Product
Patsnap Eureka
For R&D, Patsnap Eureka makes reading and utilizing patents & technical documents easy.
Patsnap Eureka AIR
Designed for self-driven R&D workflows. Generate viable solutions, solve complex R&D challenges, empower your innovation with AI.
Patsnap Eureka Materials
Designed for material experts only. Revolutionize your material R&D, from search, analyze, to developing new materials.
Feature
TechResearch
Generate reliable direction feasibility study reports for your R&D in just a few steps.
TechSeek
Discover and master advanced knowledge NOW. Basics, ideas, possibilities, all at once.
TechMind
As an expert in R&D Theories, TechMind can generates customized viable solutions instantly.
TechRisk
Analyze your overall solution with one click, know your potential R&D risks in advance.
TechMonitor
Get weekly tech updates, stay abreast of the latest tech innovations and key insights.
Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
44results about How to "Realize continuous control" patented technology
Efficacy Topic
Property
Owner
Technical Advancement
Application Domain
Technology Topic
Technology Field Word
Patent Country/Region
Patent Type
Patent Status
Application Year
Inventor
Frequency-and-pattern-reconfigurable antenna based on liquid crystal material
InactiveCN105896082ARealize continuous controlAchieving Beam SteeringAntenna supports/mountingsAntennas earthing switches associationReconfigurable antennaAntenna design
The invention belongs to the antenna technical field and specifically relates to a frequency-and-pattern-reconfigurable antenna based on a liquid crystal material. The frequency-reconfigurable antenna comprises a liquid crystal phase shifter, a liquid crystal microstrip antenna and a one-to-four power divider. By combining the electrical regulation and control characteristic of the liquid crystal material and the design of the frequency-and-pattern-reconfigurable antenna, the frequency-and-pattern-reconfigurable antenna based on the liquid crystal material is produced, so that the frequency of the antenna can realize continuous regulation, tuning range is large and wave beams are deflectable; and practical application of the frequency-and-pattern-reconfigurable antenna in the aspects of miniaturization and broadband is improved.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
Reflection type terahertz tunable polarization controller
InactiveCN103105686AAvoid errorsRealize continuous controlNon-linear opticsPhase retardationPhase difference
The invention discloses a reflection type terahertz tunable polarization controller and a control method thereof. The reflection type terahertz tunable polarization controller is mainly composed of a metal gate polarizer, an anti-reflection film, liquid crystal and a metal reflector. The phase difference of two beams of orthogonal polarized light is changed through continuously changing the refractive index of the liquid crystal between the metal gate polarizer and the metal reflector by an extra electric field, and thus adjustable phase delay in a range of 0 - 2 pi in a frequency range of 1 terahertz (THz) can be achieved. According to the reflection type terahertz tunable polarization controller, a reflection type structure is used, the application range of a terahertz system is extended, and the reflection type terahertz tunable polarization controller has the advantages of being high in extinction ratio, small in consumption, simple in structure, and favorable for miniaturization and integration.
Preparation method of photothermal conversion device based on graphene glass, graphene glass and photothermal conversion device
InactiveCN107311467AHigh light-to-heat conversionImprove light energy utilizationSolar heating energySolar heat devicesIonCvd graphene
The invention discloses a method for photothermal conversion based on vertical-structure graphene growing on a common soda-lime glass substrate. The technical method comprises the following steps that graphene glass is prepared, wherein the graphene layer height in the graphene glass is 1-100 nm. A preparation method of the graphene glass comprises the steps that the substrate is provided, the glass substrate is put in a plasma reaction cavity, a carbon source is subjected to splitting decomposition to produce plasma, the plasma precipitates on the glass substrate to obtain the graphene glass, and the temperature of the plasma reaction cavity in the precipitating process is 500-600 DEG C. Compared with other photothermal conversion devices, a graphene nano-sheet having a special structure and perpendicular to the glass substrate can be obtained without special structural design. Under the irritation of sunlight, the surface temperature of the glass substrate can be increased from 25 DEG C to about 58 DEG C, and very high photothermal conversion efficiency is displayed.
