56 results about "Yellow laser" patented technology

The invention discloses an all solid-state 579nm yellow Raman laser pumped by a laser. A horizontal light path of incident plane 1064nm holophote are successively provided with a BBO electro-optic Q switch, a Brewster lens, a laser gain medium, a pulse LD side pump module, a 1064nm laser output mirror, a LBO frequency doubling crystal, a 45DEG C spectroscope, a Lambda / 2 wave plate, a focusing lens, a 579nm yellow laser reflector, a KGW Raman crystal and a 579nm yellow laser output mirror. In the invention, many key technologies, such as a pulse semiconductor laser (LD) side pump polycrystal Nd: YAG ceramic rod, a BBO electro-optic Q-switched technology, synchronous delay pulse signal trigger, LBO-crystal outer cavity frequency doubling and the like, are adopted. 532nm green laser can be acquire, wherein peak value power generated by the green laser can reach 370 kW and a narrow pulse width is less than 15ns. The wave band laser is used to perform an end pump on the KGW Raman crystal so as to obtain the high peak power consisting of 1 kHz of repetition rate, around 10ns of pulse width, and over 200kW of the peak power and 579nm yellow Raman laser output of the narrow pulse width.

Disclosed is an all-solid-state double frequency yellow Raman laser device with a coupled cavity, which includes a LD (laser diode) pump source and a resonator. The resonator is composed of a rear cavity mirror, a coupling lens and an output lens; a laser amplifying medium, a Q value adjusting device and a Raman crystal are arranged between the rear mirror and the coupling lens; a frequency doubling crystal is arranged between the coupling lens and the output lens. The temperature of the laser amplifying medium, the Q value adjusting device, the Raman crystal and the frequency doubling crystal is controlled by a cooling device. Compared with prior art, the laser device of the invention has small volume, high output power and high conversion efficiency. Due to the small volume, stable performance and low cost, the laser device can be widely used in laser medical treatment field.

Disclosed is an all-solid-state double frequency yellow Raman laser device with an intra-cavity, which includes a LD (laser diode) pump source and a resonator. The resonator is composed of a rear cavity mirror and an output lens; a laser amplifying medium, a Q value adjusting device, a Raman crystal and a frequency doubling crystal are arranged in the resonator. The temperature of the laser amplifying medium, the Q value adjusting device, the Raman crystal and the frequency doubling crystal is controlled by a cooling device. Compared with prior art, the laser device of the invention has small volume, high output power and high conversion efficiency. Due to the small volume, stable performance and low cost, the laser device can be widely used in laser medical treatment field.

The invention disclose a two-crystal compound gain inner cavity Raman yellow light laser which comprises: the gain laser diode pumping source emits 808nm pumping light which is partly absorbed by the Nd: YAG crystal and Nd: YVO4 crystal coaxial placed, the two crystals provide the laser gain at the same time, The 1.06 mum laser polarization of the base frequency is Pi polarization which generates in the resonant cavity which is composed of the whole mirror and the yellow light output mirror; the base frequency laser passes Nd: YVO4 crystal obtains the Raman gain, 1.18 mu m stokes light generates outreaching by the oscillation after outreaching the Raman scattering threshold value; 1.18mum anti-Stokes light is multiplied through the crystal multiplier, the 588nm yellow light is generated and output through the output mirror. The technical scheme depends on double crystal compound gain to guarantee laser polarization so as to increase the multiplier efficiency; higher pump power is exerted depending on high Nd: YAG crystal heat rupture threshold value, therefore the yellow output power is increased.

The invention, which belongs to a laser technology field, discloses a fiber Raman yellow laser based on a main oscillation power amplifier. The laser of the invention comprises: a pumped fiber laser, a seed laser fiber resonance cavity, a seed laser Raman fiber amplifier and a frequency multiplier. An output terminal of the pumped fiber laser is coupled with an input terminal of the seed laser fiber resonance cavity through the fiber or forms direct fiber welding with the input terminal of the seed laser fiber resonant cavity. The output terminal of the seed laser fiber resonance cavity is coupled with the input terminal of the seed laser Raman fiber amplifier or forms the direct fiber welding with the input terminal of the seed laser Raman fiber amplifier. The frequency multiplier is located in an output terminal light path of the seed laser Raman fiber amplifier. A resonant wavelength of the seed laser fiber resonance cavity is two times of a target yellow wavelength. According to the invention, a volume is small. Cost is low and a line width is narrow. Using the laser is beneficial to control fundamental frequency light quality. High secondary harmonic conversion efficiency can be obtained.

