40 results about "Polymer semiconductor" patented technology

The utility model discloses equipment for treating sewage containing high-molecular compounds by utilizing a photocatalysis technology, which comprises an intelligent power supply cabinet, a control system and a reactor equipment unit module, a photocatalysis reactor is arranged in a cabinet body of the reactor equipment unit module, a plurality of photocatalysis units are arranged in the photocatalysis reactor, and the photocatalysis units are connected with the intelligent power supply cabinet. Each photocatalytic unit comprises a plurality of photocatalytic tubes which are mounted in parallel, a photocatalytic coating is arranged on the outer surface layer of each photocatalytic tube and adopts a polymer semiconductor g-C3N4 coating, and the reactor equipment unit modules can be randomly matched and combined according to the sewage treatment capacity. All reactor equipment unit modules are connected with the control system. The whole set of equipment is simple and convenient to operate, small in occupied area, low in energy consumption, good in treatment effect, high in intelligent degree and extremely high in modularization degree, can be randomly matched and combined according to the sewage treatment capacity, does not need human participation, and saves the labor cost.

The invention relates to the field of research, development and application of novel semiconductor sensing equipment, in particular to a carbon-based sensing system based on a high-integration narrow-band imaging array and a construction method of the carbon-based sensing system. According to the invention, the carbon-based photoelectric sensing array is prepared by a liquid phase method and a transfer method with high uniformity and expandability, and a carbon-based sensing system is constructed on the basis of the carbon-based photoelectric sensing array; the carbon-based sensing system comprises a multi-pixel carbon-based sensing array based on conjugated polymer / semiconducting carbon nanotubes / metallic carbon nanotubes, an electrical readout system and an optical focusing assembly. The 4096-pixel integrated photoelectric sensing array and the carbon-based sensing system constructed by the 4096-pixel integrated photoelectric sensing array are prepared by a whole set of optimized liquid phase deposition, spin coating and transfer processes for the first time, and the system has quick response and high photoelectric response capability and can realize high-integration-level and high-performance optical signal detection and high-quality imaging functions.

This invention relates to the fields of organic synthesis and organic electronics, particularly to cyanobutadiene derivatives and their preparation methods and applications, and polymer semiconductor materials and their preparation methods and applications. The cyanobutadiene derivatives have the following general structural formula (1) or (2): This invention develops a series of cyanobutadiene derivative-based electron-deficient building blocks with simple structures, strong electron-withdrawing capabilities, and easy synthesis. These electron-deficient building blocks can be used as acceptor units in the development of organic photovoltaic, organic thermoelectric, and organic field-effect transistor materials.

The application belongs to the technical field of organic electrochemical transistors, and discloses a p-type organic electrochemical transistor biosensor, a preparation method and application. The sensor comprises a first substrate and a second substrate. A source electrode is arranged on one side of the first substrate. A polymer semiconductor channel is arranged on the source electrode. A drain electrode is arranged on the polymer semiconductor channel. A first floating gate is arranged on the other side of the first substrate. The first substrate, the drain electrode and the first floating gate are covered with a first electrolyte layer. A gate electrode is arranged on one side of the second substrate. A gate modification layer is arranged on the gate electrode. A second floating gate is arranged on the other side of the second substrate. The second substrate, the gate modification layer and the second floating gate are covered with a second electrolyte layer. The first floating gate and the second floating gate are connected through a wire. The application realizes the detection of an ultralow concentration (10 ‑20 mol / L) H1N1 virus marker and realizes the detection of 10 ‑17 mol / L H1N1 virus marker in an ultrashort time.

