39 results about "Electron scattering" patented technology

The invention discloses a rare earth aluminum alloy conductor material which comprises magnesium, silicon, boron and a rare earth element, the rare earth element comprises one of lanthanum, cerium, yttrium and erbium, and the balance is aluminum. Wherein in terms of mass fraction, the mass fraction of the magnesium is 0.2%-0.8%, the mass fraction of the silicon is 0.1%-0.5%, the mass fraction of the boron is 0.01%-0.15%, the mass fraction of the rare earth element is 0.1%-0.15%, and the balance is aluminum. Trace elements are introduced into the aluminum alloy to serve as microalloying elements. The atomic radius of the microalloying elements is generally much larger than that of aluminum, the solid solubility of the microalloying elements in an aluminum matrix is very low, lattice distortion and electron scattering caused by a large number of solute atoms are avoided, and the negative influence on conductivity is reduced; and the electron orbits of the compounds are complex, so that stable intermetallic compounds or second-phase particles can be easily formed.

The invention discloses an electron beam spot intensity distribution characterization method based on a suspended nano film, and belongs to the technical field of micro-nano machining. In order to solve the problems of radiation damage, poor repeatability, introduction of additional scattering interference and the like in the application of an electron beam lithography machine in the prior art, a suspended nano film structure is mainly manufactured by adopting a standard microelectronic process based on a silicon wafer, and the intensity distribution of electron beam spots is represented through exposure and development. According to the method, on the basis of being compatible with the original electron beam lithography machine process environment, accurate characterization of the electron beam spots is achieved, back exposure is not needed, the process steps are simplified, and interference of electron scattering and edge sputtering is effectively avoided.

The insertion of an ultra-thin sublayer of intentionally oxygen-doped aluminum nitride can drastically improve the adhesion between an intentionally stoichiometrically deposited aluminum nitride and a silver functional layer of a low-emissivity solar-control structure. A similar sublayer, optionally disposed above the functional layer, can improve the adhesion between the silver and top layers of the structure. Additional benefits of inserting the aluminum-oxy-nitride include an improved smoothness of the interface, reduced electron scattering, and better performance of the structure in both visible and infrared spectral regions.

The application relates to a method for preparing textured copper by graphene directional control, and relates to the field of metal matrix composites, and comprises the following steps: 1) substrate preparation; 2) graphene induced growth; and 3) texture growth. The method for preparing textured copper by graphene directional control successfully induces copper grains to grow along the (111) plane preferential orientation by using the high matching property of graphene and copper lattices, and prepares dense (111) strong texture copper material. By greatly reducing the number of grain boundaries and reducing electron scattering, the material effectively breaks through the conductivity limit of polycrystalline copper, and the conductivity can reach more than 103% IACS, close to the level of single crystal copper, solves the problem that the conductivity of traditional polycrystalline copper is limited, the process flow is simple, the controllability is strong, and the method is easy to realize large-scale production. The obtained textured copper material not only has excellent electrical properties, but also has good mechanical strength, and can meet the strict requirements of high-end fields such as power transmission, electronic packaging and aerospace for high-conductivity and high-performance copper materials.

The present invention provides a gradient columnar crystal electromagnetic wire conductor and a preparation method thereof. For the gradient columnar crystal electromagnetic wire conductor of the present invention, the surface layer is a coarse crystal structure and the core is a fine crystal structure along the cross-sectional direction of the conductor, and the columnar crystal structure is along the axial direction of the conductor. The present invention first adopts a drawing and continuous annealing process, controls the drawing deformation amount, annealing temperature and heating time to make the recrystallization degrees of the surface layer and the core different, and obtains a gradient crystal electromagnetic wire conductor; then adopts a directional heat treatment process, controls the drawing rate and temperature gradient to make the grain boundaries migrate directionally, and finally obtains a gradient columnar crystal electromagnetic wire conductor. The present invention prepares a gradient columnar crystal electromagnetic wire conductor for the first time. The special gradient columnar crystal structure can reduce electron scattering and relieve the skin effect. Among them, the conductivity of the copper conductor is increased to 103% IACS and the elongation is increased to 42%. The preparation method can produce a high-power and low-loss electromagnetic wire conductor and be applied to the process production line.

