21 results about "Organic electronics" patented technology

The invention belongs to the technical field of organic electronics, and provides a compound, a mixture and a composition for further improving the performance of an organic EL device, and the organic EL device with further improved device performance. The compound has a structure as shown in a formula (1), has an asymmetric structure, can inhibit molecular aggregation and reduce exciton quenching, and shows a high triplet state energy level. The driving voltage of the prepared organic electronic device is reduced, and the luminous efficiency is obviously improved. In addition, the compound provided by the invention also has relatively high thermal stability and contains a certain content of deuterium atoms, so that the service life of the organic electronic device is prolonged. The organic electronic device can be applied to the fields of display and illumination.

This invention relates to the fields of organic synthesis and organic electronics, particularly to cyanobutadiene derivatives and their preparation methods and applications, and polymer semiconductor materials and their preparation methods and applications. The cyanobutadiene derivatives have the following general structural formula (1) or (2): This invention develops a series of cyanobutadiene derivative-based electron-deficient building blocks with simple structures, strong electron-withdrawing capabilities, and easy synthesis. These electron-deficient building blocks can be used as acceptor units in the development of organic photovoltaic, organic thermoelectric, and organic field-effect transistor materials.

The application discloses a nerve synapse biomimetic photoelectric slowly-varying memristor and a preparation method thereof, and belongs to the field of organic electronics and photoelectric information technology. The device structure of the slowly-varying memristor is a cross structure, and comprises a bottom electrode, a functional layer and a top electrode from bottom to top on a conductive glass. The functional layer is a poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] MEH-PPV layer. The bottom electrode is indium tin oxide ITO, and the top electrode is Ag. The MEH-PPV layer is a continuous and smooth amorphous thin film. The MEH-PPV layer is prepared by a solution spin coating method, and has the advantages of good sustainability, good solubility, simple preparation, excellent photoelectric performance and the like. The prepared nerve synapse biomimetic photoelectric slowly-varying memristor can perform various nerve morphological simulation and has different responses to light with different wavelengths and different intensities. The application has low cost, good repeatability and can be used in an artificial nerve morphological computing system, and provides more possibilities for constructing a visual perception system.

The invention belongs to the technical field of organic electronics, and discloses a preparation method of an indanone-based photoresponse organic molecule and application of the indanone-based photoresponse organic molecule in the field of organic single-molecule wires. The indanone-based photo-responsive organic molecule has a structure shown as I-II as shown in the specification, and through-bond coupling (TBC) and through-space coupling (TSC) channels of the indanone-based photo-responsive organic molecule can be regulated and controlled through molecular structure engineering. By means of introducing electron donating / withdrawing groups into molecules, adjusting the length of a pi-conjugated chain, introducing steric hindrance and the like, the molecules are subjected to reversible photoisomerization under ultraviolet irradiation, and meanwhile, adjustment of a charge transfer channel can be realized at a single molecule level. The preparation method is simple and applicable, and has a good application prospect in the field of organic monomolecular wires.

A process for producing nanoclusters of silicon and / or germanium exhibiting a permanent magnetic and / or electric dipole moment for adjusting the work function of materials, for micro- and nano-electronics, for telecommunications, for “nano-ovens”, for organic electronics, for photoelectric devices, for catalytic reactions and for fractionation of water.

The present invention relates to electronically doped semiconductor materials and electronic components comprising cerium-ethylenediamine ketone-type and cerium-salen-type composites. The present invention also relates to the use of the cerium-ethylenediamine ketone-type and cerium-salen-type composites as electron acceptors, particularly as p-dopants and electron transport materials in organic electronic components. Furthermore, the present invention relates to novel cerium-ethylenediamine ketone-type and cerium-salen-type composites.

An organic electronics material includes a charge transport polymer which has a branched structure, includes a trivalent structural unit represented by formula (a) below, and a divalent structural unit represented by formula (b) below, has a structure represented by formula (I) and is formed through a direct bonding of at least one bonding site in the trivalent structural unit and at least one bonding site in the divalent structural unit, and has a weight average molecular weight of 2,000 to 500,000. In the formulas, Ar' represents a trivalent organic group derived from an aromatic hydrocarbon or aromatic heterocycle of 2 to 30 carbon atoms, or triarylamine, Ar2 represents a monovalent organic group derived from an aromatic hydrocarbon of 6 to 30 carbon atoms which has an electron-withdrawing group or an electron-donating group, and * represents a bonding site with another structure.

The present invention relates to compounds of formula (I) as well as to their use as organic doping agent, as transport layer, as hole injection layer, as organic semiconductor itself, or as hole transport layer. The invention also relates to organic semiconductive materials, electronic components, semiconductor units, and doped semiconductor layers comprising the compounds of formula (I) as well as to a method to produce such a doped semiconductor layer.

