163 results about "Polymer semiconductor" patented technology

A display system includes a substrate upon which the display system is fabricated; a printable electrooptic display material, such as a microencapsulated electrophoretic suspension; electrodes (typically based on a transparent, conductive ink) arranged in an intersecting pattern to allow specific elements or regions of the display material to be addressed; insulating layers, as necessary, deposited by printing; and an array of nonlinear elements that facilitate matrix addressing. The nonlinear devices may include printed, particulate Schottky diodes, particulate PN diodes, particulate varistor material, silicon films formed by chemical reduction, or polymer semiconductor films. All elements of the display system may be deposited using a printing process.

A quantum dot electroluminescence device and a method of fabricating the same are provided. The quantum dot electroluminescence device comprises an insulating substrate; a quantum dot luminescence layer supported by the insulating substrate, and composed of a monolayer or multilayer of quantum dots, which are cross-linked by a cross-link agent; an anode electrode and a cathode electrode connected to an external power supply to inject carriers to the quantum dot luminescence layer; a hole transfer layer interposed between the anode electrode and the quantum dot luminescence layer, and composed of p-type polymer semiconductor; and an electron transfer layer interposed between the cathode electrode and the quantum dot luminescence layer, and composed of metal oxide or n-type polymer semiconductor.

A quantum dot electroluminescence device and a method of fabricating the same are provided. The quantum dot electroluminescence device comprises an insulating substrate; a quantum dot luminescence layer supported by the insulating substrate, and composed of a monolayer or multilayer of quantum dots, which are cross-linked by a cross-link agent; an anode electrode and a cathode electrode connected to an external power supply to inject carriers to the quantum dot luminescence layer; a hole transfer layer interposed between the anode electrode and the quantum dot luminescence layer, and composed of p-type polymer semiconductor; and an electron transfer layer interposed between the cathode electrode and the quantum dot luminescence layer, and composed of metal oxide or n-type polymer semiconductor.

An active region or channel for printed, organic or plastic electronics or polymer semiconductors, such as organic field-effect transistors (OFETs), is obtained by using an enhanced inkjet drop-cast printing technique. A two-liquid system is employed to achieve the direct growth of well-oriented organic crystals at the active region of channel. High-performance electrical properties exhibiting high carrier mobility and low threshold voltage are obtained due to the proper orientation of molecules in the grown crystal in a highest mobility direction, due to the absence of grain boundaries, and due to low trap densities. The hydrophobic-hydrophilic interactions between the liquids utilized, which results in the fabrication of low-cost and mass-producible printable electronic devices for applications in flexible displays, electronic signages, photovoltaic panels, membrane keyboards, radio frequency identification tags (RFIDs), electronic sensors, and integrated electronic circuits.

Disclosed are an organic polymer semiconductor, an ambipolar organic thin film transistor using the same, an electronic device comprising the ambipolar organic thin film transistor and methods of fabricating the same. Example embodiments relate to an organic polymer semiconductor, which may include an aromatic ring derivative having p-type semiconductor properties and a heteroaromatic ring having n-type semiconductor properties in the main chain thereof, and which thus may exhibit both p-type transistor properties and n-type transistor properties when used in the organic active layer of an electronic device, e.g., an organic thin film transistor, an ambipolar organic thin film transistor using such an organic polymer semiconductor, an electronic device comprising the ambipolar organic thin film transistor and methods of fabricating the same.

There is provided compounds of formula I, ambipolar semiconductor material derived from such compounds and devices comprising such ambipolar semiconductor material.[Da-Acore-Db-Ac-]n  (I)

The invention provides a compound with a structure shown in a formula (I) in the specification, a polymer and a polymer semiconducting material. An N atom is introduced into the compound and an alkyl chain is introduced into the N atom, so that the polymer based on the compound containing N and S hetero atoms has excellent solubility in an organic solvent. Furthermore, the compound provided by the invention contains thiofuran rings at two ends, and can effectively reduce the steric hindrance between adjacent units in the polymer based on the compound containing N and S hetero atoms, and improve the conjugation degree of the polymer, thus guaranteeing that an organic thin film transistor using the polymer semiconducting material has high mobility. The invention also provides the organic thin film transistor using the polymer semiconducting material. Experiment results show that the organic thin film transistor provided by the invention has a mobility of 0.073 cm<2> / V.s.

