106 results about "Electron absorption" patented technology

The present invention provides a highly sensitive, thin detector useful for observing low-voltage, high-resolution SEM images, and provides a charged particle beam application apparatus based on such a detector. The charged particle beam application apparatus includes a charged particle irradiation source, a charged particle optics for irradiating a sample with a charged particle beam emitted from the charged particle irradiation source, and an electron detection section for detecting electrons that are secondarily generated from the sample. The electron detection section includes a diode device that is a combination of a phosphor layer, which converts the electrons to an optical signal, and a device for converting the optical signal to electrons and subjecting the electrons to avalanche multiplication, or includes a diode device having an electron absorption region that is composed of at least a wide-gap semiconductor substrate with a bandgap greater than 2 eV.

A method to repair a scattering stencil type mask having a high electron beam scattering property and low electron absorption. In order to correct a defect caused at the time of manufacturing of the mask, which is being used when a reduction projection image is transferred onto a substrate and has a pattern projection portion comprising an electron beam scattering material, a repair membrane is formed in the defective portion of the mask by irradiating a charged particle beam to said defect while a gas including substances having high scattering properties are supplied to the close vicinity of the defective portion.

A toner including at least a binder resin; a colorant; and a charge controlling agent, in which the binder resin includes at least a polyester resin having a molecular weight distribution such that components having a molecular weight not greater than 500 are included in an amount of 4% by weight and at least a peak is present in a range of from 3,000 to 9,000 when measured by Gel Permeation Chromatography. In addition, the binder resin does not include a tetrahydrofuran-insoluble compound and the charge controlling agent is a resin charge controlling agent including at least units obtained from a monomer including a sulfonate group; an aromatic monomer including an electron absorption group; and an acrylic ester and / or a methacrylic ester monomer.

A shield assembly for an x-ray device is disclosed herein. The shield assembly includes a radiation shielding layer comprised of a first material; and a thermally conductive layer attached the radiation shielding layer. The thermally conductive layer is comprised of a second material. The shield assembly also includes an electron absorption layer attached to the radiation shielding layer. The electron absorption layer is comprised of a third material. The electron absorption layer is configured to absorb backscattered electrons.

The invention relates to A-D-A-type water / alcohol-soluble conjugated micromolecules and an application thereof in an organic photoelectric device. The A-D-A-type water / alcohol-soluble conjugated micromolecules have four portions A, B, C and D. A is a conjugated unit having an electron absorption nature, B is a bridged bond connecting the conjugated units A and D, C is a water / alcohol-soluble side chain containing a polar group, and D is a conjugated unit having an electron supply nature. The A-D-A-type conjugated micromolecules can be processed by utilizing high-polarity solvents such as alcohol, water and the like and are suitable for manufacturing complicated photoelectric devices. The A-D-A-type water / alcohol-soluble conjugated micromolecules can be used as a cathode interface decorative material to be applied to the organic photoelectric device, and the performance of the device can be improved.

In the application of the optical transmitter to any system for the compensation of passing degradation, the invention provides the optical transmitter which maintains constant modulator output and the highly reliable optical transmission by tuning, the alpha parameter for given systems.As the optical element back-face output power detected by PD6 depends on the optical element driving current amount, the electronic absorption amount of the EA optical modulator monitored by the electronic absorption monitor depends on the optical output of the optical element 5 and the EA optical modulator driving point of the driving part 8. It is possible to detect a change in the driving point in the EA optical modulator by taking a difference between the amount monitored by the PD 6 and the amount monitored by the electronic absorption monitor. Consequently by applying to the driving current source 10 the current corresponding to the change of the EA optical modulator driving point, it is possible to automatically compensate the modulator output 7 when the driving point of the EA optical modulator changes due to the change of the alpha parameter and the passing degradation.

A high electron mobility transistor comprises a GaN-based electron accumulation layer formed on a substrate, an electron supply layer formed on the electron accumulation layer, a source electrode and a drain electrode formed on the electron supply layer and spaced from each other, a gate electrode formed on the electron supply layer between the source and drain electrodes, and a hole absorption electrode formed on the electron accumulation layer so as to be substantially spaced from the electron supply layer. Since the hole absorption electrode is formed on the electron absorption layer in order to prevent holes generated by impact ionization from being accumulated on the electron accumulation layer, a kink phenomenon is prevented. Good drain-current / voltage characteristics are therefore obtained. A high power / high electron mobility transistor is provided with a high power-added efficiency and good linearity.