The invention discloses a medicinal all-solid-state yellow laser. The laser comprises a pumping source system and a Z-shaped resonator device, wherein the pumping source system mainly comprises a laser diode (LD), an optical fiber and a focusing coupling lens system which are sequentially arranged on an optical path; the Z-shaped resonator device comprises a tail mirror, a concave folding mirror, a yellow light output mirror and a total-reflection mirror which are sequentially arranged in a Z-shaped chamber; a laser gain medium is arranged between the tail mirror and the concave folding mirror; a Brewster sheet is arranged between the concave folding mirror and the yellow light output mirror; a doubling frequency crystal is arranged between the yellow light output mirror and the total-reflection mirror; and the temperatures of the laser gain medium and the doubling frequency crystal are controlled by a refrigerating device. The medicinal all-solid-state yellow laser has the advantages of simple structure, small volume, high power / energy, high efficiency and good output stability and can obtain a medicinal laser output in a wave band of 561nm.

The invention relates to a composite self-Raman frequency-doubled yellow laser crystal module. The module comprises self-Raman laser crystals, wherein nonlinear optical crystals which are cut at a special matching angle are adhered into a whole by an optical adhesive; and optical thin films coated on the front end face and the rear end face of the crystals together form an optical resonant cavity. The yellow laser module has the characteristics of simple design, compact structure, convenience of batch production and low cost; and in use, the laser module does not need to be adjusted, and yellow light can be directly emitted under pumping irradiation of a semiconductor laser which passes through a shaping and coupling system. The yellow laser module can be used in a laser device which outputs low and medium power, so that laser can be conveniently and rapidly output, and the module is suitable for sodium beacon light sources of the field of military affairs and meteorological field and the field of laser cosmetology and can be widely applied to the fields such as spectroscopy, laser radar, information storage and the like.

The invention relates to a LD end-pumped Nd:YAG / SrWO4KTP yellow Laser, belonging to the solid-state laser field. The invention adopts a LD end-pumped Nd: YAG doped to generate a fundamental frequency laser, the fundamental frequency laser is turned into a Raman laser through a Raman crystal SrWO4, the Raman laser carries out the intra-cavity double frequency by a double frequency crystal KTP and finally the yellow laser is generated. The yellow Laser has the advantages of small volume, stable performance, high power, lower cost, etc., thereby having wide practicality.

The invention relates to an integrated capacitive sensing touch screen and a manufacturing method thereof, and relates to a capacitive touch screen. The integrated capacitive sensing touch screen is provided with a substrate, a transparent conductive film and a transparent conductive electrode are arranged on one surface of the substrate, a color coating layer is arranged in a non-visible range of the touch screen, and a space is reserved on the partial or complete transparent conductive electrode. A color ACP (anisotropic conductive paste) adhesive layer is arranged in the space and form the non-visible range of the touch screen together with a coverage range of the color coating layer. The transparent conductive film is deposited on the substrate. The transparent conductive layer and the transparent conductive electrode are manufactured by yellow-laser process. The color coating layer is manufactured in the non-visible range of the touch screen, and the space is reserved on the partial or complete transparent conductive electrode. The color ACP adhesive layer is manufactured in the space on the transparent conductive electrode and used for forming the non-visible range of the touch screen and a thermocured flexible circuit board to be connected with an external control circuit. Manufacturing procedures can be greatly reduced, production cost is reduced, and quality and yield of the integrated touch screen are improved.