The present invention relates to an electronic component comprising a cerium IV complex, a doped semi-conductor matrix material comprising the cerium IV complex and at least one electron donor, the use of the cerium IV complex, especially as an organic semi-conductor, as a dopant in organic semiconductor matrix materials and as a charge injector in a charge injection layer, and new cerium IV complexes.

The invention discloses a single-channel vertical complementary amplifying circuit based on an organic electrochemical transistor and a preparation method of the single-channel vertical complementary amplifying circuit, and belongs to the technical field of organic electronics. The single-channel vertical complementary amplification circuit based on the organic electrochemical transistor comprises a substrate, a bottom electrode, a single-component bipolar semiconductor channel layer, a top electrode VDD, a top electrode VSS and a packaging layer from bottom to top, wherein the top electrode, the bottom electrode and the semiconductor channel layer are vertically and oppositely arranged. According to the single-channel vertical complementary amplification circuit provided by the invention, the n / p type conductive function is integrated through the single-component bipolar semiconductor material, a vertical stacking framework is matched, multiple precise photoetching steps are omitted, function stability can be guaranteed without designing a complex alignment structure and additionally optimizing process parameters, the preparation process is greatly simplified, the equipment cost is reduced, and the production efficiency is improved. The mass production yield is obviously improved, and the method has a wide application prospect.

The present invention relates to hydroxyamino phosphinic acid derivatives of formula Iin which the occurring groups and parameters have the meanings defined in claim 1, to a method for their preparation and to their use for the fabrication of self-assembled monolayers (SAM), in particular for the fabrication of switchable SAM for electronic devices. The invention further relates to electronic devices comprising said SAM, preferably in the field of organic electronics, in particular for use in memory, sensors, furthermore in organic light-emitting diodes (OLEDs), photovoltaics (OPVs), field-effect transistors (OFETs) and Josephson junctions, very particularly in memristive components such as memristive crossbar-arrays.

Described herein are non-aqueous ink compositions comprising a polythiophene having repeating units conforming to Formula (I) as described below, one or more metalloid nanoparticles, and a liquid carrier having one or more organic solvents. The invention also relates to the use of the non-aqueous ink composition, for example, in organic electronic devices. In formula (I), R1 and R2 are each independently H, alkyl, fluoroalkyl, alkoxy, aryloxy or-O-[Z-O] p-Re; wherein Z is an optionally halogenated alkylene group, p is equal to or greater than 1, and Re is hydrogen, alkyl, fluoroalkyl or aryl. (I)

This invention discloses a stretchable conductive composite film, its preparation method, and its applications, belonging to the fields of stretchable organic electronics and temperature sensing technology. The preparation method involves uniformly dispersing pyrrole monomers into a polyurethane matrix via an air / glycerol interface assembly method, followed by chemical oxidation synthesis. The pyrrole monomers undergo oxidative polymerization between polyurethane molecular chains, resulting in the growth and entanglement of the synthesized polypyrrole polymer chains within the polyurethane molecular chains, forming a stretchable conductive composite film with a polyurethane / polypyrrole interpenetrating network structure. The polypyrrole and polyurethane interpenetrating network structure of this invention ensures that the conductive pathway of the stretchable temperature sensor is not significantly disrupted under tensile and other strain conditions. Therefore, the stretchable temperature sensor of this invention exhibits strain-insensitive temperature sensing performance, maintaining stable temperature sensing performance under both tensile and bending deformations.

The application discloses a low-voltage and low-leakage organic field effect transistor array and a preparation method and application thereof, and belongs to the technical field of organic electronics. The low-voltage and low-leakage organic field effect transistor array cooperatively suppresses leakage current in two directions of vertical and horizontal directions. A high-k-low-k double-layer composite dielectric layer is constructed, wherein the high-k dielectric layer realizes low-voltage gate control, and the low-k dielectric layer serves as a tunneling barrier to suppress vertical gate leakage; meanwhile, a patterned photoetching semiconductor layer is constructed, so that a semiconductor region is located inside a channel, and a horizontal parasitic leakage path is cut off.

The invention discloses application of a C-H sigma bond compound as a light-activated n-type dopant in semiconductors, and belongs to the field of semiconductor functional materials and the field of organic electronics. As a high-stability, photo-activatable and efficient n-type dopant, the C-H sigma bond compound can realize efficient doping of semiconductor materials such as small organic molecule semiconductors, conjugated polymer semiconductors, carbon nanotubes, two-dimensional semiconductors and the like. Meanwhile, the n-type dopant can be compatible with a high-precision ultraviolet exposure technology, and regioselective doping of a semiconductor material is achieved. When the C-H sigma bond compound is used as an n-type dopant to be applied to electronic devices based on semiconductor materials, such as thin film transistors, thermoelectric devices, solar cells and light-emitting diodes, the bulk phase and interface defects of the semiconductor materials can be eliminated, the carrier concentration of the materials can be regulated and controlled, the electrical performance of small-size devices can be remarkably improved, and the performance of the devices can be improved. Therefore, miniaturization and integration of the device are realized.