A multi-beam charged particle beam system and a method for operating the multi-beam charged particle beam system with higher precision are provided. This improvement relates to a multi-beam forming unit that has lower sensitivity to secondary electrons, scattered charged particles, and x-ray radiation. Thereby, a plurality of primary charged particle beamlets can be generated with higher precision and a longer lifespan of the multi-beam forming unit. The present system and method are applicable to improved inspection of samples, such as wafer or mask inspection.

The invention discloses a preparation method of an aluminum alloy conductive part. The aluminum alloy conductive part with high strength and high conductivity is prepared through continuous extrusion, online quenching, subzero treatment and aging treatment. The aluminum extrusion part is subjected to aging treatment after being subjected to subzero treatment, segregation of solute atoms and optimized distribution of precipitated phases after subzero treatment can reduce electron scattering centers, an electron conduction path is optimized, and the electric conductivity is improved; and more, finer and uniformly distributed aging phases can effectively hinder dislocation movement, so that the strength of the aluminum alloy is improved. During aging treatment, solute atoms in the supersaturated solid solution are separated out in the form of a precipitation phase, the concentration of the solute atoms in a matrix is reduced, the lattice distortion degree is reduced, and the electron scattering probability is reduced, so that the electric conductivity is improved; the formation of the precipitated phase makes the structure more refined and uniform, so that the strength and hardness of the aluminum alloy material are improved, and the prepared aluminum alloy conductive part has high strength and high conductivity.

The invention discloses a preparation method of an in-situ Ag NWs fiber reinforced Cu-Ag alloy wire. The method comprises the following steps: 1, synthesizing Ag NWs in situ based on a liquid phase polyol method; 2, preparing a pre-dispersed Ag NWs fiber solution; 3, Cu powder is poured into the pre-dispersed Ag NWs fiber solution to be stirred and dried; 4, performing heat treatment to obtain Cu / Ag NWs composite powder; 5, performing spark plasma sintering to obtain a Cu / Ag NWs composite bar; and sixthly, cold drawing machining is conducted after tubing. Through in-situ synthesis of Ag NWs, mixing, sintering and drawing deformation processes, a microstructure of a large-length-diameter-ratio Ag NWs fiber reinforced submicron copper matrix is constructed from the angles of low Ag content, avoidance of grain growth and reduction of electron scattering, and a Cu-Ag alloy wire with good strength and conductivity matching is obtained under the low Ag content; the magnet is suitable for the fields of electronic communication, power transmission, high-field pulse magnets and the like.

The invention relates to the technical field of copper alloy plates and strips, in particular to a high-resistivity low-resistance-temperature-coefficient copper-manganese alloy plate and strip preparation process which comprises the following steps: S1, burdening; s2, vacuum melting and casting; s3, forging is conducted; s4, hot rolling; s5, rough rolling; s6, first intermediate and finish rolling; s7, secondary medium and finish rolling; s8, finish rolling; through multiple times of rolling, high dislocation density and lattice distortion are introduced into the material, and electrons are strongly scattered; due to rolling deformation, grains in the material are lengthened in the machining direction, the number of grain boundaries is increased, electron scattering is increased, the sensitivity of the scattering to temperature changes is low, and the resistance value can be more stable at different temperatures; therefore, the copper-manganese alloy plate strip has high resistivity and a full-negative resistance temperature coefficient.

