29 results about "Polymer semiconductor" patented technology

The utility model discloses equipment for treating sewage containing high-molecular compounds by utilizing a photocatalysis technology, which comprises an intelligent power supply cabinet, a control system and a reactor equipment unit module, a photocatalysis reactor is arranged in a cabinet body of the reactor equipment unit module, a plurality of photocatalysis units are arranged in the photocatalysis reactor, and the photocatalysis units are connected with the intelligent power supply cabinet. Each photocatalytic unit comprises a plurality of photocatalytic tubes which are mounted in parallel, a photocatalytic coating is arranged on the outer surface layer of each photocatalytic tube and adopts a polymer semiconductor g-C3N4 coating, and the reactor equipment unit modules can be randomly matched and combined according to the sewage treatment capacity. All reactor equipment unit modules are connected with the control system. The whole set of equipment is simple and convenient to operate, small in occupied area, low in energy consumption, good in treatment effect, high in intelligent degree and extremely high in modularization degree, can be randomly matched and combined according to the sewage treatment capacity, does not need human participation, and saves the labor cost.

The invention relates to the field of research, development and application of novel semiconductor sensing equipment, in particular to a carbon-based sensing system based on a high-integration narrow-band imaging array and a construction method of the carbon-based sensing system. According to the invention, the carbon-based photoelectric sensing array is prepared by a liquid phase method and a transfer method with high uniformity and expandability, and a carbon-based sensing system is constructed on the basis of the carbon-based photoelectric sensing array; the carbon-based sensing system comprises a multi-pixel carbon-based sensing array based on conjugated polymer / semiconducting carbon nanotubes / metallic carbon nanotubes, an electrical readout system and an optical focusing assembly. The 4096-pixel integrated photoelectric sensing array and the carbon-based sensing system constructed by the 4096-pixel integrated photoelectric sensing array are prepared by a whole set of optimized liquid phase deposition, spin coating and transfer processes for the first time, and the system has quick response and high photoelectric response capability and can realize high-integration-level and high-performance optical signal detection and high-quality imaging functions.

This invention relates to the fields of organic synthesis and organic electronics, particularly to cyanobutadiene derivatives and their preparation methods and applications, and polymer semiconductor materials and their preparation methods and applications. The cyanobutadiene derivatives have the following general structural formula (1) or (2): This invention develops a series of cyanobutadiene derivative-based electron-deficient building blocks with simple structures, strong electron-withdrawing capabilities, and easy synthesis. These electron-deficient building blocks can be used as acceptor units in the development of organic photovoltaic, organic thermoelectric, and organic field-effect transistor materials.

The application belongs to the technical field of organic electrochemical transistors, and discloses a p-type organic electrochemical transistor biosensor, a preparation method and application. The sensor comprises a first substrate and a second substrate. A source electrode is arranged on one side of the first substrate. A polymer semiconductor channel is arranged on the source electrode. A drain electrode is arranged on the polymer semiconductor channel. A first floating gate is arranged on the other side of the first substrate. The first substrate, the drain electrode and the first floating gate are covered with a first electrolyte layer. A gate electrode is arranged on one side of the second substrate. A gate modification layer is arranged on the gate electrode. A second floating gate is arranged on the other side of the second substrate. The second substrate, the gate modification layer and the second floating gate are covered with a second electrolyte layer. The first floating gate and the second floating gate are connected through a wire. The application realizes the detection of an ultralow concentration (10 ‑20 mol / L) H1N1 virus marker and realizes the detection of 10 ‑17 mol / L H1N1 virus marker in an ultrashort time.

The application belongs to the technical field of organic semiconductor materials, and particularly relates to an intrinsic low-melting-point polymer semiconductor material and a preparation method and application thereof. The polymer semiconductor material is a pyrrolopyrroloquinoline intrinsic low-melting-point polymer with a macrocyclic crown ether as a side chain. The application reduces the melting point of an existing organic polymer by introducing the macrocyclic crown ether into the side chain. The polymer provided by the application can be used to obtain a high-orientation semiconductor thin film through a melt friction transfer method, and the semiconductor thin film can be used as an organic semiconductor layer in an organic field effect transistor to obtain a new organic field effect transistor. The carrier mobility of the organic field effect transistor is improved by regulating a molecular packing mode. The application provides a feasible method for solvent-free processing of an organic field effect transistor device, which will help to solve the environmental pollution problem caused by traditional solution processing using a chlorinated solvent.

