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56 results about "Yellow laser" patented technology

Integrated capacitive sensing touch screen and manufacturing method thereof

The invention relates to an integrated capacitive sensing touch screen and a manufacturing method thereof, and relates to a capacitive touch screen. The integrated capacitive sensing touch screen is provided with a substrate, a transparent conductive film and a transparent conductive electrode are arranged on one surface of the substrate, a color coating layer is arranged in a non-visible range of the touch screen, and a space is reserved on the partial or complete transparent conductive electrode. A color ACP (anisotropic conductive paste) adhesive layer is arranged in the space and form the non-visible range of the touch screen together with a coverage range of the color coating layer. The transparent conductive film is deposited on the substrate. The transparent conductive layer and the transparent conductive electrode are manufactured by yellow-laser process. The color coating layer is manufactured in the non-visible range of the touch screen, and the space is reserved on the partial or complete transparent conductive electrode. The color ACP adhesive layer is manufactured in the space on the transparent conductive electrode and used for forming the non-visible range of the touch screen and a thermocured flexible circuit board to be connected with an external control circuit. Manufacturing procedures can be greatly reduced, production cost is reduced, and quality and yield of the integrated touch screen are improved.
Owner:FUJIAN KECHUANG PHOTOELECTRIC

All solid Raman self frequency doubling yellow laser of BaTeMo2O9 crystal

InactiveCN102623885AMultiplier implementationCompact structureActive medium materialResonant cavityResonance
The invention provides an all solid Raman self frequency doubling yellow laser of BaTeMo2O9 crystal, which comprises a pump light source, a diaphragm, a polarization apparatus and a resonant cavity, wherein the pump light source, the diaphragm, the polarization apparatus and the resonant cavity are orderly arrayed, the resonant cavity comprises an input lens, BaTeMo2O9crystal, an output lens and a filtering plate, the BaTeMo2O9 crystal is arranged between the input lens and the output lens, and the filtering plate is arranged on the outer side of the output lens; and the two end of the BaTeMo2O9 crystal are all plated with antireflection films of 1064nm, 1178nm and 580nm, and the input lens and the output lens are coated with films. The all solid Raman self frequency doubling yellow laserprovided by the invention adopts the BaTeMo2O9 crystal to replace the Raman crystal and frequency doubling crystal. The all solid Raman self frequency doubling yellow laser utilizes the resonance outside the cavity to realize the Raman self frequency doubling in the crystal, realizes the Raman conversion of 1064nm fundamental frequency light so as to obtain Raman light about 1178nm far away, and realizes the frequency doubling of the Roman light to generate the yellow laser of 589nm; and moreover, the all solid Raman self frequency doubling yellow laser has the characteristics of compact structure, high efficiency and stability.
Owner:SHANDONG UNIV

All-solid-state yellow laser for medicine

The invention discloses an all-solid-state yellow laser for medicine. The all-solid-state yellow laser comprises a pumping source system and a resonant cavity, wherein the pumping source system comprises a semiconductor laser and a focusing coupling lens system which are sequentially connected, the resonant cavity is a straight-line cavity and is arranged at an output end of the focusing coupling lens system, the resonant cavity comprise an input mirror, a gain medium, a yellow output mirror and an optical filter which are sequentially arranged, the gain medium is Dy:BSO, pumping light emitted from the semiconductor laser is focused in the gain medium in the resonant cavity by the focusing coupling lens system, the gain medium absorbs the pumping light, oscillation is generated in the resonant cavity to stimulate yellow laser, and the yellow laser sequentially passes through the yellow output mirror and the optical filter and is out. In the all-solid-state yellow laser, a combined mode of improving dosage concentration of active ions and increasing absorption range is adopted, a non-linear frequency conversion process is not needed, the absorption rate of the gain medium to the pumping light is effectively improved, and the stability of the all-solid-state yellow laser is improved.
Owner:SUZHOU INST OF BIOMEDICAL ENG & TECH CHINESE ACADEMY OF SCI