This invention relates to the field of copper alloy materials technology, and more particularly to a Cu-Fe-Re alloy based on controlled deformation and its preparation method. The alloy composition, by weight percentage, includes: 10%~20% iron, 0.2%~1.0% rare earth elements, and the balance being copper and unavoidable impurities; the rare earth elements are selected from one or more of cerium, lanthanum, and yttrium. Based on rare earth refinement, this invention, through precise control of the deformation amount, transforms the precipitated iron phase from coarse dendrites to dispersed droplets, which, after further deformation, evolve into a fibrous structure. The gaps between iron phases are significantly reduced, and the distribution becomes more compact. The optimized selection of the deformation amount achieves the best match between dislocation strengthening and second-phase strengthening. Simultaneously, in terms of electrical conductivity, by controlling the dislocation density and second-phase morphology, the electron scattering effect is minimized, achieving a synergistic improvement in strength and conductivity. The introduction of rare earth elements can purify grain boundaries, refine the as-cast structure, and improve the distribution of the second phase.

This invention relates to the field of copper alloy materials technology, specifically to a high-performance copper alloy wire and its preparation process. A high-performance copper alloy wire includes a base copper alloy wire and a corrosion-resistant protective layer. The base copper alloy wire, by mass percentage, comprises: 0.4-0.6% Cr, 0.05-0.2% Zr, 0.05-0.06% Hf, 0.01-0.03% Ce, 0.4-0.5% rare earth modified carbon nanotubes, with the balance being Cu. This invention improves the dispersibility of carbon nanotubes by first activating them with carboxylation and then modifying them with rare earth citric acid coupling agents. The uniformly dispersed carbon nanotubes can form a continuous conductive network in the copper matrix. At the same time, the lanthanum and cerium introduced during modification can purify the grain boundaries and reduce electron scattering at the grain boundaries, thereby effectively improving the conductivity of the copper alloy wire. In addition, the uniformly dispersed rare earth modified carbon nanotubes can effectively hinder dislocation movement and refine the matrix grains, thereby effectively improving the tensile strength of the copper alloy wire.

The invention provides a preparation method of an iron-chromium-aluminum alloy and an electric heating element. The preparation method comprises the following steps: preparing an alloy base material from an iron-chromium-aluminum alloy raw material; carrying out surface pretreatment on the alloy base material; injecting a non-metal ion source into the alloy base material; carrying out rapid thermal annealing treatment on the alloy base material after ion implantation to prepare the iron-chromium-aluminum alloy; the electric heating element is formed by processing the iron-chromium-aluminum alloy, and the iron-chromium-aluminum alloy is manufactured by adopting the preparation method. According to the preparation method of the iron-chromium-aluminum alloy, the non-metal ion source is doped into the iron-chromium-aluminum alloy base material through the ion implantation process, vacancy clusters are introduced below the surface layer of the alloy base material, and the nano defects are stabilized and homogenized in combination with the rapid heat treatment technology; the electron scattering mechanism of the iron-chromium-aluminum alloy is effectively regulated and controlled, the resistivity is remarkably improved, and the TCR is highly stable.

The application discloses an Al-Mg-Si alloy with good heat resistance and size stability, and the alloy is composed of the following components in percentage by mass: Mg 0.6-1.2%, Mn 0.3-0.5%, Si 0.5-0.9%, Cu 0.1-0.15%, Cr 0.15-0.2%, Zn 0.1-0.2%, Ti 0.10-0.15%, Sc 0.05-0.25%, Hf 0.05-0.25%, Bi 0.6-1.5%, and the balance of Al and inevitable impurity elements. The Al-Mg-Si alloy of some examples of the application can avoid the increase of electron scattering caused by the solid solution of Si and Fe elements in the matrix by adjusting the content of Mg and Si elements, and is beneficial to the improvement of the heat conduction performance of the alloy; the alloy contains Sc and Hf rare earth elements, so that the heat conduction performance and heat resistance of the alloy are improved; a small amount of Bi element is further added, so that the expansion of the alloy at a higher temperature is reduced, and the size stability of the alloy is improved; and the alloy is subjected to a stabilization treatment, so that the microstructure of the alloy is effectively stabilized, and the macroscopic residual stress of the hot extruded profile is obviously reduced.