The application discloses a small-molecule photo-crosslinking agent, a preparation method and application thereof, and belongs to the field of organic semiconductors. The structural formula of the small-molecule photo-crosslinking agent is shown as formula I: the preparation method comprises the following steps: reducing aldehyde groups in tri(4-formylphenyl)amine into benzyl alcohol to generate tribenzyl alcohol amine; under alkaline conditions, hydroxyl groups in the tribenzyl alcohol amine are converted into azide groups through a nucleophilic aromatic substitution reaction to generate a compound shown as formula I. The small-molecule photo-crosslinking agent has UV photo-crosslinking characteristics, can be used for ultraviolet photoetching patterning of solution-processed polymer semiconductors, is simple to synthesize, safe and efficient, and has the potential for large-scale production.

The invention provides a cyanation quinoxaline-based n-type polymer semiconductor material and a preparation method and application thereof, and the cyanation quinoxaline-based n-type polymer semiconductor material has a chemical structural general formula as follows: in the n-type polymer semiconductor material, quinoxaline is used as a matrix and has good solubility and a planar skeleton structure, and the structural formula is shown in the specification. The introduction of the cyano group significantly reduces the electricity shortage of the quinoxaline, so that the prepared n-type polymer semiconductor material has lower molecular front track energy level and more excellent photoelectric properties, thereby showing excellent application potential in the fields of organic field effect transistors, organic thermoelectricity or organic solar cells and the like.

The application discloses a stretchable high-energy light detector based on a perovskite quantum dot film. The detector comprises, from bottom to top, a stretchable substrate, a stretchable gate electrode, a stretchable insulating layer, a stretchable polymer semiconductor layer, a stretchable van der waals heterojunction source-drain electrode and a photosensitive layer. The stretchable high-energy light detector is of a bottom gate top contact structure, and the photosensitive layer is made of perovskite quantum dots with high absorption efficiency, high photoluminescence quantum efficiency and long exciton diffusion length. The application proposes a strategy of surface energy-induced self-assembly of perovskite quantum dots, prepares a uniform, compactly arranged, easily transferred and flexible worm-like perovskite quantum dot film, and realizes the application of a high-crystalline granular perovskite quantum dot film in a stretchable photoelectric detector.

The invention belongs to the technical field of preparation of polymer semiconductor materials, and particularly discloses a method for preparing a polyheptylimide photocatalyst by using organic and inorganic mixed molten salt, which comprises the following steps of: mixing high-nitrogen small organic molecules serving as a raw material with organic molten salt and inorganic molten salt in a vacuum glove box to prepare a precursor; and then carrying out high-temperature solid-phase polymerization in an inert atmosphere, washing and drying to obtain the target polyheptazinyl imide catalyst. The organic-inorganic mixed molten salt system is adopted to replace traditional pure inorganic molten salt, directional synthesis of polyheptylimide is promoted through mixed molten salt microenvironment regulation and control, the carrier transport resistance is effectively reduced, and photo-induced electron-hole recombination is inhibited. The prepared polyheptylimide has excellent photocatalytic oxidation performance, can realize H2O2 preparation through O2 activation and organic dye mineralization under visible light driving, has the advantages of simple process, low cost and good stability, is convenient for large-scale production and practical application, and has important value in the fields of energy conversion and environmental governance.

The invention relates to the technical field of electronic information, in particular to a preparation method of an N-type polymer transistor based on an electrolyte gate dielectric. Comprising the following steps: preparing a semiconductor solution and a gate medium solution, wherein the gate medium solution is prepared by jointly dissolving a polyvinylidene fluoride-trifluoroethylene copolymer P (VDF-co-TrFE), an ionic liquid and a polymer matrix in a solvent; a source electrode and a drain electrode are manufactured on a substrate by using gold metal particles in a thermal evaporation mode. And spin-coating a semiconductor solution on the substrate, and performing annealing treatment to form a polymer semiconductor layer. And spin-coating a gate dielectric solution on the semiconductor layer, and performing annealing treatment to form a solid electrolyte gate dielectric layer. And preparing an aluminum gate electrode by thermal evaporation to obtain the N-type polymer transistor based on the electrolyte gate dielectric. According to the method, the working voltage of the device can be greatly reduced, the performance of the device is improved, the short-range memory characteristic is shown, and the method has the advantages of being simple in process, high in stability and low in cost.