Owner:PEKING UNIV
Phase mask plate of integer-order vortex beam with fractional-order vortex profile and optical path system
ActiveCN109870890ARealize continuous controlAchieve continuous changeOptical elementsGratingSpatial light modulator
The invention provides a phase mask plate of an integer-order vortex beam with a fractional-order vortex profile. A generated novel vortex beam simultaneously has the topological charge of the integer-order vortex and the light intensity profile of the fractional-order vortex. The phase mask plate generates a vortex beam by inputting the phase mask plate into a reflection type spatial light modulator, wherein the transmission rate function expression of the phase mask plate is a formula which is as shown in the specification, wherein A (x, y) is an amplitude modulation function and is used forchanging the profile of the incident coherent light field so as to improve the quality of the vortex beam and avoid the interference of a phase modulation signal and an amplitude modulation signal; ang (.) is an angle-solving function of an imaginary number; rem (.) is a complementary function; m is the topological charge value of the beam, and n is a phase step factor, wherein n is greater thanm; the phase step can be compressed by changing the value of n, so that the required phase step size is generated; theta is the polar angle of a polar coordinate system; and 2 <pi>x / d is a blazed grating item, and is used for generating a blazed grating with a period of d, so that the energy is concentrated in +1 stage diffraction.
Owner:XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
Multi-element graded metal based nanoparticle catalyst and preparation method therefor
InactiveCN105032449AHigh crystallinityCharacteristic X-electron diffraction featuresMaterial nanotechnologyMetal/metal-oxides/metal-hydroxide catalystsElectronic structureNanoparticle
The invention discloses a multi-element graded metal based nanoparticle catalyst and a preparation method therefor. The catalyst is a composite catalyst which consists of a carrier and graded metal based nanoparticles carried on the carrier, wherein a mass ratio of the graded metal based nanoparticles to the carrier is (0.01-4) to 1; constituent elements of the graded metal based nanoparticles are metal elements, which are not radioactive and can stably exist in an aqueous solution, in a periodic table of elements; and constituent components and content of particles from inside to outside are changed in a graded mode. The multi-element graded metal based nanoparticle catalyst solves the problems that an original catalyst is high in cost and insufficient in activity, and simultaneously realizes continuous control on electronic structures and crystal face stress of metal components in the catalyst. The multi-element graded metal based nanoparticle catalyst disclosed by the invention has a novel graded hierarchical structure; and continuous modulation on stress and the electronic structure of each component can be realized by regulating metal composition, so that an effective method is provided for synthesizing the multi-element graded metal based nanoparticle catalyst.
Owner:HARBIN INST OF TECH
Regulation method of high-temperature thermoelectricity Sr3Co4O9 thin-film electrical resistivity
ActiveCN106350774ARealize continuous controlResistivity anisotropyThermoelectric device manufacture/treatmentVacuum evaporation coatingSingle crystalCobalt
The invention provides a regulation method of high-temperature thermoelectricity Sr3Co4O9 thin-film electrical resistivity, and belongs to the field of a functional film material. The method includes steps of growing a Sr3Co4O9 thin film extended along a C axis on a single crystal substrate inclined at different angles through pulsed laser deposition, and regulating the electrical resistivity of the extended thin film along the inclination direction through the inclining angle of the c axis of the single crystal substrate. The method can reflect the electrical transport anisotropy of a laminar cobalt-based oxide material.