The invention relates to the technical field of VR, in particular to an electron beam generation method and device based on VR and a medium, and the method comprises the steps: generating a corresponding original electron beam 3D model in a VR environment based on electron beam parameters; determining a position mapping relation between a predefined VR environment and the original 2D image data; performing image fuzzy processing and image brightness processing according to the electron beam parameters to obtain updated 2D image data; and mapping the updated 2D image data as a texture to the surface of the original electron beam 3D model, and generating a standard electron beam 3D model in a VR environment. An electron scattering effect is simulated through image blurring processing, an edge blurring effect conforming to a physical rule is generated, and intensity distribution is mapped through image brightness processing, so that an electron beam in a VR environment presents a real optical characteristic that the center is bright and the edge is gradually weak, and the fidelity visualization of the physical attribute of the electron beam is realized.

A method for improving the conductivity of a graphene-copper composite material by epitaxially depositing a nano interface layer comprises the following steps: depositing graphene on the surface of a copper foil by adopting a chemical vapor deposition (CVD) technology to form a graphene / copper composite foil; on the basis, a copper layer with the nano-scale thickness is deposited through magnetron sputtering, thermocompression bonding is carried out, and a nano-copper layer-graphene / copper composite element is prepared; and stacking a plurality of layers of nano-copper layer-graphene / copper composite elements layer by layer, and carrying out hot pressed sintering to obtain the graphene-copper-based composite material with remarkably optimized conductivity. According to the method, atomic-level stable combination is achieved, the contact performance of the composite interface is enhanced, the problems of electron scattering and the like caused by poor quality of the copper-carbon composite interface are effectively solved, further breakthrough of the conductivity is achieved, and production and preparation are easy.

The invention discloses a high-conductivity aluminum alloy conductor and a preparation method thereof. The high-conductivity aluminum alloy conductor comprises the following elements in percentage by weight: 0.01%-0.05% of B, 0.1%-0.3% of Si, 0.1%-0.25% of Fe, 0.01%-0.05% of Zn, 0.001%-0.005% of Tb, 0.005%-0.02% of Ce, 0.001%-0.005% of V, 0.001%-0.005% of Ti, 0.01%-0.05% of Zr, 0.001%-0.005% of Er and the balance of Al. The aluminum alloy conductor has the beneficial effects that a compound formed by B and Si is dispersed and distributed in an aluminum alloy matrix, grains are effectively refined, and the influence of a grain boundary on electron scattering is reduced, so that the electric conductivity of the aluminum alloy conductor is remarkably improved, the electric energy loss of a power transmission line can be effectively reduced, and the power transmission efficiency is improved; rare earth elements such as Tb, Ce and Er interact with elements such as Fe and Zn, so that the crystal structure of the alloy is improved, the grain boundary binding force is enhanced, the aluminum alloy conductor has excellent tensile strength, ductility and fatigue life and can better adapt to a complex power transmission environment, and the reliability and stability of a power transmission line are improved.

The application relates to the field of metal matrix composites and wire and cable manufacturing, in particular to a high-strength and high-conductivity copper alloy energy storage cable and a preparation method; the cable comprises, from inside to outside, a conductor core, an insulation layer, a flame-retardant armored layer and a weather-resistant sheath layer; the conductor core is uniformly dispersed with a multifunctional composite modifier in a copper matrix, the modifier has a core-shell structure and is composed of a multi-walled carbon nanotube center core, a 5-15nm silver conductive transition shell layer and a rare earth anchoring phase; the core is to construct a high-strength skeleton by using the carbon nanotube to provide physical strengthening support, and the silver transition shell layer is used to tightly fuse with the copper matrix in a microstate, so that micro-pores are eliminated to realize dense metallurgical coherent bonding; the alloy single wire is prepared by feeding the intermediate into the copper melt and assisting with ladder aging treatment, the electronic transmission channel is effectively bridged, the interface electron scattering is greatly reduced, and the technical bottleneck of the traditional metal material strong-conductivity mutual repulsion is successfully broken.

