69 results about "Atomic radius" patented technology

This invention provides a new film forming method in which, on the occasion that pressure is decreased by pressure decreasing means which was connected to a film forming chamber, and a film is formed by evaporating an organic compound material from a deposition source in the film forming chamber, minute amounts of gas (silane series gas) which comprises smaller particles than particles of the organic compound material, i.e., a material with a smaller atomic radius are flowed, and the material with a small atomic radius is made to be included in an organic compound film.

Disclosed in this invention is a family of ternary and multi-nary iron-based new compositions of bulk metallic glasses which possess promising soft magnetic properties, and the composition selection rules that lead to the design of such new compositions. The embodiment alloys are represented by the formula M_aX_bZ_c, where M represents at least one of ferromagnetic elements such as iron and may partly be replaced by some other substitute elements; X is an element or combinations of elements selected from those with atomic radius at least 130% that of iron and in the mean time is able to form an M-rich eutectic; and Z is an element or combinations of elements selected from semi-metallic or non-metallic elements with atomic radius smaller than 86% that of iron and in the meantime is able to form an M-Z eutectic; a, b, c are the atomic percentage of M, X, Z, respectively, and a+b+c=100%. When 1%<b<15% and 10%<c<39%, the alloys show a bulk glass forming ability to cast amorphous ribbons/sheets at least 0.1 mm in thickness. When 3%<b<10% and 18%<c<30%, the alloys show a bulk glass forming ability to cast amorphous rods at least 1 mm in diameter. The amorphous phase of these as-cast sheets/rods is at least 95% by volume. This invention also discloses the existence of nano-crystalline phase outside of the outer regime of the bulk glass forming region mentioned above.

The invention relates to a high-specific-strength high-plasticity refractory high-entropy alloy and a preparing method thereof, and belongs to the technical field of metal materials. The expression isVaNbbZrcTidMeNfPg, wherein M, N, P can be the elements such as Cr, Al, Ni, Fe, Si, O, B, C, and N; a is no less than 15% and no more than 20%, b is no less than 15% and no more than 25%, c is no lessthan 30% and no more than 50%, d is no more than 30% and no less than 50%, e is no less than 0 and no more than 5%, f is no less than 0 and no more than 5%, g is no less than 0 and no more than 5%, and the sum of a, b, c, d, e, f and g is 100%; and meanwhile, the valence electron concentration VEC of the alloy is no less than 4.1 and no more than 4.4, and the atomic radius size difference Delta is no less than 5.5% and no more than 6.4%. The alloy is prepared by various methods, the density of the VaNbbZrcTidMeNfPg alloy is less than 6.5 g*cm<-3>, the room temperature tensile strength is morethan 900 MPa, the plastic deformation is more than 15%, and the high specific strength and high plasticity are achieved; and after the temperature is increased to 600 DEG C, the weakening of the material is not very obvious, after the temperature is increased to 800 DEG C, the material can still maintain a certain strength, and the alloy has a certain storage ability for H2 and can be used in thefield of energy materials.

The invention discloses a hexabasic high-entropy alloy material. The hexabasic high-entropy alloy material is prepared from, by atomic percent, 18.18%-22.22% of Co, 18.18%-22.22% of Cr, 9.1%-11.12% of Cu, 18.18%-22.22% of Fe, 18.18%-22.22% of Ni and 2.17%-18.18% of Ti, wherein the element Ti has the large atomic radius, and the severe lattice distortion effect of the element Ti can effectively enhance a solid solution phase. In addition, the element Ti has the small valence electron concentration and tends to form a compound phase, and therefore the precipitation enhancing function is achieved. An obtained hexabasic CoCrCu0.5FeNiTi0.5 high-entropy alloy has high strength and plasticity, wherein the yield strength is 850 MPa, the compressive strength reaches 1,650 MPa, and meanwhile the plasticity reaches 31.5%. The alloy has good strength and plasticity cooperation, and a preparation method is simple and reliable. The invention further discloses the preparation method of the hexabasic high-entropy alloy material.

The invention discloses a difluoro-bithiophene polymer as well as a preparation method and application thereof to an FET (field effect transistor). The structural formula of the difluoro-bithiophene polymer is as shown in formula I, wherein n is a natural number ranging from 5 to 100. According to the invention, a fluorine atom is introduced to a thiophene ring to obtain difluoro-bithiophene (2FBT); the fluorine atom has a strong electron-withdrawing property, the atomic radius is small, and the interaction with other atoms such as a hydrogen atom or a sulphur atom is relatively strong, so that the introduction of the fluorine atom can improve the molecular planarity and promote molecular stacking. A polymer taking 2FBT as a donor has relatively low LUMO energy level, and the electron injection of a transport layer is relatively easy, so that the bipolar transfer characteristic can be expressed. The difluoro-bithiophene polymer provided by the invention can be used as a semiconducting material to prepare an OFET (organic field effect transistor). The OFET prepared by taking the difluoro-bithiophene polymer as a semiconducting layer has relatively high migration rate (mu), thereby having a good application prospect in bipolar OFETs.

An objective of the invention to provide an alloy article that exhibits even better mechanical properties and/or even higher corrosion resistance than conventional high entropy articles without sacrificing the attractive properties thereof, a product formed of the alloy article, and a fluid machine having the product. An alloy article according to the invention has a predetermined chemical composition comprising: Co, Cr, Fe, Ni and Ti, each within a range of 5 atomic % or more and 35 atomic % or less; Mo within a range of more than 0 atomic % and less than 8 atomic %; an element with a larger atomic radius than the atomic radiuses of Co, Cr, Fe and Ni within a range of more than 0 atomic % and 4 atomic % or less; and a balance of inevitable impurities.