Disclosed is an all-solid-state double frequency yellow self-Raman laser device with a folded cavity, which includes a LD (laser diode) pump source and a resonator. The resonator is composed of a rear cavity mirror, a 45 degrees reflection mirror and a total reflective mirror. The laser device of the invention is characterized in that a self-Raman crystal and a Q value adjusting device are arranged between the rear cavity mirror and the 45 degrees reflection mirror; a frequency doubling crystal is arranged between the 45 degrees reflection mirror and the total reflective mirror. The temperature of the self-Raman crystal, the Q value adjusting device and the frequency doubling crystal is controlled by a cooling device. Compared with prior art, the laser device of the invention has small volume, high output power and high conversion efficiency. Due to the small volume, stable performance and low cost, the laser device can be widely used in laser medical treatment field.

A LD end-pumped Nd:YAG / GdVO4 / KTP yellow laser pertains to the field of solid state laser. The invention uses an LD end to pump neodymium-doped yttrium aluminum garnet (Nd:YAG) to produce a fundamental frequency laser, which is transformed to be a Raman light after passing through Raman crystal gadolinium vanadium (GdVO4), and then processed by frequency doubling crystal potassium titanyl phosphate (KTP) to realize intra-cavity frequency doubling; finally, the yellow laser is generated. The yellow laser has the advantages of small volume, stable performance, high power, low cost and so on, and has wide practicability.

Disclosed is an all-solid-state double frequency yellow Raman laser device with a folded cavity, which includes a LD (laser diode) pump source and a resonator. The resonator is composed of a rear cavity mirror, a 45 degrees reflection mirror and a total reflective mirror. The laser device of the invention is characterized in that a laser amplifying medium, a Q value adjusting device, a Raman crystal are arranged between the rear cavity mirror and the 45 degrees reflection mirror of the resonator; a frequency doubling crystal is arranged between the 45 degrees reflection mirror and the total reflective mirror. The temperature of the laser amplifying medium, the Q value adjusting device, the Raman crystal and the frequency doubling crystal is controlled by a cooling device. Compared with prior art, the laser device of the invention has small volume, high output power and high conversion efficiency. Due to the small volume, stable performance and low cost, the laser device can be widely used in laser medical treatment field.

The invention provides an all solid Raman self frequency doubling yellow laser of BaTeMo2O9 crystal, which comprises a pump light source, a diaphragm, a polarization apparatus and a resonant cavity, wherein the pump light source, the diaphragm, the polarization apparatus and the resonant cavity are orderly arrayed, the resonant cavity comprises an input lens, BaTeMo2O9crystal, an output lens and a filtering plate, the BaTeMo2O9 crystal is arranged between the input lens and the output lens, and the filtering plate is arranged on the outer side of the output lens; and the two end of the BaTeMo2O9 crystal are all plated with antireflection films of 1064nm, 1178nm and 580nm, and the input lens and the output lens are coated with films. The all solid Raman self frequency doubling yellow laserprovided by the invention adopts the BaTeMo2O9 crystal to replace the Raman crystal and frequency doubling crystal. The all solid Raman self frequency doubling yellow laser utilizes the resonance outside the cavity to realize the Raman self frequency doubling in the crystal, realizes the Raman conversion of 1064nm fundamental frequency light so as to obtain Raman light about 1178nm far away, and realizes the frequency doubling of the Roman light to generate the yellow laser of 589nm; and moreover, the all solid Raman self frequency doubling yellow laser has the characteristics of compact structure, high efficiency and stability.

The invention discloses an all-solid-state yellow laser for medicine. The all-solid-state yellow laser comprises a pumping source system and a resonant cavity, wherein the pumping source system comprises a semiconductor laser and a focusing coupling lens system which are sequentially connected, the resonant cavity is a straight-line cavity and is arranged at an output end of the focusing coupling lens system, the resonant cavity comprise an input mirror, a gain medium, a yellow output mirror and an optical filter which are sequentially arranged, the gain medium is Dy:BSO, pumping light emitted from the semiconductor laser is focused in the gain medium in the resonant cavity by the focusing coupling lens system, the gain medium absorbs the pumping light, oscillation is generated in the resonant cavity to stimulate yellow laser, and the yellow laser sequentially passes through the yellow output mirror and the optical filter and is out. In the all-solid-state yellow laser, a combined mode of improving dosage concentration of active ions and increasing absorption range is adopted, a non-linear frequency conversion process is not needed, the absorption rate of the gain medium to the pumping light is effectively improved, and the stability of the all-solid-state yellow laser is improved.