A multi-beam charged particle beam system includes a multi-beam forming unit with a lower sensitivity to secondary electrons, scattered charge particles and x-ray radiation. Thereby, a plurality of primary charged particle beamlets can be generated with higher precision and with a longer lifetime of a multi-beam forming unit. The system and method are applicable for an inspection of samples, for example for wafer or mask inspection.

The invention relates to a preparation method of a high-conductivity copper-nickel alloy-graphite interlayer composite material, which comprises the following steps: uniformly mixing dried graphite powder with a mixture of copper chloride and nickel chloride as an intercalator, carrying out vacuum melting sealing treatment, heating, and carrying out composite intercalation reaction to prepare a composite chloride-graphite intercalation compound; and annealing reduction is further carried out in a hydrogen-argon mixed gas atmosphere to obtain copper / nickel-graphite composite powder, and then the copper-nickel alloy-graphite interlayer composite material is obtained through hot pressed sintering. According to the preparation method, a composite chloride-graphite intercalation compound is generated through a composite intercalation reaction by utilizing a mixing method, and the copper-nickel alloy-graphite interlayer composite material with a straight and uniform interface is prepared through annealing reduction and hot pressed sintering, so that the problems of electron scattering and the like caused by relatively poor interface quality in a graphene-copper-based composite material can be effectively solved; the conductivity of the composite material is obviously improved, and the composite material has the characteristic of ultrahigh conductivity and is easy to produce and prepare.

This application relates to real-time detection and correction of system response. Embodiments of the invention can include methods, systems, and apparatuses for correcting a response function of an electron beam tool. The correction can include modulating an electron beam parameter having a frequency; emitting an electron beam toward a sample based on the electron beam parameter, thereby scattering electrons, wherein the electron beam is described by a source wave function having a source phase and a landing angle; detecting a portion of the scattered electrons at an electron detector, thereby generating electron data including an electron wave function having an electron phase and an electron landing angle; determining, using a processor, a phase delay between the source phase and the electron phase, thereby generating a latency; and using the processor, using the latency and a difference between the source wave function and the electron wave function to correct the response function of the electron beam tool.

This invention relates to the field of VR technology, specifically to a VR-based electron beam generation method, device, and medium. The method includes: generating a corresponding original electron beam 3D model in a VR environment based on electron beam parameters; determining the positional mapping relationship between the predefined VR environment and the original 2D image data; performing image blurring and brightness processing according to the electron beam parameters to obtain updated 2D image data; and mapping the updated 2D image data as a texture onto the surface of the original electron beam 3D model to generate a standard electron beam 3D model in the VR environment. By simulating electron scattering effects through image blurring, an edge blurring effect conforming to physical laws is generated. Furthermore, by mapping the intensity distribution through image brightness processing, the electron beam in the VR environment exhibits realistic optical characteristics of a bright center and gradually weakening edges, thereby achieving faithful visualization of the physical properties of the electron beam.

The invention provides a copper alloy material and a preparation method thereof, and the copper alloy material comprises the following components in percentage by weight: 0.2 to 0.7 percent of Cr, 0.2 to 0.4 percent of Ti, 0.05 to 0.4 percent of Zn, 0.01 to 0.05 percent of Si, 0.005 to 0.05 percent of Re and the balance of Cu and inevitable impurity elements. Wherein Re comprises Dy and Y. According to the invention, the Cr precipitation structure improves the alloy strength, the Ti can refine the alloy lattice and enhance the thermal stability of the matrix, and the Zn and Si can reduce the electron scattering source and inhibit the reduction of the conductivity; the mixed rare earth Re can obviously refine the grain structure of the copper alloy, stabilize the grain boundary, reduce the grain boundary resistance, and meanwhile achieve the purposes of strengthening the matrix and maintaining the high-conductivity characteristic. According to the copper alloy obtained through the metal and the proportion, the strength and the conductivity can be synchronously improved on the premise that electron scattering is not remarkably increased.

