20 results about "Electron scattering" patented technology

The invention relates to the technical field of copper alloy plates and strips, in particular to a high-resistivity low-resistance-temperature-coefficient copper-manganese alloy plate and strip preparation process which comprises the following steps: S1, burdening; s2, vacuum melting and casting; s3, forging is conducted; s4, hot rolling; s5, rough rolling; s6, first intermediate and finish rolling; s7, secondary medium and finish rolling; s8, finish rolling; through multiple times of rolling, high dislocation density and lattice distortion are introduced into the material, and electrons are strongly scattered; due to rolling deformation, grains in the material are lengthened in the machining direction, the number of grain boundaries is increased, electron scattering is increased, the sensitivity of the scattering to temperature changes is low, and the resistance value can be more stable at different temperatures; therefore, the copper-manganese alloy plate strip has high resistivity and a full-negative resistance temperature coefficient.

This invention relates to the field of copper alloy materials technology, and more particularly to a Cu-Fe-Re alloy based on controlled deformation and its preparation method. The alloy composition, by weight percentage, includes: 10%~20% iron, 0.2%~1.0% rare earth elements, and the balance being copper and unavoidable impurities; the rare earth elements are selected from one or more of cerium, lanthanum, and yttrium. Based on rare earth refinement, this invention, through precise control of the deformation amount, transforms the precipitated iron phase from coarse dendrites to dispersed droplets, which, after further deformation, evolve into a fibrous structure. The gaps between iron phases are significantly reduced, and the distribution becomes more compact. The optimized selection of the deformation amount achieves the best match between dislocation strengthening and second-phase strengthening. Simultaneously, in terms of electrical conductivity, by controlling the dislocation density and second-phase morphology, the electron scattering effect is minimized, achieving a synergistic improvement in strength and conductivity. The introduction of rare earth elements can purify grain boundaries, refine the as-cast structure, and improve the distribution of the second phase.

This invention relates to the field of copper alloy materials technology, specifically to a high-performance copper alloy wire and its preparation process. A high-performance copper alloy wire includes a base copper alloy wire and a corrosion-resistant protective layer. The base copper alloy wire, by mass percentage, comprises: 0.4-0.6% Cr, 0.05-0.2% Zr, 0.05-0.06% Hf, 0.01-0.03% Ce, 0.4-0.5% rare earth modified carbon nanotubes, with the balance being Cu. This invention improves the dispersibility of carbon nanotubes by first activating them with carboxylation and then modifying them with rare earth citric acid coupling agents. The uniformly dispersed carbon nanotubes can form a continuous conductive network in the copper matrix. At the same time, the lanthanum and cerium introduced during modification can purify the grain boundaries and reduce electron scattering at the grain boundaries, thereby effectively improving the conductivity of the copper alloy wire. In addition, the uniformly dispersed rare earth modified carbon nanotubes can effectively hinder dislocation movement and refine the matrix grains, thereby effectively improving the tensile strength of the copper alloy wire.

The invention provides a preparation method of an iron-chromium-aluminum alloy and an electric heating element. The preparation method comprises the following steps: preparing an alloy base material from an iron-chromium-aluminum alloy raw material; carrying out surface pretreatment on the alloy base material; injecting a non-metal ion source into the alloy base material; carrying out rapid thermal annealing treatment on the alloy base material after ion implantation to prepare the iron-chromium-aluminum alloy; the electric heating element is formed by processing the iron-chromium-aluminum alloy, and the iron-chromium-aluminum alloy is manufactured by adopting the preparation method. According to the preparation method of the iron-chromium-aluminum alloy, the non-metal ion source is doped into the iron-chromium-aluminum alloy base material through the ion implantation process, vacancy clusters are introduced below the surface layer of the alloy base material, and the nano defects are stabilized and homogenized in combination with the rapid heat treatment technology; the electron scattering mechanism of the iron-chromium-aluminum alloy is effectively regulated and controlled, the resistivity is remarkably improved, and the TCR is highly stable.

