Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Gadolinium illinium scandium gallium garnet crystal GYSGG and its smelt method crystal growth method

A technology of gallium garnet and crystal growth, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of large crystal stress and so on

Active Publication Date: 2008-11-19
ZHONGKE JIUYAO TECH CO LTD
View PDF0 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the doping of Ca, Mg, and Zr ions will cause a lot of stress in the crystal, which brings certain problems to growth, processing, and use.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] The specific instructions are as follows:

[0016] 1. The present invention is gadolinium yttrium scandium gallium garnet crystal GYSGG, and the molecular formula of the inventive compound can be expressed as Gd 3x Y 3(1-x) sc 2 Ga 3(1+δ) o 12 , where the value of x ranges from 0 to 1, and the value of δ can be positive or negative, ranging from -0.1 to 0.1.

[0017] 2, the present invention comprises the melt method crystal growth method of GYSGG crystal, comprises the following steps:

[0018] (1), the batching method of GYSGG crystal growth raw materials:

[0019] A. Using Gd 2 o 3 、Sc 2 o 3 , Y 2 o 3 , Ga 2 o 3 As a raw material, carry out batching according to the following compound formula:

[0020] 1.5xGd 2 o 3 +1.5(1-x)Y 2 o 3 +Sc 2 o 3 +(1.5+δ)Ga 2 o 3 →Gd 3x Y 3(1-x) sc 2 Ga 3(1+δ) o 12

[0021] B. Raw material Gd used 2 o 3 , Y 2 o 3 、Sc 2 o 3 , Ga 2 o 3 Corresponding gadolinium, yttrium, scandium, gallium and other compoun...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a gadolinium yttrium scandium gallium garnet crystal (GYSGG) and a crystal growth method by a melt method thereof. The molecular formula of the crystal can be expressed as Gd3xY3(1-x)Sc2Ga3(1+delta)O12 (the x is equal to between 0 and 1 or between -0.2 and 0.2); Gd2O3, Y2O3, Sc2O3 and Ga2O3, or corresponding other compounds of gadolinium, yttrium, scandium, and gallium canbe used to perform the material mixing, and the premise is that the Gd3xY3(1-x)Sc2Ga3(1+delta)O12 is produced; prepared raw materials are subject to the perfect mixing, press forming and high temperature sintering, and then become an initial raw material of crystal growth; the initial raw material of the growth is placed into a crucible, is heated to fully melt down, and then becomes an initial melt of the growth by the melt method, and then melt methods such as a pulling method, a crucible descending method or a temperature gradient method as well as other melt methods can be used for the growth; for the melt method which needs seed crystals to directionally grow, the seed crystals are GYSGG monocrystals or yttrium scandium gallium garnet (YSGG) monocrystals or gadolinium scandium gallium garnet (GSGG) monocrystals. The GYSGG monocrystals can be used as a substrate material of a Bi3+-doped yttrium iron garnet epitaxial film.

Description

technical field [0001] The invention relates to the field of epitaxial film substrate material and crystal growth, in particular to gadolinium yttrium scandium gallium garnet and its crystal growth method by melt method. technical background [0002] Bismuth-doped yttrium iron garnet Bi:YIG is a magneto-optic thin film material with better properties than pure yttrium iron garnet YIG. Because the lattice parameter of pure GGG crystal is very matched with that of YIG, which is 1.2376nm, GGG crystal is an ideal substrate material for YIG epitaxial thin film. Bi 3+ After doping YIG, the lattice parameters of YIG become larger. If GGG is used as its substrate material, there will be a large lattice mismatch between the Bi:YIG film and the substrate GGG, which will affect the film's properties. Manufacture, quality and performance, etc. will be adversely affected. At this time, it is necessary to select a suitable substrate material with a larger lattice parameter than the GGG...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/28C30B11/00C30B15/00
Inventor 张庆礼殷绍唐孙敦陆刘文鹏丁丽华谷长江李为民秦清海万松明
Owner ZHONGKE JIUYAO TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com