Method of growing GaN-based luminescent crystalline membrane for molecular beam epitaxy

Abstract

The invention discloses a method of growing GaN-based luminescent crystalline membrane for molecular beam epitaxy, which dopes rare earth ions in the growth process to replace part of lattice site of Ga3+ and is characterized by comprising the following steps: doping III group element boron or aluminum in the raw material formula of the GaN crystalline membrane according to a certain ratio, wherein the III group element boron or aluminum enters into GaN lattice site via a mode of trivalent ion in the growth process; preparing ion radius difference between the rare earth ion and the Ga3+, wherein the molar ratio of the raw material formula is as follows: Ga:Re:A=(1-x-y):x:y, x represents rare earth metal, A represents III group element boron or aluminum, x is more than or equal to 0.1% andless than or equal to 10.0%, and y is more than or equal to 0.1x and less than or equal to x. In the invention, III group element boron or aluminum is doped with rare earth metal together according to a certain ratio so as to greatly improve lattice deformation of the GaN crystalline membrane caused by larger radius mismatch of Re3+ and Ga3+, and increase luminescent performance of the GaN crystalline membrane.

Description

technical field

[0001] The invention relates to a method for growing a GaN film material, in particular to a method for MBE growing a GaN crystal film doped with rare earth ions. Background technique

[0002] The third-generation semiconductor material GaN and its related devices have broad application prospects in optical display, optical storage, laser printing, optical lighting, medical and military fields, so the third-generation semiconductor material represented by GaN is known as IT A new engine for the industry.

[0003] GaN is a wide band gap semiconductor with a band gap up to 3.4eV, so various rare earth ions can be doped into GaN without luminescence quenching. The luminescence band of rare earth ions can cover the region from ultraviolet to infrared, and the luminescence transition of rare earth ions mainly occurs between the partially filled 4f energy levels, which is less affected by the crystal field environment, the luminescence peak is sharp, and its color...