The application discloses an Al-Mg-Si alloy with good heat resistance and size stability, and the alloy is composed of the following components in percentage by mass: Mg 0.6-1.2%, Mn 0.3-0.5%, Si 0.5-0.9%, Cu 0.1-0.15%, Cr 0.15-0.2%, Zn 0.1-0.2%, Ti 0.10-0.15%, Sc 0.05-0.25%, Hf 0.05-0.25%, Bi 0.6-1.5%, and the balance of Al and inevitable impurity elements. The Al-Mg-Si alloy of some examples of the application can avoid the increase of electron scattering caused by the solid solution of Si and Fe elements in the matrix by adjusting the content of Mg and Si elements, and is beneficial to the improvement of the heat conduction performance of the alloy; the alloy contains Sc and Hf rare earth elements, so that the heat conduction performance and heat resistance of the alloy are improved; a small amount of Bi element is further added, so that the expansion of the alloy at a higher temperature is reduced, and the size stability of the alloy is improved; and the alloy is subjected to a stabilization treatment, so that the microstructure of the alloy is effectively stabilized, and the macroscopic residual stress of the hot extruded profile is obviously reduced.

The invention relates to the technical field of VR, in particular to an electron beam generation method and device based on VR and a medium, and the method comprises the steps: generating a corresponding original electron beam 3D model in a VR environment based on electron beam parameters; determining a position mapping relation between a predefined VR environment and the original 2D image data; performing image fuzzy processing and image brightness processing according to the electron beam parameters to obtain updated 2D image data; and mapping the updated 2D image data as a texture to the surface of the original electron beam 3D model, and generating a standard electron beam 3D model in a VR environment. An electron scattering effect is simulated through image blurring processing, an edge blurring effect conforming to a physical rule is generated, and intensity distribution is mapped through image brightness processing, so that an electron beam in a VR environment presents a real optical characteristic that the center is bright and the edge is gradually weak, and the fidelity visualization of the physical attribute of the electron beam is realized.

The application relates to the field of metal matrix composites and wire and cable manufacturing, in particular to a high-strength and high-conductivity copper alloy energy storage cable and a preparation method; the cable comprises, from inside to outside, a conductor core, an insulation layer, a flame-retardant armored layer and a weather-resistant sheath layer; the conductor core is uniformly dispersed with a multifunctional composite modifier in a copper matrix, the modifier has a core-shell structure and is composed of a multi-walled carbon nanotube center core, a 5-15nm silver conductive transition shell layer and a rare earth anchoring phase; the core is to construct a high-strength skeleton by using the carbon nanotube to provide physical strengthening support, and the silver transition shell layer is used to tightly fuse with the copper matrix in a microstate, so that micro-pores are eliminated to realize dense metallurgical coherent bonding; the alloy single wire is prepared by feeding the intermediate into the copper melt and assisting with ladder aging treatment, the electronic transmission channel is effectively bridged, the interface electron scattering is greatly reduced, and the technical bottleneck of the traditional metal material strong-conductivity mutual repulsion is successfully broken.

This invention relates to the field of VR technology, specifically to a VR-based electron beam generation method, device, and medium. The method includes: generating a corresponding original electron beam 3D model in a VR environment based on electron beam parameters; determining the positional mapping relationship between the predefined VR environment and the original 2D image data; performing image blurring and brightness processing according to the electron beam parameters to obtain updated 2D image data; and mapping the updated 2D image data as a texture onto the surface of the original electron beam 3D model to generate a standard electron beam 3D model in the VR environment. By simulating electron scattering effects through image blurring, an edge blurring effect conforming to physical laws is generated. Furthermore, by mapping the intensity distribution through image brightness processing, the electron beam in the VR environment exhibits realistic optical characteristics of a bright center and gradually weakening edges, thereby achieving faithful visualization of the physical properties of the electron beam.