The invention belongs to the field of organic electronic manufacturing, and particularly relates to an organic semiconductor photoresist with a hierarchical structure and stable environment, a patterning method and an organic electronic device, and the formula of the photoresist mainly comprises a polymer semiconductor, cross-linkable packaging molecules, a photoinitiator and two or more mixed solvents. The controllable phase separation is realized based on the solubility difference of the polymer semiconductor and the photo-crosslinking packaging molecules in the mixed solvent, and the graded phase distribution forms a hierarchical structure, so that the photo-crosslinking packaging molecules form a self-packaging structure for the polymer semiconductor. Compared with the prior art, the problems that in the prior art, an N-type polymer semiconductor is poor in air stability, and a semiconductor film is prone to being affected by solvent erosion in the solution processing process are solved; according to the method, a controllable gradient separation structure is formed autonomously by utilizing a solvent to drive semiconductor photoresist, and an organic semiconductor film with a compact hierarchical staggered network structure is further prepared through patterning.

The application belongs to the technical field of organic semiconductor materials, and particularly relates to an intrinsic low-melting-point polymer semiconductor material and a preparation method and application thereof. The polymer semiconductor material is a pyrrolopyrroloquinoline intrinsic low-melting-point polymer with a macrocyclic crown ether as a side chain. The application reduces the melting point of an existing organic polymer by introducing the macrocyclic crown ether into the side chain. The polymer provided by the application can be used to obtain a high-orientation semiconductor thin film through a melt friction transfer method, and the semiconductor thin film can be used as an organic semiconductor layer in an organic field effect transistor to obtain a new organic field effect transistor. The carrier mobility of the organic field effect transistor is improved by regulating a molecular packing mode. The application provides a feasible method for solvent-free processing of an organic field effect transistor device, which will help to solve the environmental pollution problem caused by traditional solution processing using a chlorinated solvent.

The invention belongs to the technical field of photocatalysis, and particularly relates to a g-C3N4 / TiO2-x heterojunction composite material as well as a preparation method and application thereof. As a nonmetal polymer semiconductor material, the graphite-phase carbon nitride has abundant edge amino groups and pore structures and narrow band gaps, so that the graphite-phase carbon nitride becomes an excellent nonmetal semiconductor photocatalytic material. The graphite-phase carbon nitride and the black titanium dioxide are utilized to construct a heterojunction, so that the cycling stability of the black titanium dioxide can be improved, the electron transmission path and the quantum efficiency of the black titanium dioxide are deeply optimized, the forbidden bandwidth is reduced, the absorbable light range is wider, and the light capturing capability is high; the heterojunction composite material is endowed with excellent photocatalytic activity.

The application discloses a small-molecule photo-crosslinking agent, a preparation method and application thereof, and belongs to the field of organic semiconductors. The structural formula of the small-molecule photo-crosslinking agent is shown as formula I: the preparation method comprises the following steps: reducing aldehyde groups in tri(4-formylphenyl)amine into benzyl alcohol to generate tribenzyl alcohol amine; under alkaline conditions, hydroxyl groups in the tribenzyl alcohol amine are converted into azide groups through a nucleophilic aromatic substitution reaction to generate a compound shown as formula I. The small-molecule photo-crosslinking agent has UV photo-crosslinking characteristics, can be used for ultraviolet photoetching patterning of solution-processed polymer semiconductors, is simple to synthesize, safe and efficient, and has the potential for large-scale production.

The invention provides a cyanation quinoxaline-based n-type polymer semiconductor material and a preparation method and application thereof, and the cyanation quinoxaline-based n-type polymer semiconductor material has a chemical structural general formula as follows: in the n-type polymer semiconductor material, quinoxaline is used as a matrix and has good solubility and a planar skeleton structure, and the structural formula is shown in the specification. The introduction of the cyano group significantly reduces the electricity shortage of the quinoxaline, so that the prepared n-type polymer semiconductor material has lower molecular front track energy level and more excellent photoelectric properties, thereby showing excellent application potential in the fields of organic field effect transistors, organic thermoelectricity or organic solar cells and the like.

