20 results about "Polymer semiconductor" patented technology

The utility model discloses equipment for treating sewage containing high-molecular compounds by utilizing a photocatalysis technology, which comprises an intelligent power supply cabinet, a control system and a reactor equipment unit module, a photocatalysis reactor is arranged in a cabinet body of the reactor equipment unit module, a plurality of photocatalysis units are arranged in the photocatalysis reactor, and the photocatalysis units are connected with the intelligent power supply cabinet. Each photocatalytic unit comprises a plurality of photocatalytic tubes which are mounted in parallel, a photocatalytic coating is arranged on the outer surface layer of each photocatalytic tube and adopts a polymer semiconductor g-C3N4 coating, and the reactor equipment unit modules can be randomly matched and combined according to the sewage treatment capacity. All reactor equipment unit modules are connected with the control system. The whole set of equipment is simple and convenient to operate, small in occupied area, low in energy consumption, good in treatment effect, high in intelligent degree and extremely high in modularization degree, can be randomly matched and combined according to the sewage treatment capacity, does not need human participation, and saves the labor cost.

The invention relates to the field of research, development and application of novel semiconductor sensing equipment, in particular to a carbon-based sensing system based on a high-integration narrow-band imaging array and a construction method of the carbon-based sensing system. According to the invention, the carbon-based photoelectric sensing array is prepared by a liquid phase method and a transfer method with high uniformity and expandability, and a carbon-based sensing system is constructed on the basis of the carbon-based photoelectric sensing array; the carbon-based sensing system comprises a multi-pixel carbon-based sensing array based on conjugated polymer / semiconducting carbon nanotubes / metallic carbon nanotubes, an electrical readout system and an optical focusing assembly. The 4096-pixel integrated photoelectric sensing array and the carbon-based sensing system constructed by the 4096-pixel integrated photoelectric sensing array are prepared by a whole set of optimized liquid phase deposition, spin coating and transfer processes for the first time, and the system has quick response and high photoelectric response capability and can realize high-integration-level and high-performance optical signal detection and high-quality imaging functions.

This invention relates to the fields of organic synthesis and organic electronics, particularly to cyanobutadiene derivatives and their preparation methods and applications, and polymer semiconductor materials and their preparation methods and applications. The cyanobutadiene derivatives have the following general structural formula (1) or (2): This invention develops a series of cyanobutadiene derivative-based electron-deficient building blocks with simple structures, strong electron-withdrawing capabilities, and easy synthesis. These electron-deficient building blocks can be used as acceptor units in the development of organic photovoltaic, organic thermoelectric, and organic field-effect transistor materials.

The application discloses a small-molecule photo-crosslinking agent, a preparation method and application thereof, and belongs to the field of organic semiconductors. The structural formula of the small-molecule photo-crosslinking agent is shown as formula I: the preparation method comprises the following steps: reducing aldehyde groups in tri(4-formylphenyl)amine into benzyl alcohol to generate tribenzyl alcohol amine; under alkaline conditions, hydroxyl groups in the tribenzyl alcohol amine are converted into azide groups through a nucleophilic aromatic substitution reaction to generate a compound shown as formula I. The small-molecule photo-crosslinking agent has UV photo-crosslinking characteristics, can be used for ultraviolet photoetching patterning of solution-processed polymer semiconductors, is simple to synthesize, safe and efficient, and has the potential for large-scale production.

The invention provides a cyanation quinoxaline-based n-type polymer semiconductor material and a preparation method and application thereof, and the cyanation quinoxaline-based n-type polymer semiconductor material has a chemical structural general formula as follows: in the n-type polymer semiconductor material, quinoxaline is used as a matrix and has good solubility and a planar skeleton structure, and the structural formula is shown in the specification. The introduction of the cyano group significantly reduces the electricity shortage of the quinoxaline, so that the prepared n-type polymer semiconductor material has lower molecular front track energy level and more excellent photoelectric properties, thereby showing excellent application potential in the fields of organic field effect transistors, organic thermoelectricity or organic solar cells and the like.

