Chromium and ytterbium sensitized ions co-doped holmium ion activated gadolinium gallium garnet novel laser crystal

A technology of gadolinium gallium garnet and laser crystal, applied in the field of laser crystal materials, can solve the problems of less research on laser crystal, no research report on laser performance, low thermo-optic effect, etc.

Inactive Publication Date: 2011-07-27
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Application Information

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Problems solved by technology

[0006] 2. Low thermo-optic effect:
[0020] Obviously, GGG is an excellent laser host crystal, but the focus of current research is mainly on Nd-activated high-power heat-capacity laser crystals. For other active ion-doped Gd 3 Ga 5 o 12 Laser c...

Method used

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  • Chromium and ytterbium sensitized ions co-doped holmium ion activated gadolinium gallium garnet novel laser crystal
  • Chromium and ytterbium sensitized ions co-doped holmium ion activated gadolinium gallium garnet novel laser crystal
  • Chromium and ytterbium sensitized ions co-doped holmium ion activated gadolinium gallium garnet novel laser crystal

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Embodiment 1

[0028] Embodiment one: Cr:Yb:Ho:Gd 3 Ga 5 o 12 Crystal Growth Preparation

[0029] The instrument used for crystal pulling method growth is DJL-400 intermediate frequency pulling furnace, and the model of intermediate frequency power supply is KGPF25-0.3-2.5. Use Pt / Pt-Rh thermocouple and type 815EPC ohmmeter for temperature control. The crucible used is an iridium crucible of Φ55mm×30mm, and the raw material used is 4N grade Gd 2 o 3 , Ga 2 o 3 、Cr 2 o 3 , Yb 2 o 3 、Ho 2 o 3 . Prepare raw materials according to the following chemical reaction formula:

[0030] (3-y-z)Gd 2 o 3 +(5-x)Ga 2 o 3 +xCr 2 o 3 +yYb2 o 3 +zHo 2 o 3 →2Gd (3-y-z) Yb y Ho z Ga (5-x) Cr x o 12

[0031] x=0.1~5at%; y=1~15at%; z=0.1~5at%. Mix the raw materials evenly, press them into flakes, put them into a platinum crucible, put them into a common sintering furnace, slowly raise the temperature to 1080°C at 150°C / h, keep for 48h, repeat this process, and then put them into a h...

Embodiment 2

[0033] Embodiment two: Cr:Yb:Ho:Gd 3 Ga 5 o 12 Crystal Laser Experiments

[0034] Processing and bonding to produce high-quality Cr:Yb:Ho:Gd with a size of φ5mm×(60mm~80mm) 3 Ga 5 o 12 Crystal devices, using a xenon lamp as a pump source for laser experiments. The experimental device is attached figure 1 shown. 1 in the figure is a rod-shaped Cr:Yb:Ho:Gd 3 Ga 5 o 12 Crystal; 2 is a xenon lamp pump source; 3 is a dielectric mirror that totally reflects a specific wavelength in the λ=2.6-3.1 μm band; 4 is a dielectric mirror that partially transmits a specific wavelength in the λ=2.6-3.1 μm band ; 5 is the LPE-1A laser energy meter.

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Abstract

The invention discloses a chromium and ytterbium sensitized ions co-doped holmium ion activated gadolinium gallium garnet novel laser crystal, and relates to the field of laser crystal materials. The crystal material has the chemical formula of Cr:Yb:Ho:Gd3Ga5O12. Gd2O3, Ga2O3, Cr2O3, Yb2O3 and Ho2O3 of 4N are adopted as raw materials, a Cr:Yb:Ho:Gd3Ga5O12 raw material is obtained through high temperature solid-phase reaction, and crystals are grown through a Czochralski method. The material is used for realizing output of laser in a wave band of 2.6-3.1 mu m.

Description

technical field [0001] The invention relates to the field of laser crystal materials. Background technique [0002] The 2.6~3.1μm laser band covers the absorption peak of water (near 2.7μm), so the penetration depth to the tissue is shallow, and it is safe to the human body. In addition, it can be transmitted by optical fiber, so it has become a good surgical light source in medicine. In addition, solid-state lasers in this band also have important research prospects in remote sensing, environmental protection, and optical communications. At the same time, it is also an ideal pumping source for obtaining optical parametric oscillators in the mid-to-far infrared band. Therefore, since the 1960s, people have focused on how to improve the output power and efficiency of 2.6~3.1μm band lasers, from materials to devices. In addition, the 2.6~3.1μm band laser also has broad application prospects in industry, agriculture and national economic construction. Once successfully develo...

Claims

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Application Information

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IPC IPC(8): C30B29/28
Inventor 王燕涂朝阳游振宇李坚富朱昭捷
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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