The invention discloses a novel CH3NH3PbI3 / polyimide composite material and a preparation method thereof. The preparation method comprises the following steps: (1) preparation of CH3NH3I and CH3NH3PbI3; (2) preparation of polyimide; (3) preparation of the CH3NH3PbI3 / polyimide composite material, i.e., dissolving the prepared polyimide into dimethyl formamide, adding the CH3NH3PbI3 into a solution, stirring with great force under room temperature, pouring an obtained uniform mixture onto a glass plate with a silica gel mould, performing programmed heating in a muffle furnace, after heating is ended, cooling to room temperature, and stripping to obtain a CH3NH3PbI3 / polyimide composite film. According to the CH3NH3PbI3 / polyimide composite material prepared by the preparation method, a perovskite / polyimide composite material is prepared by means of excellent film-forming property of the polyimide; electrical property of perovskite and mechanical property of the polyimide are both achieved; the CH3NH3PbI3 can serve as an electron absorption layer, the polyimide can serve as a hole transport layer, thus forming a perfect conductive network and facilitating the application of a perovskite composite material in a solar cell.

The invention provides measuring equipment of an electron accelerator output beam parameter. The measuring equipment comprises: an electron absorption board (8) and a plurality of electron absorption rods (7), wherein the each electron absorption rod is insulated with other components. The electron absorption rods possess a same rectangular section which is parallel to the electron absorption board. A length direction is parallel to the width direction of an accelerator scanning output window (11). Side surfaces with the same width of the electron absorption rods are vertical to an electron ray direction which is located in a position of the electron absorption rods. The electron absorption board and each electron absorption rod are connected to a current measurement device through leads respectively. Compared to the prior art, by using the measuring equipment of the invention, the electron beam energy measurement is integrated with the scanning uniformity measurement. Therefore, amounts of the accelerator output beam, a spectral distribution situation, the scanning uniformity can be simultaneously determined. The equipment and the apparatus needed by electron beam output parameter measurement can be simplified. In the prior art, the different apparatuses are needed by the electron beam energy measurement and the electron beam scanning uniformity measurement. By using the measuring equipment of the invention, the above problem can be solved.

The invention discloses a collecting electrode used for a traveling wave tube and a manufacture method thereof. The collecting electrode used for the traveling wave tube comprises an oxygen-free copper inner core (1), wherein a graphite loading head (2) in a conical structure is nested inside one end of the oxygen-free copper inner core (1) near an collecting electrode opening, the contact part of the oxygen-free copper inner core (1) and the graphite loading head (2) is filled with welding flux (3), in addition, the oxygen-free copper inner core (1) and the graphite loading head (2) are connected in a brazing way, and a ring (4) which is made of ultraperm and used for preventing the pull cracks of the graphite loading head (2) caused by heat expansion of the oxygen-free copper inner core (1) is sheathed on the outer ring of one end of the oxygen-free copper inner core (1) provided with the graphite loading head (2). The oxygen-free copper inner core and the graphite loading head of the collecting electrode used for the traveling wave tube with the structure are connected in the brazing way, so good heat conductive performance of the collecting electrode is ensured, in addition, the front end of the graphite loading head is processed into a conical shape, and the invention is more favorable for the electron absorption.

The invention relates to a Salen catalyst using CN as an axial ligand, and a preparation method and application thereof. The method comprises the following preparation steps of (1) synthesizing Salen H2; (2) performing mixing reaction on the Salen H2 with metal M salt ethyl alcohol solution to synthesize Salen-M; (3) performing mixing reaction on the Salen-M and the metal cyanide solution to synthesize the Salen catalyst using CN as the axial ligand. Compared with the prior art, the method has the advantages that the cyano group with strong electron absorption capability is used as the axial ligand; the catalyst is stable; the deterioration and inactivation cannot easily occur; in a reaction process of catalyzing the copolymerization of carbon dioxide and epoxypropane to synthesize polycarbonate, the inhibition of the generation of cyclic carbonates byproducts is facilitated; the reaction window is widened; under the high-temperature polymerization condition, the activity of the Salen catalyst can be greatly improved.

High solubility of pristine single and multi-walled carbon nanotubes using electron donors as solubilizers has been observed. The resulting carbon nanotube solution can be readily diluted with other organic solvents, such as acetone, toluene and methanol. SEM after solvent evaporation clearly shows that nanotubes are still present after being subjected to this procedure. Electronic absorption of these solutions is observed in both the UV and visible region. Strong light emission (=0.30) was observed at 561 nm for dilute solutions of aniline-dissolved carbon nanotubes diluted with acetone.