The invention relates to bulk amorphous alloys of Zr-Cu-Al-Be series with an extra-wide supercooling liquid phase region. The series of alloys take Zr52Cu40Al8 as basic ingredients, and take the metallic element Be with the minimum atomic radius as the alloying element. The composition of the series of alloy is determined through the following formula: (Zr52Cu40Al8)xBey, wherein x is the molar content of Zr52Cu40Al8, y is the molar content of Be, 80<=x<=100, 0<=y<=20, and x+y=100. The series of alloys can generate bulk amorphous alloys with the critical dimension not less than 3mm, the maximum supercooling liquid phase region reaching 123K and with excellent thermal stability. The series of alloys integrate better glass-forming ability and extra-wide supercooling liquid phase region, and can be widely used in the fields of precise parts, microelectronic components and the like.

A method for generating n-type carriers in a semiconductor is disclosed. The method includes supplying a semiconductor having an atomic radius. Implanting an n-type dopant species into the semiconductor, which n-type dopant species has a dopant atomic radius. Implanting a compensating species into the semiconductor, which compensating species has a compensating atomic radius. Selecting the n-type dopant species and the compensating species in such manner that the size of the semiconductor atomic radius is inbetween the dopant atomic radius and the compensating atomic radius. A further method is disclosed for generating n-type carriers in germanium (Ge). The method includes setting a target concentration for the carriers, implanting a dose of an n-type dopant species into the Ge, and selecting the dose to correspond to a fraction of the target carrier concentration. Thermal annealing the Ge in such manner as to activate the n-type dopant species and to repair a least a portion of the implantation damage. Repeating the implantation and the thermal annealing until the target n-type carrier concentration has been reached.

The invention discloses an iron-based nano amorphous magnetic core in the technical field of nano amorphous alloys. The iron-based nano amorphous magnetic core comprises, by weight, 71-75 parts of Fe, 9-15 parts of Si, 12.5-13.5 parts of B, 0.8-1.2 parts of Cu and a promoting material, wherein the promoting material is 2-4 parts of Nb or 0.5-3 parts of Mo. The iron-based nano amorphous magnetic core has the advantages that the use amount of the raw materials is optimized, the Fe is used as the base raw material, the Si and the B which are small in atomic radius are used to promote the formation of the amorphous alloy, the interaction among the Cu, the Nb (or Mo) and the other raw materials is utilized to allow the crystalline grain in the prepared iron-based nano amorphous magnetic core to be fine, a magnetic domain crystal structure is optimized, and accordingly the initial permeability of the iron-based nano amorphous magnetic core in volt-ampere characteristic tests is increased, the volt-ampere characteristic output of the iron-based nano amorphous magnetic core is allowed to be gentle, and the application performance of the iron-based nano amorphous magnetic core in sensors, electronic inductor components or current transformers is optimized.

The invention provides a display device which comes into being through taking advantage of a hard transparent substrate, which has the characteristics of the inorganic glass and the plastics and is good in curve resistance, and laminating various electronic materials used by the display devices. The hard transparent substrate can be obtained through hardening an indurative resin indicated by a general formula (1). The indurative resin has a compact structure part (A) which has a Kp calculated according to a formula (2) ranging from 0.68 to 0.8 and a loose structure part (B) which has a Kp less than 0.68, wherein, the weight ratio of the structure parts (A)/(B) ranges from 0.01 to 5.00. The indurative resin also has a least one unsaturated link, with an average molecular weight ranging from 800 to 60,000. -{(A)-(B)m}n- (1) (m and n are integers greater than 1) Kp=An.Vw.p/Mw (2) (An= Avogadro constant, Vw= van der waals volume, p=density, Mw=molecular weight, Vw=summation of Va, Va=4pi/R3-summation of1/3pihi2(3Ra-hi), hi= Ra- (Ra2+di2-Ri2)/2di, Ra= atomic radius, Ri=radius of bonded atom, and di= interatomic spacing).

The invention relates to a preparation technology of a silicon-carbon composite negative electrode material. In the preparation technology, a coated modified auxiliary material is used as high-purityindustrial silicon, and a graphite main material is low-ash anthracite. Through innovative adoption of glucose coating carbonization, a coating material is approximately nanocrystalized, so that a coating layer is formed more perfectly and uniformly; fluorocarbon resin is used, fluorine is an element with unique and stable properties, and in the periodic table, fluorine has the strongest electronegativity and the lowest polarizability and has the atomic radius is second only to that of hydrogen; therefore, C-F bonds are very difficultly destroyed by light, heat, electrochemical factors and thelike, F atoms have more negative charges, the adjacent fluorine atoms are mutually exclusive, the fluorine atoms on a fluorine-containing hydrocarbon chain are spirally distributed along C-C bonds ofgraphite, and peripheries of the C-C bonds are surrounded by the fluorine atoms to form a highly-stable three-dimensional protection barrier to protect the stability of the graphite, so that the graphite structure in the charge and discharge process of a lithium battery is improved and the cycle life is increased; the first-time capacity of the industrial silicon is lower by 1500-2000mah/g.

A highly reliable semiconductor device having a multilayer structure including an insulating film, an adjacent conductive film, and a main conductive film in which adhesive fractures, voids and disconnections are unlikely to occur. Regarding main constituent elements of the adjacent conductive film and the main conductive film, lattice mismatching is made small, the melting point the adjacent conductive film is set to be not less than 1.4 times that of the main constituent element of the main conductive film, the adjacent conductive film contains at least one different kind of element, the difference between the atomic radius of an added element and that the atomic radius the adjacent conductive film is set to be not more than 10%, and/or bond energy between the added element and silicon (Si) is not less than 1.9 times that of the main constituent element of the adjacent conductive film and silicon (Si).