Owner:KUNMING UNIV OF SCI & TECH
Fluorescent powder with lighting color controlled by preparation method and application of fluorescent powder
InactiveCN105694884ARich sourcesLow priceLuminescent compositionsSpectral modifiersEffect lightUltraviolet lights
The invention discloses fluorescent powder with lighting color controlled by a preparation method and application of the fluorescent powder. The chemical formula of the fluorescent powder is Ca1-x-y-zSrxbayPrz)2Nb207, wherein 0<x<=0.03, 0<y<=0.03, 0.001<=z<=0.0075. The fluorescent powder prepared by the solid-phase synthesis method can emit red light as triggered by ultraviolet light, and the same-component fluorescent powder prepared by the sol-gel method can emit blue light as trigger by ultraviolet light. The same-component fluorescent powder prepared by the two method is mixed proportionally, emitted light can be continuously adjusted from red light to white light to blue light, and the fluorescent powder can be widely applied to the fields of lighting and display.
Owner:QINGDAO UNIV
Zero-dimensional perovskite nanocrystalline material with tunable light-emitting wavelength, and preparation method and light-emitting wavelength regulation and control method thereof
ActiveCN113462387ALuminescence wavelength controlEasy to prepareLuminescent compositionsLead compoundsWavelengthMaterials science
The invention provides a zero-dimensional perovskite nanocrystalline material with tunable light-emitting wavelength, and a preparation method and a light-emitting wavelength regulation and control method thereof. The preparation method comprises the steps: mixing CTAB and DMSO to obtain a precursor solution; respectively dissolving CsBr and PbBr2 in a precursor solution, so as to obtain a CsBr-CTAB-DMSO solution and a PbBr2-CTAB-DMSO solution; mixing the two solutions, and adding an anti-solvent dichloromethane, to obtain a mixed solution, wherein the ratio of the total mole of CsBr and PbBr2 in the mixed solution to the mole of CTAB is (0.0685-17):1; reacting for 12-24 hours at the temperature of 40-70 DEG C under a stirring condition; and crystallizing, washing and drying to obtain the zero-dimensional perovskite nanocrystalline material. The preparation and regulation and control methods are simple and low in cost; and the light-emitting wavelength of the prepared nanocrystalline material is continuously regulated and controlled from 450 nm to 517 nm.
Owner:QILU UNIV OF TECH
Method for realizing gamma-TiAl alloy refinement by accurately controlling metastable structure stabilization
ActiveCN114214532ARealize continuous controlImprove room temperature plasticityIncreasing energy efficiencyIngotHeat conservation
The invention discloses a method for refining gamma-TiAl alloy by accurately controlling metastable structure stabilization, the gamma-TiAl alloy comprises the following components in atomic percent: 47.0%-48.5% of Al, 1.0%-2.5% of Nb, 0.0%-2.0% of Cr, 1.0%-3.0% of Ta, 0.01%-0.1% of B and the balance of Ti, and the method comprises the following steps: 1, preparing a gamma-TiAl alloy ingot; 2, carrying out hot isostatic pressing and homogenization treatment; thirdly, heating and heat preservation are conducted in an alpha single-phase region and an alpha + gamma two-phase region in sequence, and the heat treatment process is circulated multiple times; and fourthly, heating and heat preservation are conducted in the alpha single-phase region, and the gamma-TiAl alloy of the fine-grain fully lamellar structure is obtained. According to the method, alloy element adding is combined with circulating heat treatment, the metastable structure is continuously regulated and controlled, grain refinement in the gamma-TiAl alloy is achieved, and the room-temperature plasticity, strength and other performance of the gamma-TiAl alloy are improved.