The application discloses a bipolar polymer semiconductor material containing difluoro-substituted indathrene and a preparation method and application thereof. N The copolymerization of the obtained copolymer monomer and 5,5'- (bistrimethyltinyl) -2,2'-dithiophene or (E) -1,2- (5- (bistrimethyltinyl) -thiophene-2-yl) ethylene, a centrosymmetric monomer, through a bromination reaction of bromo-succinimide to obtain a novel bipolar polymer semiconductor material containing difluoro-substituted indathrene with a D-A configuration. The synthesis route of the application is simple and efficient, raw materials are easy to obtain, the cost is low, the universality is high, and the repeatability is good. The material has the advantages of good solubility, excellent thermal stability and strong absorption spectrum range. The bipolar polymer semiconductor material prepared by the application is used as an active layer material, and an organic field effect transistor device prepared by the application has excellent electrical performance. The material has broad commercial prospects in organic thermoelectricity, organic field effect transistors, organic logic complementary circuits and other optoelectronic devices.

The invention discloses a method for constructing and reinforcing a hybrid biological membrane system composed of methane bacteria / carbon nitride. According to the method, a hybrid system composed of methanogens and an extracellular polymeric substance (EPS) semiconductor material (modified graphite-phase carbon nitride) is constructed, and the hybrid system is used for preparing the carbon nitride-modified graphite-phase carbon nitride hybrid system. The carbon nitride-modified graphite-phase carbon nitride hybrid system has the advantages that the carbon nitride-modified graphite-phase carbon nitride hybrid system is used for preparing the carbon nitride-modified graphite-phase carbon nitride hybrid system, and the carbon nitride-modified graphite-phase carbon nitride hybrid system; the extracellular polymeric substance in the biological membrane obviously improves the light energy utilization efficiency and the operation stability of the system; nano conductive particles are introduced to the surfaces of methane bacteria cells, so that the utilization rate of extracellular electrons by the cells is improved. The method effectively solves the problems of low efficiency, high energy consumption, low product selectivity and the like in the process of reducing carbon dioxide into methane in a traditional biological hybrid system, and has the advantages of simple and convenient process, low energy consumption and high product selectivity.

The invention belongs to the field of organic photoelectricity, and discloses a preparation method and application of an anchoring self-assembly polymer semiconductor transmission layer material containing a crosslinking unit. The chemical structural formula of the anchoring self-assembly polymer semiconductor transmission layer material containing the cross-linking unit meets the general formula of the following formula 1 or formula 2, Ar1, Ar2 and Ar3 units are common aromatic ring units or heteroaromatic ring units, B2, B3 and common alkyl chain or alkoxy chain units, A2 is a common acid unit, linker is a cross-linkable group, the polymerization degree n is 5-300, x, y and z represent repetitive units, and n is a positive integer. 0 < x < 1, 0 < y < 1, 0 < z < 1, and x + y + z = 1. According to the invention, the cross-linking unit is introduced, so that the optimal form can be locked in a cross-linking network after being formed, and the optimal state can be kept in subsequent processing, device working and long-term use, so that the aging performance and environmental stability of the polymer photovoltaic device can be improved.

The application discloses a stretchable organic X-ray photodetector based on a polymer semiconductor thin film, and particularly relates to a method for regulating and controlling self-assembly of a polymer blend thin film, and a high-sensitivity direct stretchable X-ray photodetector based on a polymer. The application proposes a strategy of eccentric spin coating for inducing self-assembly of a blend film, and a stretchable polymer thin film with nano confinement is prepared, and effective control of a nano morphology of a photoelectric material is realized. Based on the nano confinement thin film, the prepared stretchable X-ray photodetector not only has the X-ray detection capability of high sensitivity, fast response and low dose, but also has high light transmittance, high stretchability and fatigue resistance. Meanwhile, the application has unique advantages of low cost, large area and high flexibility, can be directly attached to a complex surface or structure of a living body, and thus high-definition detection results can be obtained in a lower radiation dose and a very short time, which has important significance in the fields of safety inspection and precision medical treatment.