The invention discloses a MgIn2S4-based intermediate band solar energy absorbing material and a preparation method thereof, wherein the chemical formula is MgIn2-xSnxS4, 0 < x < 2, obtained by vacuumsolid-state reaction sintering process through the formation of a half-full intermediate band in the in-site doping element Sn of the parent compound MgIn2S4; Compared with the traditional solar cellmaterials, the above materials increase the electron absorption path and enhance the light absorption capacity.

The invention discloses a double-electrode perovskite solar battery and a preparation method thereof. The battery includes a transparent conducting substrate, a semiconductor electron absorption layer, a perovskite thin film, (a hole transfer layer) and a double-layer carbon electrode superposed in sequence. As for the double-layer carbon electrode, the first layer electrode is a structural layerhaving charge selective absorption and longitudinal transmission functions and capable of increasing the contact area between perovskite or the hole transfer layer and the carbon electrode, so that alarge size of a micron order non-contact area is avoided and charge transmission distance is reduced, and holes can be extracted timely and recombination of electrons and the holes is reduced; the second layer electrode is a structural layer having a good transverse charge transmission function and facilitating timely converged exporting of holes in the electrode, so that the battery efficiency isimproved. According to the invention, good contact of the carbon electrode in the perovskite solar battery and perovskite and the electrical conductivity of the carbon electrode are both taken into account, so that advantages of simple preparation, good economical performance and practicability and batch production convenience are achieved.

The exemplary embodiments of the method, system, software arrangement and computer-accessible medium according to the present invention facilitates an analysis of interactions between nonlinear absorbing materials and an incident (e.g., coherent) electromagnetic wave based on material properties and characteristics of the incident beam of the electromagnetic energy. For example, using the exemplary embodiments of the present invention, it is possible to determine a laser beam propagation in a variety of multiphoton absorbing materials. Energy levels associated with such materials, which may be associated with various electron absorption and / or relaxation phenomena, may be added to and / or removed from the analysis. Incident laser beams can vary from continuous wave to attoseconds in duration, and a numerical solution can be obtained that is radially and / or temporally dependent. Certain exemplary embodiments of the present invention can also be used to determine certain contributions of individual electronic energy levels within the materials to the total absorption.

The invention provides an electron-transport polymer semiconductor material based on pyridine substituted pyrrolopyrroledione and applied to an organic field effect transistor. The material is represented as the structural formula (I). In the material, pyridine substituted pyrrolopyrroledione, having strong electron absorption capability and good planarity, serves as a first polymerization monomerand tetrafluorobithiophene and tetrafluorobithiophene ethylene serve as second polymerization monomers; a plurality of fluorine atoms are introduced onto the thiophene unit, so that highest occupiedmolecular orbital (HOMO) energy level and lowest unoccupied molecular orbital (LUMO) energy level of the polymer are both reduced, and the polymer shows an n-type transportation character. By means ofthe weak interactions of F-S and F-H, interchain interaction of the polymer is improved, so that the organic field effect transistor with the polymer semiconductor material has high electron mobilitycapable of reaching up to 2.45 cm<2> / V*s.

A rapid data recording / reproducing method, a data recording system adopting the same, media for the system, and a tracking method, wherein the recording / reproducing method includes preparing media having a data recording layer in which a phase change is generated through electron absorption, generating electrons using an electron generating source at a position separated from the data recording layer by a predetermined interval, forming a magnetic field on the path of the electrons and cyclotron moving the electrons, recording data through local melting and cooling due to absorption of the electrons by the data recording layer. A micro-tip does not contact the data recording layer during electron collisions therewith, hence no damage is caused by or to the micro-tip. The present invention allows the region where the electron beam reaches the data recording layer to be minimized thereby maximizing the data recording density.

The invention discloses a low cost perovskite solar cell being suitable for production, and a preparation method thereof. The solar cell comprises a light transmission / transparent electrode layer, an electronic transmission layer, a light-absorption layer, an electronic absorbing layer, a cavity transmission layer and a top electrode, wherein the light transmission / transparent electrode layer, the electronic transmission layer, the light-absorption layer, the electronic absorbing layer, the cavity transmission layer and the top electrode are stacked successively; the light-absorption layer is provided with a material with a perovskite structure; the electronic absorbing layer is formed by fullerene derivatives; the cavity transmission layer is formed by ternary oxides; and the top electrode is formed by materials with good conductivity. The low cost perovskite solar cell effectively utilizes the performance of perovskite materials, and improves the photoelectric conversion efficiency of a perovskite solar cell by more than 17%, and is suitable for volume production.