The application discloses a stretchable high-energy light detector based on a perovskite quantum dot film. The detector comprises, from bottom to top, a stretchable substrate, a stretchable gate electrode, a stretchable insulating layer, a stretchable polymer semiconductor layer, a stretchable van der waals heterojunction source-drain electrode and a photosensitive layer. The stretchable high-energy light detector is of a bottom gate top contact structure, and the photosensitive layer is made of perovskite quantum dots with high absorption efficiency, high photoluminescence quantum efficiency and long exciton diffusion length. The application proposes a strategy of surface energy-induced self-assembly of perovskite quantum dots, prepares a uniform, compactly arranged, easily transferred and flexible worm-like perovskite quantum dot film, and realizes the application of a high-crystalline granular perovskite quantum dot film in a stretchable photoelectric detector.

The invention belongs to the technical field of preparation of polymer semiconductor materials, and particularly discloses a method for preparing a polyheptylimide photocatalyst by using organic and inorganic mixed molten salt, which comprises the following steps of: mixing high-nitrogen small organic molecules serving as a raw material with organic molten salt and inorganic molten salt in a vacuum glove box to prepare a precursor; and then carrying out high-temperature solid-phase polymerization in an inert atmosphere, washing and drying to obtain the target polyheptazinyl imide catalyst. The organic-inorganic mixed molten salt system is adopted to replace traditional pure inorganic molten salt, directional synthesis of polyheptylimide is promoted through mixed molten salt microenvironment regulation and control, the carrier transport resistance is effectively reduced, and photo-induced electron-hole recombination is inhibited. The prepared polyheptylimide has excellent photocatalytic oxidation performance, can realize H2O2 preparation through O2 activation and organic dye mineralization under visible light driving, has the advantages of simple process, low cost and good stability, is convenient for large-scale production and practical application, and has important value in the fields of energy conversion and environmental governance.

The invention relates to the technical field of electronic information, in particular to a preparation method of an N-type polymer transistor based on an electrolyte gate dielectric. Comprising the following steps: preparing a semiconductor solution and a gate medium solution, wherein the gate medium solution is prepared by jointly dissolving a polyvinylidene fluoride-trifluoroethylene copolymer P (VDF-co-TrFE), an ionic liquid and a polymer matrix in a solvent; a source electrode and a drain electrode are manufactured on a substrate by using gold metal particles in a thermal evaporation mode. And spin-coating a semiconductor solution on the substrate, and performing annealing treatment to form a polymer semiconductor layer. And spin-coating a gate dielectric solution on the semiconductor layer, and performing annealing treatment to form a solid electrolyte gate dielectric layer. And preparing an aluminum gate electrode by thermal evaporation to obtain the N-type polymer transistor based on the electrolyte gate dielectric. According to the method, the working voltage of the device can be greatly reduced, the performance of the device is improved, the short-range memory characteristic is shown, and the method has the advantages of being simple in process, high in stability and low in cost.

The application discloses a bipolar polymer semiconductor material containing difluoro-substituted indathrene and a preparation method and application thereof. N The copolymerization of the obtained copolymer monomer and 5,5'- (bistrimethyltinyl) -2,2'-dithiophene or (E) -1,2- (5- (bistrimethyltinyl) -thiophene-2-yl) ethylene, a centrosymmetric monomer, through a bromination reaction of bromo-succinimide to obtain a novel bipolar polymer semiconductor material containing difluoro-substituted indathrene with a D-A configuration. The synthesis route of the application is simple and efficient, raw materials are easy to obtain, the cost is low, the universality is high, and the repeatability is good. The material has the advantages of good solubility, excellent thermal stability and strong absorption spectrum range. The bipolar polymer semiconductor material prepared by the application is used as an active layer material, and an organic field effect transistor device prepared by the application has excellent electrical performance. The material has broad commercial prospects in organic thermoelectricity, organic field effect transistors, organic logic complementary circuits and other optoelectronic devices.

