Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of in-plane anisotropy Bi-substituted garnet magneto-optic single crystal thin film

An anisotropic, single-crystal thin film technology, applied in the field of materials, can solve the problems of high conversion efficiency, large bandwidth, and impossibility, and achieve the effect of improving film quality, high stability, and good temperature stability

Inactive Publication Date: 2015-08-05
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The films produced by the magnetron sputtering process have obvious Faraday effect and can be applied to various magneto-optical devices, but as far as magneto-optic modulators are concerned, they cannot achieve high conversion efficiency and large bandwidth

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of in-plane anisotropy Bi-substituted garnet magneto-optic single crystal thin film
  • Preparation method of in-plane anisotropy Bi-substituted garnet magneto-optic single crystal thin film
  • Preparation method of in-plane anisotropy Bi-substituted garnet magneto-optic single crystal thin film

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0022] A preparation method of an in-plane anisotropic Bi-generation garnet magneto-optical single crystal film, comprising the following steps:

[0023] Step 1. Formula, ingredients:

[0024] Formula is Bi x Lu 3-x IG, according to the best matching relationship, take x as 0.9; this implementation example uses lead-free epitaxy, with Lu2O3, Bi2O3, Fe2O3 as raw materials, that is, melt, Bi2O3 as flux, CaO as additive, R0=1, R1= 0.1294, R2=0.1751, R3=0.01; the ratio of each component is determined according to the ratio, the amount of each raw material is determined according to the weight specific gravity and the total quality, the specific gravity of Bi2O3, Lu2O3, Fe2O3, CaO is 92.195%, 1.898%, 5.886 %, 0.021%, the total amount is 6000g; because the volume of the powder is larger than the volume of the melt and the size of the crucible is fixed, the material should be added to the crucible several times, and the method of adding material, melting, cooling, and refilling is ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention aims to provide a preparation method of an in-plane anisotropy Bi-substituted garnet magneto-optic single crystal thin film. The method is used for application of a TE-TM (Transverse Electric-Transverse Magnetic) light mode conversion modulator. A liquid-phase epitaxial process is adopted to realize growth of Bi ion and Lu ion codoped single crystal garnet (BiLuIG) on a gadolinium gallium garnet substrate (orientation of being <111>), a melt reaches the growth temperature of the thin film through a mixing, temperature rising-thermal insulation-triple cooling method, and the growth process of the thin film is controlled to finally prepare the in-plane anisotropy Bi-substituted garnet magneto-optic single crystal thin film. For the growth of the thin film, the three-step cooling mode can achieve good temperature stability and melt state stability. The in-plane anisotropy Bi-substituted garnet magneto-optic single crystal thin film is prepared, the preparation process is simple, and the stability is high.

Description

technical field [0001] The invention belongs to the technical field of materials, and relates to a preparation method of a Bi-generation garnet magneto-optical single crystal film material with in-plane anisotropy. Background technique [0002] In recent years, with the development of technology, the manufacturing process of materials has been continuously improved. Compared with the existing magnetron sputtering process, PLD process and sol-gel method, the traditional liquid phase epitaxy process (LPE) is more effective in the preparation of single crystal thin films. has an irreplaceable role. As far as magneto-optical materials are concerned, the application of Bi-generation garnet magneto-optic single crystal thin film materials in integrated magneto-optic devices, such as magneto-optical isolators, magneto-optical switches and magneto-optic modulators, is increasing. The films produced by the magnetron sputtering process have obvious Faraday effect and can be applied t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B11/00C30B29/28C30B29/64
Inventor 杨青慧田晓洁张怀武饶毅恒文岐业贾利军范仁钰
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com