19 results about "Magnon" patented technology

Provided is a magnetoresistive storage device based on a topological spin material. The magnetoresistive storage device comprises: a spin-orbit coupling layer, which is made of a topological insulator and used for generating a spin current; a nickel oxide layer, which is formed on the spin-orbit coupling layer; an interface layer, which is formed on the nickel oxide layer; and a magnetic tunnel junction, which is formed on the interface layer and comprises ferromagnetic layers that are formed on the upper and lower sides of a barrier layer. The spin current is transmitted in the nickel oxide layer in the form of magnons and then acts on the ferromagnetic layers, and the interface layer is used for enhancing the anisotropy of the ferromagnetic layers.

The invention provides a microwave phase measurement system based on magneton-photon coupling characteristics. According to the system, an integrated electrode support / GGG / YIG / Pt multilayer structure is embedded in a microwave cavity, and magnetons carry microwave phase information through coupling of the magnetons and photons in the YIG. Magneton precession of the YIG layer causes spin current to be generated in the Pt layer, the spin current is converted into measurable voltage signals through inverse spin Hall effect, and high-resolution phase measurement is realized by means of frequency mixing, coherent detection and the like. The method is high in anti-interference capability, can realize high-sensitivity and low-cost microwave phase measurement, and is expected to be used in the fields of spintronics, microwave measurement, quantum information reading and the like.

The present invention provides a voltage-controlled three-terminal magnon transistor, comprising a ferroelectric layer, a magnetic layer, a generation terminal, a control terminal, a detection terminal, and a bottom electrode, wherein the generation terminal generates magnons in the magnetic layer when the current is introduced; the detection terminal is made of a heavy metal material, and can convert the magnons in the magnetic layer into a charge flow; and when a voltage pulse applied between the control terminal and the bottom electrode exceeds a critical value, the non-volatile electric polarization and the non-volatile strain state of the ferroelectric layer are changed, so that the transmission capability of the magnons in the magnetic layer is affected by the magnetoelectric coupling effect between the ferroelectric layer and the magnetic layer, and a voltage signal of the detection terminal shows a regular loop change behavior as the voltage pulse changes. Furthermore, also disclosed in the present invention are a control method and preparation method for the device. The three-terminal magnon transistor disclosed in the present invention can work in a wide temperature range including room temperature, has a high on-off ratio and is non-volatile.

A voltage-controlled three-terminal magnon transistor is provided, including a ferroelectric layer, a magnetic layer, a generation terminal, a control terminal, a detection terminal, and a bottom electrode. After a current is inputted into the generation terminal, a magnon is generated in the magnetic layer. The detection terminal is made of a heavy metal material, which can convert the magnon in the magnetic layer into a charge flow. When a voltage pulse applied between the control terminal and the bottom electrode exceeds a critical value, non-volatile polarization and non-volatile strain states of the ferroelectric layer change, which in turn affects a transmission capability of the magnon in the magnetic layer based on a magnetoelectric coupling effect between the ferroelectric layer and the magnetic layer. In addition, a voltage signal of the detection terminal exhibits a regular loop change behavior with a change of the voltage pulse.

The present invention relates to an alternating magnetic field sensitive detection device and method based on sideband regulation of a resonator-magnon coupling system, comprising: a microwave source, a superconducting resonator, a YIG sphere, a filter, two signal amplifiers, a rectifying diode, a permanent magnet, and a signal readout system; the present invention realizes signal amplification of an alternating magnetic field through the resonator-magnon coupling system; realizes sensitive detection of an alternating magnetic field, and the detection sensitivity reaches pT / √Hz. The present invention utilizes a coupling system composed of a resonator and a magnetic material to develop a weak magnetic field sensitive detection device and method that can operate at liquid nitrogen temperature or room temperature and whose sensitivity is independent of size.

The disclosure provides a topological spin material-based magnetic resistance storage device, comprising: a spin-orbit coupling layer, a material being a topological insulator, for generating a spin current; a nickel oxide layer formed on the spin-orbit coupling layer; an interface layer formed on the nickel oxide layer; and a magnetic tunnel junction formed on the interface layer, comprising ferromagnetic layers formed on both sides of a barrier layer; the spin current acts on the ferromagnetic layers in the form of magnons after being transmitted in the nickel oxide layer, and the interface layer is used for enhancing anisotropy of the ferromagnetic layers.

The invention provides a method and a device for exciting terahertz magnetons by an electric field. The method comprises the following steps: applying an electric field to a pre-constructed magneton generator to instantaneously jump voltage from a first value to a second value; in the jump process, a magnetic domain wall area in the magneton generator excites THz spin waves which take a domain wall as a center and are symmetrically propagated to two sides. According to the invention, the discontinuous changing electric field is applied to the magneton generator, so that THz spin waves are excited in a magnetic domain wall area, the risk of thermal damage caused by high-energy laser or large current is avoided, low-energy-consumption and high-efficiency excitation is realized, and meanwhile, due to the fact that an electric field regulation and control mode has the characteristics of high controllability and easiness in local modulation, the THz spin waves can be excited in the magnetic domain wall area. The technology can realize dynamic regulation and control of magneton frequency and amplitude, thereby providing a more convenient, reliable and efficient new method for integration and design of high-frequency spinning electronic devices.