The invention discloses an AI regulation and control high-frequency artificial nerve device based on homogeneous integrated OECT. The AI regulation and control high-frequency artificial nerve device comprises a receptor module, a neuron module and a synaptic module which are integrated on the same flexible polyimide substrate. The receptor module is used for collecting and converting optical, electric and chemical signals; the neuron module is used for signal amplification and logic processing; the synaptic module is used for signal storage and synaptic plasticity simulation. Core devices adopted by the three modules are OECTs manufactured through the same manufacturing method, a vertical stacking framework is adopted in the manufacturing process, a polymer semiconductor electron transport layer-gradient ion conductor transport layer bicontinuous network is constructed, and transmission efficiency matching is achieved through path separation and collaborative optimization. According to the artificial nerve device, high-sensitivity response of multi-mode signals is achieved, the sensing-processing-memorizing integrated function is completed, and the requirements of medical scenes such as neural restoration for biocompatibility and long-term working stability are met.

This invention belongs to the field of electronic device technology and discloses a light-assisted self-destructing electronic device and its fabrication method. The light-assisted self-destructing electronic device comprises, from bottom to top, a Si / SiO2 wafer, an organic polymer semiconductor layer, and a metal electrode layer; the organic polymer semiconductor layer comprises a blend of P3HT and N2200, and the metal electrode layer comprises a source and a drain. This invention achieves bipolar modulation by using a P3HT / N2200 blend as a bipolar polymer material, exhibiting advantages in multi-carrier modulation and photoresponse characteristics. It allows control of information visibility by adjusting light exposure; information can be read when light is applied and erased when light is removed, achieving self-destruction and enhancing information security. The light-assisted self-destructing electronic device of this invention has a simple structural design, balanced electron-hole transport characteristics, a high on / off ratio, and excellent synaptic characteristics.

The invention relates to the technical field of electronic information, in particular to a preparation method of an N-type polymer transistor based on a titanium / aluminum / titanium laminated contact electrode. Comprising the following steps: preparing a semiconductor solution and a gate medium solution, wherein the gate medium solution is prepared by dissolving n-butyl acrylate in a solvent; a source electrode and a drain electrode are prepared by laminating titanium, aluminum and titanium metal particles on a substrate in a vacuum evaporation manner. And performing annealing treatment on the spin-coated semiconductor solution to form a polymer semiconductor layer, and performing annealing treatment on the spin-coated gate dielectric solution to form a polymer gate dielectric layer. And then preparing an aluminum gate electrode by thermal evaporation to obtain a target transistor. According to the method, bipolar transport of the donor-acceptor (bipolar) copolymer field effect transistor can be changed into unipolar transport, off-state current is reduced, the performance of the N-type polymer transistor is improved, meanwhile, cost is reduced, and conditions are created for achieving a complementary circuit.

The application discloses a high-safety solid-state lithium metal battery, which comprises a negative electrode, a solid-state electrolyte and a positive electrode, and further comprises a hetero-interface layer between the negative electrode and the solid-state electrolyte, wherein the hetero-interface layer is a double-layer composite structure composed of a passivation layer and a polymer / semiconductor, and the passivation layer is at least one of a nitride layer, an oxide layer, a nitrogen chemical layer, a carbon-based layer, a phosphate layer, a fluoride layer and a metal-based protective layer. By introducing the hetero-interface layer between the lithium metal negative electrode and the solid-state electrolyte, the physical contact between the lithium metal negative electrode and the solid-state electrolyte can be effectively improved, the growth of lithium dendrites is prevented, the interface reaction between the lithium metal and the solid-state electrolyte is reduced, the problem of thermal runaway fire combustion under high temperature is effectively inhibited, and the stability, safety and cycle performance of the solid-state lithium metal battery under room temperature and high temperature are enhanced.

The invention discloses a polymer semiconductor material with a controllable open-loop side chain and a preparation method and application thereof, the structural formula of the polymer semiconductor material is shown in the specification, the polymer semiconductor material is prepared through a Stille coupling reaction according to the preparation method, and the polymer semiconductor material can be used as an intrinsic stretchable organic semiconductor material.

