Method of patterned configuration of solution-state graphene

A graphene and patterning technology, which is applied in the direction of surface coating liquid devices, special surfaces, coatings, etc., can solve the problems of narrow application range and limit the wide application of graphene, and achieve low cost and enhanced application prospects , Expand the effect of application ideas

Inactive Publication Date: 2010-02-17
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods have strict requirements on the substrate and solution system, and the scope of application is narrow, which limits the wide application of solution method to prepare graphene.

Method used

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  • Method of patterned configuration of solution-state graphene
  • Method of patterned configuration of solution-state graphene

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] 1) Substrate processing:

[0034] Clean the silicon dioxide substrate with detergent solution, tap water, secondary water, ethanol, acetone, and ultrasonic for 5-10 minutes in sequence.

[0035] 2) Realization of infiltrating and non-infiltrating areas

[0036] Fluorosilane molecules are self-assembled in a vacuum oven at 0.1 Pascal and 120°C for 3 hours to form a non-wetting area on the clean silicon dioxide surface, cover the metal mask, and then treat the surface with ozone for 4 minutes. Wetting and non-wetting zones are formed (such as figure 1 shown).

[0037] 3) Realization of solution-state graphene arrangement

[0038] On the above substrate, add graphene oxide aqueous solution (concentration 2 mg / ml) dropwise, and then spin the film for 1 minute at a speed of 4000 rpm. Graphites of various sizes can be obtained according to the selection of different metal masks. graphene (such as figure 2 shown). The above-mentioned substrate was transferred to a vacuu...

Embodiment 2

[0041]The arrangement method is basically the same as that in Example 1, the difference is that the time for ozone treatment on the substrate is changed, and various graphene arrangement patterns can be obtained as well, and graphene with different coverages can be obtained. Under different ozone treatment conditions, the contact angle between the graphene solution and the substrate and the coverage of the solution state graphene vary with the treatment time, see image 3 .

[0042] Depend on image 3 It can be seen that the processing time in area 1 is 0-70s, and the contact angle between the graphene solution and the substrate in this area is relatively large and slowly changes. The pattern coverage of graphene at this time is almost close to zero; the processing time in area 2 is 70s- 100s, the contact angle in this area changes suddenly, and the graphic coverage of graphene also changes from a lower coverage value to nearly complete coverage at this time; the processing t...

Embodiment 3

[0044] The arrangement method is basically the same as that in Example 1, the difference is that the concentration of the graphene oxide aqueous solution is changed, and various graphene arrangement patterns can also be obtained, and graphene with different coverages can be obtained. Variation of solution-state graphene coverage with graphene oxide concentration, see Figure 4 .

[0045] Depend on Figure 4 It can be seen that the graphene oxide aqueous solution has lower graphene pattern coverage under lower concentration conditions, and higher graphene pattern coverage can be obtained under high concentration conditions.

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Abstract

The invention discloses a method of patterned configuration of solution-state graphene, which comprises the following steps: (1) processing a substrate and forming a solvent infiltration area and a solvent non-infiltration area of graphene solution on the surface of the substrate; (2) dripping the graphene solution on the substrate obtained in the step 1, and then carrying out spin-coating treatment on the substrate and thermal treatment to obtain the patterned configuration of the graphene. In the method, the solution-method configuration of the graphene is achieved by the simple change of the humidity of the substrate; the method has low cost and large-scale usage, is suitable for a plurality of substrates, broadens the application range of the graphene preparation by a solution method and enhances the application prospects; and meanwhile, the method can be also applied in organic electronics to broaden the application concepts of the graphene preparation by the solution method.

Description

technical field [0001] The invention relates to a method for patterning and arranging solution-state graphene. Background technique [0002] Graphene is a highly crystalline graphite with few layers, which is the basic unit of graphite, fullerene and carbon nanotube. According to the number of layers, it can be divided into single-layer, double-layer and multi-layer (three to ten layers) graphene. Since 2004, graphene, with its unique molecular structure, excellent electrical, chemical and mechanical properties, and huge potential applications in field-effect transistors, sensors and transparent electrodes, has gradually become an important topic in the fields of physics, chemistry, materials and The star material that scientists in the field of microelectronics pay attention to (Science 2004, 306, 666-669; Nature Nanotechnology, 2008, 3, 10-11). The preparation and arrangement of graphene is the key to its further development and application, which has attracted extensive...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B05D5/00B05D7/00C08J7/00C08J7/02
Inventor 刘云圻郭云龙狄重安刘洪涛于贵
Owner INST OF CHEM CHINESE ACAD OF SCI
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