Epitaxial structure of ultraviolet LED with aluminum nitride film and growth method of aluminum nitride film

Abstract

The present invention provides an epitaxial structure of an ultraviolet LED with an aluminum nitride film and a growth method of the aluminum nitride film. The growth method of the aluminum nitride film includes the following steps that: 1) a metal layer is grown on a substrate; 2) annealing treatment is performed on the substrate, so that the metal layer can form a metal ball-shaped object layer;3) etching treatment is performed on the substrate, so that a pitted substrate can be formed; 4) when temperature rises to 600 to 1200 DEG C, trimethylaluminum and ammonia gas are introduced into a reaction chamber, so that a buffer growth layer can be to grown; 5) when temperature rises to 1250 to 1450 DEG C, first growth mode/second growth mode alternate cyclic growth is carried out, so that anintermediate-state aluminum nitride layer can be formed; and 6) when temperature drops to 1100 to 1250 DEG C, the trimethylaluminum and ammonia are introduced into the aluminum nitride layer, so thatthird growth mode growth can be performed. The aluminum nitride film obtained by using the method has good crystal quality; and the surface cracks of the aluminum nitride film can be reduced.

Description

technical field [0001] The invention relates to a growth method technology of an aluminum nitride film, in particular to an epitaxial structure of an ultraviolet LED with an aluminum nitride film and a growth method thereof. Background technique [0002] Aluminum nitride (AlN) belongs to the third-generation wide bandgap semiconductor material, which has the advantages of high bandgap width, high breakdown electric field, high thermal conductivity, high electron saturation rate and high radiation resistance. Aluminum nitride crystals have a stable hexagonal wurtzite structure with a lattice constant of Aluminum nitride has the largest direct band gap of about 6.2eV among III-V non-semiconductor materials, and is an important blue and ultraviolet luminescent material. It has high thermal conductivity, high resistivity, strong breakdown field, and small dielectric coefficient. It is an excellent electronic material for high-temperature, high-frequency and high-power devices....

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Problems solved by technology

[0004] However, the quality of aluminum nitride crystals prepared by high-temperature deposition equipment is not good, and due to the large difference between the lattice constant of aluminum nitride and the lattice constant of the substrate, there is a large degree of lattice mismatch, which leads to nitridation. Aluminum surface prone to cracks

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