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104 results about "Electron absorption" patented technology

Optical transmitter and optical transmission system using electro absorption modulator

In the application of the optical transmitter to any system for the compensation of passing degradation, the invention provides the optical transmitter which maintains constant modulator output and the highly reliable optical transmission by tuning, the alpha parameter for given systems.As the optical element back-face output power detected by PD6 depends on the optical element driving current amount, the electronic absorption amount of the EA optical modulator monitored by the electronic absorption monitor depends on the optical output of the optical element 5 and the EA optical modulator driving point of the driving part 8. It is possible to detect a change in the driving point in the EA optical modulator by taking a difference between the amount monitored by the PD 6 and the amount monitored by the electronic absorption monitor. Consequently by applying to the driving current source 10 the current corresponding to the change of the EA optical modulator driving point, it is possible to automatically compensate the modulator output 7 when the driving point of the EA optical modulator changes due to the change of the alpha parameter and the passing degradation.
Owner:LUMENTUM JAPAN INC

High electron mobility transistor and method of manufacturing the same

A high electron mobility transistor comprises a GaN-based electron accumulation layer formed on a substrate, an electron supply layer formed on the electron accumulation layer, a source electrode and a drain electrode formed on the electron supply layer and spaced from each other, a gate electrode formed on the electron supply layer between the source and drain electrodes, and a hole absorption electrode formed on the electron accumulation layer so as to be substantially spaced from the electron supply layer. Since the hole absorption electrode is formed on the electron absorption layer in order to prevent holes generated by impact ionization from being accumulated on the electron accumulation layer, a kink phenomenon is prevented. Good drain-current / voltage characteristics are therefore obtained. A high power / high electron mobility transistor is provided with a high power-added efficiency and good linearity.
Owner:KK TOSHIBA

Measuring equipment of electron accelerator output beam parameter

The invention provides measuring equipment of an electron accelerator output beam parameter. The measuring equipment comprises: an electron absorption board (8) and a plurality of electron absorption rods (7), wherein the each electron absorption rod is insulated with other components. The electron absorption rods possess a same rectangular section which is parallel to the electron absorption board. A length direction is parallel to the width direction of an accelerator scanning output window (11). Side surfaces with the same width of the electron absorption rods are vertical to an electron ray direction which is located in a position of the electron absorption rods. The electron absorption board and each electron absorption rod are connected to a current measurement device through leads respectively. Compared to the prior art, by using the measuring equipment of the invention, the electron beam energy measurement is integrated with the scanning uniformity measurement. Therefore, amounts of the accelerator output beam, a spectral distribution situation, the scanning uniformity can be simultaneously determined. The equipment and the apparatus needed by electron beam output parameter measurement can be simplified. In the prior art, the different apparatuses are needed by the electron beam energy measurement and the electron beam scanning uniformity measurement. By using the measuring equipment of the invention, the above problem can be solved.
Owner:广东雷大科技有限公司

Collecting electrode used for traveling wave tube and manufacture method thereof

The invention discloses a collecting electrode used for a traveling wave tube and a manufacture method thereof. The collecting electrode used for the traveling wave tube comprises an oxygen-free copper inner core (1), wherein a graphite loading head (2) in a conical structure is nested inside one end of the oxygen-free copper inner core (1) near an collecting electrode opening, the contact part of the oxygen-free copper inner core (1) and the graphite loading head (2) is filled with welding flux (3), in addition, the oxygen-free copper inner core (1) and the graphite loading head (2) are connected in a brazing way, and a ring (4) which is made of ultraperm and used for preventing the pull cracks of the graphite loading head (2) caused by heat expansion of the oxygen-free copper inner core (1) is sheathed on the outer ring of one end of the oxygen-free copper inner core (1) provided with the graphite loading head (2). The oxygen-free copper inner core and the graphite loading head of the collecting electrode used for the traveling wave tube with the structure are connected in the brazing way, so good heat conductive performance of the collecting electrode is ensured, in addition, the front end of the graphite loading head is processed into a conical shape, and the invention is more favorable for the electron absorption.
Owner:HUADONG PHOTOELECTRIC TECHN INST OF ANHUI PROVINCE