The application discloses a stretchable high-energy light detector based on a perovskite quantum dot film. The detector comprises, from bottom to top, a stretchable substrate, a stretchable gate electrode, a stretchable insulating layer, a stretchable polymer semiconductor layer, a stretchable van der waals heterojunction source-drain electrode and a photosensitive layer. The stretchable high-energy light detector is of a bottom gate top contact structure, and the photosensitive layer is made of perovskite quantum dots with high absorption efficiency, high photoluminescence quantum efficiency and long exciton diffusion length. The application proposes a strategy of surface energy-induced self-assembly of perovskite quantum dots, prepares a uniform, compactly arranged, easily transferred and flexible worm-like perovskite quantum dot film, and realizes the application of a high-crystalline granular perovskite quantum dot film in a stretchable photoelectric detector.

The invention belongs to the technical field of preparation of polymer semiconductor materials, and particularly discloses a method for preparing a polyheptylimide photocatalyst by using organic and inorganic mixed molten salt, which comprises the following steps of: mixing high-nitrogen small organic molecules serving as a raw material with organic molten salt and inorganic molten salt in a vacuum glove box to prepare a precursor; and then carrying out high-temperature solid-phase polymerization in an inert atmosphere, washing and drying to obtain the target polyheptazinyl imide catalyst. The organic-inorganic mixed molten salt system is adopted to replace traditional pure inorganic molten salt, directional synthesis of polyheptylimide is promoted through mixed molten salt microenvironment regulation and control, the carrier transport resistance is effectively reduced, and photo-induced electron-hole recombination is inhibited. The prepared polyheptylimide has excellent photocatalytic oxidation performance, can realize H2O2 preparation through O2 activation and organic dye mineralization under visible light driving, has the advantages of simple process, low cost and good stability, is convenient for large-scale production and practical application, and has important value in the fields of energy conversion and environmental governance.

The invention relates to the technical field of electronic information, in particular to a preparation method of an N-type polymer transistor based on an electrolyte gate dielectric. Comprising the following steps: preparing a semiconductor solution and a gate medium solution, wherein the gate medium solution is prepared by jointly dissolving a polyvinylidene fluoride-trifluoroethylene copolymer P (VDF-co-TrFE), an ionic liquid and a polymer matrix in a solvent; a source electrode and a drain electrode are manufactured on a substrate by using gold metal particles in a thermal evaporation mode. And spin-coating a semiconductor solution on the substrate, and performing annealing treatment to form a polymer semiconductor layer. And spin-coating a gate dielectric solution on the semiconductor layer, and performing annealing treatment to form a solid electrolyte gate dielectric layer. And preparing an aluminum gate electrode by thermal evaporation to obtain the N-type polymer transistor based on the electrolyte gate dielectric. According to the method, the working voltage of the device can be greatly reduced, the performance of the device is improved, the short-range memory characteristic is shown, and the method has the advantages of being simple in process, high in stability and low in cost.

The application discloses a bipolar polymer semiconductor material containing difluoro-substituted indathrene and a preparation method and application thereof. N The copolymerization of the obtained copolymer monomer and 5,5'- (bistrimethyltinyl) -2,2'-dithiophene or (E) -1,2- (5- (bistrimethyltinyl) -thiophene-2-yl) ethylene, a centrosymmetric monomer, through a bromination reaction of bromo-succinimide to obtain a novel bipolar polymer semiconductor material containing difluoro-substituted indathrene with a D-A configuration. The synthesis route of the application is simple and efficient, raw materials are easy to obtain, the cost is low, the universality is high, and the repeatability is good. The material has the advantages of good solubility, excellent thermal stability and strong absorption spectrum range. The bipolar polymer semiconductor material prepared by the application is used as an active layer material, and an organic field effect transistor device prepared by the application has excellent electrical performance. The material has broad commercial prospects in organic thermoelectricity, organic field effect transistors, organic logic complementary circuits and other optoelectronic devices.

The invention belongs to the field of organic photoelectricity, and discloses a preparation method and application of an anchoring self-assembly polymer semiconductor transmission layer material containing a crosslinking unit. The chemical structural formula of the anchoring self-assembly polymer semiconductor transmission layer material containing the cross-linking unit meets the general formula of the following formula 1 or formula 2, Ar1, Ar2 and Ar3 units are common aromatic ring units or heteroaromatic ring units, B2, B3 and common alkyl chain or alkoxy chain units, A2 is a common acid unit, linker is a cross-linkable group, the polymerization degree n is 5-300, x, y and z represent repetitive units, and n is a positive integer. 0 < x < 1, 0 < y < 1, 0 < z < 1, and x + y + z = 1. According to the invention, the cross-linking unit is introduced, so that the optimal form can be locked in a cross-linking network after being formed, and the optimal state can be kept in subsequent processing, device working and long-term use, so that the aging performance and environmental stability of the polymer photovoltaic device can be improved.