The invention discloses a method for constructing and reinforcing a hybrid biological membrane system composed of methane bacteria / carbon nitride. According to the method, a hybrid system composed of methanogens and an extracellular polymeric substance (EPS) semiconductor material (modified graphite-phase carbon nitride) is constructed, and the hybrid system is used for preparing the carbon nitride-modified graphite-phase carbon nitride hybrid system. The carbon nitride-modified graphite-phase carbon nitride hybrid system has the advantages that the carbon nitride-modified graphite-phase carbon nitride hybrid system is used for preparing the carbon nitride-modified graphite-phase carbon nitride hybrid system, and the carbon nitride-modified graphite-phase carbon nitride hybrid system; the extracellular polymeric substance in the biological membrane obviously improves the light energy utilization efficiency and the operation stability of the system; nano conductive particles are introduced to the surfaces of methane bacteria cells, so that the utilization rate of extracellular electrons by the cells is improved. The method effectively solves the problems of low efficiency, high energy consumption, low product selectivity and the like in the process of reducing carbon dioxide into methane in a traditional biological hybrid system, and has the advantages of simple and convenient process, low energy consumption and high product selectivity.

A non-volatile multi-state electrochemical memory and its processing method. The memory includes a source electrode, a drain electrode, a gate electrode, and an electrolyte layer disposed on a substrate. The source electrode serves as the bottom electrode, the drain electrode serves as the top electrode, and a polymer semiconductor channel is disposed between the source and drain electrodes to form an upright sandwich structure. The gate electrode is disposed on the side of the sandwich structure, and the polymer semiconductor channel is disposed between the gate electrode and the surface of the substrate. The electrolyte layer covers and fills the gate electrode, the sandwich structure, and the gap between the gate electrode and the sandwich structure from top to bottom. The gate electrode is connected to a write pulse circuit, and the drain electrode is connected to a read pulse circuit. The storage conductance value is calculated by obtaining a read current. The processing method includes using a solution processing method to deposit the polymer semiconductor channel, enhancing channel crystallization of the channel, and using a reactive ion etching method to open the channel. The present invention can realize multi-state non-volatile storage in a single device, with accurate writing, simple structure, and low processing cost.

The invention belongs to the field of organic photoelectricity, and discloses a preparation method and application of an anchoring self-assembly polymer semiconductor transmission layer material containing a crosslinking unit. The chemical structural formula of the anchoring self-assembly polymer semiconductor transmission layer material containing the cross-linking unit meets the general formula of the following formula 1 or formula 2, Ar1, Ar2 and Ar3 units are common aromatic ring units or heteroaromatic ring units, B2, B3 and common alkyl chain or alkoxy chain units, A2 is a common acid unit, linker is a cross-linkable group, the polymerization degree n is 5-300, x, y and z represent repetitive units, and n is a positive integer. 0 < x < 1, 0 < y < 1, 0 < z < 1, and x + y + z = 1. According to the invention, the cross-linking unit is introduced, so that the optimal form can be locked in a cross-linking network after being formed, and the optimal state can be kept in subsequent processing, device working and long-term use, so that the aging performance and environmental stability of the polymer photovoltaic device can be improved.

The application discloses a stretchable organic X-ray photodetector based on a polymer semiconductor thin film, and particularly relates to a method for regulating and controlling self-assembly of a polymer blend thin film, and a high-sensitivity direct stretchable X-ray photodetector based on a polymer. The application proposes a strategy of eccentric spin coating for inducing self-assembly of a blend film, and a stretchable polymer thin film with nano confinement is prepared, and effective control of a nano morphology of a photoelectric material is realized. Based on the nano confinement thin film, the prepared stretchable X-ray photodetector not only has the X-ray detection capability of high sensitivity, fast response and low dose, but also has high light transmittance, high stretchability and fatigue resistance. Meanwhile, the application has unique advantages of low cost, large area and high flexibility, can be directly attached to a complex surface or structure of a living body, and thus high-definition detection results can be obtained in a lower radiation dose and a very short time, which has important significance in the fields of safety inspection and precision medical treatment.