A tandem polymer photovoltaic device includes a first bulk hetero-junction polymer semiconductor layer, a second bulk hetero-junction polymer semiconductor layer spaced apart from the first bulk hetero-junction polymer semiconductor layer, and a metal-semiconductor layer between and in contact with the first and second bulk hetero junction polymer semiconductor layers. The first and second bulk hetero-junction polymer semiconductor layers have complementary photon absorption spectra.

The invention discloses a chirality graphite phase carbon nitride polymer semiconductor photocatalyst as well as a preparation method and applications thereof, and belongs to the technical field of material preparation and photocatalysis. Chirality graphite phase carbon nitride is synthesized by taking cyanamide as a precursor and chirality mesoporous silica as a hard template, and removing the template through heat polymerization. The chirality graphite phase carbon nitride prepared by the invention has a chirality spiral-bar-shaped morphology and a micro-nano structure, shows particular circular dichroism and optical activity by when being compared with traditional body phase carbon nitride, has a great specific surface area and a high optical absorption performance, and shows a favorable optical catalysis hydrogen generating performance under visible light. According to the invention, the chirality graphite phase carbon nitride polymer semiconductor photocatalyst is synthesized; a preparation technology is improved; and the chirality graphite phase carbon nitride polymer semiconductor photocatalyst as well as the preparation method and applications thereof have an important application prospect.

The present invention relates to an AC voltage-driven light emitting device having a single active layer of a core-shell structure (p-i-n structure) in which intrinsic semiconductor nanocrystals, exciton combination centers, are uniformly and isotropically distributed around p-type polymer particles, and n-type small molecular particles surround the semiconductor nanocrystals and p-type polymer, and a manufacturing method thereof. An active layer of a core-shell structure using a polymer-semiconductor nano hybrid in the light-emitting device has an inversion symmetry characteristic showing the same current-voltage characteristic during application of a voltage in a forward direction and a reverse direction. Therefore, due to this inversion symmetry characteristic, the light emitting can be driven by even an AC voltage. Also, since the device can be driven by an AC voltage, limitations of an existing DC voltage-driven organic light emitting diode, that is, destruction or a defect of the device by an overcurrent and generation of a dark spot by degradation of local constituent organic materials are solved.

The present invention relates to a nanocomposite device comprising a polymeric matrix, semiconducting nanoparticles, and a semiconducting molecule having a field-effect mobility of at least 0.1 cm2 / Vs. In addition, the present invention relates to a method of making a nanocomposite device. The method includes providing a mixture comprising a polymer, semiconducting nanoparticles, and a semiconducting molecule having a field-effect mobility of at least 0.1 cm2 / Vs or a soluble precursor thereof, depositing the mixture on a substrate, and treating the mixture under conditions effective to produce a nanocomposite device comprising the polymeric matrix, semiconducting nanoparticles, and the semiconducting molecule having a field-effect mobility of at least 0.1 cm2 / Vs. Thin film devices including the nanocomposite device are also disclosed.

The invention relates to a semiconductor conjugated polymer and a preparation method thereof. The invention discloses a solution-processable polymer semiconductor material and particularly relates to a semiconductor conjugated polymer based on two-dimensional conjugated dibenzothiophene and (2-oxyindole-3-subunit)dibenzofuran-diketone and preparation thereof. The synthesized semiconductor conjugated polymer has wide absorption peak which covers visible light, even extends to a near infrared region; in addition, the synthesized semiconductor conjugated polymer has low lowest unoccupied molecular orbital (LUMO) energy level and can replace fullerene derivative (PCBM) to serve as a photovoltaic receptor material applied to the organic photovoltaic field. The introduced side chain serves as a solubilized alkyl chain. The semiconductor conjugated polymer prepared by the method can be subjected to solution processing, and has a certain application prospect in the organic photovoltaic field.

