10 results about "Beam scattering" patented technology

According to embodiments of this disclosure, a method, apparatus, and medium for pattern processing are provided. In the method, parameter information related to a lithography machine and a wafer in a lithography process is acquired. The lithography machine is used to form a wafer pattern on the wafer based on a target pattern. Based on the parameter information, a target state representation corresponding to the target pattern is determined from a plurality of candidate state representations indicating the electron beam scattering state. Based on the target state representation, a correction result for the target pattern is determined. In this manner, the state representation of the electron beam scattering state corresponding to the target pattern can be determined based on the parameter information of the lithography machine used and the parameter information of the wafer used for lithography, thereby simulating the lithography process more accurately. This ensures that the state representation used for lithography process simulation can more accurately describe the scattering state of the electron beam used by the lithography machine, improving the reliability of the simulation process and thus more accurately determining the correction result for the target pattern.

The invention discloses a headlamp lens with a high beam and low beam function, and relates to the technical field of automobile accessories, the headlamp lens comprises a base, a first high beam set is mounted on the front side of the outer wall of the base, a low beam set is mounted on the left side of the outer wall of the first high beam set, and a second high beam set is mounted on the left side of the outer wall of the low beam set; first sliding blocks are installed at the connecting positions of the first high beam set, the low beam set and the second high beam set and the base, first sliding rails are installed at the connecting positions of the first sliding blocks and the base, a visual sensor is installed on the upper side of the outer wall of the base, and locking devices are installed at the connecting positions of the first high beam set, the low beam set and the second high beam set and the first sliding blocks. By installing the first sliding rail, the first sliding block, the locking device, the rotating device and other structures, the function of adjusting the height and angle of high and low beams is achieved, the problems of dazzling due to vehicle height difference, dazzling due to light beam scattering superposition and manual adjustment lag are solved, and dazzling caused by direct incidence of the high and low beams to a driver and distraction caused by manual adjustment can be avoided.

The application discloses an in-situ transmission electron microscope sample rod integrated with a scanning tunneling microscope and a detection method, and belongs to the technical field of electron microscopes. The sample rod comprises a sample rod body, an axial STM probe assembly integrated with the sample rod head, a front-end rotatable sample support and a linear-rotation conversion driving mechanism. The linear-rotation conversion driving mechanism converts axial linear motion into angular displacement, and drives the rotatable sample support to be in-situ flipped by 90 DEG between a horizontal TEM mode and a vertical STM mode. In the STM mode, the sample surface is parallel to the electron beam and opposite to the STM probe tip, and at the same time, an automatic electrical contact assembly is closed to realize reliable grounding of the sample. The application effectively solves the problems of geometric visual angle conflict, electron beam scattering interference and unstable grounding existing in the traditional combined technology, and realizes lossless, high signal-to-noise ratio in-situ switching of transmission imaging and tunneling current analysis in a vacuum environment.

A scanning imaging system based on vortex beam scattering medium belongs to the field of optical imaging. It is composed of vortex beam emission system, vortex beam receiving system, digital signal processing, synchronization system and imaging system. The vortex beam emission system includes vortex beam generation system, two-dimensional beam scanning system, emission optical system and modulation. The vortex beam receiving system includes receiving optical system, spatial light filtering, single photon detection, photoelectric detection, etc. It is also applicable to target imaging in non-scattering medium.

Embodiments of a laser beam dump assembly are disclosed. In one embodiment, the laser beam dump assembly includes a beam dump housing having a housing body and a channel formed therein, wherein the channel is sized to allow an incident laser beam to propagate therethrough to an interior space formed in the housing body. The laser beam dump assembly further includes a beam scattering member having a curved scattering surface configured to scatter or reflect a first portion of the incident laser beam and allow a second portion of the incident laser beam to be absorbed by the scattering member as thermal energy. A heat sink is coupled to the beam dump housing and in thermal communication with the beam scattering member, wherein the heat sink is configured to absorb and dissipate the thermal energy from the beam scattering member.

To provide a vertical cavity surface emitting laser having a plurality of reflecting mirrors.SOLUTION: The vertical cavity surface emitting laser Z1 according to the present invention is provided with a plurality of reflectors. To be specific, the vertical cavity surface emitting laser Z1 of the present invention has a first resonance cavity C1 and a second resonance cavity C2, the second resonance cavity C2 is far away from the current limiting layer 13, and the light beam is mainly emitted after resonating in the second resonance cavity C2. With this structure, the influence of beam scattering caused by the current limiting layer 13 is solved, and the light emitting effect is improved.SELECTED DRAWING: Figure 1

The invention relates to the field of nuclear fusion devices, and discloses an escape electron relieving device and relieving method of a nuclear fusion device and the nuclear fusion device.The relieving device comprises an escape electron diagnosis unit used for detecting existence of escape electrons in real time and conducting high-frequency monitoring to obtain a real-time kinetic energy distribution spectrum of escape electron beams; the self-adaptive control unit is used for calculating the resonance frequency capable of triggering strong scattering of the electron beam in the current energy state in real time according to the received real-time kinetic energy distribution spectrum of the escape electron beam in combination with the background magnetic field and density of the plasma; and the radio frequency wave injection unit is in electric connection or communication connection with the self-adaptive control unit, and the radio frequency wave injection unit can dynamically select one of radio frequency waves of a plurality of frequency bands according to the resonant frequency calculated by the self-adaptive control unit and inject the radio frequency waves into the plasma. According to the invention, the energy of the escape electrons can be tracked in real time, and the emission frequency band is adaptively switched to realize rapid and nonlinear scattering dissipation of the escape electrons, so that the dissipation efficiency is improved.

The invention belongs to the technical field of ultraviolet LEDs, and particularly relates to an electron beam pumping ultraviolet LED device which comprises a bottom plate, a light collecting cover, pumping equipment, an adjusting assembly and a feeding assembly, the pumping equipment is arranged in the light collecting cover, and the pumping equipment comprises an electron gun, a vacuum chamber, a high-voltage electric field and a multi-quantum well epitaxial wafer. The electron gun is arranged at one end in the vacuum chamber, the multi-quantum well epitaxial wafer is arranged at the other end in the vacuum chamber, the multi-quantum well epitaxial wafer is arranged on an electron beam emission path of the electron gun, and the high-voltage electric field is applied to the electron gun and the multi-quantum well epitaxial wafer to form an accelerating electric field, so that electron beam scattering loss is avoided; it is ensured that more than 90% of electron kinetic energy is directly transmitted to the quantum well structure, the carrier excitation efficiency is remarkably improved, and a foundation is laid for high-power ultraviolet light emission.

The system is used to adjust the angle of pumping light beam in situ for atomic spin inertial measurement device. The system is based on the fact that the pumping light will polarize the atoms, and the different performance of pumping light beam angle will bring different polarization rate. The system is used to adjust the angle of pumping light beam by using the signal of atomic polarization rate. The system is based on the fact that the atoms feel the change of light field, and it can meet the design requirements and be easy to implement. The system can eliminate the installation error and reduce the light scattering error caused by alkali metal cell, and improve the atomic polarization rate. The system is suitable for atomic spin inertial measurement device and has a very broad application prospect.