Double-electrode perovskite solar battery and preparation method thereof

The invention discloses a double-electrode perovskite solar battery and a preparation method thereof. The battery includes a transparent conducting substrate, a semiconductor electron absorption layer, a perovskite thin film, (a hole transfer layer) and a double-layer carbon electrode superposed in sequence. As for the double-layer carbon electrode, the first layer electrode is a structural layerhaving charge selective absorption and longitudinal transmission functions and capable of increasing the contact area between perovskite or the hole transfer layer and the carbon electrode, so that alarge size of a micron order non-contact area is avoided and charge transmission distance is reduced, and holes can be extracted timely and recombination of electrons and the holes is reduced; the second layer electrode is a structural layer having a good transverse charge transmission function and facilitating timely converged exporting of holes in the electrode, so that the battery efficiency isimproved. According to the invention, good contact of the carbon electrode in the perovskite solar battery and perovskite and the electrical conductivity of the carbon electrode are both taken into account, so that advantages of simple preparation, good economical performance and practicability and batch production convenience are achieved.
Owner:咸阳瞪羚谷新材料科技有限公司

Electron bombardment type evaporation source system

The invention discloses an electron bombardment type evaporation source system which comprises a crucible mechanism, an electron beam generation mechanism, a scattered electron absorption pole and an ion collector. The crucible mechanism is provided with a plurality of crucibles, the scattered electron absorption pole is arranged above the crucibles, an outlet hole corresponding to the crucibles is arranged at the upper end of the electron beam generation mechanism, and the ion collector is positioned above the electron beam generation mechanism. Electron beams generated by the electron beam generation mechanism deflect by 270 degrees under the action of an electric field and a deflecting magnetic field to be incident into the crucibles so as to form an e-shaped track, and interference of scattered electrons can be effectively prevented. The scattered electron absorption pole is used for absorbing stimulated harmful scattered electrons, and the ion collector is used for absorbing ionized positive ions, so that a film layer and a substrate are effectively protected. The electron bombardment type evaporation source system is long in feeding period and beneficial to large-scale production by the aid of the crucibles, and is simple in structure, simple and convenient to operate and high in automation degree.
Owner:DONGGUAN ANWELL DIGITAL MASCH CO LTD

Solar cell containing perovskite material and preparation method thereof

The invention discloses a solar cell containing perovskite material and a preparation method thereof. The perovskite solar cell comprises a light transmission layer, a transparent electrode layer, a transition layer, an electron transport layer, a light absorption layer, an electron absorption layer, a hole transport layer, and a top electrode which are successively stacked. The transition layer is an oxide of nickel. The electron transport layer is a quaternary oxide. The light absorption layer is a material provided with perovskite structure. The electron absorption layer is formed by fullerene derivative. The hole transport layer is formed by a ternary oxide. The top electrode is formed by a material with good conductivity. The solar cell effectively utilizes the performance of the perovskite material, is increased in the photoelectric converting efficiency by over 20 percent, and is suitable for batch production.
Owner:杨秋香

Method for depositing high-K gate dielectric on atomic layer on surface of graphene

The invention discloses a method for depositing high-K gate dielectric on an atomic layer on the surface of graphene, comprising the following steps: preparing a graphene material with a clean and smooth surface and few defects as a substrate sample for depositing high-k gate dielectric; putting the substrate sample in an ALD reaction chamber, and remotely controlling rays to make electron absorption energy of a P orbit of graphene jump, change outer electron orientation, damage a delocalized large-Pai bond and form a dangling bond; feeding water vapor to complete chemical adsorption on the surface of graphene until the surface of the substrate is saturated; and feeding a first precursor source to complete high-k gate dielectric deposition on the surface of graphene. According to invention, gamma rays are used to excite electrons and damage a delocalized large-Pai bond so as to improve the surface activity of graphene. The method for depositing high-K gate dielectric on an atomic layer on the surface of graphene is simple to implement and reliable. By adopting the method, a continuous, uniform and closely-combined high-k gate dielectric layer can be formed directly on the surface of graphene.
Owner:XIAN JIAOTONG LIVERPOOL UNIV

