Sapphire crucible for growing garnet type single crystal

Abstract

The invention relates to a sapphire crucible for preparing a garnet type single crystal of gadolinium gallium garnet and terbium gallium garnet and the like containing Ga2O3 component. The sapphire crucible for growing the garnet type single crystal comprises an outer crucible sleeved outside an inner crucible, the inner crucible is flush with the top end face of the outer crucible, the inner crucible is matched with the section shape of the outer crucible, and the inner crucible is made of sapphire. By adopting the sapphire crucible device of the technical scheme, iraurite grown by reaction of an iraurite oxide and the Ga2O3 component when an iraurite crucible is used can be prevented from floating on the surface of the melt to affect the internal quality of the crystal, and meanwhile, the promoting effect of the iraurite oxide on decomposition and volatilization of the Ga2O3 component is eliminated.

Description

technical field [0001] The present invention relates to a method for preparing gadolinium gallium garnet (Gd 3 Ga 5 O 12 , referred to as GGG) and terbium gallium garnet (Tb 3 Ga 5 O 12 , referred to as TGG), etc. containing Ga 2 O 3 Component of garnet-type single crystal sapphire crucible. Background technique [0002] High-power solid-state lasers have a series of strict requirements on laser crystals: large absorption cross-section and emission cross-section, long fluorescence lifetime, high thermodynamic properties, and the ability to grow into large-sized crystals with high optical quality. GGG crystals are easy to grow under a flat solid-liquid interface, there are no other impurities and stress centers, the entire cross-section can be effectively used, and it is easy to obtain large-sized slabs and plate-like components for high-power lasers, and GGG crystals have good mechanical properties. And chemical stability, high thermal conductivity, wide pump absorpt...

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Problems solved by technology

[0004] It can be seen from the above that GGG and TGG crystals have broad application prospects, but in the growth process of these two crystals, they are faced with serious Ga 2 o 3 Component volatilization problem, due to component Ga 2 o 3 It has strong oxidizing properties, and the substance has different decomposition pressures at different temperatures, so it is prone to reduction and volatilization during heating and melting to form gallium oxide and oxygen, which makes the melt components deviate from the stoichiometry. If it is corrected in time, it will have a serious impact on the quality of the crystal, and it is difficult to grow large-size and high-quality GGG and TGG crystals

Zhao Guangjun, Shanghai Institute of Optics and Mechanics, Chinese Academy of Sciences introduced a certain oxygen partial pressure into the growth atmosphere of GGG crystals, and the composition Ga 2 o 3 The volatilization of the iridium is effectively suppressed, but due to the use of the iridium crucible, the oxygen introduced accelerates the oxidation of the iridium

In addition, due to the reaction Ir+O 2 = IrO 2 , IrO 2 + Ga 2 o 3 =Ir+Ga 2 O+2O 2 A group of iridium sheets often float on the surface of the melt, which not only brings inconvenience to the observation when the seed crystal is placed, but also changes the temperature field on the surface of the melt, which is easy to produce spiral stripes on the surface and affects the stability of the crystal. Quality, and the floating iridium is easy to be wrapped in the crystal to form scattered points or grow on the shoulder of the crystal to form a large number of dislocations

At the same time, the Ga 2 o 3 The volatilization of components increases the deviation of melt components

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