The invention provides a copper alloy material and a preparation method thereof, and the copper alloy material comprises the following components in percentage by weight: 0.2 to 0.7 percent of Cr, 0.2 to 0.4 percent of Ti, 0.05 to 0.4 percent of Zn, 0.01 to 0.05 percent of Si, 0.005 to 0.05 percent of Re and the balance of Cu and inevitable impurity elements. Wherein Re comprises Dy and Y. According to the invention, the Cr precipitation structure improves the alloy strength, the Ti can refine the alloy lattice and enhance the thermal stability of the matrix, and the Zn and Si can reduce the electron scattering source and inhibit the reduction of the conductivity; the mixed rare earth Re can obviously refine the grain structure of the copper alloy, stabilize the grain boundary, reduce the grain boundary resistance, and meanwhile achieve the purposes of strengthening the matrix and maintaining the high-conductivity characteristic. According to the copper alloy obtained through the metal and the proportion, the strength and the conductivity can be synchronously improved on the premise that electron scattering is not remarkably increased.

The application discloses a kind of high-conductivity aluminum alloy wire and preparation method thereof, including following weight percentage of element: B is 0.01-0.05%, Si is 0.1-0.3%, Fe is 0.1-0.25%, Zn is 0.01-0.05%, Tb is 0.001-0.005%, Ce is 0.005-0.02%, V is 0.001-0.005%, Ti is 0.001-0.005%, Zr is 0.01-0.05%, Er is 0.001-0.005%, the rest is Al;The beneficial effect of the application is: B and the compound formed by Si are dispersed in aluminum alloy matrix, effectively refine grain, reduce the influence of electron scattering on grain boundary, so as to significantly improve the conductivity of aluminum alloy wire, can effectively reduce the power loss of power transmission line, improve transmission efficiency;Tb, Ce, Er and other rare earth elements interact with Fe, Zn and other elements, improve the crystal structure of alloy, strengthen the grain boundary binding force, so that aluminum alloy wire has excellent tensile strength, elongation and fatigue life, can better adapt to complex power transmission environment, improve the reliability and stability of power transmission line.

The invention discloses a preparation device of a signal monitoring line for vehicle-mounted wireless charging. The preparation device comprises a rack, and a tin scraping assembly, a zero-distance sealing butt joint bridge and a wire annealing furnace which are sequentially arranged along a wire conveying path on the rack, an outlet of the tin scraping assembly is connected with an inlet of the wire annealing furnace in a sealed mode through a zero-distance sealing butt joint bridge, and the tin scraping assembly comprises a tin scraping box, two scraping plates arranged in the tin scraping box and a sealing cover arranged above the tin scraping box. The wire annealing furnace is a closed infrared heating tunnel furnace, a furnace body of the wire annealing furnace is made of a high-temperature-resistant alloy material, and an infrared heating array and a temperature sensor are arranged in the wire annealing furnace; a mounting plate is fixedly connected to the top of the rack, double optimization of the surface state and the internal structure of the wire rod is achieved through cooperative application of inert gas protection transmission and precise annealing steps, high-resistance pollutants are prevented from being generated through the pure surface, and electron scattering is reduced through a uniform and refined internal grain structure.

This invention relates to the field of aluminum alloy production technology, specifically disclosing a method for producing high-purity, high-conductivity aluminum strip with high efficiency and low carbon emissions. The method utilizes continuous casting and rolling to produce 1085 alloy high-purity aluminum strip. While ensuring efficient, low-carbon, and low-cost production through a short process, the cold rolling process employs a three-stage fully recrystallized annealing process: intermediate annealing + cold rolling + intermediate annealing + cold rolling + finished product annealing. This produces 0-state aluminum strip with a soft texture, eliminating the formation of large grains. Through three recrystallization processes, work hardening is eliminated, solid solution impurities precipitate, the number and severity of lattice distortion are reduced, dislocation defect density is low, and free electron scattering is significantly weakened, resulting in improved conductivity. The tensile strength is only about 53 MPa, making it extremely easy to process and use. The finished product conductivity is ≥37.5 mS / m, an improvement of about 3% compared to traditional processes, making it suitable for high-conductivity applications such as power equipment.