New application of graphdiyne nano-material serving as free radical scavenger and radiation protective agent

The invention discloses new application of a graphdiyne nano-material serving as a free radical scavenger and a radiation protective agent, and belongs to the technical fields of nano-materials, freeradical scavenging and radiation protection. The graphdiyne nano-material provided by the invention has a large conjugated pi bond structure, and also has a diyne bond structure with high reaction activity; because of the unique structures, the graphdiyne nano-material has good electron absorption capacity, so that free radicals can be effectively scavenged and can serve as the free radical scavenger. The graphdiyne has good free radical scavenging activity, can powerfully scavenge a large amount of ROS (Reactive Oxygen Species) produced by a body because of the induction of high-energy ray ina radiotherapy process, and the damage to normal tissues by the ROS is reduced, so that a radiation protecting effect is achieved. According to the new application of the graphdiyne nano-material serving as the free radical scavenger and the radiation protective agent, the graphdiyne nano-material is applied to free radical scavenging for the first time, and a new opportunity is provided for developing a new free radical scavenger for oxidation resistance.
Owner:INST OF HIGH ENERGY PHYSICS CHINESE ACAD OF SCI

Bithiophene-biscoumarin-based BODIPY near-infrared fluorescent dye and preparation method thereof

The invention relates to a bithiophene-biscoumarin-based BODIPY near-infrared fluorescent dye and a preparation method thereof, and the preparation method is realized by the following steps: carrying out Knoevenagel condensation reaction on a diiodo BODIPY derivative (I) and 7-(N, N-diethylamino) coumarin-3-formaldehyde to obtain a 3, 5-biscoumarin-based BODIPY derivative (II), and then carrying out Sonogashira coupling reaction of the 3, 5-biscoumarin-based BODIPY derivative (II) with 2-acetylene thiophene, so as to obtain the bithiophene-biscoumarin-based BODIPY derivative (III). The preparation method has the advantages of simple reaction steps, mild reaction conditions and good selectivity. The fluorescent dye has excellent photophysical properties such as high molar extinction coefficient (greater than 3.0 * 10 < 5 > cm <-1 > mol <-1 > L), large Stokes shift, good light stability and the like. The strongest electron absorption spectrum red shift is 770nm, the maximum fluorescence emission wavelength is 818nm, and the fluorescent dye has a good application prospect in the fields of optical imaging, fluorescence identification, tumor diagnosis, military reconnaissance, infrared camouflage, organic photovoltaic materials and the like.
Owner:NANJING FORESTRY UNIV

High-resolution, patterned-media master mask

A high-resolution, patterned-media master mask is disclosed. The high-resolution, patterned-media master mask includes an electron-absorption substrate for absorbing electrons from an electron beam (e-beam) during an e-beam exposure by an e-beam lithography process and suppressing a backscattering of the electrons based on an electron-backscattering-suppressing atomic number associated with a constituent atomic species of the electron-absorption substrate, wherein the electron-absorption substrate comprises a material composed of greater than fifty atomic percent of the constituent atomic species, and wherein the electron backscattering-suppressing atomic number is less than an atomic number eight. The high-resolution, patterned-media master mask further includes a patterned portion coupled with the electron-absorption substrate, wherein the patterned portion is patterned by the e-beam lithography process, and wherein a resolution of the patterned portion is increased in response to the electron-absorption substrate suppressing the backscattering of the electrons.
Owner:WESTERN DIGITAL TECH INC
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