Owner:XI'AN PETROLEUM UNIVERSITY
Method for preparing different colors of mixed phase nano TiO2
InactiveCN104030345ASimple preparation processLow costPhysical/chemical process catalystsTitanium dioxidePhotocatalytic degradationChemistry
The invention relates to a method for preparing different colors of mixed phase nano TiO2. The key technology is carrying out thermal treatment on amorphous nano TiO2 which is synthesized by a water phase in one step at different temperature. The method concretely comprises the following steps: firstly, mixing and reacting a Ti(SO4)2 solution and ammonia water under an ice-water bath condition to obtain amorphous hydrate sol of TiO2, centrifugally washing, and then evaporating the sol at low temperature, so as to obtain amorphous phase nano TiO2; respectively carrying out thermal treatment on evaporated amorphous phase nano TiO2 solid at different temperature, so as to obtain different colors of amorphous and anatase mixed-phase nano TiO2. A series of different colors of mixed phase nano TiO2 can be prepared by adopting a gradient heat treatment method for the first time. The method is simple to operate, available in raw materials, low in cost and friendly to environment. Continuous regulation of an energy band structure is achieved by the prepared different colors of mixed phase nano TiO2, and the mixed phase nano TiO2 has excellent performances and positive significance in photocatalytic degradation of organic pollutants, and has a good application prospect.
Owner:ZHEJIANG UNIV
Composite thermistor material based on rare earth nickel-based oxide as well as preparation method and application of composite thermistor material
ActiveCN113698205ALow resistivityEasy to miniaturizeNegative temperature coefficient thermistorsResistor manufacturePhysical chemistryMiniaturization
The embodiment of the invention discloses a composite thermistor material based on a rare earth nickel-based oxide and a preparation method and application thereof, and belongs to the field of temperature sensors. The composite thermistor material comprises a rare earth nickel-based oxide and a thermistor material with a negative temperature resistance coefficient, and the resistivity of the composite thermistor material is from 10<-2> to 10<2> ohm.m. The low-resistivity composite thermistor material is obtained through interface control of two phases, electronic structure control, proportion control, mixing process control, sintering process control, and the like. Compared with the traditional thermistor material, the composite thermistor material disclosed by the invention has the characteristics of low resistivity and wide temperature range applicability, has a wide application prospect in the aspects of temperature compensation, surge current suppression and the like, and opens up a road for the development of miniaturization and low dimension of thermistors.
Owner:NORTH CHINA ELECTRIC POWER UNIV (BAODING) +1
Dynamic polarization regulation and control device based on anisotropic chiral metamaterial
InactiveCN113267901AGreat circle transition dichroismRealize continuous controlPolarising elementsRefractive indexUltraviolet
The invention discloses a dynamic polarization regulation and control device based on an anisotropic chiral metamaterial. The dynamic polarization regulation and control device is composed of a metal reflecting layer, a layer of refractive index adjustable material and a layer of chiral structure (planar anisotropic structure). Mainly based on the microcavity interference effect, adjustable materials with different refractive indexes are filled in the microcavity between the planar anisotropic chiral metamaterial and the metal reflecting layer, external excitation (such as electricity, light, heat, humidity and the like) is applied to the refractive index adjustable materials, the refractive index of the materials is dynamically adjusted, the interference effect of the microcavity is changed, and thus, continuous regulation and control among linearly polarized light, elliptically polarized light and circularly polarized light are realized. The device has the advantages that polarization regulation and control are convenient, the device size is small, the integration level is high, device processing is compatible with an existing integration process, and the working wavelength can be regulated and controlled at will from ultraviolet to millimeter wave bands. The dynamic polarization regulation and control device has wide application prospects in the fields of stereoscopic display, polarization illumination and the like.
