Method for preparing substrate material with multilayer composite protective film

Abstract

The invention relates to a method for preparing a substrate material with a multilayer composite protective film, which comprises the following steps: putting the substrate material into a reaction chamber, and heating the substrate material until the temperature thereof is 100 to 500 DEG C; introducing trimethyl aluminum or Al (CH3) N (CH2) 5CH3 precursor into the reaction chamber within 0.2 to 0.5 seconds under the pressure of 0.1 to 10 Torr; introducing nitrogen or inert gas into the reaction chamber so as to remove the trimethyl aluminum or Al (CH3) N (CH2) 5CH3 residual gas which is not subjected to chemisorption by a substrate; under the pressure of 0.1 to 10 Torr, introducing ozone or vapor reactive gas into the reaction chamber within 0.2 to 0.5 seconds so as to deposit an alumina atom layer on the substrate, wherein the thickness of the alumina atom layer on the substrate is 2 to 100nm; and replacing the trimethyl aluminum or Al (CH3) N (CH2) 5CH3 precursor by using chlorosilane, hexachlorodisilane or tetraethyl orthosilicate as silicon source, then repeating the steps above, and covering a silicon dioxide layer on an alumina layer, wherein the thickness of the alumina layer is 2 to 100nm; and finally, obtaining the substrate material with a composite inorganic protective film in a Al2O3 / SiO2 double-layer structure, wherein the thickness of the substrate material is 5 to 120nm. The method can precisely control the thickness of the film, wherein the thickness of the film can directly and precisely be controlled within a range of 1 to 100nm, and the film has excellent oxidation resistance and gas permeation resistance, and can control the ratio of Al2O3 to SiO2.

Description

field of invention [0001] The invention relates to a preparation method of a base material with a multilayer composite inorganic protective film. Background technique [0002] There are many methods for protecting metal products, devices, and parts, such as surface modification, protective agent coating, surface coating and other technologies. Among them, a layer of aluminum oxide, silicon oxide, titanium nitride, silicon carbide, diamond-like film, etc. is formed on the metal surface by spraying, physical or chemical vapor deposition methods. The above materials have low gas permeability to oxygen-containing gases such as air or water vapor. Moreover, it has good hardness, which can not only improve its oxidation resistance and barrier properties, but also improve the substrate hardness and wear resistance. For example, the patent "Alumina coating, coated products and their manufacturing method" (application number: 200580007972.2) uses chemical vapor deposition technology...

AI Technical Summary

Problems solved by technology

[0003] The above-mentioned technologies have a very wide range of applications, but for products, devices, and parts with particularly complex three-dimensional structures, PVD, CVD and other methods have serious limitations, lack of good step coverage, and cannot form uniform films on all surfaces

At the same time, for some electronic devices, the temperature required by the common CVD method is too high, which also limits its application.