The invention discloses an AI regulation and control high-frequency artificial nerve device based on homogeneous integrated OECT. The AI regulation and control high-frequency artificial nerve device comprises a receptor module, a neuron module and a synaptic module which are integrated on the same flexible polyimide substrate. The receptor module is used for collecting and converting optical, electric and chemical signals; the neuron module is used for signal amplification and logic processing; the synaptic module is used for signal storage and synaptic plasticity simulation. Core devices adopted by the three modules are OECTs manufactured through the same manufacturing method, a vertical stacking framework is adopted in the manufacturing process, a polymer semiconductor electron transport layer-gradient ion conductor transport layer bicontinuous network is constructed, and transmission efficiency matching is achieved through path separation and collaborative optimization. According to the artificial nerve device, high-sensitivity response of multi-mode signals is achieved, the sensing-processing-memorizing integrated function is completed, and the requirements of medical scenes such as neural restoration for biocompatibility and long-term working stability are met.

The invention relates to the technical field of electronic information, in particular to a preparation method of an N-type polymer transistor based on a titanium / aluminum / titanium laminated contact electrode. Comprising the following steps: preparing a semiconductor solution and a gate medium solution, wherein the gate medium solution is prepared by dissolving n-butyl acrylate in a solvent; a source electrode and a drain electrode are prepared by laminating titanium, aluminum and titanium metal particles on a substrate in a vacuum evaporation manner. And performing annealing treatment on the spin-coated semiconductor solution to form a polymer semiconductor layer, and performing annealing treatment on the spin-coated gate dielectric solution to form a polymer gate dielectric layer. And then preparing an aluminum gate electrode by thermal evaporation to obtain a target transistor. According to the method, bipolar transport of the donor-acceptor (bipolar) copolymer field effect transistor can be changed into unipolar transport, off-state current is reduced, the performance of the N-type polymer transistor is improved, meanwhile, cost is reduced, and conditions are created for achieving a complementary circuit.

The invention discloses a polymer semiconductor material with a controllable open-loop side chain and a preparation method and application thereof, the structural formula of the polymer semiconductor material is shown in the specification, the polymer semiconductor material is prepared through a Stille coupling reaction according to the preparation method, and the polymer semiconductor material can be used as an intrinsic stretchable organic semiconductor material.

The invention discloses application of a C-H sigma bond compound as a light-activated n-type dopant in semiconductors, and belongs to the field of semiconductor functional materials and the field of organic electronics. As a high-stability, photo-activatable and efficient n-type dopant, the C-H sigma bond compound can realize efficient doping of semiconductor materials such as small organic molecule semiconductors, conjugated polymer semiconductors, carbon nanotubes, two-dimensional semiconductors and the like. Meanwhile, the n-type dopant can be compatible with a high-precision ultraviolet exposure technology, and regioselective doping of a semiconductor material is achieved. When the C-H sigma bond compound is used as an n-type dopant to be applied to electronic devices based on semiconductor materials, such as thin film transistors, thermoelectric devices, solar cells and light-emitting diodes, the bulk phase and interface defects of the semiconductor materials can be eliminated, the carrier concentration of the materials can be regulated and controlled, the electrical performance of small-size devices can be remarkably improved, and the performance of the devices can be improved. Therefore, miniaturization and integration of the device are realized.

The present application relates to the technical field of organic polymer and organic optoelectronic material, in particular to acceptor unit based on oxygen boron nitrogen coordination, n-type polymer and its preparation and application. The present application prepares acceptor unit with strong electron-withdrawing property through Schiff base boron nitrogen coordination reaction, bromination reaction and coupling reaction, and prepares conjugated polymer with lower LUMO energy level through polymerization reaction. Further, by taking the polymer as an organic semiconductor layer, an organic field effect transistor and an organic thermoelectric material with higher electron mobility and power factor are prepared. The present application realizes efficient synthesis of electron-deficient acceptor and preparation of high electron mobility polymer, promotes the application of n-type polymer semiconductor material in the field of flexible, printing and wearable electronics, and has important significance for realizing industrialization of organic optoelectronic devices.

