Selective doping method for N-type solar cell

A solar cell and selective technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of high doping concentration in lightly doped regions, no advantages and unevenness in heavily doped regions, and achieve low doping concentration and convenience. Process upgrade, shallow depth effect

Active Publication Date: 2020-10-02
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the selective doping scheme of this patent has been found to have the following problems through experiments: 1) The doping concentration in the lightly doped area is high and uneven; The difference in the diffusion dept

Method used

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Examples

Experimental program
Comparison scheme
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Example Embodiment

[0038] Example 1

[0039] A selective doping method for N-type solar cells uses boron slurry as the diffusion source in the heavily doped region, and uses a gas-phase boron source as the diffusion source in the lightly doped region; the method includes the following steps:

[0040] 1) N-type silicon wafer for texturing;

[0041] 2) Use a tube furnace for oxidation, set the oxidation temperature to 800°C, the oxidation time to 10min, and the oxygen flow rate to 1000sccm;

[0042] 3) Print boron paste on the texturing surface, set the drying temperature to 200℃ and the drying time to 1min;

[0043] 4) Use an automated robotic arm to insert the film, with the printing side facing out, back-to-back; the diffusion process is as follows: ①oxidation, temperature 850℃, oxygen flow setting 1000sccm, hold for 5min; ②The furnace tube is heated to 980℃ first, and the atmosphere is large Nitrogen 18000sccm, hold for 30min; ③Cool down to 860℃, atmosphere of large nitrogen 18000sccm, small oxygen 60s...

Example Embodiment

[0045] Example 2

[0046] A selective doping method for N-type solar cells uses boron slurry as the diffusion source in the heavily doped region, and uses a gas-phase boron source as the diffusion source in the lightly doped region; the method includes the following steps:

[0047] 1) N-type silicon wafer for texturing;

[0048] 2) Use a tube furnace for oxidation, set the oxidation temperature to 900℃, oxidation time to 10min, and oxygen flow rate to 2000sccm;

[0049] 3) Print boron paste on the texturing surface, set the drying temperature to 200℃ and the drying time to 1min;

[0050] 4) Use an automated mechanical arm to insert the film, with the printing side facing out and back to back; the diffusion process is as follows: ①oxidation, the temperature is 900℃, the oxygen flow is set to 2000sccm, and it is maintained for 5min; Nitrogen 18000sccm, hold for 40min; ③Cool down to 900℃, atmosphere of large nitrogen 18000sccm, small oxygen 60sccm, small nitrogen 200sccm, hold for 15min; ...

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PUM

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Abstract

The invention discloses a selective doping method for an N-type solar cell. The method comprises the steps of employing boron slurry as a heavily doped region diffusion source, and employing a gas-phase boron source as a lightly doped region diffusion source, before boron slurry is printed, covering the surface of a silicon wafer with a first oxide layer firstly, then covering the printed boron slurry with a second oxide layer, and through blocking of the two oxide layers, achieving the purposes that boron slurry outward expansion is reduced and the doping amount of a lightly doped region canalso be reduced, and during high-temperature propulsion, adopting a differentiated propulsion mode, firstly propelling a heavily doped region taking boron slurry as a boron source, then introducing agas-phase boron source, and jointly propelling the heavily doped region and the lightly doped region, so that heavily and lightly doped differentiated obvious distribution is realized.

Description

technical field [0001] The invention relates to the field of photovoltaics, in particular to a selective doping method for N-type solar cells. Background technique [0002] The front surface of a traditional solar cell is divided into two areas, one is the area in contact with the electrode paste, and the other is the illuminated area, that is, the area without electrode paste coverage. In the preparation of the emitter of the existing solar cell, a uniformly doped emitter is generally used, that is, the metal paste contact area and the illumination area are uniformly doped. This doping method is simple and fast, but it has disadvantages. In the metal paste contact area, we need high doping concentration to reduce the metal-semiconductor contact resistance and contact recombination; in the illuminated area, we need low doping concentration to reduce the surface R Intermittent recombination, improve carrier collection rate, improve short-wave response, and improve passivatio...

Claims

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Application Information

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IPC IPC(8): H01L31/0288H01L31/0236H01L31/06H01L31/18H01L21/223H01L21/228
CPCH01L21/223H01L21/228H01L31/02363H01L31/0288H01L31/06H01L31/1804Y02E10/547Y02P70/50
Inventor 奚琦鹏潘琦史卓群杨立功
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
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