The invention discloses an AI regulation and control high-frequency artificial nerve device based on homogeneous integrated OECT. The AI regulation and control high-frequency artificial nerve device comprises a receptor module, a neuron module and a synaptic module which are integrated on the same flexible polyimide substrate. The receptor module is used for collecting and converting optical, electric and chemical signals; the neuron module is used for signal amplification and logic processing; the synaptic module is used for signal storage and synaptic plasticity simulation. Core devices adopted by the three modules are OECTs manufactured through the same manufacturing method, a vertical stacking framework is adopted in the manufacturing process, a polymer semiconductor electron transport layer-gradient ion conductor transport layer bicontinuous network is constructed, and transmission efficiency matching is achieved through path separation and collaborative optimization. According to the artificial nerve device, high-sensitivity response of multi-mode signals is achieved, the sensing-processing-memorizing integrated function is completed, and the requirements of medical scenes such as neural restoration for biocompatibility and long-term working stability are met.

The invention provides a polymer semiconductor film and a preparation method thereof. Specifically, a plurality of gaps are distributed on the polymer semiconductor film; wherein the area of the gap is 0.1 [mu] m < 2 > to 10 mm < 2 >; and the distribution density range of the notches is 0.001 to 100000 / cm < 2 >. In the stretching process, the notches can serve as stress release points, stress applied to the polymer semiconductor film is effectively dispersed, it is ensured that the morphology of an effective area of the polymer semiconductor film is kept stable, and therefore random cracks caused by stress concentration are avoided.

This invention belongs to the field of electronic device technology and discloses a light-assisted self-destructing electronic device and its fabrication method. The light-assisted self-destructing electronic device comprises, from bottom to top, a Si / SiO2 wafer, an organic polymer semiconductor layer, and a metal electrode layer; the organic polymer semiconductor layer comprises a blend of P3HT and N2200, and the metal electrode layer comprises a source and a drain. This invention achieves bipolar modulation by using a P3HT / N2200 blend as a bipolar polymer material, exhibiting advantages in multi-carrier modulation and photoresponse characteristics. It allows control of information visibility by adjusting light exposure; information can be read when light is applied and erased when light is removed, achieving self-destruction and enhancing information security. The light-assisted self-destructing electronic device of this invention has a simple structural design, balanced electron-hole transport characteristics, a high on / off ratio, and excellent synaptic characteristics.

The invention relates to the technical field of electronic information, in particular to a preparation method of an N-type polymer transistor based on a titanium / aluminum / titanium laminated contact electrode. Comprising the following steps: preparing a semiconductor solution and a gate medium solution, wherein the gate medium solution is prepared by dissolving n-butyl acrylate in a solvent; a source electrode and a drain electrode are prepared by laminating titanium, aluminum and titanium metal particles on a substrate in a vacuum evaporation manner. And performing annealing treatment on the spin-coated semiconductor solution to form a polymer semiconductor layer, and performing annealing treatment on the spin-coated gate dielectric solution to form a polymer gate dielectric layer. And then preparing an aluminum gate electrode by thermal evaporation to obtain a target transistor. According to the method, bipolar transport of the donor-acceptor (bipolar) copolymer field effect transistor can be changed into unipolar transport, off-state current is reduced, the performance of the N-type polymer transistor is improved, meanwhile, cost is reduced, and conditions are created for achieving a complementary circuit.

