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163results about How to "Different thickness" patented technology

Organic light-emitting diode array substrate, display device and manufacturing method

The invention discloses an organic light-emitting diode array substrate, a display device and a manufacturing method, and belongs to the field of processing of displays. The array substrate comprises a substrate and a plurality of sub-pixel units, wherein the plurality of sub-pixel units are arranged on the substrate; each sub-pixel unit comprises a composite electrode, an organic material functional layer and a first electrode, which are sequentially arranged on the substrate; the composite electrodes included by different types of sub-pixel units are different in thickness; and the composite electrode, the organic material functional layer and the first electrode included by the same sub-pixel unit form a micro-cavity structure. The plurality of sub-pixel units are arranged on the substrate; and the composite electrodes included by different types of sub-pixel units in the plurality of sub-pixel units are different in thickness, so that the micro-cavity structures of different types of sub-pixel units are different in thickness; the manufacturing technology of the micro-cavity structures is simple and convenient to implement in process; the manufacturing cost is reduced; and the manufacturing efficiency and yield are improved.
Owner:BOE TECH GRP CO LTD

Non-volatile memory device having four storage node films and methods of operating and manufacturing the same

A nonvolatile memory device that may operate in a multi-bit mode and a method of operating and manufacturing the nonvolatile memory device are provided. The nonvolatile memory device may include a first source region and a first drain region that are respectively in first fin portions on both sides of a control gate electrode and respectively separated from the control gate electrode, a second source region and a second drain region that are respectively formed in second fin portions on both sides of the control gate electrode and respectively separated from the control gate electrode, first and second storage node layers that are formed with the control gate electrode therebetween and on the side of the first fin opposite to a buried insulating layer between first and second fins, and third and fourth storage node layers that are formed with the control gate electrode therebetween and on the side of the second fin opposite to the buried insulating layer. The nonvolatile memory device may further include a semiconductor substrate including the first and second fins, a control gate electrode on the sides of the first and second fins opposite to the buried insulating layer and extending onto the buried insulating layer and a gate insulating layer between the first and second fins and the control gate electrode.
Owner:SAMSUNG ELECTRONICS CO LTD

Knitting method for warp-knitted spacer fabric with different thicknesses

The invention relates to a knitting method for a warp-knitted spacer fabric with different thicknesses. The warp-knitted spacer fabric is knitted by adopting six guide bars on a double-needle bar warp knitting machine, and the knitting method is characterized by comprising the following steps: (1) penetrating an upper surface layer yarn into guide bars GB1 and GB2, penetrating a lower surface layer yarn into guide bars GB5 and GB6, and penetrating a spacer yarn into guide bars GB3 and GB4, wherein the upper surface layer of the fabric is knitted by the guide bars GB1 and GB2, the lower surface layer of the fabric is knitted by the guide bars GB5 and GB6, and the spacer yarn is knitted by the guide bars GB3 and GB4; (2) when the thickness is changed in the transverse direction, penetrating the yarn by the guide bars GB3 and GB4 complementarily, wherein the yarn penetrating amounts of the guide bars GB3 and GB4 are equal, the guide bar GB3 penetrates the yarn first and then is spaced, and the guide bar GB4 is spaced first and then penetrates the yarn; the warp feeding amount of the guide bar GB3 is set to be smaller than that of the guide bar GB4; (3) when the thickness is changed in the longitudinal direction, setting the set warp feeding amount of part transverse area in the longitudinal row of the guide bar GB3 or the guide bar GB4 to be great, and setting the set warp feeding amount of part transverse area in the longitudinal row of the guide bar GB3 or the guide bar GB4 to be small. According to the knitting method for the warp-knitted spacer fabric with different thicknesses, the transverse cross section and the longitudinal cross section of the fabric can have different thicknesses by controlling the yarn penetrating amount and the warp feeding amount.
Owner:JIANGNAN UNIV
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