The application discloses a nerve
synapse biomimetic photoelectric slowly-varying
memristor and a preparation method thereof, and belongs to the field of
organic electronics and photoelectric
information technology. The device structure of the slowly-varying
memristor is a cross structure, and comprises a bottom
electrode, a functional layer and a top
electrode from bottom to top on a conductive glass. The functional layer is a poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-
phenylene vinylene] MEH-PPV layer. The bottom
electrode is
indium tin oxide ITO, and the top electrode is Ag. The MEH-PPV layer is a continuous and smooth amorphous thin film. The MEH-PPV layer is prepared by a solution
spin coating method, and has the advantages of good
sustainability, good
solubility, simple preparation, excellent photoelectric performance and the like. The prepared nerve
synapse biomimetic photoelectric slowly-varying
memristor can perform various nerve morphological
simulation and has different responses to light with different wavelengths and different intensities. The application has low cost, good
repeatability and can be used in an artificial nerve morphological computing
system, and provides more possibilities for constructing a
visual perception system.