Compound semiconductor material doped with rare-earth elements and growth method thereof

A rare earth element and semiconductor technology, applied in the field of semiconductor materials, can solve the problems of reducing the luminous performance of GaN crystals and large lattice distortion, and achieve the effects of improving lattice distortion and improving luminous efficiency.
CN101775658AInactive Publication Date: 2010-07-14SUZHOU NANOWIN SCI & TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SUZHOU NANOWIN SCI & TECH
Publication Date
2010-07-14
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a compound semiconductor material doped with rare-earth elements, which is a crystal material being composed of III group elements and V group elements and doped with the rare-earth elements. The crystal material further comprises displacement adulterant which is an III group element or the combination of a plurality of III group elements, the atomic numbers of the III group elements contained in the displacement adulterant are smaller than those of the III group elements forming the crystal material, and the displacement adulterant substitutes original III group elements in crystal to form a displacement defect. The invention also provides a preparation method of the material. The invention has the advantages that the displacement defect is formed by doping elements with smaller atomic numbers in the material so as to improve the lattice deformation of the semiconductor material caused by doping the rare-earth element, thus improving the luminous efficiency of the material.
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Description

【Technical field】

[0001] The invention relates to the field of semiconductor materials, in particular to a compound semiconductor material doped with rare earth elements and a growth method thereof. 【Background technique】

[0002] The third-generation semiconductor material GaN and its related devices have broad application prospects in optical display, optical storage, laser printing, optical lighting, medical and military fields, so the third-generation semiconductor material represented by GaN is known as IT A new engine for the industry.

[0003] GaN is a wide band gap semiconductor with a band gap up to 3.4eV, so various rare earth ions can be doped into GaN without luminescence quenching. The luminescence band of rare earth ions can cover the region from ultraviolet to infrared, and the luminescence transition of rare earth ions mainly occurs between the partially filled 4f energy levels, which is less affected by the crystal field environment, the luminescence peak i...

Claims

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