The present invention discloses a method and application for generating a frequency comb based on superstrong coupling of magnons and magnons, which belongs to the field of spin electronics technology. In a system of two superstrongly coupled magnons, when a pumping magnetic field with a frequency close to the frequency of the high-frequency branch magnon is applied, the system enters a nonlinear state. According to the amplitude of the pumping magnetic field, the system presents a frequency comb, period-doubling bifurcation and chaotic frequency comb. As the strength of the magnon-magnon coupling increases, the nonlinearity of the system is significantly enhanced, thereby reducing the demand for external power. Unlike traditional methods that rely on the weak nonlinearity of the material itself and require high power density to exceed the starting threshold, the superstrong coupling system provides an ideal platform for studying chaotic frequency combs. Chaotic systems have high sensitivity and noise resistance, and play an important role in signal detection. The present invention provides a new idea for the application of the magnon-magnon coupling mechanism in the fields of high-precision frequency measurement, information processing and sensitive detection.

A rare-earth-doped antiferromagnetic crystal is disclosed, designed to achieve long optical coherence times and enable coherent coupling between optical and magnon modes. The crystal includes a host lattice, such as gadolinium vanadate, gadolinium oxide, or gadolinium silicate, which is antiferromagnetic below a Néel temperature and is doped with a second rare-earth ion, such as erbium. By operating at cryogenic temperatures, electron spins in the host are magnetically ordered, providing a quiet magnetic environment that minimizes decoherence for the dopant ions. The system achieves long optical coherence times for the rare-earth dopant ions, supporting robust quantum memory and communication. Additionally, coherent coupling between the optical transitions of the dopant and magnon modes of the host enables efficient microwave-to-optical quantum transduction. Isotopic purification of the host and / or dopant ions can further reduce nuclear spin noise, enhancing coherence times.

Provided are a negative refraction implementation method using photon-magnon coupling and a control method therefor. The negative refraction implementation method of the present invention is a method of implementing negative refraction based on photon-magnon coupling using a photon-magnon hybrid system, wherein the photon-magnon hybrid system includes a dielectric layer including a first surface, and a second surface opposite to the first surface, a microstrip line disposed on the first surface and extending along a lengthwise direction, a first layer disposed on the second surface to excite a photon mode, and a second layer disposed on the microstrip line to excite a magnon mode, and wherein a negative refractive index signal is obtained due to photon-magnon coupling between the first and second layers.

A method for tuning the frequency of terahertz radiation is provided. The method utilizes a device comprising a spin injector, a tunneling junction coupled to the spin injector, and a ferromagnetic material coupled to the tunneling junction. The ferromagnetic material comprises a magnon gain medium (MGM). The method comprises the step of applying a bias voltage to shift the Fermi level of the spin injector relative to the Fermi level of the ferromagnetic material to initiate the generation of non-equilibrium magnons by injecting a minority of electrons into the magnon gain medium. The method also comprises tuning the frequency of the generated terahertz radiation by changing the value of the bias voltage.

The invention particularly relates to a method for regulating and controlling twisted spin waves in a cylindrical magneton crystal, and belongs to the field of spintronics. According to the scheme, a ferromagnetic cylindrical magneton crystal with periodical modulation magnetocrystalline anisotropy is constructed, theoretical analysis is carried out on a magnetic oscillator energy band structure of the ferromagnetic cylindrical magneton crystal, and it is shown that twisted spin waves with any orbital angular momentum have the magnetic oscillator band gap characteristic at the boundary of a Brillouin region. By accurately regulating and controlling parameters such as magnetocrystalline anisotropy strength or a magneton crystal lattice constant, effective tuning of the band gap position and width of the twisted spin wave can be realized, and further accurate control of the propagation behavior of the twisted spin wave can be realized. The method has important significance for realizing high-capacity information transmission and processing based on the twisted spin wave.

A voltage-controlled three-terminal magnon transistor is provided, including a ferroelectric layer, a magnetic layer, a generation terminal, a control terminal, a detection terminal, and a bottom electrode. After a current is inputted into the generation terminal, a magnon is generated in the magnetic layer. The detection terminal is made of a heavy metal material, which can convert the magnon in the magnetic layer into a charge flow. When a voltage pulse applied between the control terminal and the bottom electrode exceeds a critical value, non-volatile polarization and non-volatile strain states of the ferroelectric layer change, which in turn affects a transmission capability of the magnon in the magnetic layer based on a magnetoelectric coupling effect between the ferroelectric layer and the magnetic layer. In addition, a voltage signal of the detection terminal exhibits a regular loop change behavior with a change of the voltage pulse.