The invention relates to a LD end-pumped Nd: YVO4KTP yellow Laser, belonging to the solid laser field. The invention utilizes a LD end-pumped c-cut Nd: YVO4 doped to generate a Raman laser from a Raman crystal, the Raman laser carries out the intra-cavity double frequency by a double frequency crystal KTP and finally the yellow laser is generated. The invention is characterized in that the Laser adopts the c-cut Nd: YVO4 doped from the Raman crystal as a laser media and a Raman medium as well. The yellow Laser has the advantages of the small volume, stable performance, high power, lower cost, etc., thereby having wide practicality.

The invention discloses an all-solid-state yellow light laser based on a double-doped crystal. The laser comprises a pumping system and a resonant cavity. The pumping system comprises two semiconductor lasers, two beam shaping modules, a polarization combining module and a focusing lens module. A dual-doped laser gain medium comprises a Dy3+ doped oxide matrix and auxiliary doped ions. According to the invention, the stimulated radiation of 4F9 / 2 to 6H13 / 2 in Dy3+ is used to directly generate yellow laser without a non-linear frequency conversion process; the problem of complex structure of the current all-solid-state yellow laser is fundamentally solved; the laser medium provided by the invention uses the double-doped oxide crystal, and particle number consumption at 6H13 / 2 energy level is accelerated through multiphonon relaxation; the introduction of co-doped ions (Tb3+ / Eu3+) achieves energy transfer under the laser level, reducing the energy level lifetime of 6H13 / 2; fast inversionof the number of particles is realized; and the stability of yellow laser output is improved.

The invention discloses a three-color laser light source which comprises a shell. A first cavity and a second cavity are arranged in the shell, and the first cavity contains a laser assembly and a first light composition lens. The laser assembly comprises a blue laser, a red laser and a yellow laser. The first light composition lens receives laser beams emitted by the laser assembly, combines thebeams and then outputs the beams. The second cavity contains a second optical lens assembly, and the second optical lens assembly is used for shaping the laser beams and finally combines the laser beams into one path of laser beams to be output from a light outlet of the shell. The laser beams emitted from the first light composition lens are sequentially incident to a beam shrinkage lens and thesecond optical lens assembly. The inner wall of the shell extends to define a mounting window, and the beam shrinkage lens is arranged in the mounting window. The beam shrinkage lens and the inner wall extending part of the shell divide the first cavity and the second cavity into two cavities which are not in communication. The three-color laser light source provided by the invention can achieve highlight and wide color gamuts, and meanwhile a light source light path is compact so as to be beneficial to miniaturization of the size.

The invention relates to a tunable all-solid-state white light laser system and belongs to the technical field of white laser display. The system comprises a blue light LD, a self-frequency doubling yellow laser and a laser beam combining assembly, wherein the light emitted by the blue light LD and the light emitted by the self-frequency doubling yellow laser are combined through the laser beam combining assembly to form white light laser, and the working wavelength of the blue light LD is 430-450 nm, and the working wavelength of the self-frequency doubling yellow laser is 560-590nm. According to the spatial color mixing principle, the white light laser is obtained through matching according to a proper proportion, and the blue light components and yellow light components in the system are independently adjustable; the adjustment of cold white light, natural white light and warm white light of the system can be achieved by controlling the power ratio of the blue light components and the yellow light components; a super-continuum spectrum generation device and complex devices such as white light extraction are not needed, and the system is adjustable in real-time chromaticity, is easy to integrate, and is particularly suitable for the field of high-power special illumination display.