The application discloses a kind of high-conductivity aluminum alloy wire and preparation method thereof, including following weight percentage of element: B is 0.01-0.05%, Si is 0.1-0.3%, Fe is 0.1-0.25%, Zn is 0.01-0.05%, Tb is 0.001-0.005%, Ce is 0.005-0.02%, V is 0.001-0.005%, Ti is 0.001-0.005%, Zr is 0.01-0.05%, Er is 0.001-0.005%, the rest is Al;The beneficial effect of the application is: B and the compound formed by Si are dispersed in aluminum alloy matrix, effectively refine grain, reduce the influence of electron scattering on grain boundary, so as to significantly improve the conductivity of aluminum alloy wire, can effectively reduce the power loss of power transmission line, improve transmission efficiency;Tb, Ce, Er and other rare earth elements interact with Fe, Zn and other elements, improve the crystal structure of alloy, strengthen the grain boundary binding force, so that aluminum alloy wire has excellent tensile strength, elongation and fatigue life, can better adapt to complex power transmission environment, improve the reliability and stability of power transmission line.

The invention discloses a preparation device of a signal monitoring line for vehicle-mounted wireless charging. The preparation device comprises a rack, and a tin scraping assembly, a zero-distance sealing butt joint bridge and a wire annealing furnace which are sequentially arranged along a wire conveying path on the rack, an outlet of the tin scraping assembly is connected with an inlet of the wire annealing furnace in a sealed mode through a zero-distance sealing butt joint bridge, and the tin scraping assembly comprises a tin scraping box, two scraping plates arranged in the tin scraping box and a sealing cover arranged above the tin scraping box. The wire annealing furnace is a closed infrared heating tunnel furnace, a furnace body of the wire annealing furnace is made of a high-temperature-resistant alloy material, and an infrared heating array and a temperature sensor are arranged in the wire annealing furnace; a mounting plate is fixedly connected to the top of the rack, double optimization of the surface state and the internal structure of the wire rod is achieved through cooperative application of inert gas protection transmission and precise annealing steps, high-resistance pollutants are prevented from being generated through the pure surface, and electron scattering is reduced through a uniform and refined internal grain structure.

The invention relates to the technical field of semiconductors, in particular to a silicon carbide MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device for improving trench gate vertex angle gate oxide reliability and a preparation method. The key structure of the invention comprises three parts: an N-region outside a trench gate oxide layer comprises a bottom and a side wall, and the gate oxide layer is separated, so that the effect of an interface state on channel electron scattering is reduced, and the channel mobility is improved; according to two structures at the bottom of the trench, namely a layer of PP region and NN regions at two sides of a vertex angle, a PN junction is formed below the gate trench under reverse bias of the device, and the maximum field intensity in a gate oxide layer is transferred to the PN junction, so that the possibility that the gate oxide layer is broken down by an electric field is effectively eliminated, the reliability of the device is improved, and the reliability of the device is improved. And meanwhile, the highly doped NN region is used as a conductive region, so that the on resistance of a current path can be reduced.

The invention provides high-conductivity conductive silver paste and a preparation method thereof, the conductive silver paste comprises silver powder, glass powder, an organic carrier and a conductive enhancer, the silver powder comprises spherical silver powder and flake silver powder, the average particle size of the flake silver powder is 5-10 [mu] m, the average thickness is 80-100 nm, and the surface roughness is RMSlt; the wavelength is 10 nm. The conductive silver paste is prepared by selecting the flaky silver powder which is concentrated in particle size, thinner in thickness and smooth in surface, the flaky silver powder can be matched with the spherical silver powder to be tightly stacked in the paste to form'face-face 'and'face-point' conductive networks, the electron transmission path is shorter, the contact resistance is reduced, and the conductivity of the silver paste is effectively improved; the ultra-thin structure can achieve a higher volume filling rate, the use amount of silver powder can be reduced by at least 10% under the same conductivity, and the cost is effectively reduced; meanwhile, the smooth surface reduces electron scattering, the contact resistance is reduced, agglomeration caused by mechanical interlocking is effectively reduced, and uniform printing of the conductive silver paste is guaranteed.