The invention relates to a method for catalyzing the transfer of a hydrogen controllable reduction nitro-compound in formic acid or formate. Carbon nitride supported nano palladium or polymer semiconductor supported nano metal is used as a catalyst, the formic acid or formate is used as a hydrogen source, the reaction temperature is 0-15 DEG C, and the transfer of hydrogen in the formic acid or formate to a substrate nitro is efficiently catalyzed so as to selectively generate corresponding amine. Compared with the prior art, the method disclosed by the invention has the advantages that the reaction conditions are mild, the substrate conversion rate and product selectivity are high, the catalyst is easy to recover with good circularity, the system is environment-friendly and low in energy consumption, and the method has a vitally important value in industrial application.

The invention discloses a polymer semiconductor material capable of performing solution processing, and in particular relates to a semiconductor conjugated polymer based on (thienyl) diketo-pyrrolo-pyrrole and (2-oxyindole-3-subunit) benzodifuran-diketone and a preparation method of the semiconductor conjugated polymer. The synthesized novel semiconductor conjugated polymer disclosed by the invention has a wide absorption peak, can cover visible light, even can extend to a near-infrared area, also has a low LUMO energy level, and can be used for replacing PCBM to be applied in photovoltaic receptor material application and organic photovoltaic fields. By adopting an introduced side chain as a solubilized alkyl chain, the prepared conjugated semiconductor polymer disclosed by the invention can be subjected to solution processing treatment, and has a certain application prospect in organic thin-film transistor and organic photovoltaic fields.

A polymer comprises a polymeric chain represented by formula (I) or (II). In formula (I), a, b, c, d, and n are integers, a from 0 to 3, b from 1 to 5, c from 1 to 3, d from 1 to 5, and n from 2 to 5000; R1 and R2 are side chains; R3 and R4 are each independently II or a side chain; and when a is 0, R3 and R4 are side chains. In formula (II), a, b, c, d, e, and n are integers, a from 1 to 3, b and c being independently 0 or 1, d and e being independently 1 or 2, and n from 2 to 5000; R1 and R2 are side chains except —COOalkyl; and X1, X2 and X3 are independently O, S, or Se. Semiconductors and devices comprising the polymer are also provided.

The invention provides a compound in a formula (I) structure and a polymer in a formula (II) structure. A preparation method of the polymer in the formula (II) structure provided by the invention is characterized in that under the inert gas protection, the compound in the formula (I) structure and polymerization monomers generate the polymer under the effects of catalysts and auxiliary ligands. The invention also provides an organic thin film transistor and a polymer semiconductor material consisting of the polymer, wherein a charge transmission layer of the organic thin film transistor is made of the polymer semiconductor material. The polymer in the formula (II) structure has a good linear structure, and the conjugate degree of the polymer is improved, so the polymer semiconductor material formed by the polymer is enabled to have a better migration rate. The polymer of the compound based on N and S two-kind heteroatoms provided by the invention has good solubility in organic solvents.

The invention relates to small molecules and polymers which have a linear polycyclic conjugation structure and are condensed together, a synthesis method thereof, and applications thereof as a semiconductor active material on organic filed effect triodes, organic solar energy batteries, and other organic electronic devices. The synthesis method of the compounds with such structure comprises following steps: taking 2,5-dibromo-1,4-diethyl phthalate and condensed heterocyclic conjugation molecules as the primary raw material, then subjecting the primary materials to carry out cross-coupling to form a conjugation molecule intermediate containing four ester groups, then subjecting the ester groups to react with an organic lithium reagent so as to generate an intermediate with four alcohol groups, and finally subjecting the intermediate with four alcohol groups to carry out four ring-closure reactions under the acidic condition so as to obtain a highly-conjugated trapezoid polycyclic structure. The molecules with this structure can directly be used as a molecule type organic semiconductor material and can be used as a monomer synthesis polymer semiconductor material. These materials have an excellent organic solvent solubility, a solution processing property, and a high light, heat, and voltage stability. The organic field effect triode prepared by the materials has a charge transfer rate more than 0.8 cm2 / Vs, and has a potential application prospect on the field of organic electronics.