Owner:SICHUAN UNIV
Method for adjusting surface energy level and energy band of semiconductor material
ActiveCN109786242ARealize continuous controlThe concentration of defect states is reducedElectric discharge tubesSemiconductor/solid-state device manufacturingSemiconductor materialsState density
The invention provides a method for adjusting surface energy level and energy band of a semiconductor material, and belongs to the technical field of the semiconductor material. The method provided bythe invention is based on oxygen plasma processing, is capable of continuously controlling the surface chemical composition, the defect state density, the energy level and the energy band of the semiconductor material on premise of not affecting the light transmittance and the conductivity of the semiconductor material, and reduces the back recombination of the interface carrier. The plasma surface treatment technology designed by the invention uses the radio-frequency discharge as the plasma excitation method, uses the oxygen plasma to process the semiconductor material, selectively removesthe doped atoms of the surface of the material by utilizing the characteristics of the low macroscopic temperature and the high particle energy of the radio-frequency plasma and the extremely close atomic radius of the oxygen and the atomic radius of the semiconductor material, and prepares the semiconductor material with the continuously-adjustable surface energy level and energy band through optimizing the parameters of the power, the processing time, etc.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
Method and system for producing high-controllability off-axis optical bottle
ActiveCN113406790ARealize continuous controlEasy to adjustNeutron particle radiation pressure manipulationOptical elementsChirpParticle capture
The invention provides a method and system for producing a high-controllability off-axis optical bottle, and the method comprises the steps: simulating the interference between a plane wave and a round Pearl Gaussian beam through a computer, obtaining a phase hologram, and loading the phase hologram to a reflective spatial light modulator; drawing a composite second-order chirp vortex phase on a computer according to the optical parameters, and loading the composite second-order chirp vortex phase to a transmission-type spatial light modulator; irradiating a reflective spatial light modulator by using a Gaussian beam, enabling reflected light to pass through a spatial filtering system, and selecting positive first-order stripes to obtain a round Pearl Gaussian beam; a circular Pearl Gaussian beam passes through a transmission-type spatial light modulator to obtain a circular Pearl Gaussian beam subjected to composite second-order chirp vortex phase modulation, and the circular Pearl Gaussian beam is transmitted in vacuum or interference-free air, so that strong focusing can be formed for multiple times in the transmission process, and an off-axis optical bottle is formed. The method and system can continuously regulate and control the off-axis optical bottle, is more efficient in the aspects of particle capture and control, and is high in degree of freedom.
Owner:SOUTH CHINA NORMAL UNIVERSITY
Near-infrared band linear thermo-optic adjustable ultra-narrow band absorber based on four-nanocolumn coupling oscillators
The invention discloses a near-infrared band linear thermo-optic adjustable ultra-narrow band absorber based on four-nanocolumn coupling oscillators, which belongs to the technical field of superstructure material absorbers. The absorber comprises multiple periodic structural units. Each periodic structural unit is of a three-layer structure, wherein the bottom layer is a metal film, the middle layer is a dielectric film, and the top layer is an oscillator formed by coupling four nano-columns made of amorphous silicon. By adopting the four-nano-column coupled amorphous silicon oscillators, theabsorber can form an ultra-narrow absorption band in the near-infrared band, and thus, the design of a near-infrared band linear thermo-optic adjustable ultra-narrow absorber is realized. The absorber of the invention can be applied to micro optical switches, optical regulators and infrared camouflage.
Owner:HARBIN INST OF TECH
Submicron or micron monodisperse single crystal conductive gold ball and preparation method thereof
PendingCN113000852AUniform sizeGood monodispersityPolycrystalline material growthFrom normal temperature solutionsElectrically conductiveChloroauric acid
The invention discloses a submicron or micron monodisperse single crystal conductive gold ball and a preparation method thereof. The preparation method comprises the following steps that a small-size monodisperse single crystal conductive gold ball colloidal solution is adopted as a seed solution; chloroauric acid and poly (diallyldimethylammonium chloride) are added into the seed solution, stirring is conducted at a room temperature for 2 hours, and reacting is conducted at 180 DEG C-200 DEG C for 1 hour-2 hours to prepare a single crystal gold nano octahedral colloidal solution; a polishing agent is added into the single crystal gold nano octahedron colloidal solution, and reacting is conducted at 100 DEG C for 5 hours to prepare a monodisperse single crystal conductive gold ball colloidal solution with the enlarged size; and the monodisperse single crystal conductive gold ball colloidal solution with the enlarged size is adopted as a seed solution, the above seed solution treatment step is executed again, and iteration is carried out until the size of the single crystal conductive gold ball reaches a preset requirement. The conductive gold ball is uniform in size and good in monodispersity, the preparation technology is simple and easy to operate, the requirement for instruments and equipment is low, and complex and expensive instruments do not need to be used.
