Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Magnon crystal magnetic sensor and preparation method thereof

A magnetic sensor and magnon technology, applied in the field of magnetic sensing, can solve the problems of easy damage, irregular etching patterns, high cost, etc., and achieve the effects of improving temperature stability, simple preparation process, and simple method

Active Publication Date: 2019-05-28
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Dry etching is ion etching, which has problems such as high cost and easy damage to YIG; chemical wet etching first obtains patterns through photolithography, and then uses chemical reagents to etch, which has poor stability and irregular etching patterns And other problems, the above problems will affect the performance of the magnon crystal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnon crystal magnetic sensor and preparation method thereof
  • Magnon crystal magnetic sensor and preparation method thereof
  • Magnon crystal magnetic sensor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] A method for preparing a magnon crystal magnetic sensor, specifically comprising the following steps:

[0026] Step 1, growing a yttrium iron garnet (YIG) film on a gadolinium gallium garnet substrate (GGG) by liquid phase epitaxy to obtain a substrate with YIG;

[0027] Step 2, cleaning: first, soak the substrate with YIG obtained in step 1 in a mixture of concentrated sulfuric acid and hydrogen peroxide with a volume ratio of 1:1 for 20 minutes, take it out and rinse it with deionized water; then, clean the substrate in the previous step Soak the substrate in a mixture of ammonia, hydrogen peroxide and deionized water with a volume ratio of 1:1:5 for 20 minutes, take it out and rinse it with deionized water; finally, clean it ultrasonically in acetone and ethanol in turn, and dry it with nitrogen gas for later use ;

[0028] Step 3, use photolithography to form antenna patterns on the YIG substrate cleaned in step 2, then use magnetron sputtering to deposit platinum ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a magnon crystal magnetic sensor and a preparation method thereof, and belongs to the technical field of magnetic sensing. The magnetic sensor comprises a gadolinium gallium garnet substrate, a gadolinium gallium garnet film positioned on the gadolinium gallium garnet substrate, a magnetostatic surface wave excitation antenna and a receiving antenna positioned on a YIG, a zinc oxide film positioned on the YIG, and equal-distance interdigital electrodes with reflecting gratings and positioned above the zinc oxide film. The magnon crystal magnetic sensor realizes magneticdetection by using the linear relation between tiny change of an external magnetic field and deviation of absorption waves of SMSW propagated in magnon crystals. The SAW frequency obtained by the method is higher, and the temperature stability of a magnon band gap structure can be effectively improved, so that the temperature stability of the magnetic sensor is improved.

Description

technical field [0001] The invention belongs to the technical field of magnetic sensing, and in particular relates to a magnon crystal magnetic sensor and a preparation method thereof. Background technique [0002] Magnetic sensors are widely used in modern industry and electronic products. According to different measurement methods, magnetic sensors are divided into Hall magnetic sensors, fluxgate magnetic sensors, magnetoresistive sensors, and superconducting quantum interference devices (SQUID). Based on the wide application of magnetic sensors, high sensitivity, miniaturization and stability have attracted much attention. The magnon crystal is a periodic artificial magnetic microstructure. By changing the periodic structure, the band gap structure of the magnon crystal can be adjusted. When the external magnetic field changes slightly, the band gap of the magnon crystal will change, resulting in the SMSW propagating in the magnon crystal. The absorption peak of the magn...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/18C23C14/02C23C14/04C23C14/08C23C14/58G01R33/00G01R33/02
Inventor 钟智勇王城刘爽金立川文天龙廖宇龙唐晓莉张怀武
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com