The invention relates to the technical field of photocatalysts, and discloses a tungsten and gold modified g-C3N4 hydrogen production composite catalyst as well as a preparation method and application thereof. The catalyst provided by the invention is a composite material of tungsten, gold and a polymer semiconductor, and is composed of ultrathin g-C3N4 nanosheets, highly dispersed W monatomic and Au nanoclusters. The invention also discloses a method for preparing the catalyst. The method specifically comprises the following steps: step 1, preparing a yellow g-C3N4 block; step 2, preparing a white g-C3N4 sheet; step 3, mixing CN and Na2WO4 raw materials; step 4, preparing a g-C3N4 sheet loaded with W monatomic atoms; 5, the g-C3N4 thin sheet and HAuCl4 are mixed; and step 6, preparing a g-C3N4 sheet loaded with the Au nanocluster and the W single atom. The invention also discloses a method for applying the catalyst to photocatalytic water decomposition for hydrogen production. The system provided by the invention solves the common problems of low active site density, poor photon-generated carrier separation efficiency, narrow spectral response range and the like of the g-C3N4-based photocatalyst, and realizes high-efficiency photocatalytic water decomposition hydrogen production.

The invention belongs to the field of polymer semiconductor materials, and discloses a polymer containing a bipyridinopyrazine diindene heterocyclic unit and a preparation method and application thereof. The chemical structural formula of the polymer containing the bispyridinopyrazine diindene heterocyclic ring unit is shown as a formula I or a formula II. The preparation method of the polymer containing the bispyridinopyrazine diindene heterocyclic unit has the advantages of being high in synthesis method universality, mild in synthesis condition, high in synthesis yield and the like, and can be popularized and applied to amplified synthesis and production in the industry. A thin film field effect transistor prepared by taking the polymer semiconductor containing the bipyridinopyrazine diindene heterocyclic ring unit as an active layer, which is reported by the invention, shows an excellent electron transmission characteristic; the polymer semiconductor material has wide market prospects in p-n junctions, organic thermoelectricity, complementary logic circuits, organic solar cells, field effect transistors and other organic electronic devices. # imgabs0 #

The invention relates to the technical field of functional materials and sensing, and discloses a SnO2 (at) g-C3N4 (at) CeO2 composite material and a preparation method and application thereof.The preparation method of the composite material comprises the steps that stannous chloride dihydrate, cerium nitrate hexahydrate and deionized water are mixed, sodium hydroxide and cetyltrimethylammonium bromide are added, and stirring and uniform dispersing are conducted; then adding g-C3N4, and stirring; carrying out hydrothermal reaction on the stirred mixed solution, centrifuging, washing and drying; and finally, carrying out high-temperature calcination to obtain the SnO2 (at) g-C3N4 (at) CeO2 composite material. The novel metal oxide-polymer semiconductor-rare earth oxide ternary composite gas sensitive material SnO2 (at) g-C3N4 (at) CeO2 is constructed and applied to a gas sensor, and rapid detection of target gas at low temperature can be realized by assisting light irradiation with certain wavelength and intensity.

The application discloses a high-safety solid-state lithium metal battery, which comprises a negative electrode, a solid-state electrolyte and a positive electrode, and further comprises a hetero-interface layer between the negative electrode and the solid-state electrolyte, wherein the hetero-interface layer is a double-layer composite structure composed of a passivation layer and a polymer / semiconductor, and the passivation layer is at least one of a nitride layer, an oxide layer, a nitrogen chemical layer, a carbon-based layer, a phosphate layer, a fluoride layer and a metal-based protective layer. By introducing the hetero-interface layer between the lithium metal negative electrode and the solid-state electrolyte, the physical contact between the lithium metal negative electrode and the solid-state electrolyte can be effectively improved, the growth of lithium dendrites is prevented, the interface reaction between the lithium metal and the solid-state electrolyte is reduced, the problem of thermal runaway fire combustion under high temperature is effectively inhibited, and the stability, safety and cycle performance of the solid-state lithium metal battery under room temperature and high temperature are enhanced.

The invention discloses a polymer semiconductor material with a controllable open-loop side chain and a preparation method and application thereof, the structural formula of the polymer semiconductor material is shown in the specification, the polymer semiconductor material is prepared through a Stille coupling reaction according to the preparation method, and the polymer semiconductor material can be used as an intrinsic stretchable organic semiconductor material.