Owner:HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
Explosion-proof solar sector cold protection gate capable of rotating by 360 degrees
ActiveCN107310868ANo manual operationAvoid "Closing Warehouse" AccidentsLarge containersPhotovoltaic energy generationHydraulic cylinderChemical products
The invention relates to an explosion-proof solar sector cold protection gate capable of rotating by 360 degrees. The explosion-proof solar sector cold protection gate capable of rotating by 360 degrees is suitable for stock bin truck loading of various sorts of ore, coal, ash, chemical products, cement, sand and other bulk materials and can achieve truck loading operation particularly under the condition that the outside environment temperature is extremely low. The explosion-proof solar sector cold protection gate comprises an explosion-proof solar cell system, an explosion-proof solar heating system, a stock bin, a stock bin warm-keeping interlayer, a movable cold protection bulkhead gate support assembly, a gate middle connecting section, a middle connecting rotation drive assembly, a rotation feeding section and a combined sector gate assembly. The explosion-proof solar cell system and the explosion-proof solar heating system are arranged outside and inside the stock bin warm-keeping interlayer. The movable cold protection bulkhead gate support assembly is installed on a discharging bin opening of the stock bin and the interlayer outer wall and further comprises a warm-keeping roller bulkhead gate, a support and an electric-hydraulic pusher. The combined sector gate assembly comprises a combined sector gate, a hydraulic power unit and a hydraulic cylinder.
Owner:CHINA COAL SCI & TECH GRP NANJING DESIGN & RES INST CO LTD
A real-time controllable wave absorber based on ferroelectric ferromagnetic composite film loading
The invention discloses a real-time controllable wave absorber based on ferroelectric ferromagnetic composite film loading. Including a dielectric plate (1), the front surface of the dielectric plate (1) is covered with a ferroelectric ferromagnetic composite film (2), and the surface of the ferroelectric ferromagnetic composite film (2) is provided with a metal microstrip frame ( 3), the surface of the ferroelectric ferromagnetic composite film (2) is also provided with a cross-shaped metal microstrip (4) in the center, and the cross-shaped metal microstrip (4) passes through a metal via hole (5) in the middle and is arranged on the dielectric plate (1) The metal layer (7) on the back is connected; the metal layer (7) covers the back of the dielectric board (1). The structure can adjust the wave absorption peak position of the wave absorber in real time by utilizing the characteristic that the dielectric constant and the magnetic permeability of the ferroelectric ferromagnetic composite film (2) can be continuously changed under an external bias voltage. The invention can use bias electric field or magnetic field to independently adjust the wave absorption peak position of the wave absorber in real time, and can realize low reflection loss, and has the characteristics of simple structure, flexible and controllable frequency band, and strong wave absorption ability.
Owner:GUIZHOU MINZU UNIV
Low-power-consumption CBRAM device based on titanium-silver alloy and preparation method and application of low-power-consumption CBRAM device
PendingCN112420922AImprove stabilityRealize continuous controlElectrical apparatusPhysical realisationElectrical resistance and conductanceCranial nerves
The invention provides a low-power-consumption CBRAM device based on titanium-silver alloy and a preparation method and application of the low-power-consumption CBRAM device. The low-power-consumptionCBRAM device comprises a bottom electrode, an insertion layer on one side surface of the bottom electrode, a resistive layer located on the surface of the side, away from the bottom electrode, of theinsertion layer, and a top electrode located on the surface of the side, away from the bottom electrode, of the resistive layer, wherein the insertion layer is made of Ti and Ag alloy materials. According to the low-power-consumption CBRAM device based on the titanium-silver alloy, Ti and Ag alloy is adopted to replace a traditional CBRAM device prepared from Ag, resistance distribution in a high-resistance state and a low-resistance state is more concentrated, and the stability of device performance is further improved; and according to the low-power-consumption CBRAM device based on the titanium-silver alloy, continuous regulation and control of conductivity can be achieved under lower power consumption, and new possibility is provided for establishment of a low-power-consumption memristor array and development of a low-power-consumption cranial nerve-like morphological chip.