The invention provides an MDMO-PPV wrapping PbS nanometer material and a preparation method of a solar battery. Aiming at the defects of the prior preparation method of a PbS quantum dot and a nanometer rod, and the shortcomings of other inorganic or organic heterozygote solar batteries. The MDMO-PPV wrapping PbS nanometer material uses polymer semiconductor MDMO-PPV as a wrapping body, prepares the PbS quantum dot and the nanometer rod with opto-electrical application prospect, and has the characteristics of simple operation, low cost and wide range of application. The invention also successfully applies the nanometer rod material to the preparation of the inorganic or organic heterozygote solar batteries.

Embodiments of the invention include methods and materials for preparing organic semiconducting layers, for example one used in an organic semiconductor device including a substrate with a nanostructured surface and a polymeric semiconductor film overlying the nanostructured surface. Aspects of the invention use capillary action to modulate polymer chain self-assembly on a surface and unidirectional alignment at a critical buried interface where charge carriers migrate between a dielectric and the polymer. By controlling the properties of the surfaces upon which polymers are disposed, artisans can enhance the transistor saturated mobilities of conjugated polymers.

Conjugation interrupted polymer semiconductor materials and their preparation and application methods belong to the field of organic photoelectric materials technology, and have potential important applications in the fields of light-emitting diodes, solar cells, phosphorescent host materials, organic electrical storage materials, porous materials, and gas sensing. . The conjugation interrupted polymer semiconductor material of the present invention has the following structure: the material has the advantages of high stability and simple synthesis route. This type of conjugation interrupted hyperbranched polymer semiconductor photoelectric material is prepared by Friedel-Crafts polymerization catalyzed by boron trifluoride ether at room temperature; the raw material is cheap, the operation is simple, the preparation is at normal temperature, and the yield is high.

The invention discloses a two-dimensional conjugated polymer and a preparation method and application thereof and belongs to the field of polymer semiconductor materials. The two-dimensional conjugated polymer uses carbazole as a framework and has the structure (shown in the description) of a chemical formula selected from a general formula (I) or a general formula (II). The preparation method comprises the steps that a carbazole derivative is firstly spin-coated on a flat substrate, then the polymer spin-coated with a monomer is immersed in an organic solvent containing anhydrous ferric chloride, and large-scale ultra-thin conjugated polymer nanosheets are prepared through oxidative polymerization reaction assisted by the substrate. The size of the two-dimensional conjugated polymer reaches centimeter level, and the thickness of the polymer reaches several nanometers. The polymer can stably exist in acid, alkali and water, has absorption peaks in an ultraviolet region, has the advantages of blue light emission and the like and has the very good application prospect in the fields of organic photoelectric detection devices, organic luminescent devices, organic electrical storage, organic field effect transistors, organic sensors, organic nano devices and separating filter membranes and the like.

The invention provides a friction power generator employing a semiconductor composite material. The friction power generator comprises a first electrode layer, a first polymer material layer and a second electrode layer, which are laminated, wherein a material for the first polymer material layer is a metal-doped polymer semiconductor composite material. According to the friction power generator, an insulating polymer is doped with metal particles, so that the resistivity of the polymer is reduced, and the volume resistivity of the polymer is at a level between the volume resistivity of metal and the volume resistivity of an insulating material. According to the friction power generator, the working internal resistance of the power generator can be effectively reduced, and the load capacity of the friction power generator can be improved within a certain range.

A transistor structure comprises a patterned N-type transparent oxide semiconductor formed over a substrate as a base, and a patterned p-type organic polymer semiconductor formed on the patterned N-type transparent oxide semiconductor comprising a first portion and a second portion so that the patterned N-type transparent oxide semiconductor and the first portion and the second portion of the patterned p-type organic polymer semiconductor form heterojunctions therebetween respectively, wherein the first portion of the patterned p-type organic polymer semiconductor is used as an emitter, and the second portion of the patterned p-type organic polymer semiconductor is used as a collector.

