sensitive interface and high compactness of a film layer are considered in a single vacuum process, impurities of the film layer are effectively removed, and the corrosion resistance and long-term reliability of a battery chip are improved.

The invention discloses a trimethyl boron preparation method and device, namely trimethyl boron is prepared by reaction of trimethyl aluminum and boron trichloride, the conversion rate of boron trichloride can reach 99%, the yield of trimethyl boron is greater than or equal to 95%, the purity is greater than 99%, the method is convenient and low in cost, and the trimethyl boron production process is simpler. Meanwhile, a set of reaction device for continuously preparing trimethyl boron is designed and developed, the reaction device is composed of a feeding system, a reaction system, a temperature control system, a product purification and collection system, a product collection system and a temperature control system, and the method and the device can efficiently produce trimethyl boron.

The application belongs to the field of organic synthesis and particularly relates to a kind of synthesis potassium ion competitive blocker intermediates and its preparation method, including the following steps: R is C1~C6 alkyl;Including the following steps: (1) in solvent, compound of formula III is reacted with methylamine under the action of trimethylaluminum to obtain compound of formula IV by amine ester exchange reaction;(2) in non-aqueous solvent, compound of formula IV is reacted with reducing agent to obtain compound 1.The application takes 5-(2,4-difluorophenyl)-4-methoxy-1H-pyrrole-3-carboxylic acid methyl ester as raw material, and sequentially passes through sulfurylation, amine ester exchange, reduction reaction three steps to synthesize potassium ion competitive blocker compound 1;The route is simple, reaction condition is mild, three wastes are less, cost is low, purification is simple, and product purity is as high as 99.88%, total yield is as high as 85.5%, and industrialized mass production is easy to realize.

The invention relates to a method for restoring and verifying a growth environment in a reaction cavity after maintenance of MOCVD (Metal Organic Chemical Vapor Deposition) equipment. The method comprises the following steps: introducing hydrogen into a reaction cavity of MOCVD (Metal Organic Chemical Vapor Deposition) equipment, respectively carrying out low-temperature baking, medium-temperature baking and high-temperature baking, and then introducing trimethylaluminum and special gas into the reaction cavity of the equipment, so that water oxygen molecules react with the trimethylaluminum. Trimethylaluminum, trimethyl gallium and special gas are introduced to form a heterojunction, and the elimination condition of water and oxygen impurities in the reaction cavity is verified according to the luminous intensity of the heterojunction. According to the recovery and verification method provided by the invention, water and oxygen impurities can be completely removed, and the recovery condition of the growth environment in the cavity can be verified.

A plasma processing device comprises: a plasma processing chamber; an electrostatic chuck disposed in the plasma processing chamber and containing alumina; a gas supply unit; a plasma generation unit; and a control unit. The control unit is configured to execute control including: (a) control of bringing, in the plasma processing chamber, a trimethylaluminum-containing gas supplied by using the gas supply unit into contact with the electrostatic chuck to deposit a trimethylaluminum-containing film on the electrostatic chuck; and (b), after the (a), control of bringing, in the plasma processing chamber, an O2 plasma generated by using the gas supply unit and the plasma generation unit into contact with the trimethylaluminum-containing film to form an alumina-containing film on the electrostatic chuck.