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44results about How to "Realize continuous control" patented technology

Phase mask plate of integer-order vortex beam with fractional-order vortex profile and optical path system

The invention provides a phase mask plate of an integer-order vortex beam with a fractional-order vortex profile. A generated novel vortex beam simultaneously has the topological charge of the integer-order vortex and the light intensity profile of the fractional-order vortex. The phase mask plate generates a vortex beam by inputting the phase mask plate into a reflection type spatial light modulator, wherein the transmission rate function expression of the phase mask plate is a formula which is as shown in the specification, wherein A (x, y) is an amplitude modulation function and is used forchanging the profile of the incident coherent light field so as to improve the quality of the vortex beam and avoid the interference of a phase modulation signal and an amplitude modulation signal; ang (.) is an angle-solving function of an imaginary number; rem (.) is a complementary function; m is the topological charge value of the beam, and n is a phase step factor, wherein n is greater thanm; the phase step can be compressed by changing the value of n, so that the required phase step size is generated; theta is the polar angle of a polar coordinate system; and 2 <pi>x/d is a blazed grating item, and is used for generating a blazed grating with a period of d, so that the energy is concentrated in +1 stage diffraction.
Owner:XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI

Multi-element graded metal based nanoparticle catalyst and preparation method therefor

The invention discloses a multi-element graded metal based nanoparticle catalyst and a preparation method therefor. The catalyst is a composite catalyst which consists of a carrier and graded metal based nanoparticles carried on the carrier, wherein a mass ratio of the graded metal based nanoparticles to the carrier is (0.01-4) to 1; constituent elements of the graded metal based nanoparticles are metal elements, which are not radioactive and can stably exist in an aqueous solution, in a periodic table of elements; and constituent components and content of particles from inside to outside are changed in a graded mode. The multi-element graded metal based nanoparticle catalyst solves the problems that an original catalyst is high in cost and insufficient in activity, and simultaneously realizes continuous control on electronic structures and crystal face stress of metal components in the catalyst. The multi-element graded metal based nanoparticle catalyst disclosed by the invention has a novel graded hierarchical structure; and continuous modulation on stress and the electronic structure of each component can be realized by regulating metal composition, so that an effective method is provided for synthesizing the multi-element graded metal based nanoparticle catalyst.
Owner:HARBIN INST OF TECH

Method for preparing different colors of mixed phase nano TiO2

The invention relates to a method for preparing different colors of mixed phase nano TiO2. The key technology is carrying out thermal treatment on amorphous nano TiO2 which is synthesized by a water phase in one step at different temperature. The method concretely comprises the following steps: firstly, mixing and reacting a Ti(SO4)2 solution and ammonia water under an ice-water bath condition to obtain amorphous hydrate sol of TiO2, centrifugally washing, and then evaporating the sol at low temperature, so as to obtain amorphous phase nano TiO2; respectively carrying out thermal treatment on evaporated amorphous phase nano TiO2 solid at different temperature, so as to obtain different colors of amorphous and anatase mixed-phase nano TiO2. A series of different colors of mixed phase nano TiO2 can be prepared by adopting a gradient heat treatment method for the first time. The method is simple to operate, available in raw materials, low in cost and friendly to environment. Continuous regulation of an energy band structure is achieved by the prepared different colors of mixed phase nano TiO2, and the mixed phase nano TiO2 has excellent performances and positive significance in photocatalytic degradation of organic pollutants, and has a good application prospect.
Owner:ZHEJIANG UNIV

Dynamic polarization regulation and control device based on anisotropic chiral metamaterial

