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Growing method of chromium and neodymium double doped gadolinium-gallium garnet self Q switching laser crystal

A laser crystal and growth method technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as difficult growth, uneven distribution of doping ions, etc.

Inactive Publication Date: 2005-08-03
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the convex interface growth of YAG crystals during the growth process, the distribution of doped ions is uneven, and it is difficult to grow high-quality large-size (diameter greater than 5cm) crystals.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The Cr, Nd:GGG crystals are grown with the above-mentioned raw material ratio and process flow, and x=0.05%, Y=4%, and Z=2x are taken in the raw material ratio. Gd first 2 o 3 , Ga 2 o 3 、Nd 2 o 3 and Cr 2 o 3 Weigh according to the above ratio, mechanically mix evenly, sinter in a muffle furnace at 1000°C, put into a single crystal growth furnace, vacuumize, and fill with 98% nitrogen + 2% oxygen. Pulling speed: 2mm / h rotation Speed: 15rpm. After growing the crystal, it was slowly lowered to room temperature, and the crystal was taken out. After inspection, the concentrations of Nd ions and Cr ions were evenly distributed (in the plane perpendicular to the crystal growth direction, the ion concentration difference was less than 1%), and the optical properties of the crystal were very good.

Embodiment 2

[0030] Cr, Nd:GGG crystals are grown by using the above-mentioned raw material ratio and process flow, and x=0.1%, Y=0.5%, and z=3x are taken in the raw material ratio. Gd first 2 o 3 , Ga 2 o 3 、Nd 2 o 3 and Cr 2 o 3 Weigh according to the above ratio, mechanically mix evenly, sinter in a muffle furnace at 1400°C, put into a single crystal growth furnace, vacuumize, and fill with 98% nitrogen + 2% oxygen. Pulling speed: 2.5mm / h Rotation speed: 14rpm. After growing the crystal, it was slowly lowered to room temperature, and the crystal was taken out. After checking that the concentration of Nd ions and Cr ions was evenly distributed, the optical properties of the crystal were very good.

Embodiment 3

[0032] The Cr, Nd:GG crystals are grown by using the above-mentioned raw material ratio and process flow. In the raw material ratio, x=0.2%, Y=2%, and Z=2.5x. Gd first 2 o 3 , Ga 2 o 3 、Nd 2 o 3 and Cr 2 o 3 Weigh according to the above ratio, mechanically mix evenly, sinter in a muffle furnace at 1200°C, put into a single crystal growth furnace, vacuumize, and fill with 98% nitrogen + 2% oxygen. Pulling speed: 3mm / h rotation Speed: 16rpm. After growing the crystal, it was slowly lowered to room temperature, and the crystal was taken out. After checking that the concentration of Nd ions and Cr ions was evenly distributed, the optical properties of the crystal were very good.

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PUM

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Abstract

The present invention is growth process of chromium and neodymium double doped gadolinium-gallium garnet as self Q switching laser crystal. The present invention features that the crystal of structure expression of Ca3z / 2Nd3yGd3(1-y-z / 2)Ga5-xCrxO12 is prepared with gadolinium oxide, gallium oxide, neodymium oxide, crhromium oxide and calcium oxide as main material and through solid synthesis to form crystal material and subsequent crystal growth in 98 % nitrogen +2 % oxygen condition in Czochralski process. The chromium and neodymium double doped gadolinium-gallium garnet as self Q switching laser crystal of the present invention has the features of ion concentration difference within 1 % in the plane perpendicular to the crystal growth direction, great size and high quality.

Description

technical field [0001] The present invention relates to the growth of crystal, particularly a kind of doped chromium-doped neodymium-gadolinium-gallium garnet (Cr 4+ ,Nd 3+ :Gd 3 Ga 5 o 12 , hereinafter referred to as: Cr, Yb: GGG) laser crystal growth method. Background technique [0002] Diode-pumped passively Q-switched lasers are laser sources that generate pulses with high peak power and high repetition rate in the nanosecond and sub-nanosecond range. It has the characteristics of compact structure, economy and full solidification, and can be widely used in radar, ranging, remote viewing, nonlinear optical processing and material processing. Passively Q-switched solid-state lasers usually use organic dyes and inorganic color center crystals as saturable absorbers. However, dyes have poor thermal stability, low damage threshold, easy aging, and need a complex cooling system; color center crystals have low color center concentration and often have color center decay...

Claims

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Application Information

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IPC IPC(8): C30B15/00C30B29/28H01S3/16
Inventor 赵志伟徐军邓佩珍姜本学郭华
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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