The application belongs to the field of polymer semiconductor materials, and discloses a polymer semiconductor material containing benzene or pyridine acetylene group triphenylamine and a hole transport material formed by cross-linking of the polymer semiconductor material and applications. The polymer semiconductor material has the structure shown in the following formula (I) or formula (II), and the polymer semiconductor material can be subjected to a "sulfhydryl-alkyne" click chemistry reaction with a small molecule containing sulfhydryl to obtain a cross-linked polymer hole transport material. The polymer semiconductor material has a relatively suitable HOMO energy level, and through the "sulfhydryl-alkyne" click chemistry reaction with a small molecule containing sulfhydryl cross-linking agent, a relatively low cross-linking temperature and a relatively high hole mobility can be achieved, and the polymer semiconductor material has a broad commercial prospect in the fields of optoelectronic semiconductor materials such as organic light-emitting diodes, organic solar cells, organic field effect transistors and perovskite solar cells.

A semiconductor package includes a redistribution structure including a wiring structure and an insulating structure covering the wiring structure, the redistribution structure having a first surface and a second surface, which are opposite to each other, the insulating structure including a polymer, a semiconductor chip on the first surface, the semiconductor chip being connected to at least one first wiring pattern in the wiring structure, a passivation insulating film covering the second surface, the passivation insulating film including an inner surface contacting the insulating structure and a hole sidewall defining a hole, the passivation insulating film including an inorganic insulating material, a conductive pad passing through the passivation insulating film via the hole and contacting the second wiring pattern, the conductive pad having a pad sidewall contacting the hole sidewall, and an external connection terminal on the conductive pad.

The application discloses a quinoid terpolymer which can be processed by an environment-friendly solvent and preparation and application thereof. The structure of the terpolymer is as follows: wherein m:n=75:27. The quinoid terpolymer belongs to a novel polymer, and has the advantages of simple preparation process, high industrial implementation and high yield. When the quinoid terpolymer is applied as a polymer semiconductor, the quinoid terpolymer can be processed by an environment-friendly solvent, and has a hole mobility as high as 2.09 cm 2 V –1 s –1 ​

The invention discloses a photocatalyst for degrading pollutants and a preparation method thereof, and belongs to the technical field of catalysts, the photocatalyst comprises graphite phase carbon nitride and nitrogen-doped titanium dioxide; graphite-phase carbon nitride is a polymer semiconductor of a graphene-like layered structure formed by sp2 hybridization of carbon and nitrogen atoms, and the basic structural unit is a tri-s-triazine ring or a triazine ring; the nitrogen-doped titanium dioxide is in crystal lattices of TiO2, and part of oxygen atoms are replaced by nitrogen atoms to form a doped structure; the mass ratio of the graphite-phase carbon nitride to the nitrogen-doped titanium dioxide is (2: 8)-(7: 3). A compact Z-type heterojunction between nitrogen-doped titanium dioxide and graphite-phase carbon nitride is successfully constructed through a hydrothermal-calcination two-step method; the structure can drive photo-induced electrons to be transferred from a conduction band of nitrogen-doped titanium dioxide to a valence band of graphite-phase carbon nitride and compounded with holes, so that efficient spatial separation of carriers is realized, and meanwhile, the strongest oxidation-reduction capability of a catalyst system is maintained.

The invention discloses a preparation device and a preparation method of a dielectric-active integrated super-stretching transistor, and belongs to the technical field of advanced manufacturing. The device comprises a high-voltage power supply, two micro-injection pumps, a coaxial spray head and an X-axis and Y-axis movement module. The preparation method comprises the following steps: firstly, sequentially preparing the hydrophobic layer, the source-drain electrode, the dielectric layer, the grid electrode and the substrate on the substrate, and then stripping and reversing to form a to-be-jet-printed sample; then, a coaxial electrofluid jet printing technology is utilized to enable a polymer semiconductor functional layer material and a high-viscosity packaging layer material to form coaxial jet flow, and a winding wrapping structure is directly printed on the sample; and finally, standing and curing to enable the functional layer to be in contact with the source and drain electrodes to form a conductive path. The core of the invention lies in that the micro-nano patterning and in-situ packaging of the semiconductor layer are realized at one time through coaxial jet printing, the packaging layer, the dielectric layer and the substrate are made of the same material, a sandwich structure without interface stress is formed, the tensile strain capacity (up to 200%), the air stability and the preparation success rate of the device are greatly improved, and the manufacturing cost is reduced. The technical bottlenecks of transfer printing damage, patterning difficulty, interface problems, environmental sensitivity and the like in the traditional process are solved.