Owner:HUBEI UNIV
Photoelectric driving avalanche diode memristor and manufacturing method thereof
PendingCN113838971ARealize continuous controlFlexible change of resistanceSolid-state devicesSemiconductor devicesExternal biasEngineering
The invention discloses a photoelectric driving avalanche diode memristor device and a manufacturing method thereof, a substrate P-Sub is provided with an NBL region, the NBL region is provided with a first annular DN-Well region, the first annular DN-Well region is internally provided with a first annular shallow trench isolation region and an annular N + injection region, and a second annular shallow trench isolation region is located at the junction of the first annular DN-Well region and an annular P-epi region; an annular P-Well region and a polycrystalline silicon ring gate are arranged in the annular P-epi region, an N-Well region is arranged in the second DN-Well region, and a P + injection region is arranged in the N-Well region; the P + injection region is led out to be used as an anode of the photoelectrically driven avalanche diode memristor; the N + injection region is led out to be used as a cathode of the photoelectrically driven avalanche diode memristor; thus, a reverse bias state can be achieved under the condition that periodic pulse signals are applied, the device can be flexibly switched between a high resistance state of a linear region and a low resistance state of an avalanche region through an external bias condition, and therefore a photoelectric controllable memristor mechanism is achieved based on a standard CMOS technology.
Owner:HUNAN NORMAL UNIVERSITY
An Independent Control System of Inlet and Outlet with Pressure Compensation
ActiveCN109630504BReduce usageImprove handlingFluid-pressure actuator testingServomotor componentsControl systemControl valves
Owner:TAIYUAN UNIV OF TECH
A preparation method of mixed-phase nano tio2 with different colors
InactiveCN104030345BHigh solar photocatalytic activitySimple preparation processPhysical/chemical process catalystsTitanium dioxideElectronic band structurePhotocatalytic degradation
Owner:ZHEJIANG UNIV
Variable valve lift mechanism and its control method
ActiveCN105221206BImprove work efficiencyImprove economyValve arrangementsInternal combustion piston enginesManufacturing cost reductionEngineering
The invention relates to a variable valve lift mechanism and a control method thereof. The variable valve lift mechanism comprises a rotatable cam shaft and a cam installed on the cam shaft and further comprises a rocker arm assembly, a swing assembly and a feeding shaft. The rocker arm assembly is driven by the cam to swing and comprises a regulation and control idler wheel located on one side of the rocker arm assembly. The swing assembly is driven by the rocker arm assembly to swing so as to open and close a valve and provided with a feeding window. The feeding shaft is contained in the swing assembly in a rotatable manner and provided with a feeding groove. When the feeding shaft is rotated, the feeding groove and the feeding window are aligned or staggered. The regulation and control idler wheel makes rolling contact with the feeding shaft through the feeding window, so that the swing assembly is driven to swing. According to the variable valve lift mechanism, no phase correcting device needs to be additionally arranged, the manufacturing cost can be reduced, the valve lift amount can be continuously regulated and controlled, and power output is more linear.