InactiveCN113267901AGreat circle transition dichroismRealize continuous controlPolarising elementsRefractive indexUltraviolet
The invention discloses a dynamic polarization regulation and control device based on an anisotropic chiral metamaterial. The dynamic polarization regulation and control device is composed of a metal reflecting layer, a layer of refractive index adjustable material and a layer of chiral structure (planar anisotropic structure). Mainly based on the microcavity interference effect, adjustable materials with different refractive indexes are filled in the microcavity between the planar anisotropic chiral metamaterial and the metal reflecting layer, external excitation (such as electricity, light, heat, humidity and the like) is applied to the refractive index adjustable materials, the refractive index of the materials is dynamically adjusted, the interference effect of the microcavity is changed, and thus, continuous regulation and control among linearly polarized light, elliptically polarized light and circularly polarized light are realized. The device has the advantages that polarization regulation and control are convenient, the device size is small, the integration level is high, device processing is compatible with an existing integration process, and the working wavelength can be regulated and controlled at will from ultraviolet to millimeter wave bands. The dynamic polarization regulation and control device has wide application prospects in the fields of stereoscopic display, polarization illumination and the like.
Owner:SICHUAN UNIV

Method for adjusting surface energy level and energy band of semiconductor material

The invention provides a method for adjusting surface energy level and energy band of a semiconductor material, and belongs to the technical field of the semiconductor material. The method provided bythe invention is based on oxygen plasma processing, is capable of continuously controlling the surface chemical composition, the defect state density, the energy level and the energy band of the semiconductor material on premise of not affecting the light transmittance and the conductivity of the semiconductor material, and reduces the back recombination of the interface carrier. The plasma surface treatment technology designed by the invention uses the radio-frequency discharge as the plasma excitation method, uses the oxygen plasma to process the semiconductor material, selectively removesthe doped atoms of the surface of the material by utilizing the characteristics of the low macroscopic temperature and the high particle energy of the radio-frequency plasma and the extremely close atomic radius of the oxygen and the atomic radius of the semiconductor material, and prepares the semiconductor material with the continuously-adjustable surface energy level and energy band through optimizing the parameters of the power, the processing time, etc.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Method and system for producing high-controllability off-axis optical bottle

The invention provides a method and system for producing a high-controllability off-axis optical bottle, and the method comprises the steps: simulating the interference between a plane wave and a round Pearl Gaussian beam through a computer, obtaining a phase hologram, and loading the phase hologram to a reflective spatial light modulator; drawing a composite second-order chirp vortex phase on a computer according to the optical parameters, and loading the composite second-order chirp vortex phase to a transmission-type spatial light modulator; irradiating a reflective spatial light modulator by using a Gaussian beam, enabling reflected light to pass through a spatial filtering system, and selecting positive first-order stripes to obtain a round Pearl Gaussian beam; a circular Pearl Gaussian beam passes through a transmission-type spatial light modulator to obtain a circular Pearl Gaussian beam subjected to composite second-order chirp vortex phase modulation, and the circular Pearl Gaussian beam is transmitted in vacuum or interference-free air, so that strong focusing can be formed for multiple times in the transmission process, and an off-axis optical bottle is formed. The method and system can continuously regulate and control the off-axis optical bottle, is more efficient in the aspects of particle capture and control, and is high in degree of freedom.
Owner:SOUTH CHINA NORMAL UNIVERSITY

Submicron or micron monodisperse single crystal conductive gold ball and preparation method thereof

The invention discloses a submicron or micron monodisperse single crystal conductive gold ball and a preparation method thereof. The preparation method comprises the following steps that a small-size monodisperse single crystal conductive gold ball colloidal solution is adopted as a seed solution; chloroauric acid and poly (diallyldimethylammonium chloride) are added into the seed solution, stirring is conducted at a room temperature for 2 hours, and reacting is conducted at 180 DEG C-200 DEG C for 1 hour-2 hours to prepare a single crystal gold nano octahedral colloidal solution; a polishing agent is added into the single crystal gold nano octahedron colloidal solution, and reacting is conducted at 100 DEG C for 5 hours to prepare a monodisperse single crystal conductive gold ball colloidal solution with the enlarged size; and the monodisperse single crystal conductive gold ball colloidal solution with the enlarged size is adopted as a seed solution, the above seed solution treatment step is executed again, and iteration is carried out until the size of the single crystal conductive gold ball reaches a preset requirement. The conductive gold ball is uniform in size and good in monodispersity, the preparation technology is simple and easy to operate, the requirement for instruments and equipment is low, and complex and expensive instruments do not need to be used.
Owner:HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI

Explosion-proof solar sector cold protection gate capable of rotating by 360 degrees

The invention relates to an explosion-proof solar sector cold protection gate capable of rotating by 360 degrees. The explosion-proof solar sector cold protection gate capable of rotating by 360 degrees is suitable for stock bin truck loading of various sorts of ore, coal, ash, chemical products, cement, sand and other bulk materials and can achieve truck loading operation particularly under the condition that the outside environment temperature is extremely low. The explosion-proof solar sector cold protection gate comprises an explosion-proof solar cell system, an explosion-proof solar heating system, a stock bin, a stock bin warm-keeping interlayer, a movable cold protection bulkhead gate support assembly, a gate middle connecting section, a middle connecting rotation drive assembly, a rotation feeding section and a combined sector gate assembly. The explosion-proof solar cell system and the explosion-proof solar heating system are arranged outside and inside the stock bin warm-keeping interlayer. The movable cold protection bulkhead gate support assembly is installed on a discharging bin opening of the stock bin and the interlayer outer wall and further comprises a warm-keeping roller bulkhead gate, a support and an electric-hydraulic pusher. The combined sector gate assembly comprises a combined sector gate, a hydraulic power unit and a hydraulic cylinder.
Owner:CHINA COAL SCI & TECH GRP NANJING DESIGN & RES INST CO LTD

A real-time controllable wave absorber based on ferroelectric ferromagnetic composite film loading

The invention discloses a real-time controllable wave absorber based on ferroelectric ferromagnetic composite film loading. Including a dielectric plate (1), the front surface of the dielectric plate (1) is covered with a ferroelectric ferromagnetic composite film (2), and the surface of the ferroelectric ferromagnetic composite film (2) is provided with a metal microstrip frame ( 3), the surface of the ferroelectric ferromagnetic composite film (2) is also provided with a cross-shaped metal microstrip (4) in the center, and the cross-shaped metal microstrip (4) passes through a metal via hole (5) in the middle and is arranged on the dielectric plate (1) The metal layer (7) on the back is connected; the metal layer (7) covers the back of the dielectric board (1). The structure can adjust the wave absorption peak position of the wave absorber in real time by utilizing the characteristic that the dielectric constant and the magnetic permeability of the ferroelectric ferromagnetic composite film (2) can be continuously changed under an external bias voltage. The invention can use bias electric field or magnetic field to independently adjust the wave absorption peak position of the wave absorber in real time, and can realize low reflection loss, and has the characteristics of simple structure, flexible and controllable frequency band, and strong wave absorption ability.
Owner:GUIZHOU MINZU UNIV

Low-power-consumption CBRAM device based on titanium-silver alloy and preparation method and application of low-power-consumption CBRAM device

The invention provides a low-power-consumption CBRAM device based on titanium-silver alloy and a preparation method and application of the low-power-consumption CBRAM device. The low-power-consumptionCBRAM device comprises a bottom electrode, an insertion layer on one side surface of the bottom electrode, a resistive layer located on the surface of the side, away from the bottom electrode, of theinsertion layer, and a top electrode located on the surface of the side, away from the bottom electrode, of the resistive layer, wherein the insertion layer is made of Ti and Ag alloy materials. According to the low-power-consumption CBRAM device based on the titanium-silver alloy, Ti and Ag alloy is adopted to replace a traditional CBRAM device prepared from Ag, resistance distribution in a high-resistance state and a low-resistance state is more concentrated, and the stability of device performance is further improved; and according to the low-power-consumption CBRAM device based on the titanium-silver alloy, continuous regulation and control of conductivity can be achieved under lower power consumption, and new possibility is provided for establishment of a low-power-consumption memristor array and development of a low-power-consumption cranial nerve-like morphological chip.
Owner:HUBEI UNIV

