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Thermoelectric semiconductor

A technology of thermoelectric semiconductors and substrates, which is applied in the manufacture/processing of thermoelectric devices, materials for junction leads of thermoelectric devices, selenium/tellurium compounds, etc., can solve difficult problems and achieve high conductivity

Inactive Publication Date: 2014-12-31
TOYOTA JIDOSHA KK +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, it is difficult to improve all of these properties simultaneously; instead, several attempts have been made to improve one or the other of these properties of thermoelectric semiconductors

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0069] according to Figure 4 Flowchart in , fabrication of Na-doped thermoelectric semiconductors.

[0070] Preparation of raw material slurry:

[0071] A slurry was prepared by mixing the following materials in 100 mL of ethanol.

[0072] Matrix material

[0073] Bismuth chloride (BiCl 3 ), 2.0 g

[0074] Tellurium Chloride (TeCl 4 ), 12.8 g

[0075] Antimony Chloride (SbCl 3 ), 5.8 grams.

[0076] reduction:

[0077] 2.4 g of NaBH as reducing agent 4 A solution dissolved in 100 ml of ethanol was added dropwise to the above raw material slurry. The resulting ethanol slurry containing nanoparticles precipitated by reduction was filtered, rinsed with 500 to 5000 mL of water, then filtered and rinsed again with 300 mL of ethanol. Various adjustments were made to the amount of water used at this time, thereby adjusting the concentration of sodium ions in the sample.

[0078] Heat treatment (alloying):

[0079] Next, the slurry was charged into a closed autoclave and s...

Embodiment 2

[0096] according to Figure 7 Flowchart in , fabrication of K-doped thermoelectric semiconductors.

[0097] Preparation of raw material slurry:

[0098] A slurry was prepared by mixing the following materials in 100 mL of ethanol.

[0099] Base material:

[0100] Bismuth chloride (BiCl 3 ), 2.0 g

[0101] Tellurium Chloride (TeCl 4 ), 12.8 g

[0102] Antimony Chloride (SbCl 3 ), 5.8 grams.

[0103] reduction:

[0104] 2.4 g of NaBH as reducing agent 4 A solution dissolved in 100 ml of ethanol was added dropwise to the above raw material slurry. The resulting ethanol slurry containing nanoparticles precipitated by reduction was filtered, rinsed with 5000 ml of water, then filtered and rinsed again with 300 ml of ethanol.

[0105] Addition of dopant (K):

[0106] Heat Treatment (Alloying):

[0107] According to the doping level, the dopant element K in the range of 0.05-0.3 g was added in the form of KOH to the above ethanol slurry containing nanoparticles.

[0108...

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Abstract

A thermoelectric semiconductor includes a matrix element that forms a matrix, and a dopant element having an atomic radius that is at least 1.09 times as large as the atomic radius of the matrix element.

Description

technical field [0001] The present invention relates to thermoelectric semiconductors. Background technique [0002] In recent years, interest in technologies that reduce the proportion of energy obtained from fossil fuels has grown steadily in order to reduce emissions of carbon dioxide, which contributes to global warming. An example of such a technology is a thermoelectric semiconductor, which converts unused waste heat energy directly into electricity. A thermoelectric semiconductor is a material that can directly convert thermal energy into electrical energy, without going through the two-stage process of first converting thermal energy into kinetic energy and then converting kinetic energy into electrical energy like thermoelectric power generation. [0003] The conversion from thermal energy to electrical energy takes place by exploiting the temperature difference across the bulk formed from thermoelectric semiconductors. The voltage generated by this temperature di...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/16C01B19/00H01L35/18
CPCC01B19/002C01P2002/52H10N10/852H10N10/853H10N10/01
Inventor 村井盾哉大川内義德
Owner TOYOTA JIDOSHA KK
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