Owner:JIANGSU HAILONG ELECTRICAL APPLIANCE
A kind of method and semiconductor that carry out p-type doping to tmdcs based on ptfe
ActiveCN113451139BThe effect of the method is obviousLong-term stabilitySemiconductor/solid-state device manufacturingSemiconductor devicesPhysical chemistryCompounds of fluorine
The invention discloses a method and semiconductor for p-type doping of TMDCs based on PTFE, belonging to the technical field of advanced semiconductor devices. The method is as follows: transferring TMDCs material to a fluorine-containing ultra-flat PTFE substrate, thereby constructing a TMDs And the vertical heterointerface of PTFE, the interface has efficient hole doping regulation for TMDCs, by measuring the spectral structure and fluorescence lifetime of the transferred TMDCs, and characterizing the change of its energy band structure, it can be determined to realize the p-type of TMDCs Doping to obtain p-type doped TMDCs semiconductors, thus expanding the application in optoelectronic or electronic devices. The invention realizes the conversion of two-dimensional TMDCs from n-type to p-type doping at room temperature, and the adjustment effect is long-term, stable and suitable for large-scale production requirements. The method is easy to operate and has single atomic layer controllable doping accuracy. The strong electronegativity effect of fluorine compounds realizes the hole-doping type of 2D TMDCs.
Owner:FUDAN UNIV
A high-efficiency metasurface device based on catenary structure
Owner:INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
Polymer network topology heterogeneous system based on dynamic covalent bonds and application method thereof
The invention discloses a polymer network topology heterogeneous system based on dynamic covalent bonds. The polymer topology heterogeneous network system is a cross-linked polymer containing the dynamic covalent bonds, and the topology structure in the polymer topology heterogeneous network system is in a thermodynamic unsteady state temporarily fixed by the dynamic covalent bonds; and when the action and the temperature of a bond exchange catalyst reach the activation temperature of the dynamic covalent bonds or above, the dynamic covalent bonds are subjected to a bond exchange reaction, andthe topological structure is changed. The invention further provides an application method of the polymer network topology heterogeneous system based on the dynamic covalent bonds. The topological structure in the high-molecular network topological heterogeneous system provided by the invention can generate specific isomerism as required to realize regulation and control of related physical properties of the polymer, and the isomerism process of the topological structure can be carried out regionally step by step for multiple times.
Owner:ZHEJIANG UNIV
Hydrogel controlled by hydrogen bond and pi-pi accumulation biswitch and preparation and application thereof
ActiveCN101670110ARealize continuous controlGood pH responsivenessOrganic active ingredientsAntipyreticSide effectControl system
Owner:江苏先进无机材料研究院
Electric Field Tuned Optical Parametric Oscillator Based on mgo:ppln Domain Duty Cycle
ActiveCN105591275BRealize continuous controlImprove output performanceLaser detailsFrequency conversionOptoelectronics
Owner:CHANGCHUN UNIV OF SCI & TECH
Negative resistance clamping silicon controlled rectifier memory resistor device and manufacturing method thereof
PendingCN113838970ARealize continuous controlImprove anti-electromagnetic interference performanceSolid-state devicesSemiconductor devicesSilicon-controlled rectifierPolysilicon gate
The invention discloses a negative resistance clamping silicon controlled rectifier rectification memristor and a manufacturing method thereof. A DN-Well region is arranged on a substrate P-Sub, and a first P-Well region, an N-Well region and a second P-Well region are arranged in the DN-Well region; a first shallow slot isolation region, a first P + injection region, a second shallow slot isolation region, a first N + injection region, a first polysilicon gate, a third shallow slot isolation region and a second P + injection region are arranged in the first P-Well region, and a fourth shallow slot isolation region stretches across the junction of the first P-Well region and the N-Well region; a second N + injection region, a fifth shallow slot isolation region and a third N + injection region are arranged in the N-Well region; a sixth shallow slot isolation region stretches across the junction of the N-Well region and the second P-Well region; a third P + injection region, a seventh shallow slot isolation region, a second polysilicon gate, a fourth N + injection region, an eighth shallow slot isolation region, a fourth P + injection region and a ninth shallow slot isolation region are arranged in the second P-Well region; in this way, continuous adjustment and control of the high resistance state and the low resistance state are achieved, and the requirement for large-scale on-chip integration of the silicon-based memristor based on the standard microelectronic technology is met.
Owner:HUNAN NORMAL UNIVERSITY
Who we serve
- R&D Engineer
- R&D Manager
- IP Professional
Why Patsnap Eureka
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com