This invention relates to the field of aluminum alloy production technology, specifically disclosing a method for producing high-purity, high-conductivity aluminum strip with high efficiency and low carbon emissions. The method utilizes continuous casting and rolling to produce 1085 alloy high-purity aluminum strip. While ensuring efficient, low-carbon, and low-cost production through a short process, the cold rolling process employs a three-stage fully recrystallized annealing process: intermediate annealing + cold rolling + intermediate annealing + cold rolling + finished product annealing. This produces 0-state aluminum strip with a soft texture, eliminating the formation of large grains. Through three recrystallization processes, work hardening is eliminated, solid solution impurities precipitate, the number and severity of lattice distortion are reduced, dislocation defect density is low, and free electron scattering is significantly weakened, resulting in improved conductivity. The tensile strength is only about 53 MPa, making it extremely easy to process and use. The finished product conductivity is ≥37.5 mS / m, an improvement of about 3% compared to traditional processes, making it suitable for high-conductivity applications such as power equipment.

The invention discloses a semiconductor structure and a forming method thereof. A first dielectric layer covering the substrate structure is formed, an interconnection structure is formed in the first dielectric layer, and the first dielectric layer exposes the top of the interconnection structure; the interconnection structure is modified, so that the interconnection structure forms fixed crystal face orientation, and the surface energy of the crystal face orientation is the lowest. The crystal face orientation of the interconnection structure in the embodiment of the invention is fixed, and the surface energy of the formed wafer orientation is the lowest, so that the crystal boundary or lattice defects of the material of the interconnection structure are reduced, the probability of carrier electron scattering in the interconnection structure is correspondingly reduced, the transmission efficiency of carrier electrons in the interconnection structure is improved, and the performance of the interconnection structure is improved. And the resistance of the interconnection structure is further reduced.

The present invention provides a space electron detector comprising a housing, a collimator, and a detector. The collimator is a circular ring structure with two or three layers of collimators coaxially arranged within the housing. Electrons pass through the collimator before reaching the detector. The inner diameter of the collimator decreases as electrons approach the detector. Furthermore, the inner diameter of the collimator's upper surface is larger than that of its lower surface. The present invention utilizes a specially designed collimator structure and dimensions to meet the requirements of a particle spectrometer with a large aperture angle and high geometry factor, thereby improving electron scattering within the detector and enhancing the instrument's measurement accuracy.

The invention relates to the technical field of chemical plating of high polymer materials, and discloses a method for chemically plating a high-strength and low-resistivity copper wire on the surface of a polyimide film. The method comprises the following steps: preparing a polyamide acid film, and carrying out graphical treatment on the surface of the polyamide acid film; immersing the substrate into a solution containing a chemical plating catalyst for activation, and enabling the catalyst to cover the graphical processing area; carrying out thermal cyclization treatment on the polyimide film to obtain a polyimide film; and the polyimide film is subjected to copper plating in a chemical plating solution through a gradient concentration control method or a multi-layer alternating method, and the polyimide film with a high-strength and low-resistivity copper wire on the surface is obtained. According to the application, the grain size distribution in the copper plating layer is innovatively controlled through a gradient concentration control strategy and a multi-layer alternating strategy, so that nanometer and micrometer grains coexist to form a nanometer-micrometer double-size structure, a stress transfer network can be constructed through the micrometer grains, electron scattering can be reduced by means of the nanometer grains, and the stress transfer efficiency is improved. Therefore, the strength is improved and the resistivity is reduced.