Three-color laser light source and laser projection television

The invention discloses a three-color laser light source which comprises a shell. A first cavity and a second cavity are arranged in the shell, and the first cavity contains a laser assembly and a first light composition lens. The laser assembly comprises a blue laser, a red laser and a yellow laser. The first light composition lens receives laser beams emitted by the laser assembly, combines thebeams and then outputs the beams. The second cavity contains a second optical lens assembly, and the second optical lens assembly is used for shaping the laser beams and finally combines the laser beams into one path of laser beams to be output from a light outlet of the shell. The laser beams emitted from the first light composition lens are sequentially incident to a beam shrinkage lens and thesecond optical lens assembly. The inner wall of the shell extends to define a mounting window, and the beam shrinkage lens is arranged in the mounting window. The beam shrinkage lens and the inner wall extending part of the shell divide the first cavity and the second cavity into two cavities which are not in communication. The three-color laser light source provided by the invention can achieve highlight and wide color gamuts, and meanwhile a light source light path is compact so as to be beneficial to miniaturization of the size.
Owner:QINGDAO HISENSE LASER DISPLAY CO LTD

Tunable all-solid-state white light laser system

ActiveCN110165536AFlexible adjustment of white light chromaticitySimplified Shaping SystemLaser detailsAll solid stateLength wave
The invention relates to a tunable all-solid-state white light laser system and belongs to the technical field of white laser display. The system comprises a blue light LD, a self-frequency doubling yellow laser and a laser beam combining assembly, wherein the light emitted by the blue light LD and the light emitted by the self-frequency doubling yellow laser are combined through the laser beam combining assembly to form white light laser, and the working wavelength of the blue light LD is 430-450 nm, and the working wavelength of the self-frequency doubling yellow laser is 560-590nm. According to the spatial color mixing principle, the white light laser is obtained through matching according to a proper proportion, and the blue light components and yellow light components in the system are independently adjustable; the adjustment of cold white light, natural white light and warm white light of the system can be achieved by controlling the power ratio of the blue light components and the yellow light components; a super-continuum spectrum generation device and complex devices such as white light extraction are not needed, and the system is adjustable in real-time chromaticity, is easy to integrate, and is particularly suitable for the field of high-power special illumination display.
Owner:SHANDONG UNIV

Display device and production method

The invention discloses a display device mainly comprising an upper structural member (91), a lower structural member (92) and control ICs (Integrated Circuit) (80), wherein the upper structural member (91) is produced by using an ITO (Indium Tin Oxide) shielding layer (10), an upper protecting body (20) and a color filtering layer (3) in sequence through a yellow laser technique; the lower structural member (92) is produced by using a photoresist layer (40), a pixel electrode layer (60) and a lower protecting body (70) in sequence through the yellow laser technique. The display device is characterized in that one or more isolators are arranged between the upper structural member (91) and the lower structural member (92), a cavity is formed inside each isolator and is used for storing liquid crystals and forming a liquid crystal layer (50); the upper structural member (91), the lower structural member (92) and the liquid crystal layer (50) are connected together by adopting a fitting mode; the pixel electrode layer (60) is sputtered on the lower protecting body (70) of the upper structural member (91) and adopts a multistage superposition design; the size of the lower structural member (92) is greater than that of the upper structural member (91); one or more control ICs (80) are arranged in a spare region where the lower structural member (92) is greater than the upper structural member (91), and are electrically connected with the lower structural member (92) through the pixel electrode layer (60).
Owner:深圳市易快来科技股份有限公司

Low temperature polysilicon thin film transistor and its preparation method

The invention provides a low-temperature poly-silicon thin film transistor and a preparation method of the low-temperature poly-silicon thin film transistor. The LTPS TFT sequentially comprises a substrate, a heat conducting layer provided with a plurality of strip-shaped protrusions, a planarization layer and an active layer with a plurality of active channels, wherein the active layer is formed by carrying out the yellow laser process on a low-temperature poly-silicon thin film, a gate insulator, a gate electrode, an interlayer insulator, a source electrode and a drain electrode are arranged on the active layer, each strip-shaped protrusion is located outside one side of the position where the corresponding active channel is located, each strip-shaped protrusion and the corresponding active channel are adjacent to each other in position, and the length of each strip-shaped protrusion is larger than the width of the corresponding active channel. According to the low-temperature poly-silicon thin film transistor and the preparation method of the low-temperature poly-silicon thin film transistor, because large poly-silicon crystal grains can be obtained and the active channels of the thin film transistor can be completely located inside one single crystal grain, adverse impact of a poly-silicon crystal grain boundary on carrier mobility is avoided, the leakage current phenomenon caused by the crystal grain boundary is eliminated, and a simplest pixel circuit driving structure can be implemented.
Owner:TRULY HUIZHOU SMART DISPLAY
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