The invention provides a preparation method of a high-sensitivity organic electrochemical transistor (OECT) cortisol sensor, and belongs to the crossing field of a biosensing technology and organic electronics. A grid electrode of the organic electrochemical transistor cortisol sensor is a carbon electrode modified by Prussian blue (PB) and molecularly imprinted polymer (MIP) in sequence, an evaporated gold electrode is used as a source electrode and a drain electrode, and a PEDOT: PSS film printed by aerosol is used as a channel material. PB is used as a built-in redox probe, polypyrrole and poly-3-APBA are used as MIP substrates, a bare carbon electrode is modified through electrochemical deposition and electrochemical polymerization, preparation of the cortisol electrochemical sensor is achieved, the electrochemical sensor is used as a grid electrode, OECT is prepared, and high-sensitivity cortisol reagent-free detection is achieved. The preparation method of the cortisol sensor is easy to operate, chemical synthesis is not needed, repeatability is high, the detection method is simple, the sensitivity of the prepared sensor can reach 5.6 microamperes / dec, and the cortisol sensor has good reproducibility.

This invention discloses a gateless organic thin-film transistor controlled by a piezoelectric electret and its fabrication method, relating to the field of organic electronics technology. The method includes: obtaining a polypropylene film; treating the polypropylene film by thermal expansion and then subjecting the thermally expanded polypropylene film to corona polarization to obtain a porous polypropylene piezoelectric electret film; depositing a pentaphenyl semiconductor layer on the surface of the porous polypropylene piezoelectric electret film to form an organic semiconductor layer; depositing source and drain electrodes on the organic semiconductor layer using a photomask; depositing an encapsulation layer on at least a portion of the surface of the source electrode, at least a portion of the surface of the drain electrode, at least a portion of the surface of the organic semiconductor layer, and between the source and drain electrodes; and leading out the source and drain electrodes using wires. This invention integrates the advantages of passive piezoelectric tactile sensing with transistor signal amplification through the coupling of piezoelectric effect, field effect, and semiconductor properties, realizing a direct, active human-machine interaction mode.

A conjugated polymer comprising 3, 4-ethylenedioxy thiophene having general formula (I): wherein: R1, R2, R3 and R4, equal to or different from each other, represent a hydrogen atom; or are selected from ester groups having general formula (II): wherein Rs is selected from C1-C20 alkyl groups, preferably C1-C15, more preferably is a C15 alkyl group, provided that at least two of R1, R2, R3 and R4 are selected from ester groups having general formula (II); preferably, R2 and R3, equal to each other, represent a hydrogen atom and R1 and R4, equal to each other, are selected from ester groups having general formula (II); - m is an integer ranging from 0 to 100, preferably ranging from 0 to 20; - n is an integer ranging from 10 to 100, preferably ranging from 15 to 20; - A is a monovalent sulfonate anion, optionally polymeric, preferably selected from trifluoromethanesulfonate, nonafluorobutanesulfonate, p-toluenesulfonate, poly(styrene sulfonate). The above-mentioned conjugated polymer having general formula (I) can be advantageously used in anticorrosive coatings of metal surfaces. Furthermore, the above-mentioned conjugated polymer having general formula (I) can be advantageously used in the field of organic electronics, sensors and actuators, as well as in the construction of battery electrodes. Furthermore, the above-mentioned conjugated polymer having general formula (I) can be advantageously used in 3D printing compositions.

The invention provides a diketopyrrolopyrrole-based polymer and a preparation method thereof, and an organic polymer optical detector and application thereof, and belongs to the technical field of organic functional materials and organic electronics. The diketopyrrolopyrrole-based polymer provided by the invention has a structural general formula as shown in a formula I which is described in the specification. The diketopyrrolopyrrole-based polymer provided by the invention is used as a donor material to prepare an active layer of an organic polymer photodetector with fullerene, a condensed ring or a polymer acceptor material, so that the organic polymer photodetector has relatively high EQE and responsivity.

The invention discloses a photoactive dielectric film, a preparation method and application, and relates to the field of organic electronics and neuromorphic devices, the film is made of a poly (octyl citrate)-cysteine copolymer, and the film has enhanced photoluminescence characteristics after being thermally activated; according to the photoactive dielectric film, L-cysteine is introduced into a polyester matrix, and specific heat treatment (180 DEG C or 200 DEG C annealing) is performed after synthesis, so that the dielectric film is endowed with an adjustable photoluminescence characteristic, and the dielectric layer is converted into an active photoactive functional layer from a passive insulating layer; therefore, the multi-wavelength light response of the neuromorphic device is effectively improved.

The present invention relates to novel cerium(IV) complexes. Furthermore, the present invention relates to electron-doped semiconductor materials and electronic components comprising the cerium(IV) complexes. A further object of the present invention is the use of the cerium(IV) complexes as electron acceptors, in particular as p-dopants and electron transport materials in organic electronic components.