5 results about "Magnon" patented technology

Provided is a magnetoresistive storage device based on a topological spin material. The magnetoresistive storage device comprises: a spin-orbit coupling layer, which is made of a topological insulator and used for generating a spin current; a nickel oxide layer, which is formed on the spin-orbit coupling layer; an interface layer, which is formed on the nickel oxide layer; and a magnetic tunnel junction, which is formed on the interface layer and comprises ferromagnetic layers that are formed on the upper and lower sides of a barrier layer. The spin current is transmitted in the nickel oxide layer in the form of magnons and then acts on the ferromagnetic layers, and the interface layer is used for enhancing the anisotropy of the ferromagnetic layers.

The invention provides a microwave phase measurement system based on magneton-photon coupling characteristics. According to the system, an integrated electrode support / GGG / YIG / Pt multilayer structure is embedded in a microwave cavity, and magnetons carry microwave phase information through coupling of the magnetons and photons in the YIG. Magneton precession of the YIG layer causes spin current to be generated in the Pt layer, the spin current is converted into measurable voltage signals through inverse spin Hall effect, and high-resolution phase measurement is realized by means of frequency mixing, coherent detection and the like. The method is high in anti-interference capability, can realize high-sensitivity and low-cost microwave phase measurement, and is expected to be used in the fields of spintronics, microwave measurement, quantum information reading and the like.

A rare-earth-doped antiferromagnetic crystal is disclosed, designed to achieve long optical coherence times and enable coherent coupling between optical and magnon modes. The crystal includes a host lattice, such as gadolinium vanadate, gadolinium oxide, or gadolinium silicate, which is antiferromagnetic below a Néel temperature and is doped with a second rare-earth ion, such as erbium. By operating at cryogenic temperatures, electron spins in the host are magnetically ordered, providing a quiet magnetic environment that minimizes decoherence for the dopant ions. The system achieves long optical coherence times for the rare-earth dopant ions, supporting robust quantum memory and communication. Additionally, coherent coupling between the optical transitions of the dopant and magnon modes of the host enables efficient microwave-to-optical quantum transduction. Isotopic purification of the host and / or dopant ions can further reduce nuclear spin noise, enhancing coherence times.

The invention particularly relates to a method for regulating and controlling twisted spin waves in a cylindrical magneton crystal, and belongs to the field of spintronics. According to the scheme, a ferromagnetic cylindrical magneton crystal with periodical modulation magnetocrystalline anisotropy is constructed, theoretical analysis is carried out on a magnetic oscillator energy band structure of the ferromagnetic cylindrical magneton crystal, and it is shown that twisted spin waves with any orbital angular momentum have the magnetic oscillator band gap characteristic at the boundary of a Brillouin region. By accurately regulating and controlling parameters such as magnetocrystalline anisotropy strength or a magneton crystal lattice constant, effective tuning of the band gap position and width of the twisted spin wave can be realized, and further accurate control of the propagation behavior of the twisted spin wave can be realized. The method has important significance for realizing high-capacity information transmission and processing based on the twisted spin wave.

The present application provides a novel magnetoelectric coupling memory and a preparation method. The novel magnetoelectric coupling memory sequentially comprises, from top to bottom: a substrate, a bottom electrode metal, a magnon transport layer, a first metal electrode, a spin current injection structure, a plurality of gates, and a spin current detection structure; the bottom electrode metal is arranged on the substrate; the magnon transport layer and the first metal electrode are arranged on the bottom electrode metal; and the spin current injection structure, the plurality of gates, and the spin current detection structure are sequentially arranged on the magnon transport layer along a magnon transport direction, wherein the first metal electrode and any one of the gates form an apparatus for writing information, and the spin current injection structure, the magnon transport layer, a gate for reading, and the spin current detection structure form an apparatus for reading information. The technical solution provided in the present application can realize information reading and writing in a memory by using magnons.