The invention belongs to the technical field of organic semiconductor materials, and particularly relates to a polymer semiconductor material with stable photoetching as well as a preparation method and application thereof. The polymer semiconductor material disclosed by the invention is a D-A type copolymer PFIDTO-BSe, and the structure of the polymer semiconductor material comprises a biselenophen donor unit and a difluoro indacenone receptor unit. The material has excellent ultraviolet stability: the mobility retention rate gt after irradiation of 365 nm; the solvent resistance is good, and the migration rate retention rate gt is obtained after NMP soaking is conducted for 1000 minutes; 95%. Carrying out Stille coupling to synthesize a polymer; and further preparing an organic field effect transistor array by adopting a photoetching process, namely spin-coating a semiconductor film on the modified substrate, depositing photoresist and patterning, and stripping the photoresist after evaporating a source electrode and a drain electrode. The polymer semiconductor material is compatible with a photoetching process, so that 7-micron channel precision patterning is realized, and the transistor array yield is gt; the method is suitable for manufacturing flexible integrated circuits.

The invention discloses application of a C-H sigma bond compound as a light-activated n-type dopant in semiconductors, and belongs to the field of semiconductor functional materials and the field of organic electronics. As a high-stability, photo-activatable and efficient n-type dopant, the C-H sigma bond compound can realize efficient doping of semiconductor materials such as small organic molecule semiconductors, conjugated polymer semiconductors, carbon nanotubes, two-dimensional semiconductors and the like. Meanwhile, the n-type dopant can be compatible with a high-precision ultraviolet exposure technology, and regioselective doping of a semiconductor material is achieved. When the C-H sigma bond compound is used as an n-type dopant to be applied to electronic devices based on semiconductor materials, such as thin film transistors, thermoelectric devices, solar cells and light-emitting diodes, the bulk phase and interface defects of the semiconductor materials can be eliminated, the carrier concentration of the materials can be regulated and controlled, the electrical performance of small-size devices can be remarkably improved, and the performance of the devices can be improved. Therefore, miniaturization and integration of the device are realized.

The present application relates to the technical field of organic polymer and organic optoelectronic material, in particular to acceptor unit based on oxygen boron nitrogen coordination, n-type polymer and its preparation and application. The present application prepares acceptor unit with strong electron-withdrawing property through Schiff base boron nitrogen coordination reaction, bromination reaction and coupling reaction, and prepares conjugated polymer with lower LUMO energy level through polymerization reaction. Further, by taking the polymer as an organic semiconductor layer, an organic field effect transistor and an organic thermoelectric material with higher electron mobility and power factor are prepared. The present application realizes efficient synthesis of electron-deficient acceptor and preparation of high electron mobility polymer, promotes the application of n-type polymer semiconductor material in the field of flexible, printing and wearable electronics, and has important significance for realizing industrialization of organic optoelectronic devices.

The application belongs to the field of polymer semiconductor materials, and discloses a polymer semiconductor material containing benzene or pyridine acetylene group triphenylamine and a hole transport material formed by cross-linking of the polymer semiconductor material and applications. The polymer semiconductor material has the structure shown in the following formula (I) or formula (II), and the polymer semiconductor material can be subjected to a "sulfhydryl-alkyne" click chemistry reaction with a small molecule containing sulfhydryl to obtain a cross-linked polymer hole transport material. The polymer semiconductor material has a relatively suitable HOMO energy level, and through the "sulfhydryl-alkyne" click chemistry reaction with a small molecule containing sulfhydryl cross-linking agent, a relatively low cross-linking temperature and a relatively high hole mobility can be achieved, and the polymer semiconductor material has a broad commercial prospect in the fields of optoelectronic semiconductor materials such as organic light-emitting diodes, organic solar cells, organic field effect transistors and perovskite solar cells.

The invention relates to a stretchable panel and an electronic device. The stretchable panel comprises a stretchable substrate and a strain sensor on the stretchable substrate, and the strain sensor comprises a first gate electrode; a first polymer semiconductor layer overlapping the first gate electrode in a thickness direction of the stretchable substrate and including a polymer chain of the first polymer semiconductor layer; and a first source electrode and a first drain electrode electrically connected to the first polymer semiconductor layer and facing each other with the first polymer semiconductor layer interposed therebetween, a polymer chain of the first polymer semiconductor layer is oriented so as to intersect a first channel length direction extending from the first source electrode to the first drain electrode.

