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Method of growing GaN-based luminescent crystalline membrane for molecular beam epitaxy

A molecular beam epitaxy, luminescent crystal technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of reducing the luminous performance of GaN crystal film, large lattice distortion, etc., to improve the luminous performance, Improve the effect of lattice distortion

Inactive Publication Date: 2010-06-23
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, from the perspective of ionic radius matching, the doping of rare earth ions will cause large lattice distortion. Undoubtedly, the generation of such lattice distortion will introduce more point defects in the crystal film, thereby reducing the Luminescent Properties of GaN Crystal Films

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] In this example, x=0.1%, y=0.01%, Re is the rare earth metal Erbium, and A is boron (B). Load the above-mentioned weighed raw materials into different evaporation cells in a molecular beam epitaxy (hereinafter referred to as MBE) device. The substrate is selected to grow sapphire with GaN film. The temperature of the Ga evaporation cell is controlled at 900℃, and the Er evaporation cell is controlled at 850 ℃, the temperature of the evaporation pond of crystal B is controlled at 900℃. And atomic nitrogen is generated by radio frequency plasma. After obtaining a 5μm thick film, naturally cool the substrate and each evaporation cell, and take out the Er after the MBE is emptied. 3+ And B 3+ Co-doped GaN crystal film. Compared to not co-doped with B 3+ Er doped at the same concentration 3+ The GaN crystal film has an enhanced fluorescence intensity of 5%-20%.

Embodiment 2

[0016] In this example, x = 10%, y = 1%, Re is the rare earth metal Erbium, and A is metal aluminum (Al). The above-mentioned weighed raw materials were loaded into different evaporation cells in the MBE device. The substrate was selected to grow silicon with GaN film. The temperature of the Ga evaporation cell was controlled at 900℃, the Er evaporation cell was controlled at 1000℃, and the metal Al evaporation cell The temperature is controlled at 980°C. And atomic nitrogen is generated by radio frequency plasma. After obtaining a 5μm thick film, naturally cool the substrate and each evaporation cell, and take out the Er after the MBE is emptied. 3+ And Al 3+ Co-doped GaN crystal film. Compared to not co-doped with Al 3+ Er doped at the same concentration 3+ The GaN crystal film has an enhanced fluorescence intensity of 5%-20%.

Embodiment 3

[0018] In this example, x = 5%, y = 0.5%, Re is the rare earth metal Er, and A is metal aluminum (Al). The above weighed raw materials were loaded into different evaporation cells in the MBE device. The substrate was selected from HVPE-grown GaN bulk. The Ga evaporation cell temperature was controlled at 900℃, the Er evaporation cell was controlled at 950℃, and the metal Al evaporation cell The temperature is controlled at 930°C. And atomic nitrogen is generated by radio frequency plasma. After obtaining a 5μm thick film, naturally cool the substrate and each evaporation cell, and take out the Er after the MBE is emptied. 3+ And Al 3+ Co-doped GaN crystal film. Compared to not co-doped with Al 3+ Er doped at the same concentration 3+ The GaN crystal film has an enhanced fluorescence intensity of 5%-20%.

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Abstract

The invention discloses a method of growing GaN-based luminescent crystalline membrane for molecular beam epitaxy, which dopes rare earth ions in the growth process to replace part of lattice site of Ga3+ and is characterized by comprising the following steps: doping III group element boron or aluminum in the raw material formula of the GaN crystalline membrane according to a certain ratio, wherein the III group element boron or aluminum enters into GaN lattice site via a mode of trivalent ion in the growth process; preparing ion radius difference between the rare earth ion and the Ga3+, wherein the molar ratio of the raw material formula is as follows: Ga:Re:A=(1-x-y):x:y, x represents rare earth metal, A represents III group element boron or aluminum, x is more than or equal to 0.1% and less than or equal to 10.0%, and y is more than or equal to 0.1x and less than or equal to x. In the invention, III group element boron or aluminum is doped with rare earth metal together according to a certain ratio so as to greatly improve lattice deformation of the GaN crystalline membrane caused by larger radius mismatch of Re3+ and Ga3+, and increase luminescent performance of the GaN crystalline membrane.

Description

Technical field [0001] The invention relates to a method for growing a GaN film material, in particular to a method for growing a GaN crystal film doped with rare earth ions by MBE. Background technique [0002] The third-generation semiconductor material GaN and its related devices have broad application prospects in the fields of optical display, optical storage, laser printing, optical lighting, and medical and military. Therefore, the third-generation semiconductor material represented by GaN is known as IT The new engine of the industry. [0003] GaN is a wide band gap semiconductor with a band gap of 3.4 eV, so various rare earth ions can be doped into GaN without luminescence quenching. The luminescence band of rare earth ions can cover the region from ultraviolet to infrared, and the luminescence transition of rare earth ions mainly occurs in the transition between partially filled 4f energy levels, which is less affected by the crystal field environment, and the luminesce...

Claims

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Application Information

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IPC IPC(8): C23C16/34C23C16/448C23C16/52
Inventor 曾雄辉徐科王建峰任国强黄凯包峰张锦平
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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