Cu-Ni-Nb ternary alloy film with low resistivity and high chemical inertia and preparation process thereof

Abstract

The invention provides a Cu-Ni-Nb ternary alloy film with low resistivity and high chemical inertia and a preparation process thereof, and belongs to the field of materials. Under the guidance of a cluster model of a stable solid solution, the selection and the addition quantity of alloying elements in the Cu film are determined, and factors such as the enthalpy of mixing, a cluster structure and atomic radius dimension are comprehensively considered, so that the solid solution alloy film with relatively high thermal stability and relatively low chemical reaction activity is formed. By adopting a solid solution structure, resistivity rising caused by mass precipitation of solute elements is avoided; due to the introduction of an element Nb with a large atomic radius, interdiffusion between Cu and surrounding media can be effectively blocked; and due to the proportional addition of the second group of elements Ni, the addition quantity of Nb can be greatly reduced, thereby reducing an electron scattering effect caused by large atom selves to a large extent, facilitating the stabilization of the Cu film and guaranteeing that the resistivity of the Cu film is minimally influenced. The Cu-Ni-Nb ternary alloy film can be expected to simultaneously have a diffusion blocking effect as well as high temperature stability.

Description

technical field [0001] The invention relates to a Cu-Ni-Nb ternary alloy film with low resistivity and high chemical inertness and its preparation process. The Cu-Ni-Nb ternary alloy film uses Ni as its main alloying element, and needs to add a small amount of The third component, Nb, belongs to the field of new materials. Background technique [0002] Copper has low resistivity and good resistance to electromigration, and is widely used as an interconnect metal in various VLSIs. However, the diffusion of Cu and the reaction between it and the surrounding medium have always prevented it from exerting its excellent performance to the maximum. For example, Cu can react with silicon or silicon oxide at a relatively low temperature (about 200 ° C). cause damage to electronic components. In order to solve the above problems, it is necessary to add a diffusion barrier layer around the Cu wire. With the development of large-scale integrated circuits, the feature size of the devi...

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Problems solved by technology

However, the diffusion of Cu and the reaction between it and the surrounding medium have always prevented it from exerting its excellent performance to the maximum. For example, Cu can react with silicon or silicon oxide at a relatively low temperature (about 200 ° C). cause damage to electronic components

How to design the amount of added elements, lack of theoretical guidance

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