The present disclosure relates to a
physical vapor deposition device and method, which comprises a
reaction chamber, a first magnetron
assembly, a support part and a second magnetron
assembly. The top of the
reaction chamber is provided with a target material. The first magnetron
assembly is arranged on the back of the target material. The second magnetron assembly is arranged on the back of the support part. When the first magnetron assembly works, a
magnetic field is generated at the target material, so that the positive ions of the
plasma are attracted by the
cathode negative
electricity, hit the target material, knock out the atoms of the target material, and deposit on the substrate to obtain a film layer. In addition, the
magnetic field lines generated by the second magnetron assembly when working are complementary to the
magnetic field lines generated by the first magnetron assembly. Not only can the
electron collision probability be further increased and the
deposition rate be improved, but also the
electron distribution trajectory can be changed, so that the magnetic
field intensity of each part of the target material is relatively uniform. In this way, the thickness uniformity of each position of the target material is good, thereby the
utilization rate of the target material can be improved, the service life of the target material can be prolonged, and the cost can be reduced.