Solar cell crystal silicon wafer phosphorus diffusion method
A technology for solar cells and crystalline silicon wafers, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of uneven atmosphere environment and temperature field along the radial direction, affecting the controllability of process parameters, solar cell electrical performance, portable Insufficient mixing of the source gas ratio, diffusion atmosphere, etc., to achieve the effects of reducing the surface minority carrier recombination rate, improving photoelectric conversion efficiency, and improving diffusion uniformity
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[0028] Example 1
[0029] A method for diffusing phosphorus on crystalline silicon wafers of solar cells is carried out according to the following steps:
[0030] (1) Place the monocrystalline silicon wafer to be processed in a diffusion furnace, first heat it up to 380°C at a heating rate of 10°C / min, hold it for 15 minutes, then heat it up to 740°C at a heating rate of 15°C / min, and pass Into the phosphorus source nitrogen, dry oxygen and large nitrogen for constant source diffusion, wherein the flow rate of the phosphorus source nitrogen is 0.8L / min, the flow rate of dry oxygen is 0.8L / min, and the flow rate of large nitrogen is 10L / min , The diffusion time is 12min, and the pressure in the furnace is controlled to 80MPa;
[0031] (2) Stop the introduction of phosphorus-carrying nitrogen, increase the temperature to 880°C at a heating rate of 4°C / min, and simultaneously pass in dry oxygen and large nitrogen to advance. The flow of dry oxygen is 1.0L / min, and the flow of large nit...
Example Embodiment
[0039] Example 2
[0040] A method for diffusing phosphorus on crystalline silicon wafers of solar cells is carried out according to the following steps:
[0041] (1) Place the polycrystalline silicon wafer to be processed in a diffusion furnace, first heat it up to 400°C at a heating rate of 15°C / min, hold it for 20 minutes, then heat it up to 760°C at a heating rate of 20°C / min, and pass it into the carrier Phosphorus source nitrogen, dry oxygen and large nitrogen undergo constant source diffusion, wherein the flow rate of the phosphorus source nitrogen is 1.2L / min, the flow rate of dry oxygen is 1.2L / min, and the flow rate of large nitrogen is 12L / min. The time is 14min, and the pressure in the furnace is controlled to 100MPa;
[0042] (2) Stop introducing phosphorus-carrying nitrogen, heat up to 900°C at a heating rate of 6°C / min, and simultaneously pass in dry oxygen and large nitrogen to advance. The flow of dry oxygen is 1.5L / min, and the flow of large nitrogen is 15L / min, d...
Example Embodiment
[0050] Example 3
[0051] A method for diffusing phosphorous on crystalline silicon wafers of solar cells, according to the following steps:
[0052] (1) Place the monocrystalline silicon wafer to be processed in a diffusion furnace, first heat up to 420°C at a heating rate of 20°C / min, hold it for 25 minutes, and then heat up to 780°C at a heating rate of 25°C / min, and pass Into the phosphorus source nitrogen, dry oxygen and large nitrogen for constant source diffusion, wherein the flow rate of the phosphorus source nitrogen is 1.6L / min, the flow rate of dry oxygen is 1.6L / min, and the flow rate of large nitrogen is 14L / min , The diffusion time is 16min, and the pressure in the furnace is controlled to 120MPa;
[0053] (2) Stop the introduction of phosphorus-carrying nitrogen, and increase the temperature to 920°C at a heating rate of 8°C / min. At the same time, add dry oxygen and large nitrogen to advance. The flow of dry oxygen is 2.0L / min, and the flow of large nitrogen is 15L / m...
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