The invention belongs to the technical field of luminescence and display, and particularly relates to a D-pi-A type AIE-TADF near-infrared luminescent material and a preparation method and application thereof. According to the near-infrared luminescent material, phenyl dicyanoquinoxaline with strong electron absorption is used as an acceptor (A) unit, and triarylamine[diphenylthiophenamine, di(4-methoxyphenyl)thiophenamine and di(4-fluorophenyl)thiophenamine] with strong electron donating is used as a donor (D) unit. The near-infrared luminescent material is high in thermal stability and has excellent carrier transport performance and photoluminescence performance, and the fluorescence quantum efficiency of the near-infrared luminescent material is 27%, so that the near-infrared luminescent material is widely applied to the fields of organic electroluminescent displays, biological imaging and the like.

The invention discloses an electron bombardment type evaporation source system which comprises a crucible mechanism, an electron beam generation mechanism, a scattered electron absorption pole and an ion collector. The crucible mechanism is provided with a plurality of crucibles, the scattered electron absorption pole is arranged above the crucibles, an outlet hole corresponding to the crucibles is arranged at the upper end of the electron beam generation mechanism, and the ion collector is positioned above the electron beam generation mechanism. Electron beams generated by the electron beam generation mechanism deflect by 270 degrees under the action of an electric field and a deflecting magnetic field to be incident into the crucibles so as to form an e-shaped track, and interference of scattered electrons can be effectively prevented. The scattered electron absorption pole is used for absorbing stimulated harmful scattered electrons, and the ion collector is used for absorbing ionized positive ions, so that a film layer and a substrate are effectively protected. The electron bombardment type evaporation source system is long in feeding period and beneficial to large-scale production by the aid of the crucibles, and is simple in structure, simple and convenient to operate and high in automation degree.

The invention discloses a solar cell containing perovskite material and a preparation method thereof. The perovskite solar cell comprises a light transmission layer, a transparent electrode layer, a transition layer, an electron transport layer, a light absorption layer, an electron absorption layer, a hole transport layer, and a top electrode which are successively stacked. The transition layer is an oxide of nickel. The electron transport layer is a quaternary oxide. The light absorption layer is a material provided with perovskite structure. The electron absorption layer is formed by fullerene derivative. The hole transport layer is formed by a ternary oxide. The top electrode is formed by a material with good conductivity. The solar cell effectively utilizes the performance of the perovskite material, is increased in the photoelectric converting efficiency by over 20 percent, and is suitable for batch production.

The invention discloses a method for depositing high-K gate dielectric on an atomic layer on the surface of graphene, comprising the following steps: preparing a graphene material with a clean and smooth surface and few defects as a substrate sample for depositing high-k gate dielectric; putting the substrate sample in an ALD reaction chamber, and remotely controlling rays to make electron absorption energy of a P orbit of graphene jump, change outer electron orientation, damage a delocalized large-Pai bond and form a dangling bond; feeding water vapor to complete chemical adsorption on the surface of graphene until the surface of the substrate is saturated; and feeding a first precursor source to complete high-k gate dielectric deposition on the surface of graphene. According to invention, gamma rays are used to excite electrons and damage a delocalized large-Pai bond so as to improve the surface activity of graphene. The method for depositing high-K gate dielectric on an atomic layer on the surface of graphene is simple to implement and reliable. By adopting the method, a continuous, uniform and closely-combined high-k gate dielectric layer can be formed directly on the surface of graphene.

The invention discloses a low-cost solar cell suitable for production and a preparation method thereof. The perovskite solar cell comprises: a light-transmissive / transparent electrode layer, an electron transmission layer, a light absorption layer, an electron absorption layer, a hole transmission layer and a top electrode which are successively laminated, wherein, the electron transmission layer is made of quaternary oxides; the light absorption layer is made of material with a perovskite structure; the electron absorption layer is constituted of fullerene derivatives; the hole transmission layer is constituted of ternary oxides; the top electrode is constituted of materials with excellent conductivity. According to the solar cell, the performance of perovskite material is effectively utilized; the photoelectric conversion efficiency of the perovskite solar cells is increased to 16% and above; the solar cell is suitable for mass production.

The exemplary embodiments of the method, system, software arrangement and computer-accessible medium according to the present invention facilitates an analysis of interactions between nonlinear absorbing materials and an incident electromagnetic wave based on material properties and characteristics of the incident beam of the electromagnetic energy. Using the exemplary embodiments of the present invention, it is possible to determine laser beam propagation in a variety of multiphoton absorbing materials. Energy levels associated with such materials, which may be associated with various electron absorption and / or relaxation phenomena, may be added to and / or removed from the analysis. Incident laser beams can vary from continuous wave to attoseconds in duration and a numerical solution can be obtained that is radially and / or temporally dependent. Certain exemplary embodiments of the present invention can also be used to determine certain contributions of individual electronic energy levels within the materials to the total 15 absorption.