The invention discloses a high-molecular semiconductor long-life lead-acid battery positive grid and a preparation method and application thereof, and relates to the technical field of lead-acid battery positive grids, a high-molecular polymer positive coefficient temperature material PPTC is adopted as a positive grid material, and the conductivity and corrosion resistance of the grid can be improved, so that the service life of a battery is prolonged, and the service life of the battery is prolonged. The polymer semiconductor PPTC positive grid is suitable for a net energy floating charging battery and a deep floating charging battery.

A semiconductor package includes a redistribution structure including a wiring structure and an insulating structure covering the wiring structure, the redistribution structure having a first surface and a second surface, which are opposite to each other, the insulating structure including a polymer, a semiconductor chip on the first surface, the semiconductor chip being connected to at least one first wiring pattern in the wiring structure, a passivation insulating film covering the second surface, the passivation insulating film including an inner surface contacting the insulating structure and a hole sidewall defining a hole, the passivation insulating film including an inorganic insulating material, a conductive pad passing through the passivation insulating film via the hole and contacting the second wiring pattern, the conductive pad having a pad sidewall contacting the hole sidewall, and an external connection terminal on the conductive pad.

The application discloses a quinoid terpolymer which can be processed by an environment-friendly solvent and preparation and application thereof. The structure of the terpolymer is as follows: wherein m:n=75:27. The quinoid terpolymer belongs to a novel polymer, and has the advantages of simple preparation process, high industrial implementation and high yield. When the quinoid terpolymer is applied as a polymer semiconductor, the quinoid terpolymer can be processed by an environment-friendly solvent, and has a hole mobility as high as 2.09 cm 2 V –1 s –1 ​

The invention discloses a photocatalyst for degrading pollutants and a preparation method thereof, and belongs to the technical field of catalysts, the photocatalyst comprises graphite phase carbon nitride and nitrogen-doped titanium dioxide; graphite-phase carbon nitride is a polymer semiconductor of a graphene-like layered structure formed by sp2 hybridization of carbon and nitrogen atoms, and the basic structural unit is a tri-s-triazine ring or a triazine ring; the nitrogen-doped titanium dioxide is in crystal lattices of TiO2, and part of oxygen atoms are replaced by nitrogen atoms to form a doped structure; the mass ratio of the graphite-phase carbon nitride to the nitrogen-doped titanium dioxide is (2: 8)-(7: 3). A compact Z-type heterojunction between nitrogen-doped titanium dioxide and graphite-phase carbon nitride is successfully constructed through a hydrothermal-calcination two-step method; the structure can drive photo-induced electrons to be transferred from a conduction band of nitrogen-doped titanium dioxide to a valence band of graphite-phase carbon nitride and compounded with holes, so that efficient spatial separation of carriers is realized, and meanwhile, the strongest oxidation-reduction capability of a catalyst system is maintained.

The invention discloses a preparation device and a preparation method of a dielectric-active integrated super-stretching transistor, and belongs to the technical field of advanced manufacturing. The device comprises a high-voltage power supply, two micro-injection pumps, a coaxial spray head and an X-axis and Y-axis movement module. The preparation method comprises the following steps: firstly, sequentially preparing the hydrophobic layer, the source-drain electrode, the dielectric layer, the grid electrode and the substrate on the substrate, and then stripping and reversing to form a to-be-jet-printed sample; then, a coaxial electrofluid jet printing technology is utilized to enable a polymer semiconductor functional layer material and a high-viscosity packaging layer material to form coaxial jet flow, and a winding wrapping structure is directly printed on the sample; and finally, standing and curing to enable the functional layer to be in contact with the source and drain electrodes to form a conductive path. The core of the invention lies in that the micro-nano patterning and in-situ packaging of the semiconductor layer are realized at one time through coaxial jet printing, the packaging layer, the dielectric layer and the substrate are made of the same material, a sandwich structure without interface stress is formed, the tensile strain capacity (up to 200%), the air stability and the preparation success rate of the device are greatly improved, and the manufacturing cost is reduced. The technical bottlenecks of transfer printing damage, patterning difficulty, interface problems, environmental sensitivity and the like in the traditional process are solved.