Preparation method of gadolinium gallium garnet planar interface crystal

A technology of gadolinium gallium garnet and flat interface, which is applied in the field of optical crystals, can solve problems such as crystal quality deterioration, uneven lattice constant, and affecting the optical quality of epitaxial substrates, and achieve uniform stress and good internal quality.

Active Publication Date: 2008-12-10
成都东骏激光股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the physical and chemical properties of the melt and the thermal conductivity of the crystal, the GGG crystal is prone to a natural conversion of the solid-liquid interface from convex to flat during the growth process, and this conversion process of the solid-liquid interface is often accompanied by strong liquid flow. and temperature changes, resulting in deterioration of the internal quality of the crystal, or ev

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] A preparation method of gadolinium gallium garnet flat interface crystal, according to the following molar ratio,

[0030] Raw material Mole (mol)

[0031] Gd 2 o 3 3(1-x / 3)

[0032] Ga 2 o 3 5(1.02-y / 5-z / 5)

[0033] CaO 2x

[0034] MgO2y

[0035] ZrO 2 2z

[0036] Among them, select x=0.32, y=0.33, z=0.65.

[0037] Weigh the Gd with a purity of 4.5N according to the above ratio 2 o 3 , Ga 2 o 3 And analytically pure CaO, MgO, ZrO 2 , mixed evenly, and put into a multi-layer latex bag, pressed by a cold isostatic press, and sintered at 1200°C for 10 hours; put into a single crystal furnace, evacuated to ≤10Pa, filled with argon, Heat until the raw materials are melted, fill with oxygen (the partial pressure ratio of oxygen and argon is 1:99), and open the gas flow device. Set the rotation speed of the crystal rod to 8rpm, and the pulling speed to 1.0mm / h. The crystal is automatically seeded in the single crystal furnace,...

Embodiment 2

[0047] A preparation method of gadolinium gallium garnet flat interface crystal, according to the following molar ratio,

[0048] Raw material Mole (mol)

[0049] Gd 2 o 3 3(1-x / 3)

[0050] Ga 2 o 3 5(1.02-y / 5-z / 5)

[0051] CaO 2x

[0052] MgO2y

[0053] ZrO 2 2z

[0054] Choose x=0.38, y=0.39, z=0.77.

[0055] Gd with a purity of 4.5N weighed according to the above ratio 2 o 3 , Ga 2 o 3 And analytically pure CaO, MgO, ZrO 2 , uniformly mixed, pressed and formed, sintered at 1100°C for 15 hours, loaded into a single crystal furnace, evacuated to a furnace pressure ≤ 10Pa, filled with argon, heated until the raw materials melted, filled with oxygen (the partial pressure ratio of oxygen and argon is 2:98), turn on the gas flow device. Set the rotation speed of the crystal rod to 12rpm, and the pulling speed to 2.5mm / h. The crystal is automatically seeded in the single crystal furnace and placed on the shoulder and turned to grow on the equi...

Embodiment 3

[0065] A preparation method of gadolinium gallium garnet flat interface crystal, according to the following molar ratio,

[0066] Raw material Mole (mol)

[0067] Gd 2 o 3 3(1-x / 3)

[0068] Ga 2 o 3 5(1.02-y / 5-z / 5)

[0069] CaO 2x

[0070] MgO2y

[0071] ZrO 2 2z

[0072] Choose x=0.45, y=0.46, z=0.91.

[0073] Weigh the Gd with a purity of 4.5N according to the above ratio 2 o 3 , Ga 2 o 3 And analytically pure CaO, MgO, ZrO 2 , uniformly mixed, press-molded, sintered at 1300°C for 12 hours, loaded into a single crystal furnace, evacuated to a furnace pressure ≤ 10Pa, filled with argon, heated until the raw materials melted, filled with oxygen (the partial pressure ratio of oxygen and argon is 3:97), turn on the gas flow device. Set the rotation speed of the crystal rod to 10rpm, and the pulling speed to 1.5mm / h. The crystal is automatically seeded in the single crystal furnace and placed on the shoulder and turned to grow on the...

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PUM

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Abstract

The invention discloses a method for preparing a gadolinium gallium garnet(GGG)planar interface crystal, belonging to the optical crystal technical field. The method comprises the following steps that: CaO and/or MgO and ZrO2 are doped in a raw material formula of the GGG crystal and a manual control interface converting technology method is used so that the planar interface doped large lattice parameter GGG crystal with good stress and internal quality is grown, The calcium-magnesium-zirconium doped large lattice parameter GGG planar interface crystal with a diameter more than 2 inches and a length more than 120 millimeters is grown by the method. The crystal has good internal quality, even stress, and zero dislocation, does not observe any scattering particle under the He-Ne light, has a lattice parameter of between 12.383 and 12.620, and the change in the crystal head and tail lattice parameters is within 10<-2>. The method is particularly suitable for the large lattice parameter (Ca, Mg and Zr):GGG crystal growth field of an epitaxial substrate.

Description

technical field [0001] The invention relates to an optical crystal, in particular to the technical field of a doped GGG crystal used for a magneto-optical device and a magnetic bubble domain storage device. Background technique [0002] Bismuth-doped and other doped iron-like garnet (Bi:RIG) epitaxial single crystal thin film, because it has larger lattice constant, low saturation magnetic field, and good temperature stability than traditional yttrium-iron garnet (YIG) It is considered to be the best magneto-optical material currently used in optical communication technology. However, due to the increase of its lattice constant (generally in the above), the pure gadolinium gallium garnet (GGG) crystal as the epitaxial substrate material of the traditional YIG single crystal thin film has a small lattice constant It is no longer suitable for the requirements of the epitaxial substrate of the iron-like garnet single crystal thin film. The calcium-magnesium-zirconium-doped...

Claims

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Application Information

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IPC IPC(8): C30B29/28C30B15/00
Inventor 石全洲王国强周世斌肖兵徐斌
Owner 成都东骏激光股份有限公司
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