Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Low-power-consumption CBRAM device based on titanium-silver alloy and preparation method and application of low-power-consumption CBRAM device

A low-power, alloy technology, applied in the field of information storage, can solve the problems of low energy consumption and difficult to achieve, and achieve the effects of reducing energy consumption, improving stability, and concentrating resistance distribution.

Pending Publication Date: 2021-02-26
HUBEI UNIV
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the human brain, the energy consumed by the process of information transmission and storage is very low, which is difficult to achieve in practical devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low-power-consumption CBRAM device based on titanium-silver alloy and preparation method and application of low-power-consumption CBRAM device
  • Low-power-consumption CBRAM device based on titanium-silver alloy and preparation method and application of low-power-consumption CBRAM device
  • Low-power-consumption CBRAM device based on titanium-silver alloy and preparation method and application of low-power-consumption CBRAM device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] like figure 1 As shown, the invention provides a kind of low power consumption CBRAM device based on titanium-silver alloy, comprising:

[0054] bottom electrode 1;

[0055] Insertion layer 2, located on the surface of one side of the bottom electrode 1;

[0056] The resistance switch layer 3 is located on the surface of the insertion layer 2 away from the bottom electrode 1;

[0057] The top electrode 4 is located on the surface of the resistive layer 3 away from the bottom electrode 1;

[0058] Wherein, the material of the insertion layer 2 is Ti and Ag alloy materials.

[0059] It should be noted that, in the embodiment of the present application, the material of the bottom electrode 1 is one of Ti, Pt, W or TiN, the material of the resistive layer 3 is an oxygen-containing germanium telluride material, and the oxygen-containing germanium telluride material is GeO x , the material of the top electrode 4 is one of Pt or Ti; the thickness of the bottom electrode 1...

Embodiment 2

[0072] The CBRAM device in this embodiment has the same structure and preparation method as the CBRAM device in Embodiment 1. The difference is that in the step of preparing the insertion layer in this embodiment, the sputtering power of the silver target is 20W, and other parameters are Same as Example 1.

Embodiment 3

[0074] The CBRAM device in this embodiment has the same structure and preparation method as the CBRAM device in Embodiment 1. The difference is that in the step of preparing the insertion layer in this embodiment, the sputtering power of the silver target is 40W, and other parameters are Same as Example 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a low-power-consumption CBRAM device based on titanium-silver alloy and a preparation method and application of the low-power-consumption CBRAM device. The low-power-consumptionCBRAM device comprises a bottom electrode, an insertion layer on one side surface of the bottom electrode, a resistive layer located on the surface of the side, away from the bottom electrode, of theinsertion layer, and a top electrode located on the surface of the side, away from the bottom electrode, of the resistive layer, wherein the insertion layer is made of Ti and Ag alloy materials. According to the low-power-consumption CBRAM device based on the titanium-silver alloy, Ti and Ag alloy is adopted to replace a traditional CBRAM device prepared from Ag, resistance distribution in a high-resistance state and a low-resistance state is more concentrated, and the stability of device performance is further improved; and according to the low-power-consumption CBRAM device based on the titanium-silver alloy, continuous regulation and control of conductivity can be achieved under lower power consumption, and new possibility is provided for establishment of a low-power-consumption memristor array and development of a low-power-consumption cranial nerve-like morphological chip.

Description

technical field [0001] The invention relates to the technical field of information storage, in particular to a titanium-silver alloy-based low-power CBRAM device and its preparation method and application. Background technique [0002] With the advent of the 5G era, people's requirements for information storage are getting higher and higher. However, the current mainstream flash memory (Flash) memory faces a series of shortcomings such as high operating voltage, slow operating speed, and high power consumption, which seriously limits the use of Flash memory. Wide application in high-tech fields. Therefore, researchers began to study the next-generation non-volatile memory. [0003] In recent years, resistive RAM (RRAM) has a series of advantages such as compatibility with complementary metal oxide (Complementary Metal Oxide Semiconductor, CMOS) process, fast operation speed, low power consumption, simple structure, small cell size, and easy three-dimensional integration. A...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00G06N3/063
CPCG06N3/063H10N70/245H10N70/881H10N70/011
Inventor 王浩郑意伟陈钦马国坤
Owner HUBEI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com