The invention discloses a display device mainly comprising an upper structural member (91), a lower structural member (92) and control ICs (Integrated Circuit) (80), wherein the upper structural member (91) is produced by using an ITO (Indium Tin Oxide) shielding layer (10), an upper protecting body (20) and a color filtering layer (3) in sequence through a yellow laser technique; the lower structural member (92) is produced by using a photoresist layer (40), a pixel electrode layer (60) and a lower protecting body (70) in sequence through the yellow laser technique. The display device is characterized in that one or more isolators are arranged between the upper structural member (91) and the lower structural member (92), a cavity is formed inside each isolator and is used for storing liquid crystals and forming a liquid crystal layer (50); the upper structural member (91), the lower structural member (92) and the liquid crystal layer (50) are connected together by adopting a fitting mode; the pixel electrode layer (60) is sputtered on the lower protecting body (70) of the upper structural member (91) and adopts a multistage superposition design; the size of the lower structural member (92) is greater than that of the upper structural member (91); one or more control ICs (80) are arranged in a spare region where the lower structural member (92) is greater than the upper structural member (91), and are electrically connected with the lower structural member (92) through the pixel electrode layer (60).

The invention discloses a dysprosium ion activated gadolinium gallium garnet novel laser crystal, and relates to the field of laser crystal materials. The crystal material has the chemical formula of Dy:Gd3Ga5O12. Gd2O3, Ga2O3 and Dy2O3 of 4N are adopted as raw materials, a Dy:Gd3Ga5O12 raw material is obtained through high temperature solid-phase reaction, and crystals are grown through a Czochralski method. The material is used for realizing yellow laser output.

The invention discloses a yellow laser device based on a terbium-doped fluoride crystal. The laser device comprises a pumping system and a resonant cavity, wherein the pumping system comprises a pumping light source, a light beam shaping module, a power adjusting module and a focusing lens module, the resonant cavity comprises an input mirror, a laser gain medium, an output coupling mirror and anoptical filter, and the laser gain medium is a terbium-doped fluoride crystal Tb<3+>:LaF3. The yellow laser is directly generated by utilizing 5D4-7F4 stimulated radiation in Tb<3+>, the nonlinear frequency conversion process is not needed, so a problem that the yellow laser is complex in structure in the prior art is fundamentally solved. The laser medium is Tb<3+>:LaF3, fluoride with low phononenergy is utilized as a doping matrix, and the excited state absorption (ESA) process in the crystal can be reduced. The laser device is advantaged in that a cross relaxation channel does not exist, moreover, the low stimulated emission cross section of Tb<3+> can be made up by increasing the doping concentration of Tb<3+>, and stability of the yellow laser output is improved.

The invention discloses a Dy<3+>-doped crystal material which directly achieves yellow laser output and has the chemical formula of CaDyxLa<1-x>Ga3O7, 0.01 <= x <= 0.05. The grown and obtained Dy<3+>-activated CaLaGa3O7 crystal is directly pumped by means of blue semiconductor laser. The product achieves all solid-state yellow laser output in the waveband of 570-597 nm.

The method and device are used to make digital image explosing on photosensitive sheets. The method includes disintegrating images into red, blue and yellow data and then modulating them by three color laser beams with spacial differences converted into time differences for laser scanning to determine transmitting time. The device is consists of red, blue and yellow lasers and a scanner, having scanning lenses arranged according to the laser beam paths. It is compact, simple, reliable. The lenses are low cost and easily designed with quality images.

The invention provides a combined full-solid state frequency-doubled Raman yellow laser with compact structure, which mainly adopts a semiconductor laser end-pumped linear cavity or folded cavity structure and can realize continuous or Q-switched yellow laser output. The Raman yellow laser is mainly characterized by placing a Raman combination crystal and a nonlinear crystal in a laser cavity. Owing to adopting the Raman combination crystal, the invention overcomes the defect that the laser gain medium and the Raman gain medium in the current solid Raman laser are separated, thereby effectively reducing the thermal effect of the laser medium and improving the yellow laser beam quality and system stability.

The invention discloses a 577nm yellow laser unit and a generation method of 577nm yellow laser. A 1064nm laser unit and a 1256nm laser unit are used as fundamental frequency light sources through extra-cavity sum-frequency of 1064nm laser and 1256nm laser; trough optical components, such as a 45-degree beam splitter and a coupling system, the 1064nm and 1256nm laser beams are subjected to sum-frequency in sum-frequency crystal, and 577nm yellow laser can be output. A yellow laser system has the advantages such as novelty of the generation mode, compact structure, operational safety and high stability, and has important applicable value in the fields such as medicine, astronomy and scientific research.

