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37results about How to "Increase surface concentration" patented technology

Solar cell crystal silicon wafer phosphorus diffusion method

The invention discloses a solar cell crystal silicon wafer phosphorus diffusion method. The method comprises the following steps: 1) a to-be-processed crystal silicon wafer is placed in a diffusion furnace, temperature is raised, and nitrogen carrying a phosphorus source, dry oxygen and large nitrogen are introduced, constant-source diffusion is carried out; 2) introduction of the nitrogen carrying the phosphorus source is stopped, temperature is raised, the dry oxygen and the large nitrogen are introduced to perform propelling; 3) the nitrogen carrying the phosphorus source and the dry oxygen are introduced, and low-temperature diffusion is carried out; 4) the introduction of the nitrogen carrying the phosphorus source is stopped, and constant-temperature propelling is carried out; 5) temperature is raised, the nitrogen carrying the phosphorus source and the dry oxygen are introduced, and constant-source diffusion is carried out; 6) the introduction of the nitrogen carrying the phosphorus source is stopped, and oxygen-existing limited-source diffusion is performed; 7) temperature is lowered, the nitrogen carrying the phosphorus source, the dry oxygen and the large nitrogen are introduced, and cooling diffusion is carried out; and 8) temperature is lowered, and the crystal silicon wafer is taken out from a boat. The phosphorus diffusion method is simple and is easy to do, and the phosphorus diffusion method is widely used; and photoelectric conversion efficiency of the silicon wafer can be effectively improved through adoption of the method, electric performance of a solar cell is improved, and the phosphorus diffusion method is suitable for promotion and application.
Owner:HEFEI DAZHUO ELECTRIC POWER CO LTD

Method for preparing cobalt-based alloy layer on surface of TC4 titanium alloy

The invention discloses a method for preparing a cobalt-based alloy layer on a surface of a TC4 titanium alloy and belongs to the field of titanium alloy surface processing. The method comprises that (1), a test sample is prepared; (2) the test sample is arranged on a working platform of a furnace, and a vacuum chamber is sealed; (3) a vacuum pump is opened, the inner portion of the furnace is pumped to the final vacuum, argon is filled, the inner portion of the furnace is pumped to the final vacuum again, and so repeats for 4-6 times; (4), argon is filled to 15-19Pa, cooling water is turned on, a sample power supply is switched on, and a sample is subjected to preliminary bombardment; (5), after the preliminary bombardment, the pressure is adjusted to the working air pressure, the source electrode voltage and the cathode voltage are adjusted to a preset value, and heat preservation is started; (6), after heat preservation is conducted for 1-2.5 hours, a source electrode power supply is turned off, the pressure is adjusted to 18-20Pa, the cathode voltage is reduced to 250-280V, and glow protection cooling is conducted; and (7), the air source and the cathode power supply are turned off, the inner portion of the furnace is pumped to the final vacuum again, and discharge is achieved after cooling. According to the method, a best parameter of a process when cobalt is infiltered into the surface of the titanium alloy can be determined, so that the high-temperature oxidation resistance of the titanium alloy is improved.
Owner:高金菊

Medium carbon steel quenching treatment process capable of reducing quenching cracking

The invention discloses a medium carbon steel quenching treatment process capable of reducing quenching cracking, and relates to the technical field of quenching media. The medium carbon steel quenching treatment process comprises the following steps of (1) pretreatment: adding a medium carbon steel workpiece into a resistance furnace, heating to 400-460 DEG C, keeping the temperature for 30-40 minutes, adding into a polyethylene glycol composite water solution for impregnating, carrying out primary ultrasonic treatment, taking out, and drying to constant weight; and (2) quenching treatment:adding the pretreated medium carbon steel workpiece into the resistance furnace for heating and heat preservation, then rapidly transferring the medium carbon steel workpiece into a first salt bath tank for isothermal treatment for 35-40 min, then rapidly transferring the medium carbon steel workpiece into a second salt bath tank for isothermal treatment for 30-35 min, then transferring the mediumcarbon steel workpiece into a quenching medium for quenching, and carrying out secondary ultrasonic treatment at the same time, finally, cleaning and drying to constant weight to obtain the product.The medium carbon steel workpiece is treated through the first salt bath tank and the second salt bath tank, a boriding layer can be formed on the surface of the medium carbon steel in a permeating mode, and the hardness of the surface of the medium carbon steel workpiece is greatly improved.
Owner:马鞍山市鑫龙特钢有限公司

Preparation method of manganite-loaded ordered mesoporous carbon composite material and application