The invention belongs to the technical field of organic semiconductor materials, and particularly relates to a polymer semiconductor material with stable photoetching as well as a preparation method and application thereof. The polymer semiconductor material disclosed by the invention is a D-A type copolymer PFIDTO-BSe, and the structure of the polymer semiconductor material comprises a biselenophen donor unit and a difluoro indacenone receptor unit. The material has excellent ultraviolet stability: the mobility retention rate gt after irradiation of 365 nm; the solvent resistance is good, and the migration rate retention rate gt is obtained after NMP soaking is conducted for 1000 minutes; 95%. Carrying out Stille coupling to synthesize a polymer; and further preparing an organic field effect transistor array by adopting a photoetching process, namely spin-coating a semiconductor film on the modified substrate, depositing photoresist and patterning, and stripping the photoresist after evaporating a source electrode and a drain electrode. The polymer semiconductor material is compatible with a photoetching process, so that 7-micron channel precision patterning is realized, and the transistor array yield is gt; the method is suitable for manufacturing flexible integrated circuits.

The invention discloses application of a C-H sigma bond compound as a light-activated n-type dopant in semiconductors, and belongs to the field of semiconductor functional materials and the field of organic electronics. As a high-stability, photo-activatable and efficient n-type dopant, the C-H sigma bond compound can realize efficient doping of semiconductor materials such as small organic molecule semiconductors, conjugated polymer semiconductors, carbon nanotubes, two-dimensional semiconductors and the like. Meanwhile, the n-type dopant can be compatible with a high-precision ultraviolet exposure technology, and regioselective doping of a semiconductor material is achieved. When the C-H sigma bond compound is used as an n-type dopant to be applied to electronic devices based on semiconductor materials, such as thin film transistors, thermoelectric devices, solar cells and light-emitting diodes, the bulk phase and interface defects of the semiconductor materials can be eliminated, the carrier concentration of the materials can be regulated and controlled, the electrical performance of small-size devices can be remarkably improved, and the performance of the devices can be improved. Therefore, miniaturization and integration of the device are realized.

Disclosed are an optically transparent non-volatile transistor memory and a method for preparing the same, belonging to the technical field of memories. The memory has a top-gate structure, comprising, from bottom to top, a substrate, a source-drain electrode, a polymer semiconductor layer, a ferroelectric gate insulating layer, and a gate electrode. The substrate, source-drain electrode, polymer semiconductor layer, ferroelectric gate insulating layer, and gate electrode are all made of optically transparent materials, and the polymer semiconductor layer, ferroelectric gate insulating layer, and gate electrode are all prepared by a solution method. The electrical characteristics of the memory tested in a darkroom and under illumination conditions exhibit good repeatability, indicating good optical stability, significant information storage function, good operating reliability, and stability. The entire preparation process of the memory is prepared by a full solution method, with a processing temperature below 150°C. This method has the advantages of simple process, good process continuity, low-temperature preparation, inexpensive preparation equipment, and low preparation cost, which can greatly enhance its commercial competitiveness.

The present application relates to the technical field of organic polymer and organic optoelectronic material, in particular to acceptor unit based on oxygen boron nitrogen coordination, n-type polymer and its preparation and application. The present application prepares acceptor unit with strong electron-withdrawing property through Schiff base boron nitrogen coordination reaction, bromination reaction and coupling reaction, and prepares conjugated polymer with lower LUMO energy level through polymerization reaction. Further, by taking the polymer as an organic semiconductor layer, an organic field effect transistor and an organic thermoelectric material with higher electron mobility and power factor are prepared. The present application realizes efficient synthesis of electron-deficient acceptor and preparation of high electron mobility polymer, promotes the application of n-type polymer semiconductor material in the field of flexible, printing and wearable electronics, and has important significance for realizing industrialization of organic optoelectronic devices.