The invention discloses an ultrathin film and a preparation method of an organic field-effect transistor sensor based on the ultrathin film. The preparation method is characterized by comprising the following steps: blending a polymer semiconductor material and a polymer insulating material in an organic solvent, and performing spin-coating to form a double-layer film; dissolving to remove the polymer insulating material film by adopting a good solvent, and obtaining the ultrathin film of the polymer semiconductor material; evaporating an electrode on the film, thereby obtaining the organic field-effect transistor sensor. The ultrathin film disclosed by the invention has the advantages of simple operation, high repeatability, low requirements on equipment and process conditions, no need of large precise instruments and equipment and the like; because the active layer has ultrathin thickness, the obtained sensor in the invention has the advantages of high sensitivity, high selectivity, low detection limit and the like, and has an important application prospect in the aspect of improving the sensing property of a gas sensor.

The invention discloses conjugated polymer semiconductor materials based on thienoarylindole unit and a preparation method thereof, and application of the conjugated polymer semiconductor materials in high-efficiency polymer solar cells. The structure is disclosed as general formula (I), wherein Ar represents aryl group, substituted aryl group, heterocyclic aryl group or substituted heterocyclic aryl group; R can be a straight-chain alkyl group or branched alkyl group; E represents carbon atom, nitrogen atom, silicon atom or the like; and A represents an electron-deficient receptor unit, and is generally an electron-deficient conjugated aryl group. The semiconductor materials disclosed by the invention have the advantages of favorable solubility, favorable heat stability, favorable film formation property, higher migration rate and high polymer solar cell photoelectric conversion efficiency (up to 5.83%). The thienoarylindole unit and derivative materials thereof obtained by the preparation method are hopeful to be widely used in the fields of organic solar cells, organic field-effect transistors and other photoelectric semiconductor devices.

The invention discloses a fluorene polymer with a crosslinkable group, a crosslinked film and a preparation method thereof, and relates to the field of preparation technology and application of organic semiconductor materials. The fluorene polymer has a molecular weight of 10,000 to 50,000; a C-9 position of fluorene contains allyl; and a molar ratio of a crosslinkable unit in the polymer can be adjusted. The preparation method for the crosslinked film is performed according to two conditions, namely, a crosslinkable polymer with allyl crosslinkable group can be crosslinked under the initiation of ultraviolet rays; and a polymer semiconductor without the crosslinkable group is mixed with the crosslinkable fluorene homopolymer serving as a crosslinking agent to be crosslinked through photo-initiation. The molar ratio of the crosslinkable unit in the prepared polymer can be adjusted. Compared with other crosslinkable luminous polymers, the fluorene polymer is simple in preparation and high in crosslinking speed, and has no influence on main luminous performance of the crosslinked luminous polymers.

A method for implementing electronic circuit modules on elongated structures of semiconducting materials such as carbon nanotubes, graphene nanoribbons, elongated structures of semiconducting polymers or organic semiconductors, other related materials, and printed electronics strip structures is disclosed. The method provides that a plurality of modules can be implemented on distinct adjacent portions of the same elongated structure of semiconducting materials. In powering the modules, each circuit comprises a chain of electronic components arranged so that each end of the chain can function as a power supply terminal. Larger electronic circuit modules can be created from smaller module, and. such a modular hierarchy may be extended to an arbitrary number of levels. In a Computer Aided Design (CAD) applications for nanoelectronics and printed electronics, designs for hierarchies electronic circuit modules can be stored and retrieved from one or more a libraries of circuit designs.

The invention belongs to the field of polymer semiconductor materials, and discloses a polymer semiconductor containing a bipyridine diazole derivative receptor and a preparation method and application thereof. A structure of the polymer semiconductor is shown in a formula (I), and the preparation method comprises the following steps: (1) reacting 2-tributyltin-4-alkylthiophene with a dibromobenzimidazole derivative to prepare an intermediate a; (2) reacting the compound a with a bis-butyltin b to obtain a compound c; (3) performing a reaction on the compound c and N-bromosuccinimide to obtainM1; and (4) performing a palladium-catalyzed coupling reaction on the M1 and (E)-bis1,2-(tri-n-butyltin)ethylene to obtain the final product. According to the invention, the synthetic route is simpleand high-efficiency, the raw materials are easy to obtain, the costs are low, the universality is high and the repeatability is good, and a field effect transistor prepared by using the polymer semiconductor as an active layer obtains outstanding bipolar transmission characteristics, and has wide market prospects.