Selective doping method for n-type solar cells

A solar cell and selective technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of high doping concentration in lightly doped regions, little difference in diffusion depth, and high battery series resistance, achieving low doping concentration, Small impact, effect of improving efficiency

Active Publication Date: 2021-09-03
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the selective doping scheme of this patent has been found to have the following problems through experiments: 1) The doping concentration in the lightly doped area is high and uneven; The difference in the diffusion depth of the impurity region is not large, and the heavily doped region has no advantage in the doping depth; the battery series resistance of this scheme will be high, the fill factor is low, and the actual efficiency gain is limited

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] A selective doping method for an N-type solar cell, using boron paste as a diffusion source in a heavily doped region, and using a gas phase boron source as a diffusion source in a lightly doped region; comprising the following steps:

[0040] 1) N-type silicon wafer for texturing;

[0041] 2) Use a tube furnace for oxidation, set the oxidation temperature to 800°C, the oxidation time to 10 minutes, and the oxygen flow rate to 1000 sccm;

[0042] 3) Print boron paste on the textured surface, set the drying temperature to 200°C, and the drying time to 1 min;

[0043] 4) Use an automated robotic arm to insert the sheet, with the printed side facing outwards, back to back; the diffusion process is as follows: ①Oxidation, temperature 850°C, oxygen flow rate set 1000sccm, keep for 5min; ②The furnace tube is first heated to 980°C, and the atmosphere is large Nitrogen 18000sccm, keep 30min; ③ cool down to 860℃, the atmosphere is large nitrogen 18000sccm, small oxygen 60sccm, ...

Embodiment 2

[0046] A selective doping method for an N-type solar cell, using boron paste as a diffusion source in a heavily doped region, and using a gas phase boron source as a diffusion source in a lightly doped region; comprising the following steps:

[0047] 1) N-type silicon wafer for texturing;

[0048] 2) Use a tube furnace for oxidation, set the oxidation temperature to 900°C, the oxidation time to 10min, and the oxygen flow rate to 2000sccm;

[0049] 3) Print boron paste on the textured surface, set the drying temperature to 200°C, and the drying time to 1 min;

[0050] 4) Use an automated robotic arm to insert the sheet, with the printed side facing outwards, back to back; the diffusion process is as follows: ①Oxidation, temperature 900°C, oxygen flow rate 2000sccm, keep for 5min; ②The temperature of the furnace tube is first raised to 980°C, and the atmosphere is large Nitrogen 18000sccm, keep for 40min; ③ cool down to 900℃, the atmosphere is large nitrogen 18000sccm, small ox...

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PUM

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Abstract

The invention discloses a selective doping method for N-type solar cells. Boron paste is used as the diffusion source in the heavily doped region, and a gas phase boron source is used as the diffusion source in the lightly doped region; Oxide layer, and then cover the second oxide layer on the printed boron paste, which is blocked by two layers of oxide layer, so as to reduce the expansion of boron paste and reduce the doping amount of the lightly doped area; and when advancing at high temperature, the difference In the way of chemical advancement, the heavily doped area with boron slurry as the boron source is advanced first, and then the gas-phase boron source is ventilated, and the heavily doped area and the lightly doped area are jointly promoted to achieve a distinct distribution of heavy and light doping.

Description

technical field [0001] The invention relates to the field of photovoltaics, in particular to a selective doping method for N-type solar cells. Background technique [0002] The front surface of a traditional solar cell is divided into two areas, one is the area in contact with the electrode paste, and the other is the illuminated area, that is, the area without electrode paste coverage. In the preparation of the emitter of the existing solar cell, a uniformly doped emitter is generally used, that is, the metal paste contact area and the illumination area are uniformly doped. This doping method is simple and fast, but it has disadvantages. In the metal paste contact area, we need high doping concentration to reduce the metal-semiconductor contact resistance and contact recombination; in the illuminated area, we need low doping concentration to reduce the surface R Intermittent recombination, improve carrier collection rate, improve short-wave response, and improve passivatio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0288H01L31/0236H01L31/06H01L31/18H01L21/223H01L21/228
CPCH01L21/223H01L21/228H01L31/02363H01L31/0288H01L31/06H01L31/1804Y02E10/547Y02P70/50
Inventor 奚琦鹏潘琦史卓群杨立功
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
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