The invention provides a praseodymium samarium thulium-codoped visible laser crystal material preparation method. The method comprises the following steps: burdening, sintering, crystal growing, and cooling and the like. A chemical formula of a praseodymium samarium thulium-codoped visible laser crystal material is Gd3-x-y-zSmxPryTmzSc2Ga3O12; wherein x is greater than or equal to 0.1 and less than or equal to 0.3, y is greater than or equal to 0.05 and less than or equal to 0.15, and z is greater than or equal to 0.15 and less than or equal to 0.23. The praseodymium samarium thulium-codoped visible laser crystal has the advantages that preparation technology is simple, fluorescence efficiency is high, output time is fast, fluorescence efficiency is high, and yellow laser output is realized.

The invention provides a low-temperature poly-silicon thin film transistor and a preparation method of the low-temperature poly-silicon thin film transistor. The LTPS TFT sequentially comprises a substrate, a heat conducting layer provided with a plurality of strip-shaped protrusions, a planarization layer and an active layer with a plurality of active channels, wherein the active layer is formed by carrying out the yellow laser process on a low-temperature poly-silicon thin film, a gate insulator, a gate electrode, an interlayer insulator, a source electrode and a drain electrode are arranged on the active layer, each strip-shaped protrusion is located outside one side of the position where the corresponding active channel is located, each strip-shaped protrusion and the corresponding active channel are adjacent to each other in position, and the length of each strip-shaped protrusion is larger than the width of the corresponding active channel. According to the low-temperature poly-silicon thin film transistor and the preparation method of the low-temperature poly-silicon thin film transistor, because large poly-silicon crystal grains can be obtained and the active channels of the thin film transistor can be completely located inside one single crystal grain, adverse impact of a poly-silicon crystal grain boundary on carrier mobility is avoided, the leakage current phenomenon caused by the crystal grain boundary is eliminated, and a simplest pixel circuit driving structure can be implemented.

The invention discloses an intelligent sidewalk control device which is characterized in that a main control computer (2) receives the video information of a camera (1) on a sidewalk (4) and then controls a signal generator (3), and the signal generator (3) can be a red-green-yellow three-color light or a display, and can also be a laser beam generator which marks a designated spot with red, green and yellow laser beams. The intelligent sidewalk control device can generate a pass signal according to the condition of pedestrians on the sidewalk (4), can reduce traffic accidents and is applicable to urban traffic control.

The invention relates to a homogenizable white laser light source, and relates to the technical field of laser light sources. By arranging the laser emitting unit, the blue light emitting unit and the yellow light emitting unit, blue light laser and yellow light laser are generated. The first focusing lens mixes the blue laser and the yellow laser to generate Gaussian white laser. By arranging the plug-in dodging assembly, the plug-in dodging assembly can move to the first position or the second position. When the plug-in dodging assembly is located at the first position, the Gaussian white laser is homogenized, and uniform white laser is output to serve as a pattern lamp. When the plug-in dodging assembly is located at the second position, Gaussian white laser is directly output to serve as a searchlight. According to the invention, the plug-in dodging assembly is arranged, so that the generated white laser light source can be switched between a Gaussian beam and a uniform beam, and therefore, the light source can be used as a long-distance searchlight and can also be used as a pattern lamp.

The yellow laser that uses the sum frequency in the self-variable crystal cavity to generate yellow light is a nonlinear laser crystal that uses a semiconductor laser (LD) or a lamp to pump a luminescent center and a nonlinear optical effect at the same time - a self-variable crystal (such as aluminum tetraborate yttrium yttrium Neodymium, referred to as NYAB), produces 1.06um and 1.34um in the same laser cavity, and at the same time generates yellow laser with the help of the nonlinear optical sum-frequency effect of the same crystal, and couples it out. There is only one crystal element in the laser cavity, and the axis direction of the laser cavity - the light passing direction of the crystal is the phase matching direction required by the frequency mixing (sum frequency) of 1.06um and 1.34um. This new type of laser has the advantages of small intracavity loss, compactness, easy adjustment, good stability and wide practicability.