Growth method of neodymium-doped gadolinium gallium garnet laser crystal

A laser crystal and growth method technology, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve problems such as lattice distortion, and achieve the effect of reducing dislocation density, improving radiation resistance, and improving spectral performance

Inactive Publication Date: 2006-12-27
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The problem of the problem to be solved in the present invention is to overcome the above-mentioned defective of the prior art, solve the problem caused by doping Nd 2 o 3 The lattice distortion problem caused by this problem provides a method for preparing Nd:GGG laser crystals, reduces the defect dislocation of Nd:GGG crystals, and improves the radiation resistance of Nd:GGG

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Nd:GGG crystals were grown using the above-mentioned raw material ratio and process flow, and x=0.001 and Y=0.005 were taken in the raw material ratio. Gd first 2 o 3 , Ga 2 o 3 ,Nd 2 o 3 and CeO 2 Weigh according to the above ratio, after mechanically mixing evenly, sinter in a muffle furnace at 1400°C, put into a single crystal growth furnace, vacuumize, fill with 98% nitrogen + 2% oxygen, pull speed: 2mm / h, rotate Speed: 15rpm. After growing the crystal, it was slowly lowered to room temperature, and the crystal was taken out. Tested, Nd 3+ The concentration is evenly distributed, and the dislocation density is significantly reduced through dislocation detection and spectral testing, and the radiation resistance ability is effectively improved. Spectral performance is also improved accordingly.

Embodiment 2

[0030] Nd:GGG crystals are grown by using the above-mentioned raw material ratio and process flow, and x=0.002 and Y=0.1 are taken in the raw material ratio. Gd first 2 o 3 , Ga 2 o 3 ,Nd 2 o 3 and CeO 2 Weigh according to the above ratio, mechanically mix evenly, sinter in a muffle furnace at 1500°C, put into a single crystal growth furnace, vacuumize, fill with 98% nitrogen + 2% oxygen, pulling speed: 2.5mm / h , Rotation speed: 14rpm. After growing the crystal, slowly lower to room temperature, take out the crystal, Nd 3+ The concentration is evenly distributed, and the dislocation density is significantly reduced through dislocation detection and spectral testing, and the radiation resistance ability is effectively improved. Spectral performance is also improved accordingly.

Embodiment 3

[0032] Nd:GGG crystals were grown using the above-mentioned raw material ratio and process flow, and x=0.003 and Y=0.6 were taken in the raw material ratio. Gd first 2 o 3 , Ga 2 o 3 ,Nd 2 o 3 and CeO 2 Weigh according to the above ratio, mechanically mix evenly, sinter in a muffle furnace at 1100°C, put into a single crystal growth furnace, vacuumize, fill with 98% nitrogen + 2% oxygen, pull speed: 3mm / h, Rotation speed: 16rpm, after growing the crystal, slowly lower to room temperature, and take out the crystal. Tested, Nd 3+ The concentration is evenly distributed, and the dislocation density is significantly reduced through dislocation detection and spectral testing, and the radiation resistance ability is effectively improved. Spectral performance is also improved accordingly.

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Abstract

The Nd doped gadolinium gallium garnet laser (Nd:GGG) crystal has the material including gadolinium oxide, gallium oxide, neodymium oxide and cerium oxide in certain proportion prepared in two-step composing process. The Nd doped gadolinium gallium garnet laser crystal is grown in a Czochrolski process under the 98 % N2+2% O2 condition. The present invention solves the problem of doping Nd2O3 to cause lattice deformation, and the Nd:GGG crystal has raised radiation resistance and improved spectral and laser performance.

Description

technical field [0001] The present invention relates to doped neodymium gadolinium gallium garnet (Nd 3+ :Gd 3 Ga 5 o 12 Laser crystal, hereinafter referred to as: Nd:GGG, especially a growth method of neodymium-doped gadolinium-gallium garnet laser crystal. Background technique [0002] High-power solid-state lasers have a series of strict requirements for laser crystals: large absorption and emission cross-sections, small Stokes shift, long fluorescence lifetime, high thermodynamic properties, and the ability to grow into large-sized crystals with high optical quality. The main problem faced by high-power solid-state lasers is thermal damage during the pumping process. Even with diode pumping, a significant portion of the heat is absorbed by the laser medium, causing thermal lensing, mechanical stress, and other effects. [0003] Nd:GGG is easy to grow under a flat solid-liquid interface, there are no other impurities and stress centers, the entire cross-section can b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/28C30B15/00
Inventor 姜本学赵志伟徐晓东宋平新徐军王晓丹
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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