Disclosed are a magnon junction, magnon random access memory, microwave oscillator and detector, and electronic device. The magnon junction comprises: a first electrode layer formed by non-magnetic conductive material; a free magnetic layer arranged on the first electrode layer, formed by ferromagnetic conductive material; an antiferromagnetic barrier layer arranged on the free magnetic layer, formed by antiferromagnetic insulator material; a reference magnetic layer arranged on the antiferromagnetic barrier layer, formed by ferromagnetic conductive material; and a second electrode layer arranged on the reference magnetic layer, formed by non-magnetic conductive material. The reference magnetic layer has perpendicular magnetic anisotropy or perpendicular magnetic moment component, moment direction of which is fixed along a vertical direction; the free magnetic layer has perpendicular magnetic anisotropy or a perpendicular magnetic moment component, moment direction of which is flippable along the perpendicular direction; the antiferromagnetic barrier layer has perpendicular magnetic anisotropy or perpendicular magnetic moment component.

The application discloses a cavity-magnon coupling-based microwave isolator device with adjustable isolation, and relates to the microwave isolator field.The device comprises a quadrupole microstrip line resonant cavity, a yttrium iron garnet ball, a power divider, a first complex amplitude adjusting device and a second complex amplitude adjusting device;an external magnetic field is applied at the yttrium iron garnet ball, so that the magnon mode frequency generated by the yttrium iron garnet ball is consistent with the cavity mode frequency, forming a cavity mode-magnon-cavity mode coupling configuration;the power divider divides the input signal into two paths, and the two paths of input signals are adjusted in complex amplitude by the first complex amplitude adjusting device and the second complex amplitude adjusting device;the quadrupole microstrip line resonant cavity outputs the output signal with the required isolation of the scene under the cavity mode-magnon-cavity mode coupling configuration according to the two paths of input signals after the complex amplitude adjustment ratio.The application can realize the adjustment of the isolation by controlling the complex amplitude ratio of the input signal, and meet the requirements of various application scenes.

A nanodevice provides for electric-field control of magnon-QSD interactions. The nanodevice includes a ferroelectric substrate, a ferromagnetic material disposed over the ferroelectric substrate, and a nanodiamond including an ensemble of nitrogen-vacancy (NV) spins, each NV magnetically interfacing with the ferromagnetic material. An electric field is measured by applying a voltage across the ferroelectric substrate and the ferromagnetic material, changing a magnon excitation spectrum of the ferromagnetic material with respect to an electron spin resonance frequency of the ensemble of NV spins, and measuring a relaxation rate of the ensemble of NV spins.

Embodiments provide active beam steering in an extreme sub-wavelength nano-antenna using directed surface acoustic waves (SAWs). A SAW launched in the substrate excites resonant spin waves in the nanomagnets of a nanomagnet array at specific (GHz) frequencies via magnon-phonon coupling, which radiate electromagnetic waves at those frequencies via magnon-photon coupling. These specific frequencies are determined by the size and the shape of the nanomagnets and hence can be altered by changing the size and / or the shape. Normally, one would expect such an ultrasmall antenna to behave as a point source that radiates isotropically. Surprisingly, it does not because of the intrinsic anisotropy in the phonon-magnon and magnon photon coupling in this system. The radiation pattern (both elevation and azimuthal) is anisotropic. By changing the direction of SAW propagation, one can change the pattern. A multiphase clock excites the electrodes pairwise sequentially to scan the beam electronically, thereby realizing the function of an active electronically scanned array (AES A).

A spin wave logic device and related circuits. The spin wave logic device includes a channel, and a drain and source located above the channel. The source is used to generate a spin wave signal. The channel is used to transmit the spin wave signal to the drain. The drain includes a magnetic tunnel junction or a spin valve structure, and is used to exhibit different resistance states based on the spin wave signal, wherein the different resistance states are used to indicate different logical values. The spin wave logic device can detect magnon signals through tunneling magnetoresistance or giant magnetoresistance, preventing information loss after power failure and achieving effective storage of magnon information.

The present application provides a novel magnetoelectric coupling memory and a preparation method. The novel magnetoelectric coupling memory sequentially comprises, from top to bottom: a substrate, a bottom electrode metal, a magnon transport layer, a first metal electrode, a spin current injection structure, a plurality of gates, and a spin current detection structure; the bottom electrode metal is arranged on the substrate; the magnon transport layer and the first metal electrode are arranged on the bottom electrode metal; and the spin current injection structure, the plurality of gates, and the spin current detection structure are sequentially arranged on the magnon transport layer along a magnon transport direction, wherein the first metal electrode and any one of the gates form an apparatus for writing information, and the spin current injection structure, the magnon transport layer, a gate for reading, and the spin current detection structure form an apparatus for reading information. The technical solution provided in the present application can realize information reading and writing in a memory by using magnons.