The invention discloses a high-efficiency perovskite solar cell and a preparation method thereof. The perovskite solar cell comprises a light transmission / transparent electrode layer, a transition layer, an electron transport layer, a light absorption layer, an electron absorption layer, a hole transport layer, and a top electrode which are successively stacked. The transition layer is an oxide of nickel. The electron transport layer is a quaternary oxide. The light absorption layer is a material provided with perovskite structure. The electron absorption layer is formed by fullerene derivative. The hole transport layer is formed by a ternary oxide. The top electrode is formed by a material with good conductivity. The high-efficiency perovskite solar cell effectively utilizes the performance of the perovskite material, is increased in the photoelectric converting efficiency by over 20 percent, and is suitable for batch production.

The invention discloses new application of a graphdiyne nano-material serving as a free radical scavenger and a radiation protective agent, and belongs to the technical fields of nano-materials, freeradical scavenging and radiation protection. The graphdiyne nano-material provided by the invention has a large conjugated pi bond structure, and also has a diyne bond structure with high reaction activity; because of the unique structures, the graphdiyne nano-material has good electron absorption capacity, so that free radicals can be effectively scavenged and can serve as the free radical scavenger. The graphdiyne has good free radical scavenging activity, can powerfully scavenge a large amount of ROS (Reactive Oxygen Species) produced by a body because of the induction of high-energy ray ina radiotherapy process, and the damage to normal tissues by the ROS is reduced, so that a radiation protecting effect is achieved. According to the new application of the graphdiyne nano-material serving as the free radical scavenger and the radiation protective agent, the graphdiyne nano-material is applied to free radical scavenging for the first time, and a new opportunity is provided for developing a new free radical scavenger for oxidation resistance.

The electronic smoke and dust absorbing technology as one new technology includes ionizing and charging smoke and dust particles with high voltage static electricity and then deflecting and absorbing the charged smoke and dust particles with strong electric field. The environment protecting electronic kitchen fume eliminator and electronic smoke and dust absorber developed on the new technology can recover and filter fume, smoke and dust, produce negative oxygen ion and freshen and sterilize air, and is healthy. Compared with a common kitchen fume eliminator, the environment protecting electronic kitchen fume eliminator has one increased electronic fume recovering unit, which consists of mainly four parts of high voltage fume ionizing electrode, electrostatic fume deflecting and collecting board, oil liquid recovering tray, and high voltage power source with two output high voltages and automatic protecting function.

The invention discloses a hexaazabenzophenanthrene trianthraquinone derivative and a synthesis method thereof. The general structural formula of the hexaazabenzophenanthrene trianthraquinone derivative is asshown in the specification. In the general structural formula, R is a C6-C40 alkyl group, C6-C40 alkyl ester, C6-C40 alkylamide; or two ortho-position Rs synthesize C6-C40 substituted imide. The hexaazabenzophenanthrene trianthraquinone derivative can effectively improve the electron absorption capacity of hexaazabenzophenanthrene, and is a novel N-type semiconductor material. Meanwhile, the synthetic method is short in synthetic route, simple and convenient to operate, mild in reaction condition and easy to control, and does not need special equipment.

The invention relates to a bithiophene-biscoumarin-based BODIPY near-infrared fluorescent dye and a preparation method thereof, and the preparation method is realized by the following steps: carrying out Knoevenagel condensation reaction on a diiodo BODIPY derivative (I) and 7-(N, N-diethylamino) coumarin-3-formaldehyde to obtain a 3, 5-biscoumarin-based BODIPY derivative (II), and then carrying out Sonogashira coupling reaction of the 3, 5-biscoumarin-based BODIPY derivative (II) with 2-acetylene thiophene, so as to obtain the bithiophene-biscoumarin-based BODIPY derivative (III). The preparation method has the advantages of simple reaction steps, mild reaction conditions and good selectivity. The fluorescent dye has excellent photophysical properties such as high molar extinction coefficient (greater than 3.0 * 10 < 5 > cm <-1 > mol <-1 > L), large Stokes shift, good light stability and the like. The strongest electron absorption spectrum red shift is 770nm, the maximum fluorescence emission wavelength is 818nm, and the fluorescent dye has a good application prospect in the fields of optical imaging, fluorescence identification, tumor diagnosis, military reconnaissance, infrared camouflage, organic photovoltaic materials and the like.