The invention discloses a semiconductor structure and a forming method thereof. A first dielectric layer covering the substrate structure is formed, an interconnection structure is formed in the first dielectric layer, and the first dielectric layer exposes the top of the interconnection structure; the interconnection structure is modified, so that the interconnection structure forms fixed crystal face orientation, and the surface energy of the crystal face orientation is the lowest. The crystal face orientation of the interconnection structure in the embodiment of the invention is fixed, and the surface energy of the formed wafer orientation is the lowest, so that the crystal boundary or lattice defects of the material of the interconnection structure are reduced, the probability of carrier electron scattering in the interconnection structure is correspondingly reduced, the transmission efficiency of carrier electrons in the interconnection structure is improved, and the performance of the interconnection structure is improved. And the resistance of the interconnection structure is further reduced.

The invention relates to the technical field of chemical plating of high polymer materials, and discloses a method for chemically plating a high-strength and low-resistivity copper wire on the surface of a polyimide film. The method comprises the following steps: preparing a polyamide acid film, and carrying out graphical treatment on the surface of the polyamide acid film; immersing the substrate into a solution containing a chemical plating catalyst for activation, and enabling the catalyst to cover the graphical processing area; carrying out thermal cyclization treatment on the polyimide film to obtain a polyimide film; and the polyimide film is subjected to copper plating in a chemical plating solution through a gradient concentration control method or a multi-layer alternating method, and the polyimide film with a high-strength and low-resistivity copper wire on the surface is obtained. According to the application, the grain size distribution in the copper plating layer is innovatively controlled through a gradient concentration control strategy and a multi-layer alternating strategy, so that nanometer and micrometer grains coexist to form a nanometer-micrometer double-size structure, a stress transfer network can be constructed through the micrometer grains, electron scattering can be reduced by means of the nanometer grains, and the stress transfer efficiency is improved. Therefore, the strength is improved and the resistivity is reduced.

The invention relates to the field of manufacturing of metal-based composite materials and electric wires and cables, in particular to a high-strength and high-conductivity copper alloy energy storage cable and a preparation method. The cable sequentially comprises a conductor core, an insulating layer, a flame-retardant armor layer and a weather-proof sheath layer from inside to outside. A multifunctional composite modifier is uniformly dispersed in a conductor core copper matrix, and the modifier is of a core-shell structure and is composed of a multi-walled carbon nanotube center core, a 5-15 nm silver conductive transition shell layer and a rare earth anchoring phase. The core of the composite material is that a high-strength framework is constructed by using a carbon nano tube to provide physical strengthening support, and a silver transition shell layer and a copper matrix are closely fused in a microscopic state, so that micro pores are eliminated, and dense metallurgical coherent combination is realized; according to the invention, the alloy single wire is prepared by feeding the intermediate into the copper melt and carrying out stepped aging treatment, so that an electron transmission channel is effectively bridged, interface electron scattering is greatly reduced, and the technical bottleneck of strong conduction and mutual exclusion of traditional metal materials is successfully broken.

The invention provides a method for predicting secondary electron emission time based on Monte Carlo, and the method comprises the following steps: 1, obtaining the fluctuation height and the maximum fluctuation height; 2, determining incident electron characteristics and material types, and setting an initial moment; step 3, simulating an electron scattering and internal secondary electron generation process and calculating a scattering step length; 4, judging whether scattering is in the material or not, if yes, calculating and updating the moment to the step 3, and otherwise, executing the step 5; 5, judging whether the surface potential barrier is traversed or not, and if not, returning to the updating moment to the step 3; otherwise, updating the time to step 6; step 6, judging whether re-incidence occurs or not, if no, updating the moment, and obtaining the secondary electron emission moment; otherwise, calculating the time to the re-incidence point and updating the time, and going to the step 3; and step 7, counting all electron moments to obtain secondary electron emission time. According to the method disclosed by the invention, all durations of electrons from entering the material to generating secondary electrons and completely emitting from the surface are obtained, and the secondary electron emission time characteristic is obtained.