The invention provides a preparation method of a manganite-loaded ordered mesoporous carbon composite material. The preparation method includes the steps that S1, a micromolecule carbon source, acid and a mesoporous material are mixed in an alcohol solvent and heated for a polymerization reaction, so that a first intermediate product is obtained; S2, the intermediate product and a manganese source are mixed in an alcohol solvent, after the solvent is evaporated, roasting is conducted in protective atmosphere, and finally a second intermediate product is obtained; S3, the mesoporous material in the second intermediate product is removed, so that the manganite-loaded ordered mesoporous carbon composite material is obtained. Compared with the prior art, on one hand, manganite in the composite material is evenly loaded on the surface of mesoporous carbon, in this way, the exposure area of the manganite is increased, then the number of reaction locuses is increased, on the other hand, since ordered mesoporous carbon is used as the substrate of the composite material, mesoporous channels of media are stored, contaminants can be adsorbed, surface concentration can be increased, finally, the purpose of increasing the removal rate of contaminants is realized, and the contaminants can be well gathered and subjected to catalytic degradation.
Owner:UNIV OF SCI & TECH OF CHINA

Switch LDMOS device and manufacturing method thereof

The invention discloses a switching LDMOS device. According to the invention, an LDD region of the switching LDMOS device and a first bulk-doped region of a second conduction type are arranged in a first trap in a semiconductor substrate; a first heavily-doped region serving as a source region is arranged in the LDD region, and a second heavily-doped region serving as a drain region is arranged inthe first bulk-doped region; in a gate structure, a channel of the switching LDMOS device is formed on the surface layer of the part, located between the LDD region and the bulk-doped region, of thesemiconductor substrate, and when a voltage applied to a gate exceeds the threshold voltage of the LDMOS device, the channel is inverted, so the source region and the drain region are conducted; and one side, far away from the gate structure, of each of the LDD region and the bulk-doped region is provided with field oxygen or STI, and one side of the field oxygen or STI is connected with the firstheavily-doped region in the LDD or the second heavily-doped region in the first bulk-doped region. With the bulk-doped region having higher ion implantation energy and ion implantation dosage, the purposes of improving the breakdown voltage (BV) of the device and reducing the size of the device are achieved.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP

Environment-friendly boron diffusion source formula

The invention discloses a formula of an environment-friendly boron diffusion source. The formula comprises the following raw materials in parts by weight: glycol ether; diboron trioxide; the preparation method comprises the following steps: preparing a diboron trioxide / glycol ether solution from diboron trioxide and glycol ether, preparing an aluminum nitrate / glycol ether solution from aluminum nitrate and glycol ether, and preparing a boron diffusion liquid source from the diboron trioxide / glycol ether solution, the aluminum nitrate / glycol ether solution and alumina powder. According to the environment-friendly boron diffusion source formula, a silicon wafer is sequentially subjected to surface corrosion, surface oxidation, drying and polishing procedures, the silicon wafer is put into an etching solution of a hydrofluoric acid / nitric acid / water mixed solution system to react and then put into an alkaline solution to react at normal temperature, so that the surface concentration of the silicon wafer after diffusion is relatively high; the problem that the surface concentration is low due to the boron absorption effect of silicon dioxide after boron diffusion is solved, the uniformity of a silicon wafer after boron diffusion is good, and the problem that the boron diffusion source at a single position is low is solved.
Owner:济南晶硕电子有限公司

Box-method boron microcrystalline glass source concentrated boron diffusion method

The invention provides a box-method boron microcrystalline glass source concentrated boron diffusion method which comprises the steps of S1) carrying out high-temperature pretreatment on boron microcrystalline glass to obtain pretreated boron microcrystalline glass; S2) stacking the pretreated boron microcrystalline glass and a silicon wafer to be subjected to diffusion treatment, and heating for diffusion treatment to obtain a treated silicon wafer, wherein the front surface of the silicon wafer to be subjected to diffusion treatment is in contact with the pretreated boron microcrystalline glass; and S3) removing borosilicate glass on the surface of the treated silicon wafer to obtain the silicon wafer subjected to boron diffusion treatment. Compared with the prior art, the PWB source is in direct contact with the Si wafer, so that a shallow junction can be formed while high surface concentration is realized; secondly, the upper surface and the lower surface of the PWB source can be in contact with the to-be-doped surfaces of the two layers of Si wafers respectively, so that the diffusion efficiency is improved; moreover, the method provided by the invention only uses one-step diffusion, does not need to take out the Si wafer midway for treatment, is simple in process and easy to operate, and avoids unnecessary pollution.
Owner:CHENGDU YAGUANG ELECTRONICS
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