Photoelectric driving avalanche diode memristor and manufacturing method thereof

The invention discloses a photoelectric driving avalanche diode memristor device and a manufacturing method thereof, a substrate P-Sub is provided with an NBL region, the NBL region is provided with a first annular DN-Well region, the first annular DN-Well region is internally provided with a first annular shallow trench isolation region and an annular N + injection region, and a second annular shallow trench isolation region is located at the junction of the first annular DN-Well region and an annular P-epi region; an annular P-Well region and a polycrystalline silicon ring gate are arranged in the annular P-epi region, an N-Well region is arranged in the second DN-Well region, and a P + injection region is arranged in the N-Well region; the P + injection region is led out to be used as an anode of the photoelectrically driven avalanche diode memristor; the N + injection region is led out to be used as a cathode of the photoelectrically driven avalanche diode memristor; thus, a reverse bias state can be achieved under the condition that periodic pulse signals are applied, the device can be flexibly switched between a high resistance state of a linear region and a low resistance state of an avalanche region through an external bias condition, and therefore a photoelectric controllable memristor mechanism is achieved based on a standard CMOS technology.
Owner:HUNAN NORMAL UNIVERSITY

Electric Field Tuned Optical Parametric Oscillator Based on mgo:ppln Domain Duty Cycle

An MgO:PPLN-based electric field tuning light parameter oscillator with a controllable crystal domain duty ratio belongs to the field of solid laser. The electric field tuning light parameter oscillator settles the following problems in an existing optical parameter oscillator: limitation by a single crystal domain duty ratio and incapability of being switched between high-precision wide tuning and high frequency conversion efficiency. According to the MgO:PPLN-based electric field tuning light parameter oscillator, an isolator performs return light isolation of pump light which is generated by a laser pump source; two flat concave lenses form a confocal optical parameter oscillation chamber; after pump light is focused by a focusing coupling system, the pump is arranged at an MgO:PPLN crystal at the common focus in the chamber; The crystal has a polarized period positive and negative crystal domain diagonal segmented structure. A driving power supply exerts a voltage on the crystal. An electric controlled precise translation platform is made to move through a computer. The crystal domain duty ratio is changed through transversely moving a light inputting position where the crystal is located. According to the MgO:PPLN-based electric field tuning light parameter oscillator, the MgO:PPLN crystal with controllable crystal domain duty ratio is used as a frequency conversion medium; and free switching between high-precision wide tuning and high frequency conversion efficiency is realized according to an actual requirement.
Owner:CHANGCHUN UNIV OF SCI & TECH

Negative resistance clamping silicon controlled rectifier memory resistor device and manufacturing method thereof

The invention discloses a negative resistance clamping silicon controlled rectifier rectification memristor and a manufacturing method thereof. A DN-Well region is arranged on a substrate P-Sub, and a first P-Well region, an N-Well region and a second P-Well region are arranged in the DN-Well region; a first shallow slot isolation region, a first P + injection region, a second shallow slot isolation region, a first N + injection region, a first polysilicon gate, a third shallow slot isolation region and a second P + injection region are arranged in the first P-Well region, and a fourth shallow slot isolation region stretches across the junction of the first P-Well region and the N-Well region; a second N + injection region, a fifth shallow slot isolation region and a third N + injection region are arranged in the N-Well region; a sixth shallow slot isolation region stretches across the junction of the N-Well region and the second P-Well region; a third P + injection region, a seventh shallow slot isolation region, a second polysilicon gate, a fourth N + injection region, an eighth shallow slot isolation region, a fourth P + injection region and a ninth shallow slot isolation region are arranged in the second P-Well region; in this way, continuous adjustment and control of the high resistance state and the low resistance state are achieved, and the requirement for large-scale on-chip integration of the silicon-based memristor based on the standard microelectronic technology is met.
Owner:HUNAN NORMAL UNIVERSITY
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