According to the silver-bismuth-copper alloy electrode material for the high-temperature crystal oscillator and the high-temperature-resistant coating method for the crystal oscillator, the problems that pure silver is prone to crystal grain growth and oxidation to form electrode material defects, and frequency drift is caused by electrode material defects of a traditional crystal oscillator in a high-temperature environment are solved; a multi-element alloy electrode material which takes silver as a basis and is added with bismuth, copper, indium, lanthanum and antimony and a matched preparation and coating process are provided, silver ensures excellent conductivity of an electrode, bismuth pinns a grain boundary, copper forms second-phase particles to jointly inhibit grain growth at high temperature, and the conductivity of the electrode is improved. Indium preferentially forms a compact oxide film, lanthanum purifies impurities and refines initial crystal grains, antimony optimizes wettability of a film layer to synergistically inhibit oxidation, and because crystal grain growth is inhibited, a fine and uniform microstructure of the electrode film layer can be maintained, uniform electron scattering and stable resistance are ensured, and electric field change of an excitation substrate caused by resistance fluctuation is avoided. The oxidation inhibition can prevent irregular change of electrode mass and volume and local difference of thermal expansion coefficient, and reduces frequency drift of the crystal oscillator.

The invention discloses an electrochemical energy storage device thermal runaway early intervention system based on a dual-frequency electromagnetic pulse synergistic effect, and the system comprises a detection unit which comprises a radar detector and an infrared temperature sensor; the dual-frequency transmitting unit comprises a first magnetron of which the working frequency is 24.65 GHz, a second magnetron of which the working frequency is 107.5 GHz, a waveguide synthesizer and a phased array antenna; a control unit; the power supply module comprises a super capacitor bank and a high-voltage pulse generator; the protection unit comprises a titanium alloy shielding cabin and a waveguide choking coil structure. The invention also provides a method for intervening the early thermal runaway stage of the electrochemical energy storage device by using the system and application. According to the method, molecules are directionally dissociated through 24.65 GHz pulses to generate free radical quenching agents such as OH, and a chain reaction is directly blocked; the 107.5 GHz pulse is coupled with the electron cyclotron frequency, the electron scattering cross section is increased through the effect of the Lorentz force, and the electron migration rate is remarkably reduced.

The application relates to the technical field of silver-coated copper powder, in particular to silver-coated copper powder suitable for high-frequency electronic components and a preparation method thereof. The silver-coated copper powder comprises the following steps: copper powder treatment, chemical silver plating, cleaning and drying, surface finishing, silver layer deposition and passivation and material taking, the application utilizes the skin effect, and a surface silver layer formed through PVD is extremely dense and smooth, thus providing a nearly perfect transmission channel for high-frequency current, and the resistivity of the silver layer is close to that of a bulk silver single crystal. The reduction of surface roughness also reduces electron scattering; in a target high-frequency band, the conductive loss of the silver-coated copper powder is far higher than that of a pure chemical plating product and reaches the level of pure silver powder.

The application provides a method for preparing a platinum-based high-spin Hall angle material, an alloy film and application, the method comprising: adding impurities to form an alloy film with a polycrystalline or single crystal structure by the impurities and platinum during the growth of a platinum-based metal film; wherein the impurities are one or more of a non-platinum metal, a metal carbide, a metal nitride or a metal oxide and silicon or a silicon compound; the volume percentage of the impurities is 1%-60%; the platinum in the platinum-based metal film is used to provide a spin Hall effect; and the impurities are used to enhance the electron scattering and resistivity of the platinum in the platinum-based metal film. The alloy film has the advantages of low resistivity, a large spin Hall angle, uniformity, low cost, stable structure and properties, compatibility with integrated circuits and CMOS semiconductor processes and the like. The magnetic random access memory, oscillator, logic device, raceway storage and computing device and the like developed based on the alloy film have the advantages of high energy efficiency, long service life, low impedance and the like.